DLA SMD-5962-98639 REV E-2011 MICROCIRCUIT LINEAR RADIATION HARDENED ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

上传人:visitstep340 文档编号:701333 上传时间:2019-01-01 格式:PDF 页数:13 大小:87.98KB
下载 相关 举报
DLA SMD-5962-98639 REV E-2011 MICROCIRCUIT LINEAR RADIATION HARDENED ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf_第1页
第1页 / 共13页
DLA SMD-5962-98639 REV E-2011 MICROCIRCUIT LINEAR RADIATION HARDENED ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf_第2页
第2页 / 共13页
DLA SMD-5962-98639 REV E-2011 MICROCIRCUIT LINEAR RADIATION HARDENED ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf_第3页
第3页 / 共13页
DLA SMD-5962-98639 REV E-2011 MICROCIRCUIT LINEAR RADIATION HARDENED ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf_第4页
第4页 / 共13页
DLA SMD-5962-98639 REV E-2011 MICROCIRCUIT LINEAR RADIATION HARDENED ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf_第5页
第5页 / 共13页
点击查看更多>>
资源描述

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make change to 1.5 and add subgroup 4 to device class V and group E section as specified in table IIA. ro 99-07-30 R. MONNIN B Drawing updated to reflect current requirements. gt 03-02-20 R. MONNIN C Add enhanced low dose rate effects (ELDRS) par

2、agraph to 1.5 and table I. - rrp 05-10-28 R. MONNIN D Add the words “condition A” after method 1019 as specified under 4.4.4.1. Delete Accelerated aging test, paragraph 4.4.4.1.1. - ro 07-06-12 R. HEBER E Make change to the VIOtest subgroups by deleting 4,5,6 and substituting 1,2,3 under Table I. Ma

3、ke change to the VIO/t test subgroups by deleting 5,6 and substituting 2,3 under Table I. Make change to the all CMRR, PSRR, and AVStest subgroups by deleting 4,5,6 and substituting 1,2,3 under Table I. Delete subgroups 5 and 6 from Tabel IIA. Add subgroups 5 and 6 to paragraph 4.4.1b. Add two footn

4、otes under Table IIB. Delete paragraph 4.4.4.2. - ro 11-03-28 C. SAFFLE REV SHET REV SHET REV STATUS REV E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT D

5、RAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, RADIATION HARDENED, ULTRA-LOW OFFSET VOLTAGE OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 98-10-08 AMSC

6、 N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-98639 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E071-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98639 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 R

7、EVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in t

8、he Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 98639 01 V G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device cla

9、ss designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-P

10、RF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 OP07A Radiation hardened, single ultr

11、a low offset operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class

12、 level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can H GD

13、FP1-F10 or CDFP2-F10 10 Flat pack P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduc

14、tion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98639 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 22.0 V dc Input voltage (VIN) 22.0 V dc 2/ D

15、ifferential input voltage . 30 V dc Internal power dissipation (PD) . 500 mW Output short circuit duration Indefinite Lead temperature (soldering, 10 seconds) +300C Junction temperature (TJ) . +150C Storage temperature range . -65C to +150C Thermal resistance, junction-to-case (JC) . See MIL-STD-183

16、5 Thermal resistance, junction-to-ambient (JA): Cases G and H +150C/W Case P . +119C/W Case 2 . +110C/W 1.4 Recommended operating conditions. Supply voltage range (VS) 4.5 V dc to 20 V dc Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (d

17、ose rate = 50 300 rads (Si)/s) . 100 krads 3/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For supply voltage less than 22 V, the absolute maximum input voltage is

18、 equal to the supply voltage. 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. Provided b

19、y IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98639 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and

20、handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circu

21、its, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 -

22、 Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the

23、text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for de

24、vice classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device

25、 class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V

26、or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall

27、be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating

28、 temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers

29、 PIN may also be marked. For packages where marking of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and

30、V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98639 DLA LAND AND MARITIME COLUM

31、BUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Input offset voltage VIO3/ 1 01 -25 +25 V 2,3 -60 +60 M,D,P,L,R

32、 4/ 1 -400 +400 Input offset voltage temperature sensitivity VIO/ t 5/ 2,3 01 -0.6 +0.6 V/C Input bias current +IIB1 01 -2 +2 nA 2,3 -4 +4 -IIB1 -2 +22,3 -4 +4 IIBM,D,P,L,R 4/ 1 -125 +125 Input offset current IIO1 01 -2 +2 nA 2,3 -4 +4 M,D,P,L,R 4/ 1 -25 +25 Power supply 5/ rejection ratio +PSRR +VS

33、= +20 V to +5 V, 1 01 -10 10 V/V -VS= -15 V 2,3 -20 20 -PSRR +VS= +15 V, 1 -10 10 -VS= -20 V to -5 V 2,3 -20 20 PSRR VS= 4.5 V to 20 V 1 -10 10 2,3 -20 20 Common mode 5/ rejection ratio CMRR VCM= 13 V 1 01 110 dB 2,3 106 Adjustment short 5/ circuit current +VIOADJ VCM= 0 V 1 01 0.5 mV -VIOADJ -0.5 O

34、utput short circuit current +IOSt 25 ms 5/ 6/ 1,2 01 -65 mA 3 -70 -IOS1,2 653 70 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98639 DLA LAND AND MARITIME COLUMBUS, OHIO 43218

35、-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Supply current ISVCM= 0 V 1 01 4 mA 2,3 5 M,D,P,L,R 4/ 1 4 Output

36、voltage swing 5/ (minimum) VOPRL= 1 k 1,2,3 01 -10 10 V RL= 2 k -12 12 Open loop voltage gain (single ended) +AVSVOUT= 0 V to +10 V, 1 01 300 V / mV RL= 2 k 2,3 200 -AVSVOUT= 0 V to -10 V, 1 300 RL= 2 k 2,3 200 AVSVOUT= 10 V, RL= 2 k 1 100 M,D,P,L,R 4/ Slew rate 5/ +SR, -SR VIN= 5 V, AV= 1 4 01 .08

37、V / s Input noise voltage 5/ density En fO= 10 Hz 4 01 18 nV / Hz fO= 100 Hz 14 fO= 1 kHz 12 Low frequency input 5/ noise voltage Enpp fO= 0.1 Hz to 10 Hz 4 01 0.6 VPP1/ VS= 15 V and VCM= 0 V. 2/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate

38、 effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 3/ Due to the inherent warm-up drift of device type 01, testing shall occur no sooner than five minutes after application of power. 4/ Devices supp

39、lied to this drawing have been characterized through all levels M, D, P, L, and R of irradiation. However, this device is only tested at the “R“ level. Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for an

40、y RHA level, TA= +25C. 5/ This parameter is not tested to post irradiation. 6/ Continuous short circuit limits are considerably less than the indicated test limits since maximum power dissipation cannot be exceeded. Provided by IHSNot for ResaleNo reproduction or networking permitted without license

41、 from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98639 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outlines G and P H 2 Terminal number Terminal symbol 1 VIOTRIM NC NC2 -INPUT VIOTRIM VIOTRIM 3 +INPUT -INPUT NC4 -VS+INPUT

42、NC 5 NC-VS-INPUT 6 OUTPUT NC NC 7 +VSOUTPUT +INPUT 8 VIOTRIM +VSNC 9 - VIOTRIM NC 10 - NC -VS11 - - NC 12 - - NC 13 - - NC 14 - - NC 15 - - OUTPUT 16 - - NC 17 - - +VS18 - - NC 19 - - NC 20 - - VIOTRIM NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or

43、 networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98639 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 8 DSCC FORM 2234 APR 97 FIGURE 2. Radiation exposure circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted

44、 without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-98639 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 9 DSCC FORM 2234 APR 97 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in M

45、IL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this d

46、rawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approv

47、ed source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conforman

48、ce as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this d

展开阅读全文
相关资源
猜你喜欢
相关搜索

当前位置:首页 > 标准规范 > 国际标准 > 其他

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1