1、SMD-59bZ-98bZY REV A NOTICE OF REVISION (NOR) THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. W b 0338753 355 1. DATE (YYMMDD) 99-04-1 3 4. ORIGINATOR a. TYPED NAME (first, Middle Initial, Last) Public reporting burden forthis collection is estimated to avera e 2 hours er
2、response, includin the time for,reviewing InStNCbOnS, searchina existina data sources, aathenna and mainiainina the gata needed. and comaetina and reviewina the b. ADDRESS (Street, City, State, Zip Code) 5. CAGE CODE Defense Supply Center, Columbus 67268 3990 East Broad Street Columbus, OH 43216-500
3、0 7. CAGE CODE 67268 9. TITLE OF DOCUMENT MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, QUAD 2-INPUT OR GATE, MONOLITHIC SILICON 10. REVISION LETER Form Approved OMB NO. 0704-0188 a. CURRENT Initial 2. PROCURING ACTIVITY NO. b. NEW A 3. DODAAC b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR
4、 GOVERNMENT DSCC-VAC 6. NOR NO. 596243059-99 c. TYPED NAME (First, Middle Initial, Last) MONICA L. POELKING 8. DOCUMENT NO. 5962-98624 d. TITLE CHIEF, CUSTOM MICROELECTRONICS TEAM 11. ECP NO. No users listed. e. SIGNATURE MONICA L. POELKING 13. DESCRIPTION OF REVISION Sheet 1: Revisions Itr column;
5、add “A“. Revisions description column; add “Changes in accordance with NOR 5962-R059-99“. Revisions date column; add 99-04-13“. Revision level block; add “A“. Rev status of sheets: for sheets 1.4 and 17 through 23, add “A. Sheet 4: Add new paragraph which states; “3.1.1 Microcircuit die. For the req
6、uirements for microcircuit die, see appendix A to this document.“ Revision level block; add “A“. Sheets 17 through 23: Add attached appendix A. CONTINUED ON NEXT SHEETS 15a. ACTIVITY ACCOMPLISHING REVISION DSCC-VAC 14. THIS SECTION FOR GOVERNMENT USE ONLY b. REVISION COMPLETED (Signature) JOSEPH A.
7、KERBY (1) Existing document supplemented by the NOR may be used in manufacture. (2) Revised document must be received before manufacturer may incorporate this change. (3) Custodian of master document shall make above revision and furnish revised document. f. DATE SIGNED (YYMMDD) 99-04-1 3 c. DATE SI
8、GNED (YYMMDD) 99-04-1 3 ID Form 1695, APR 92 Previous editions are obsolete. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-9Bb24 REV A e b 0338752 291 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 A
9、PPENDIX A APPENDIX A FORMS A PART OF SMD 5962-98624 SIZE A 5962-98624 REVISION LEVEL SHEET A 17 Document No: 5962-98624 Revision: A Sheet: 2 of 8 NOR NO: 5962-R059-99 10. SCOPE 10.1 Scoue. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufact
10、urers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are spec
11、ified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number (PIN). When available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. 10.2 m
12、. The PIN shall be as shown in the following example: 59,62 i 98624 t i JI, T Federal RHA Device Device Die Die Stock class designator type class code Details designator (see 10.2.1) (see 10.2.2) designator (see 10.2.4) (see 10.2.3) * Drawing Number 10.2.1 RHA desianator. Device classes Q and V RHA
13、identified die shall meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. 10.2.2 Device tvpels). The device type) shall identify the circuit function as follows: Device Wpe Generic number Circuit function o1 ACS32 Radiation hardened, SOS, advanced CMOS, quad 2-input OR ga
14、te. 10.2.3 Device class desianator. Device class Device requirements documentation QorV Certification and qualification to the die requirements of MIL-PRF-38535. ISCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-98b24 REV
15、 A m 9999996 0138753 128 m SIZE STANDARD MICROCIRCUIT DRAWING A DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-98624 5962-98624 REVISION LEVEL SHEET A 18 Document No: 5962-98624 Revision: A Sheet: 3 of 8 NOR NO: 59624059-99 10.2.4 Die Details.
16、 The die details designation shall be a unique letter which designates the dies physical dimensions, bonding pad location(s) and related electrical function(c), interface materials, and other assembly related information, for each product and variant supplied to this appendix. 10.2.4.1 Die Phvsical
17、dimensions. Die TvDe Fiaure number o1 A- 1 10.2.4.2 Die Bondina Dad locations and Electrical functions. Die TVRe Fiaure number o1 A- 1 1024.3 Interface Materials. Die TvDe Fioure number o1 A- 1 10.2.4.4 Assemblv related information. Die TvDe Fiaure number o1 A- 1 10.3 Absolute maximum ratinas. See p
18、aragraph 1.3 within the body of this drawing for details. 10.4 Recommended ooeratina conditions. See paragraph 1.4 within the body of this drawing for details. 20. APPLICABLE DOCUMENTS 20.1 Government sDecifications. standards, bulletin, and handbooks. Unless otherwise specified, the following speci
19、fications, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein. DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduct
20、ion or networking permitted without license from IHS-,-,-SMD-59b2-9b24 REV A .I 999997b 0338754 Ob4 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-98624 SIZE 5962-98624 A REVISION LEVEL SHEET A 19 Document No: 59
21、62-98624 Revision: A Sheet: 4 of 8 NOR NO: 5962-R059-99 SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Methods and Procedures for Microelectronics. HANDBOOK DEPARTMENTOFDEFENSE MIL-
22、HDBK-103 - List of Standardized Military Drawings (SMDs). (Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific 20.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the a
23、cquisition functions should be obtained from the contracting activity or as directed by the contracting activity). text of this drawing shall take precedence. 30. REQUIREMENTS 30.1 Item Reauirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-3853
24、5 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit or function as described herein. specified in MIL-PRF-38535 and the manufacturers QM plan, for device classes Q and V and herein. 30.2 Des
25、ian, construction and DhVSiCal dimensions. The design, construction and physical dimensions shall be as 30.2.1 Die Phvsical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-I. 30.2.2 Die bondina Dad locations and electrical functions. The die bonding pad loca
26、tions and electrical functions shall be 30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-I. 30.2.4 Assemblv related information. The assembly related information shall be as specified in 10.2.4.4 and figure A-1. 30.2.5 Truth table. The
27、 truth table shall be as defined within paragraph 3.2.3 of the body of this document. 30.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.6 of the body of as specified in 10.2.4.2 and on figure A-1. this document. DCCC FORM 2234 APR 97 Provided
28、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SflD-5962-98624 REV A H 9999996 0338755 TTO 30.3 Electrical performance characteristics and Dost- irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and p
29、ost-irradiation parameter limits are as specified in table I of the body of this document. 30.4 Electrical test reauirements. The wafer probe test requirements shall include functional and parametric testing 30.5 Markinq. As a minimum, each unique lot of die, loaded in single or multiple stack of ca
30、rriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturers identification and the PIN sufficient to make the packaged die capable of meeting the electrical performance requirements in table I. listed in 10.2 herein. The certification
31、mark shall be a “QML“ or “GY as required by MIL-PRF-38535. 30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 60.4 herein). The certificate of com
32、pliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. 30.7 Certificate of conformance. A certificate of conformance
33、as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing. 40. QUALITY ASSURANCE PROVISIONS 40.1 Samplina and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF
34、-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modifications in the QM plan shall not effect the form, fit or function as described herein. manufacturers QM plan. As a minimum it shall consist of: 40.2 Screeninq. For device classes Q and V, screening shall be in
35、accordance with MIL-PRF-38535, and as defined in the a) Wafer Lot acceptance for Class V product using the criteria defined within MIL-STD-883 TM 5007. b) 100% wafer probe (see paragraph 30.4). c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM20
36、10 or the alternate procedures allowed within MIL-STD-883 TM5004. APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-98624 STANDARD MICROCIRCUIT DRAWING DEFENSESUPPLYCENTERCOLUMBUS I COLUMBUS, OHIO 4321 6-5000 Document No: 5962-98624 Revision: A Sheet: 5 of 8 NOR NO: 5962-R059-99 SIZE 5962-9ai24 A REVIS
37、ION LEVEL SHEET A 20 DSCG FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-98b24 REV A II 999999b 0138756 933 I SIZE 5962-9a624 STANDARD MICROCIRCUIT DRAWING A COLUMBUS, OHIO 43216-5000 A 21 I DEFENSE SUPPLY CENTER COLUMBUS R
38、EVISION LRIEL SHEET APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-98624 I I I I DSCC FORM 2234 APR 97 Document No: 5962-98624 Revision: A Sheet: 6 of 8 NOR NO: 596243059-99 40.3 Conformance inspection. 40.3.1 Grow E insoection. Group E inspection is required only for parts intended to be identified
39、 as radiation assured (see 30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table HA herein. Group E tests and conditions are as specified within paragraphs 4.4.4.1, 4.4.4.1.1, 4.4.4.2, 4
40、.4.4.3 and 4.4.4.4. 50. DIE CARRIER 50.1 Die carrier reauirements. The requirements for the die carrier shall be in accordance with the manufacturers QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic
41、 protection. 60. NOTES 60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications and logistics purposes. 60.2 Comments
42、. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone (61 4)-692-0674. 60.3 Abbreviations, svmbols and definitions. The abbreviations, symbols, and definitions used herein are defined with 60.4 Sources of SumIv for device classes Q and V. Sources of suppl
43、y for device classes Q and V are listed in QML- 38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and have agreed to this drawing. MIL-PRF-38535 and MIL-HDBK-1331. Provided by IHSNot for ResaleNo reproduction or networking permitted wi
44、thout license from IHS-,-,-SMD-5962-96624 REV A 9 91b 0338757 873 STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-98624 SIZE 5962-98624 A REVISION LEVEL SHEET A 22 Document No: 5962-98624 Revision: A Sheet: 7 of 8
45、NOR NO: 5962-R059-99 FIGURE A-i o DIE PHYSICAL DIMENSIONS Die Size: Die Thickness: 2390 x 2390 microns. 21 +/-2 mils. o DIE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONS The following metallization diagram supplies the locations and electrical functions of the bonding pads. The internal metallizati
46、on layout and alphanumeric information contained within this diagram may or may not represent the actual circuit defined by this SMD. R GVCi # (2 NOTE: Pad numbers reflect terminal numbers when placed in Case Outlines C, X (see Figure 1). APR 97 Provided by IHSNot for ResaleNo reproduction or networ
47、king permitted without license from IHS-,-,-SUD-5962-78624 REV A 9999996 0338758 70“ STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-98624 SIZE 5962-98624 A REVISION LEVEL SHEET A 23 o INTERFACE MATERIALS Metal 1:
48、AlSi 7.0kA +I- 1 .OkA Metal 2 (Top) : AlSi 1 O.OkA +I- 1 .OkA Backside Metallization None Glassivation Type: PSG Thickness 13.0kA +/ - 1.5kA Substrate: Silicon on Sapphire (SOS) o ASSEMBLY RELATED INFORMATION Substrate Potential: Insulator. Special assembly instructions: Bond pad #14 (VCC) first. Do
49、cument No: 5962-98624 Revision: A Sheet: 8 of 8 NOR NO: 5962-R059-99 DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-78b24 REV A H 9999996 O338759 b4b STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 99-04-13 Approved sources of supply for SMD 5962-98624 are listed below for immediate acquisition information only an
