DLA SMD-5962-99506-1999 MICROCIRCUIT DIGITAL CMOS 10-BIT BUS-EXCHANGE SWITCH WITH THREE-STATE OUTPUTS AND LEVEL SHIFTING TTL COMPATIBLE INPUTS MONOLITHIC SILICON《微型电路 数字型 带三态输出和水平转.pdf

上传人:eventdump275 文档编号:701350 上传时间:2019-01-01 格式:PDF 页数:16 大小:81.09KB
下载 相关 举报
DLA SMD-5962-99506-1999 MICROCIRCUIT DIGITAL CMOS 10-BIT BUS-EXCHANGE SWITCH WITH THREE-STATE OUTPUTS AND LEVEL SHIFTING TTL COMPATIBLE INPUTS MONOLITHIC SILICON《微型电路 数字型 带三态输出和水平转.pdf_第1页
第1页 / 共16页
DLA SMD-5962-99506-1999 MICROCIRCUIT DIGITAL CMOS 10-BIT BUS-EXCHANGE SWITCH WITH THREE-STATE OUTPUTS AND LEVEL SHIFTING TTL COMPATIBLE INPUTS MONOLITHIC SILICON《微型电路 数字型 带三态输出和水平转.pdf_第2页
第2页 / 共16页
DLA SMD-5962-99506-1999 MICROCIRCUIT DIGITAL CMOS 10-BIT BUS-EXCHANGE SWITCH WITH THREE-STATE OUTPUTS AND LEVEL SHIFTING TTL COMPATIBLE INPUTS MONOLITHIC SILICON《微型电路 数字型 带三态输出和水平转.pdf_第3页
第3页 / 共16页
DLA SMD-5962-99506-1999 MICROCIRCUIT DIGITAL CMOS 10-BIT BUS-EXCHANGE SWITCH WITH THREE-STATE OUTPUTS AND LEVEL SHIFTING TTL COMPATIBLE INPUTS MONOLITHIC SILICON《微型电路 数字型 带三态输出和水平转.pdf_第4页
第4页 / 共16页
DLA SMD-5962-99506-1999 MICROCIRCUIT DIGITAL CMOS 10-BIT BUS-EXCHANGE SWITCH WITH THREE-STATE OUTPUTS AND LEVEL SHIFTING TTL COMPATIBLE INPUTS MONOLITHIC SILICON《微型电路 数字型 带三态输出和水平转.pdf_第5页
第5页 / 共16页
点击查看更多>>
资源描述

1、REVISIONSLTR DESCRIPTION DATE (YR -MO -DA) APPROVEDREVSHEETREVSHEET 15REV STATUS REVOF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14PMIC N/A PREPARED BYJoseph A. Kerby DEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYCharles F. Saffle, Jr.COLUMBUS, OHIO 43216-5000THIS DRAWING IS AV

2、AILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMonica L. PoelkingMICROCIRCUIT, DIGITAL, CMOS,10-BIT BUS-EXCHANGE SWITCH WITH THREE-STATE OUTPUTSAND LEVEL SHIFTING, TTL COMPATIBLE INPUTS,AND AGENCIES OF THEDEPARTMENT OF DEFENSE DRAWING APPROVAL DATE99-05-25MONOLITHIC SILICONAMSC N/A REVISION LEVEL SIZEAC

3、AGE CODE67268 5962-99506SHEET1 OF 15DSCC FORM 2233APR 97 5962 -E275 -99DISTRIBUTION STATEMENT A . Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-99506DEFEN

4、SE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 2DSCC FORM 2234APR 971. SCOPE1.1 Scope . This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead

5、 finishes are available and are reflected in thePart or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in thePIN.1.2 PIN . The PIN is as shown in the following example:5962 - 99506 01 Q K X* * * * * * * * * * * * * * * * Federal RHA Devi

6、ce Device Case Leadstock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/Drawing number1.2.1 RHA designator . Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with the app

7、ropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash ( -) indicates a non -RHA device.1.2.2 Device type(s) . The device type(s) identify the circuit function as follows:Device type

8、 Generic number Circuit function01 54LVX3383 10-bit bus-exchange switch with three-stateoutputs and level shifting, TTL compatibleinputs1.2.3 Device class designator . The device class designator is a single letter identifying the product assurance level asfollows:Device class Device requirements do

9、cumentationM Vendor self -certification to the requirements for MIL-STD-883 compliant,non -JAN class level B m icrocircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s) . The case outline(s) are as designated in MIL-STD-1835

10、and as follows:Outline letter Descriptive designator Terminals Package styleK GDFP2-F24 or CDFP3-F24 24 Flat packageL GDIP3-T24 or CDIP4-T24 24 Dual-in-line3 CQCC1-N28 28 Square leadless chip carrier 1 /1.2.5 Lead finish . The lead finish is as specified in MIL-PRF-38535 for device classes Q and V o

11、r MIL-PRF-38535, appendixA for device class M._1 / This package is not available from an approved source of supply as of the date of this drawing.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-99506DEFENSE SUPP

12、LY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 3DSCC FORM 2234APR 971.3 Absolute maximum ratings . 1 / 2 / 3 /Supply voltage range (V CC ) . -0.5 V dc to +7.0 V dcDC switch voltage range (V S ) -0.5 V dc to +7.0 V dc 4 /DC input voltage range (V IN ) . -0.5 V dc to +7.0 V dc 4 /DC

13、input clamp current (I IK ) (V IN 0.0) . -20 mADC output clamp current (I OK ) (V O 0.0) -20 mADC output source or sink current (I O ) 30 mAMaximum power dissipation (P D ) 500 mWStorage temperature range (T STG ) -65 C to +150 CLead temperature (soldering, 10 seconds) . +300 CThermal resistance, ju

14、nction -to -case ( JC ) See MIL -STD -1835Junction temperature (T J ) . +175 C1.4 Recommended operating conditions . 2 / 3 / 5 /Supply voltage range (V CC ) . +4.5 V dc to +5.5 V dcInput voltage range (V IN ) . 0.0 V dc to V CCMinimum high level control input voltage (V IH ) +2.0 V dcMaximum low lev

15、el control input voltage (V IL ) . +0.8 V dcCase operating temperature range (T C ) -55 C to +125 CControl input rise or fall times ( t/ V) . 0 to 8 ns/V1 / Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade perfor

16、mance and affect reliability. Maximum junction temperature shall not be exceededexcept for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883.2 / Unless otherwise noted, all voltages are referenc ed to GND.3 / The limits for the parameters specified h

17、erein shall apply over the full specified V CC range and case temperature range of-55 C to +125 C.4 / The input and output negative-voltage ratings may be exceeded provided that the input and ou tput clamp-current ratingsare observed.5 / Unused pins must be held high or low. They may not float.Provi

18、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-99506DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 4DSCC FORM 2234APR 972. APPLICABLE DOCUMENTS2.1 Government specification, standards, a

19、nd handbooks . The following specification, standards, and handbooks form apart of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed inthe issue of the Department of Defense Index of Specifications and Standards (DoDISS) and suppl

20、ement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL -STD -883 - Test Methods and Procedures for Microelectronics.MIL-STD-973 - Configuration Management.MIL-STD-1835 -

21、 Microcircuit Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDs).MIL -HDBK -780 - Standard Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Ord

22、er Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence . In the event of a conflict between the text of this drawing and the references cited herein, the textof this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and re

23、gulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements . The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodif

24、ication in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.2 Design, construction, and physical dimensions

25、. The design, construction, and physical dimensions shall be as specifiedin MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outlines . The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections . The

26、 terminal connections shall be as specified on figure 1.3.2.3 Truth table . The truth table shall be as specified on figure 2.3.2.4 Logic diagram . The logic diagram shall be as specified on figure 3.3.2.5 Switching waveforms and test circuit . The switching waveforms and test circuit shall be as sp

27、ecified on figure 4.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-99506DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 5DSCC FORM 2234APR 973.2.6 Radiation exposure circuit . The r

28、adiation exposure circuit shall be as specified when available.3.3 Electrical performance characteristics and postirradiation parameter limits . Unless otherwise specified herein, theelectrical performance characteristics and postirradiation parameter limits are as specified in table I and shall app

29、ly over the fullcase operating temperature range.3.4 Electrical test requirements . The electrical test requirements shall be the subgroups specified in table II. The electricaltests for each subgroup are defined in table I.3.5 Marking . The part shall be marked with the PIN listed in 1.2 herein. In

30、 addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, theRHA designato

31、r shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark . The certification mark for device classes Q and V shall be a “QML“ or “Q“ as re

32、quired inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance . For device classes Q and V, a certificate of compliance shall be required from a QML -38535listed manufacturer in order to supply to the requirements

33、 of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance submitted to DSCC -VA prior to listing as an approved sourc

34、e of supply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance . A certificate of conformance as requ

35、ired for device classes Q and V in MIL-PRF-38535 orfor device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.3.8 Notification of change for device class M . For device class M, notification to DSCC -VA of change of product (see 6.2here

36、in) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973.3.9 Verification and review for device class M . For device class M, DSCC, DSCCs agent, and the acquiring activity retainthe option to review the manufacturers facility and applicable required documen

37、tation. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M . Device class M devices covered by this drawing shall be inmicrocircuit group number 39 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo r

38、eproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-99506DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics .Test andMIL -STD -883test method 1 /Symbol T

39、est conditions 2 /-55 C T C +125 C+4.5 V V CC +5.5 VV CC Group AsubgroupsLimits 3 / Unitunless otherwise specified Min MaxNegative input clampvoltage3022V IC- For input under test, I IN = -18 mA 4.5 V 1, 2, 3 -1.2 VInput current high3010I IH For input under test, V IN = 5.5 V 5.5 V 1, 2, 3 +1.0 AInp

40、ut current low3009I IL For input under test, V IN = GND 5.5 V 1, 2, 3 -1.0 AQuiescent supplycurrent3005I CC For all inputs, V IN = V CC or GNDI OUT = 0.0 A5.5 V 1, 2, 3 10.0 AQuiescent supplycurrent delta,TTL input levels3005I CC4 /Control pinsFor input under test,V IN = V CC 2.1 VFor all other inpu

41、ts, V IN = V CC or GND5.5 V 1, 2, 3 2.5 mAThree-state outputleakage currenthigh3021I OZH5 /V OUT = 5.5 VBE = V IH5.5 V 1, 2, 3 10.0 AThree-state outputleakage currentlow3020I OZL5 /V OUT = 0.0 VBE = V IH5.5 V 1, 2, 3 -10.0 AOff-state leakagecurrentI OFF For input or output under test,V IN or V OUT =

42、 5.5 VAll other inputs or outputs at 0.0 V0.0 V 1, 2, 3 10.0 AOn-state resistance r ON 4.5 V 1, 3 7.0 6 /V IN = 0.0 V, I IN = 30 mA2 10.01, 3 15.0V IN = 2.4 V, I IN = 15 mA2 20.0See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IH

43、S-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-99506DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 7DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics - Continued.Test andMIL -STD -883test method 1 /Symbol Test conditions 2 /-55 C T C +125 C+4.5 V V CC +5

44、.5 VV CC Group AsubgroupsLimits 3 / Unitunless otherwise specified Min MaxInput capacitance3012C IN Control pinsT A = +25C, See 4.4.1cGND 4 12.0 pFI/O port off-statecapacitance3012C I/O5 /T A = +25C, See 4.4.1cBE = V CC5.0 V 4 20.0 pFFunctional test30147 / V IN = V IH or V ILVerify output V OSee 4.4

45、.1b4.5 Vand5.5 V7, 8 L HPropagation delay timeAn or Bn to Cn or Dn3003t PLH1 ,t PHL18 /C L = 50 pF minimumR L = 500 See figure 44.5 Vand5.5 V9, 10, 11 0.25 nsPropagation delay timeBX to An, Bn, Cn,or Dn3003t PLH2 ,t PHL29 /C L = 50 pF minimumR L = 500 See figure 44.5 Vand5.5 V9, 10, 11 1.5 7.0 nsPro

46、pagation delay time,output enable,BE to An, Bn, Cn,or Dn3003t PZL ,t PZH9 /C L = 50 pF minimumR L = 500 See figure 44.5 Vand5.5 V9, 10, 11 1.5 7.0 nsPropagation delay time,output disable,BE to An, Bn, Cn,or Dn3003t PLZ ,t PHZ9 /C L = 50 pF minimumR L = 500 See figure 44.5 Vand5.5 V9, 10, 11 1.5 7.0

47、nsSee footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-99506DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL SHEET 8DSCC FORM 2234APR 97TABLE I. Electrical performa

48、nce characteristics - Continued.1 / For tests not listed in the referenced MIL-STD-883, utilize the general test procedure of 883 under the conditions listedherein.2 / Each input/output, as applicable, shall be tested at the specified temperature, for the specified limits, to the tests in tableI herein. Output terminals not designated shall be high level logic, low level logic, or open, except for the I CC and I CCtest, where the output terminals shall be open. When performing the I CC and I CC tests, the current meter shall beplaced in the circuit

展开阅读全文
相关资源
猜你喜欢
  • BS EN 14204-2012 Chemical disinfectants and antiseptics Quantitative suspension test for the evaluation of mycobactericidal activity of chemical disinfectants and antiseptics used n.pdf BS EN 14204-2012 Chemical disinfectants and antiseptics Quantitative suspension test for the evaluation of mycobactericidal activity of chemical disinfectants and antiseptics used n.pdf
  • BS EN 14205-2003 Natural stone test methods - Determination of Knoop hardness《天然石料的试验方法 努氏硬度测定》.pdf BS EN 14205-2003 Natural stone test methods - Determination of Knoop hardness《天然石料的试验方法 努氏硬度测定》.pdf
  • BS EN 14206-2003 Inland navigation vessels - Gangways for passenger vessels - Requirements tests《内河航行运载工具 客轮通道 要求和试验》.pdf BS EN 14206-2003 Inland navigation vessels - Gangways for passenger vessels - Requirements tests《内河航行运载工具 客轮通道 要求和试验》.pdf
  • BS EN 14207-2003 Water quality - Determination of epichlorohydrin《水质 表氯醇的测定》.pdf BS EN 14207-2003 Water quality - Determination of epichlorohydrin《水质 表氯醇的测定》.pdf
  • BS EN 14208-2004 Transportable gas cylinders - Specification for welded pressure drums up to 1000 litre capacity for the transport of gases - Design and construction《可移动式储气瓶 气体运输用容.pdf BS EN 14208-2004 Transportable gas cylinders - Specification for welded pressure drums up to 1000 litre capacity for the transport of gases - Design and construction《可移动式储气瓶 气体运输用容.pdf
  • BS EN 14209-2017 Preformed plasterboard cornices Definitions requirements and test methods《预制石膏板檐口 定义、要求和试验方法》.pdf BS EN 14209-2017 Preformed plasterboard cornices Definitions requirements and test methods《预制石膏板檐口 定义、要求和试验方法》.pdf
  • BS EN 14210-2004 Surface active agents - Determination of interfacial tension of solutions of surface active agents by the stirrup or ring method《表面活性剂 用扰动或圆环法测定表面活性剂溶液的界面张力》.pdf BS EN 14210-2004 Surface active agents - Determination of interfacial tension of solutions of surface active agents by the stirrup or ring method《表面活性剂 用扰动或圆环法测定表面活性剂溶液的界面张力》.pdf
  • BS EN 14211-2012 Ambient air Standard method for the measurement of the concentration of nitrogen dioxide and nitrogen monoxide by chemiluminescence《环境空气 利用化学发光测量二氧化氮和一氧化氮浓度的标准方法》.pdf BS EN 14211-2012 Ambient air Standard method for the measurement of the concentration of nitrogen dioxide and nitrogen monoxide by chemiluminescence《环境空气 利用化学发光测量二氧化氮和一氧化氮浓度的标准方法》.pdf
  • BS EN 14212-2012 Ambient air Standard method for the measurement of the concentration of sulphur dioxide by ultraviolet fluorescence《环境空气 利用紫外线荧光测量二氧化硫浓度的标准方法》.pdf BS EN 14212-2012 Ambient air Standard method for the measurement of the concentration of sulphur dioxide by ultraviolet fluorescence《环境空气 利用紫外线荧光测量二氧化硫浓度的标准方法》.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1