1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device class T device and requirements. - ro 98-12-04 R. MONNIN B Make changes to 1.5. - ro 99-01-05 R. MONNIN C Add level P to table I. Make changes to 1.5 and glassivation as specified under APPENDIX A. - ro 99-04-13 R. MONNIN D Drawing upd
2、ated to reflect current requirements. gt 03-03-11 R. MONNIN E Add device type 02. Make changes to 1.2.2, table I, figure 1, figure 4, 4.4, and A4.3.1. - ro 04-01-06 R. MONNIN F Add enhanced low dose rate effects (ELDRS) paragraph to 1.5 and table I. - rrp 05-10-14 R. MONNIN G Add 30 V test condition
3、s to Table I. Add a date code sentence to footnote 1/ as specified under Table I. Add CMRR and IOZtests under Table I. Make change to Table IIB. Delete Accelerated aging test. - ro 07-06-25 R. HEBER H Make correction by deleting the minimum limit from the IIOtest as specified under Table I. - ro 09-
4、10-15 C. SAFFLE J Add device type 03. Delete dose rate upset from paragraph 1.5. Add ASTM F1192 information under section 2. Delete radiation exposure circuit. - ro 12-10-01 C. SAFFLE REV SHEET REV J J J J J J J SHEET 15 16 17 18 19 20 21 REV STATUS REV J J J J J J J J J J J J J J OF SHEETS SHEET 1
5、2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA A
6、PPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, RADIATION HARDENED, QUAD VOLTAGE COMPARATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 98-06-26 AMSC N/A REVISION LEVEL J SIZE A CAGE CODE 67268 5962-98613 SHEET 1 OF 21 DSCC FORM 2233 APR 97 5962-E453-12 Provided by IHSNot for ResaleNo reproduction or
7、networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98613 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliabil
8、ity (device classes Q), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assu
9、rance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962
10、- 98613 01 V C C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specifi
11、ed RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-139RH Radiation hardened quad voltage comparator 02 HS-139BRH
12、Radiation hardened quad voltage comparator 03 HS-139EH Radiation hardened quad voltage comparator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q, V Certification and qu
13、alification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designat
14、or Terminals Package style C CDIP2-T14 14 Dual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT D
15、RAWING SIZE A 5962-98613 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (+V) 36 V dc Input voltage range (VIN) -0.3 V dc to 36 V dc Input current (IIN) (VIN15 k, 1,2,3 All 60 dB VCM= 0 V to 27.5 V M
16、,D,P,L,R,F 1 60 Output leakage current IOZ+V = +30 V, 1,2,3 All -0.5 0.5 A VOUT= 30 V dc M,D,P,L,R,F 1 -0.5 0.5 Output sink current IOSK-VIN 1 V, +VIN= 0 V, VOUT15 k, +VS= 15 V 1,2,3 01,03 50 V/mV 02 25 M,D,P,L,R,F 1 01,03 50 02 25 Response time 4/ tPHLVIN= VIO+ 5 mV, 4 01,03 5 s VREF= 1.4 V, VRL= 5
17、 V, 02 7 RL= 5.1 k, see figure 3 5,6 01,03 7 02 12 M,D,P,L,R,F 4 01,03 7 02 12 tPLHVIN= VIO+ 5 mV, 4 01,03 5 s VREF= 1.4 V, VRL= 5 V, 02 7 RL= 5.1 k, see figure 3 5,6 01,03 7 02 12 M,D,P,L,R,F 4 01,03 7 02 12 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking p
18、ermitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98613 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 8 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics - Continued. 1/ RHA device types 01 and 02 (device classes Q and V) su
19、pplied to this drawing will meet all levels L, R and F of irradiation, and device type 01 (device class T) will meet all levels L and R of irradiation. However, device types 01 and 02 (device classes Q and V) are only tested at the “F” level, and device type 01 (device class T) is only tested at the
20、 “R” level in accordance with MIL-STD-883 method 1019 condition A (see 1.5 herein). Device types 01 and 02 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. RHA device type 03 supplied to this drawing will meet all levels L, R, and F of irradiation
21、 for condition A and “L” level for condition D. However, device type 03 is only tested at the “F” level in accordance with MIL-STD-883, method 1019, condition A and tested at the “L” level in accordance with MIL-STD-883, method 1019, condition D (see 1.5 herein). Pre and post irradiation values are
22、identical unless otherwise specified in table IA. When performing post irradiation electrical measurements for any RHA level, TA= +25C. All material beginning with a lot date code of “0710” and after will have been screened to the revised table IA electrical limits for the implementation of the 30 V
23、 test conditions. 2/ The comparator will provide a proper output state even if the positive swing of the inputs exceeds the power supply voltage level, if the other input remains within the common mode voltage range. The low input voltage state must not be less than -0.3 V (or 0.3 V below the magnit
24、ude of the negative power supply, if used). 3/ The upper end of the common mode voltage range is (+V) - 2.5 V, but either or both inputs can go to +30 V without damage. 4/ If not tested, shall be guaranteed to the limits specified in table IA herein. TABLE IB. SEP test limits. 1/ 2/ Device type Supp
25、ly voltage V+ = 5.0 V 3/ No SEU at effective LET MeV/(mg/cm2) All LET 20 1/ For single event phenomena (SEP) test conditions, see 4.4.4.3 herein. 2/ Technology characterization and model verification supplemented by in-line data may be used in lieu of end-of-line testing. Test plan must be approved
26、by technical review board and qualifying activity. 3/ Tested for upsets at worse case temperature, TA= +25C 10C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98613 DLA LAND AND MARITIME COLUMBUS, OHIO 4321
27、8-3990 REVISION LEVEL J SHEET 9 DSCC FORM 2234 APR 97 Device types 01, 02, and 03 Case outlines C and X Terminal number Terminal symbol 1 OUTPUT 2 2 OUTPUT 1 3 +V 4 -INPUT 1 5 +INPUT 1 6 -INPUT 2 7 +INPUT 2 8 -INPUT 3 9 +INPUT 3 10 -INPUT 4 11 +INPUT 4 12 GND 13 OUTPUT 4 14 OUTPUT 3 FIGURE 1. Termin
28、al connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98613 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 10 DSCC FORM 2234 APR 97 FIGURE 2. Block diagram. Provided by IHSNo
29、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98613 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 11 DSCC FORM 2234 APR 97 FIGURE 3. Timing waveforms. Provided by IHSNot for ResaleNo reproduction or
30、 networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98613 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 12 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q, and V, sampling and inspection procedu
31、res shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan, including screening (4.2), qualification (4.3), and conformance inspection (4.4). The modification in the QM plan shall not affect the form, fit, or function as described herein. Fo
32、r device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 and the device manufacturers QM plan including screening, qualification, and conformance inspection. The performance envelope and reliability information shall be as specified in the manufacturers QM plan.
33、 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class T, screening shall be in accordance with the device manufacturers Quality Management (
34、QM) plan, and shall be conducted on all devices prior to qualification and technology conformance inspection. 4.2.1 Additional criteria for device classes Q, T and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manuf
35、acturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon req
36、uest. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. For device classes Q, T and V interim and final electrical test parameters shall be as specified in table IIA herein. c. A
37、dditional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, Appendix B. 4.3 Qualification inspection for device classes Q, T and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Qualificatio
38、n inspection for device class T shall be in accordance with the device manufacturers Quality Management (QM) plan. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technolo
39、gy conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and
40、 E inspections (see 4.4.1 through 4.4.4). Technology conformance inspection for class T shall be in accordance with the device manufacturers Quality Management (QM) plan. 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. Subgroups 7, 8, 9, 10, and 11 in table I, method
41、 5005 of MIL-STD-883 shall be omitted. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device classes Q, T and V. The steady-state life test duration, test condition and test temperature, or a
42、pproved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturers TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or
43、 preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as spec
44、ified in table IIA herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98613 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL J SHEET 13 DSCC FORM 2234 APR 97 TABLE IIA. Electrical test requ
45、irements. Test requirements Subgroups (in accordance with MIL-PRF-38535, table III) Device class Q Device class V Device class T Interim electrical parameters (see 4.2) 1,4 1,4 As specified in QM plan Final electrical parameters (see 4.2) 1,2,3,4,5,6 1/ 1,2,3, 1/ 2/ 4,5,6 As specified in QM plan Gro
46、up A test requirements (see 4.4) 1,2,3,4,5,6 1,2,3,4,5,6 As specified in QM plan Group C end-point electrical parameters (see 4.4) 1,2,3,4,5,6 1,2,3,4,5,6 2/ As specified in QM plan Group D end-point electrical parameters (see 4.4) 1,4 1,4 As specified in QM plan Group E end-point electrical paramet
47、ers (see 4.4) 1,4 1,4 As specified in QM plan 1/ PDA applies to subgroup 1 for class Q. For class V, PDA applies to subgroup 1 and deltas. 2/ Delta limits as specified in table IIB shall be required and the delta values shall be computed with reference to the zero hour electrical parameters (see tab
48、le IA). TABLE IIB. Burn-in and life test delta parameters. (TA= +25C). 1/ Parameters Symbol Min Max Units Input offset voltage (+V = 5 V) VIO-1 +1 mV Input bias current (+V = 5 V) IIB-15 +15 nA Input offset current (+V = 5 V) IIO-10 +10 nA 1/ If device is tested at or below delta limits, no deltas are required. Deltas are performed at room temperature. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98613 DLA LAND AND
