1、REVISIONSLTR DESCRIPTION DATE (YR -MO -DA) APPROVEDA Changes IAW NOR 5962-R039-99 LTG 99-03-10 Monica L. PoelkingB Make correction to case outline descriptive designator. Editorial changesthroughout - JAK99-09-29 Monica L. PoelkingREVSHEETREV B B B B B B B B BSHEET 15 16 17 18 19 20 21 22 23REV STAT
2、US REV B B B B B B B B B B B B B BOF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14PMIC N/A PREPARED BY Charles F. Saffle, Jr.DEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYCharles F. Saffle, Jr.COLUMBUS, OHIO 43216THIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMonic
3、a L. Poelking MICROCIRCUIT, DIGITAL, RADIATION HARDENED,ADVANCED CMOS, INVERTING OCTAL BUFFER/LINEDRIVER WITH THREE-STATE OUTPUTS, AND AGENCIES OF THEDEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 98-01-25MONOLITHIC SILICONAMSC N/A REVISION LEVELBSIZEACAGE CODE67268 5962-98540SHEET 1 OF 23DSCC FORM 223
4、3APR 97 5962 -E487-99DISTRIBUTION STATEMENT A . Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98540DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000
5、 REVISION LEVEL B SHEET 2DSCC FORM 2234APR 971. SCOPE1.1 Scope . This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the
6、 Part orIdentifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.1.2 PIN . The PIN is as shown in the following example:5962 F 9854 0 01 V X CFederal RHA Device Device Case Lead stock class designator type class outline finishdesignator
7、 (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator . Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and aremarked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-
8、38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash ( -) indicates a non -RHA device.1.2.2 Device type(s) . The device type(s) identify the circuit function as follows:Device type Generic number Circuit function01 ACS240 Radiation hardened, SOS, advanced
9、CMOS,inverting octal buffer/line driver withthree-st ate outputs1.2.3 Device class designator . The device class designator is a single letter identifying the product assurance level as follows:Device class Device requirements documentationM Vendor self -certification to the requirements for MIL-STD
10、 -883 compliant, non -JANclass level B microcircuits in accordance with MIL-PRF-38535, appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s) . The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package
11、 styleR CDIP2-T20 20 Dual-in-lineX CDFP4-F20 20 Flat pack1.2.5 Lead finish . The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-ST
12、ANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98540DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3DSCC FORM 2234APR 971.3 Absolute maximum ratings . 1 / 2 / 3 /Supply voltage range (V CC ) . -0.5 V dc to +7.0 V dcDC input voltage range (V IN ) . -0.5 V dc to V CC + 0.5 V dcDC
13、 output voltage range (V OUT ) -0.5 V dc to V CC + 0.5 V dcDC input current, any one input (I I N ) . 10 mADC output current, any one output (I OUT ) . 50 mAStorage temperature range (T STG ) -65 C to +150 CLead temperature (soldering, 10 seconds) +265 CThermal resistance, junction -to -case ( JC ):
14、Case outline R . 24 C/WCase outline X . 28 C/WThermal resistance, junction -to -ambient ( JA ):Case outline R . 72 C/WCase outline X . 107 C/WJunction temperature (T J ) . +175 CMaximum package power dissipation at T A = +125 C (P D ): 4 /Case outline R . 0.69 WCase outline X . 0.47 W1.4 Recommended
15、 operating conditions . 2 / 3 /Supply voltage range (V CC ) . +4.5 V dc to +5.5 V dcInput voltage range (V IN ) . +0.0 V dc to V CCOutput voltage range (V OUT ) . +0.0 V dc to V CCMaximum low level input voltage (V IL ) . 30% of V CCMinimum high level input voltage (V IH ) 70% of V CCCase operating
16、temperature range (T C ) . -55 C to +125 CMaximum input rise and fall time at V CC = 4.5 V (t r , t f ) 10 ns/VRadiation features:Total dose . 3 x 10 5 Rads (Si)Single event phenomenon (SEP) effectivelinear energy threshold (LET) no upsets (see 4.4.4.4) . 100 MeV/(cm 2 /mg) 5 /Dose rate upset (20 ns
17、 pulse) . 1 x 10 11 Rads (Si)/s 5 /Latch-up None 5 /Dose rate survivability 1 x 10 12 Rads (Si)/s 5 /1 / Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2 / Unless otherwise no
18、ted, all voltages a re referenced to GND.3 / The limits for the parameters specified herein shall apply over the full specified V CC range and case temperature range of-55 C to +125 C unless otherwise noted.4 / If device power exceeds package dissipation capability, prov ide heat sinking or derate l
19、inearly (the derating is based on JA ) atthe following rate:Case outline R 13.9 mW/ CCase outline X . 9.3 mW/ C5 / Guaranteed by design or process but not tested.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-9
20、8540DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4DSCC FORM 2234APR 972. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks . The following specification, standards, and handbooks form a part ofthis drawing to the extent specified herein. Unl
21、ess otherwise specified, the issues of these documents are those listed in the issueof the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, Gene
22、ral Specification for.STANDARDSDEPARTMENT OF D EFENSEMIL -STD -883 - Test Method Standard Microcircuits.MIL-STD-973 - Configuration Management.MIL-STD-1835 - Interface Standard For Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircu it Drawings (SMDs).
23、MIL -HDBK -780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence . In the event of a conf
24、lict between the text of this drawing and the references cited herein, the text ofthis drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specificexemption has been obtained.3. REQUIREMENTS3.1 Item requirements . The individual item requi
25、rements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirement
26、s for deviceclass M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein.3.1.1 Microcircuit die . For the requirements for microcircuit die, see appendix A to this document.3.2 Design, construction, and physical dimensions . The design, cons
27、truction, and physical dimensions shall be as specified inMIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines . The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections . The terminal connecti
28、ons shall be as specified on figure 1.3.2.3 Truth table . The truth table shall be as specified on figure 2.3.2.4 Logic diagram . A representative logic diagram shall be as specified on figure 3.3.2.5 Switching waveforms and test circuit . The switching waveforms and test circuit shall be as specifi
29、ed on figure 4.3.2.6 Irradiation test connections . The irradiation test connections shall be as specified in table III.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98540DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS
30、, OHIO 43216-5000 REVISION LEVEL B SHEET 5DSCC FORM 2234APR 973.3 Electrical performance characteristics and postirradiation parameter limits . Unless otherwise specified herein, the electricalperformance characteristics and postirradiation parameter limits are as specified in table I and shall appl
31、y over the full case operatingtemperature range.3.4 Electrical test requirements . The electrical test requirements shall be the subgroups specified in table IIA. The electrical testsfor each subgroup are defined in table I.3.5 Marking . The part shall be marked with the PIN listed in 1.2 herein. In
32、 addition, the manufacturers PIN may also be markedas listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, themanufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designat
33、orshall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class Mshall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark . The certification mark for device classes Q and V shall be a “QML“ or “Q“ as re
34、quired inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance . For device classes Q and V, a certificate of compliance shall be required from a QML -38535 listedmanufacturer in order to supply to the requirements
35、 of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC -VA prior to listing as an approved sourc
36、e of supply for this drawingshall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein orfor device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance . A certificate of conformance as requ
37、ired for device classes Q and V inMIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered tothis drawing.3.8 Notification of change for device class M . For device class M, notification to DSCC -VA of change of product (see 6.2 here
38、in)involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.3.9 Verification and review for device class M . For device class M, DSCC, DSCCs agent, and the acquiring activity retain theoption to review the manufacturers facility and applicable required document
39、ation. Offshore documentation shall be made availableonshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M . Device class M devices covered by this drawing shall be in microcircuitgroup number 37 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo re
40、production or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98540DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics .Test Symbol Test conditions 1 /-55 C T C +1
41、25 Cunless otherwise specifiedDevicetypeV CC Group AsubgroupsLimits 2 / UnitMin MaxHigh level outputvoltageV OH For all inputs affectingoutput under testV IN = 4.5 V or 0.0 VFor all other inputsAll 4.5 V 1, 2, 3 4.40 VV IN = V CC or GNDI OH = -50 A M, D, L, R, F 3 / All 1 4.40For all inputs affectin
42、goutput under testV IN = 5.5 V or 0.0 VFor all other inputsAll 5.5 V 1, 2, 3 5.40V IN = V CC or GNDI OH = -50 A M, D, L, R, F 3 / All 1 5.40Low level outputvoltageV OL For all inputs affectingoutput under testV IN = 4.5 V or 0.0 VFor all other inputsAll 4.5 V 1, 2, 3 0.1 VV IN = V CC or GNDI OL = 50
43、 A M, D, L, R, F 3 / All 1 0.1For all inputs affectingoutput under testV IN = 5.5 V or 0.0 VFor all other inputsAll 5.5 V 1, 2, 3 0.1V IN = V CC or GNDI OL = 50 A M, D, L, R, F 3 / All 1 0.1Input current highI IH For input under test, V IN = 5.5 VFor all other inputsV IN = V CC or GNDAll 5.5 V 1 +0.
44、5 A2, 3 +1.0M, D, L, R, F3 /All 1 +1.0Input current lowI IL For input under test, V IN = GNDFor all other inputsV IN = V CC or GNDAll 5.5 V 1 -0.5 A2, 3 -1.0M, D, L, R, F3 /All 1 -1.0See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr
45、om IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-98540DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 7DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - Continued.Test Symbol Test conditions 1 /-55 C T C +125 Cunless otherwise specifiedDevicetypeV
46、CC Group AsubgroupsLimits 2 / UnitMin MaxOutput current high(Source)I OH4 /For all inputs affecting outputunder test, V IN = 4.5 V or 0.0 VAll 4.5 V 1 -16.0 mAFor all other inputs 2, 3 -12.0V IN = V CC or GNDV OUT = 4.1 V M, D, L, R, F 3 / All 1 -12.0Output current low(Sink)I OL4 /For all inputs aff
47、ecting outputunder test, V IN = 4.5 V or 0.0 VAll 4.5 V 1 16.0 mAFor all other inputs 2, 3 12.0V IN = V CC or GNDV OUT = 0.4 V M, D, L, R, F 3 / All 1 12.0Three -state outputleakage currenthighI OZHmOE = 5.5 VFor all other inputsAll 5.5 V 1 +1.0 AV IN = 0.0 V or 5.5 VV OUT = 5.5 V 2, 3 +35.0M, D, L,
48、 R, F3 /All 1 +35.0Three -state outputleakage currentlowI OZLmOE = 5.5 VFor all other inputsAll 5.5 V 1 -1.0 AV IN = 0.0 V or 5.5 VV OUT = 0.0 V 2, 3 -35.0M, D, L, R, F3 /All 1 -35.0Quiescent supplycurrentI CC V IN = V CC or GND All 5.5 V 1 20.0 A2, 3 400.0M, D, L, R, F3 /All 1 400.0Input capacitance C IN V IH = 5.0 V, V IL = 0.0 Vf = 1 MHz, see 4.4.1cAll 5.0 V 4 18.0 pFOutput capacitance C OUT All 5.0 V 4 10.0 pFPower dissipationcapacitanceC PD5 /All 5.0 V 4 75.0 pF5, 6 75.0See footnotes at end of table.Provided by IHSNot fo
