1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Table I: change VRIPmax limit from 625 to 400 mV p-p. Fro VRLINEchange max limit for (+VOUT) from 812 to 700 mV ; also for VRLINEchange max limit for (-VOUT) from 812 to 700 mV. Change maximum values for FSfrom 320 to 420 kHZ and 350 to 450 kHZ.
2、For VTLOADchange min max values from -250 and +250 to -600 mV pk and +600 mV pk. 05-07-28 Raymond Monnin B Added paragraph 1.5 and note 2. Added paragraph 3.2.3. Table I, add note for enhanced low dose rate effects. Paragraph 4.3.5.a, correct paragraph to add component tested dose rate. -sld 07-01-0
3、4 Joseph Rodenbeck C Added footnote 1 to table II, under group C end-point electricals. Updated drawing paragraphs. -sld 09-09-14 Charles F. Saffle REV SHEET REV SHEET REV STATUS REV C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY Gary Zahn DEFENSE SUPPLY CENT
4、ER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Michael C. Jones COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil/ THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Raymond Monnin MICROCIRCUIT, HYBRID, LINEAR, 12-VOLT, DUAL CHANNEL, DC-DC CONVERTER AND AGENCIES OF THE DEPARTMENT
5、OF DEFENSE DRAWING APPROVAL DATE 00-08-04 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-99556 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E384-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99556 DEF
6、ENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents five product assurance classes as defined in paragraph 1.2.3 and MIL-PRF-38534. A choice of case outlines and lead finishes which are available and are refl
7、ected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 - 99556 01 H X X Federal RHA Device Device Case Lead stock class designator type class outline fi
8、nish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 Radiation hardness assurance (RHA) designator. RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indi
9、cates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 SLH2812D DC-DC converter, 1.5 W, 12 V outputs 1.2.3 Device class designator. This device class designator shall be a single letter identifying the
10、 product assurance level. All levels are defined by the requirements of MIL-PRF-38534 and require QML Certification as well as qualification (Class H, K, and E) or QML Listing (Class G and D). The product assurance levels are as follows: Device class Device performance documentation K Highest reliab
11、ility class available. This level is intended for use in space applications. H Standard military quality class level. This level is intended for use in applications where non-space high reliability devices are required. G Reduced testing version of the standard military quality class. This level use
12、s the Class H screening and In-Process Inspections with a possible limited temperature range, manufacturer specified incoming flow, and the manufacturer guarantees (but may not test) periodic and conformance inspections (Group A, B, C and D). E Designates devices which are based upon one of the othe
13、r classes (K, H, or G) with exception(s) taken to the requirements of that class. These exception(s) must be specified in the device acquisition document; therefore the acquisition document should be reviewed to ensure that the exception(s) taken will not adversely affect system performance. D Manuf
14、acturer specified quality class. Quality level is defined by the manufacturers internal, QML certified flow. This product may have a limited temperature range. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals
15、 Package style X See figure 1 7 Dual-in-line Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99556 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.2.5
16、 Lead finish. The lead finish shall be as specified in MIL-PRF-38534. 1.3 Absolute maximum ratings. 1/ Input voltage range -0.5 V dc to +50 V dc Power dissipation (PD): Device type 01 (non-RHA) 1.2 W Device type 01 (RHA levels L and R) . 1.5 W Output power . 1.56 W Lead soldering temperature (10 sec
17、onds) . +300C Storage temperature range -65C to +150C 1.4 Recommended operating conditions. Input voltage range +16 V dc to +40 V dc Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 9 rad(Si)/s): Device type 01 (RHA levels L and
18、R) . 100 krad (Si) 2/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the sol
19、icitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-38534 - Hybrid Microcircuits, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard for Electronic Component Case Outlines. DEPARTMENT OF DEFEN
20、SE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia,
21、 PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtaine
22、d. _ 1/ Stresses above the absolute maximum ratings may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ These parts may be dose rate sensitive in a space enviroment and may demonstrate enhanced low dose rate effects. R
23、adiation end-point limits for the the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition C, tested at 9 rad(Si)/s. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING
24、SIZE A 5962-99556 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item performance requirements for device classes D, E, G, H, and K shall be in accordance with MIL-PRF-38534. Compliance wit
25、h MIL-PRF-38534 may include the performance of all tests herein or as designated in the device manufacturers Quality Management (QM) plan or as designated for the applicable device class. The manufacturer may eliminate, modify or optimize the tests and inspections herein, however the performance req
26、uirements as defined in MIL-PRF-38534 shall be met for the applicable device class. In addition, the modification in the QM plan shall not affect the form, fit, or function of the device for the applicable device class. 3.2 Design, construction, and physical dimensions. The design, construction, and
27、 physical dimensions shall be as specified in MIL-PRF-38534 and herein. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Radiation exposure circuit. The radi
28、ation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteris
29、tics are as specified in table I and shall apply over the full specified operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking of device(
30、s). Marking of device(s) shall be in accordance with MIL-PRF-38534. The device shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers vendor similar PIN may also be marked. 3.6 Data. In addition to the general performance requirements of MIL-PRF-38534, the manufacturer of
31、the device described herein shall maintain the electrical test data (variables format) from the initial quality conformance inspection group A lot sample, for each device type listed herein. Also, the data should include a summary of all parameters manually tested, and for those which, if any, are g
32、uaranteed. This data shall be maintained under document revision level control by the manufacturer and be made available to the preparing activity (DSCC-VA) upon request. 3.7 Certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to supply to this drawi
33、ng. The certificate of compliance (original copy) submitted to DSCC-VA shall affirm that the manufacturers product meets the performance requirements of MIL-PRF-38534 and herein. 3.8 Certificate of conformance. A certificate of conformance as required in MIL-PRF-38534 shall be provided with each lot
34、 of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99556 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE
35、 I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TC +125C VIN= 28 V dc 0.5 V, CL= 0 Group A subgroups Device type Limits Unit unless otherwise specified Min Max Output voltage +VOUT IOUT= 31.5 mA 1 01 +11.88 +12.12 V dc 2,3 +11.52 +12.48 L, R 1,2,3 01 +11.30 +12.70 -VOUT
36、 IOUT= 31.5 mA 1 01 -11.88 -12.12 2,3 -11.52 -12.48 L, R 1,2,3 01 -11.30 -12.70 Output current 3/ IOUT VIN= 16 V dc to 40V dc 1,2,3 01 100 mA L, R 1,2,3 01 100 VOUTripple voltage (VOUT) VRIPIOUT= 62.5 mA, B.W. = 10 kHz to 2 MHz 1 01 200 mVp-p 2,3 400 L, R 1,2,3 01 625 VOUTline regulation (+VOUT) (-V
37、OUT) VRLINEIOUT= 62.5 mA, VIN =16V dc to 40V dc 1 01 400 mV 2,3 700 L, R 1,2,3 01 812 1 01 400 2,3 700 L, R 1,2,3 01 812 VOUTload regulation (+VOUT) (-VOUT) VRLOADIOUT= 6.3 mA to 62.5 mA 1,2,3 01 700 mV L, R 1,2,3 01 900 1,2,3 01 700 L, R 1,2,3 01 900 See footnotes at end of table. Provided by IHSNo
38、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99556 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test S
39、ymbol Conditions 1/ 2/ -55C TC +125C VIN= 28 V dc 0.5 V, CL= 0 Group A subgroups Device type Limits Unit unless otherwise specified Min Max Input current IINIOUT= 0 A Inhibit (pin 7) = 0 1,2,3 01 5 mA L, R 1,2,3 01 17 IOUT= 0 A Inhibit (pin 7) = open 1 01 14 2,3 17 L, R 1,2,3 01 20 IINripple current
40、 IRIPIOUT= 62.5 mA, LIN = 6 H, B.W. = 10 kHz to 10 MHz 1 01 250 mAp-p 2,3 300 L,R 1,2,3 01 400 Efficiency Eff IOUT= 62.5 mA 1 01 80 % 2,3 01 69 L, R 1,2,3 01 67 Isolation ISO Input to output or input to case or output to case. 500 V dc, TC= +25C 1 01 100 M L, R 1 01 100 Short circuit power dissipati
41、on PDPD= PIN total POUT1,2,3 01 1.2 W L, R 1,2,3 01 1.5 Switching frequency FSIOUT= 62.5 mA 4,5,6 01 220 420 kHz L, R 4,5,6 01 220 450 VOUTstep load transient 4/ ( VOUT ) VTLOAD50% load to/from 100% load, balanced loads on each output 4,5,6 01 -600 +600 mV pk L, R 4,5,6 01 -700 +700 VOUTstep load tr
42、ansient recovery 4/ 5/ 6/ TTLOAD50% load to/from 100% load, balanced loads on each output 4,5,6 01 360 s L, R 4,5,6 01 600 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99556
43、DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ -55C TC +125C VIN= 28 V dc 0.5 V, CL= 0 Group A subgroups Device type Limits Unit unless otherwise specifi
44、ed Min Max VOUTstep line transient 6/ 7/ VTLINEInput step 16 V dc to/from 40 V dc, IOUT= 62.5 mA 4,5,6 01 -600 +600 mV pk L, R 4,5,6 01 -700 +700 VOUTstep line transient recovery 5/ 6/ 7/ TTLINEInput step 16 V dc to/from 40 V dc, IOUT= 62.5 mA 4,5,6 01 500 s L, R 4,5,6 01 800 Start up overshoot 6/ (
45、VOUT) VtonOSIOUT= 62.5 mA 4,5,6 01 500 mV pk VIN= 0 to 28 V dc L, R 4,5,6 01 800 Start up delay 8/ (VOUT) TonDIOUT= 62.5 mA 4,5,6 01 20 ms VIN= 0 to 28 V dc L, R 4,5,6 01 30 Load fault recovery 6/ (VOUT) TrLFIOUT= 62.5 mA 4,5,6 01 30 ms L,R 4,5,6 01 40 Capacitive load 6/ 9/ (both outputs) CL No effe
46、ct on dc performance, TC= +25C 4 01 100 F L, R 4 01 100 1/ Post irradiation testing shall be in accordance with 4.3.5 herein. 2/ These parts may be dose rate sensitive in a space environment and may demostrate enhanced low dose rate effects. Radiation end-point limits for the noted parameters are gu
47、aranteed only for the conditions as specified in MIL-STD-883, method 1019, condition C, tested at 9 rads(Si)/s. 3/ The total output power available is 80 percent from either output up to 1.2 watts, providing the opposite output is simultaneously carrying 20 percent of the total output power. Each ou
48、tput must carry a minimum of 10 percent of full load in order to maintain regulation. 4/ Load step transition time greater than 10 s. 5/ Recovery time is measured from the initiation of the transient until VOUThas returned to within 1 percent of VOUT final value. 6/ Parameter shall be tested as part of device characterization and after design and process changes. Thereafter, parameters shall be guaranteed to the
