1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to 1.3, 1.4, and line regulation test as specified in table I. - ro 99-08-23 R. MONNIN B Add case outline Y. Make changes to 1.2.4, 1.3, figure 1, and table IIB. - ro 99-10-08 R. MONNIN C Make changes to figure 2. - ro 99-12-17 R. MO
2、NNIN D Make changes to case Y, dimension D2as specified in figure 1. - ro 00-01-21 R. MONNIN E Make changes to case Y, dimensions A and E2as specified in figure 1. - ro 00-04-06 R. MONNIN F Make changes to VREF, RLINE, IADJ, IADJtests as specified in TABLE I herein. - ro 00-12-07 R. MONNIN G Add cas
3、e outline U. Make changes to 1.2.4, 1.3, table I, and figure 1. - ro 01-06-06 R. MONNIN H Add Input-output voltage differential limit under 1.3 and SET limits under 1.5. - ro 04-12-21 R. MONNIN J Add enhanced low dose rate effects (ELDRS) paragraph to 1.5 and table I. Deleted dose rate induced latch
4、up testing paragraph in section 4. - rrp 06-05-09 R. MONNIN K Delete the output voltage range limit from paragraph 1.3 and the accelerated aging test paragraph under section 4. - ro 08-04-22 R. HEBER L Add device types 02 and 03. Make changes to 1.2.2, 1.5, Table I, figure 2, 4.4.4.2, and Appendix A
5、. -rrp 11-09-06 C. SAFFLE REV SHEET REV L L L SHEET 15 16 17 REV STATUS REV L L L L L L L L L L L L L L OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING T
6、HIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, RADIATION HARDENED, ADJUSTABLE POSITIVE VOLTAGE REGULATOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 99-07-23 AMSC N/A REVISION LEV
7、EL L SIZE A CAGE CODE 67268 5962-99547 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E488-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99547 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L S
8、HEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device classes Q and M), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines
9、and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of the
10、ir evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 F 99547 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finis
11、h (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels an
12、d are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-117RH Radiation hardened (HDR), adjustable positive voltage regulator 02 HS-11
13、7EH Radiation hardened (HDR and LDR), adustable positive voltage regulator 03 HS-117 Adjustable positive voltage regulator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation
14、M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the de
15、vice manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style U See figure 1 3 Can X MSFM1-P3 3 Single row flange mount with isolated tab and ceramic seal
16、ed. Y CBCC1-N3 3 Bottom terminal chip carrier Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99547 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 3 DSCC FORM 2234 APR 97 1.2.5 Lead fi
17、nish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V or MIL-PRF-38535, appendix A for device class M. 1.3 Absolute maximum ratings. 1/ Input-output voltage differential . 40 V dc Maximum output current (IMAX) 1.5 A Maximum power dissipation (PD): 2/ TC= +25C: Case U 8
18、 W Case X . 50 W Case Y . 27.5 W TC= +100C: Case U 3.3 W Case X . 20 W Case Y . 11 W Junction temperature maximum (TJ) . 175C Lead temperature (soldering, 10 seconds) 265C Storage temperature range . -65C to +150C Thermal resistance, junction-to-case (JC): Case U 15C/W Case X . 2.5C/W Case Y . 4.5C/
19、W 1.4 Recommended operating conditions. Output voltage range 1.25 V dc to 37 V dc Input voltage range . 4.25 V dc to 40 V dc Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rad(Si)/s): Device types 01 and 02 3 x 105rad
20、s (Si) Device type 01 class T 1 x 105rads (Si) ELDRS test ( low dose rate 10 mrad(Si)/s): Device class V: Device type 01 Not production tested 3/ Device type 02 50 krad(Si) 3/ 4/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maxim
21、um levels may degrade performance and affect reliability. 2/ The linear derating factor for case U is 0.067 W/C, case X is 0.4 W/C and case Y it is 0.22 W/C. 3/ For device types 01 and 02, the manufacturer supplying RHA parts on this drawing has performed characterization testing to a level of 50 kr
22、ad(Si) that demonstrates the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 method 1019 paragraph 3.13.1.1. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A and/or D
23、 as applicable. 4/ Device type 02 is production lot acceptance tested on a wafer by wafer basis to 50 krad(Si) at low dose rate ( 10 mrad(Si)/s). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99547 DLA LAND
24、 AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 4 DSCC FORM 2234 APR 97 1.5 Radiation features continued. Single event phenomena (SEP) (Device types 01 and 02): No single event transients (SET) (at 100mV) at effective linear energy transfer (LET) 15 MeV/mg/cm25/ No single event burn-o
25、ut (SEB) to an effective linear energy transfer (LET) . 87.4 MeV/mg/cm2Latch up immune (Device types 01 and 02) None 6/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent spec
26、ified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standa
27、rd Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/
28、quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in thi
29、s document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the de
30、vice manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifi
31、ed herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V or MIL-PR
32、F-38535, appendix A and herein for device class M. 3.2.1 Case outline). The case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Radiation exposure circuit. The radiation exposure circuit sh
33、all be as specified on figure 3. _ 5/ Input voltage 9 V and output capacitance 44 F. 6/ Guaranteed by process or design. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99547 DLA LAND AND MARITIME COLUMBUS, O
34、HIO 43218-3990 REVISION LEVEL L SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Reference voltage VREFVDIFF= 3.0 V, VDIFF= 40 V, 5.0 mA IL 5.5 mA 1,2
35、,3 01, 02, 03 1.2 1.3 V M,D,P,L,R,F 1 01, 02 1.2 1.3 Line regulation RLINEVREF= VOUT- VADJ, 1,2,3 01, 02, 03 0.02 %/V 3.0 V VDIFF 40 V, 5.0 mA IL 5.5 mA M,D,P,L,R,F 1 01, 02 0.02 Load regulation 3/ RLOADVDIFF= 3 V, 4/ 5 mA IL 500 mA, 5 mA IL 1.25 A 1,2,3 01, 02, 03 1.5 % M,D,P,L,R,F 1 01, 02 1.5 VDI
36、FF= 3 V, 5/ 5 mA IL 500 mA 1,2,3 01, 02, 03 1.5 M,D,P,L,R,F 1 01, 02 1.5 Adjustment pin current IADJVDIFF= 3.0 V, VDIFF= 40 V, 1,2,3 01, 02, 03 100 A 5.0 mA IL 5.5 mA M,D,P,L,R,F 1 01, 02 100 Adjustment pin current change IADJIADJ3 V IADJ40 V, 1 01, 02, 03 5 A 5.0 mA IL 5.5 mA 2,3 6 M,D,P,L,R,F 1 01
37、, 02 6 Output current IOUT4/ 1,2,3 01, 02, 03 1.25 A M,D,P,L,R,F 1 01, 02 1.25 5/ 1,2,3 01, 02, 03 0.50 M,D,P,L,R,F 1 01, 02 0.50 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962
38、-99547 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL L SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. 1/ Device types 01 and 02 supplied to this drawing meet all levels M, D, P, L, R and F of irradiation for classes M, Q, and V and levels M,
39、 D, P, L, and R for class T. However, device types 01 and 02 (classes M, Q, and V) are only tested at the F level, and class T is only tested at the R level (see paragraph 1.5) in accordance with MIL-STD-883 method 1019 condition A (high dose rate). In addition, device type 02 (device class V) suppl
40、ied to this drawing is production lot acceptance tested on a wafer by wafer basis to the “L” level (50 krads(Si) in accordance with MIL-STD-883 method 1019 condition D (low dose rate). Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiati
41、on electrical measurements for any RHA level, TA= +25C. 2/ For device types 01 and 02, the manufacturer supplying RHA parts on this drawing has performed characterization testing to a level of 50 krad(Si) that demonstrates the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according
42、 to MIL-STD-883 method 1019 paragraph 3.13.1.1. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A and/or D as applicable. 3/ Regulation is measured at a constant junction temperature, using pulse testing with
43、 a low duty cycle. Changes in output voltage due to heating effects are covered under the specification for thermal regulation. Measurements taken at the output lead must be adjusted for lead resistance. 4/ Applies to case outlines X and Y only. 5/ Applies to case outline U only. 3.3 Electrical perf
44、ormance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirement
45、s. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking
46、 of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-385
47、35. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in M
48、IL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land
