1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Change to the delta limit in table IIB for the input leakage current. Update boilerplate. - rrp 01-05-11 R. MONNIN B Changes to the limits for the digital input voltage and analog input voltage ratings in section 1.3. Delete dose rate upset test
2、in section 1.5. Remove dose rate upset testing paragraph in section 4. - rrp 02-08-29 R. MONNIN C Delete the ID(OFF)over-voltage test as specified under TABLE I. - ro 05-03-03 R. MONNIN D Make change to the die size as specified under APPENDIX A. - ro 06-02-13 R. MONNIN E Make change to the continuo
3、us current description as specified under 1.3. - ro 07-01-29 J. RODENBECK F Add device type 02. Make changes to paragraphs 1.5, 3.2.5, and 4.4.4.2. Delete figure 4 radiation exposure circuit. Delete SEP effective let no upset, Dose rate latchup testing, Dose rate burnout, Single event phenomena, and
4、 additional information paragraphs. Delete device class M requirements. - ro 13-05-28 C. SAFFLE G Add new footnote 4/ to the Source OFF leakage current IS(OFF)test as specified in table I. Delete note 2 from figure 1 terminal connections. - ro 13-11-25 C. SAFFLE REV SHEET REV G G G G SHEET 15 16 17
5、18 REV STATUS REV G G G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RAJESH PITHADIA DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND
6、 AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, RADIATION HARDENED, CMOS HIGH SPEED QUAD SPST ANALOG SWITCH, MONOLITHIC SILICON DRAWING APPROVAL DATE 00-05-25 AMSC N/A REVISION LEVEL G SIZE A CAGE CODE 67268 5962-99618 SHEET 1 OF 18
7、DSCC FORM 2233 APR 97 5962-E035-14 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99618 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This
8、 drawing documents three product assurance class levels consisting of high reliability (device class Q ), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Par
9、t or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the
10、intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 F 99618 01 V E C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA desig
11、nator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Cir
12、cuit function 01 HS-201HSRH Radiation hardened, DI, high speed quad SPST CMOS analog switch 02 HS-201HSEH Radiation hardened, DI, high speed quad SPST CMOS analog switch 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows:
13、Device class Device requirements documentation Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as design
14、ated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E CDIP2-T16 16 Dual-in-line X CDFP4-F16 16 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V. Provided by IHSNot for ResaleNo reproduction or n
15、etworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99618 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ Positive supply voltage (V+ to ground) . +18 V Negative supply voltage (
16、V- to ground) -18 V Digital input voltage (VIN) . 17 V Analog input voltage, one switch (VS) 17 V Maximum power dissipation (PD) . 750 mW Maximum junction temperature (TJ) . +175C Lead temperature (soldering, 10 seconds) . +275C Thermal resistance, junction-to-case (JC) Case outlines E and X 12C/W T
17、hermal resistance, junction-to-ambient (JA): Case outline E . 80C/W Case outline X . 95C/W Storage temperature range . -65C to +150C Peak current, S or D (pulsed at 1 ms, 10 percent duty cycle max) . 50 mA Continuous current, any terminal 25 mA 1.4 Recommended operating conditions. Positive supply v
18、oltage (V+) +15 V dc Negative supply voltage (V-) . -15 V dc Minimum high level input voltage (VIH) . 2.4 V dc Maximum low level input voltage (VIL) 0.8 V dc Ambient operating temperature range (TA) . -55C to +125C Ground (GND) . 0 V dc 1.5 Radiation features: Maximum total dose available (dose rate
19、 = 50 300 rads(Si)/s): Device type 01: Device classes Q or V 300 krads(Si) 3/ Device class T 100 krads(Si) 3/ Device type 02 . 300 krads(Si) 4/ Maximum total dose available (dose rate 0.01 rad(Si)/s): Device type 02 . 50 krads(Si) 4/ Single event latch-up (SEL) . No latch up 5/ _ 1/ Stresses above t
20、he absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise specified, all voltages are referenced to ground. 3/ Device type 01 may be dose rate sensitive in a space environment and
21、may demonstrate enhanced low dose rate effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si) for class V or Q and 100 krads(Si) for class T. 4/ Device type
22、 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 5/ Devices use dielectrically isolated (DI) technolo
23、gy and latch up is physically not possible. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99618 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE D
24、OCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF
25、DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 -
26、List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence.
27、 In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements.
28、 The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1
29、.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V. 3.2.1 Case outlines. T
30、he case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Functional diagram. The functional diagram shall be as specified on figure 2. 3.2.4 Switching waveforms. The switching waveforms shall be as specif
31、ied on figure 3. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradia
32、tion parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements
33、shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99618 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3
34、990 REVISION LEVEL G SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C V+ = +15 V dc, Group A subgroups Device type Limits 2/ Unit V- = -15 V dc unless otherwise specified Min Max Analog signal range VSTA= +25C 3/ 4 01, 02 15 V ON
35、resistance RDS(ON)VS= 10 V, ID= 1 mA, 1 01, 02 50 VIN= 0.8 V 2,3 75 M,D,P,L,R,F 1 50 Source OFF leakage current IS(OFF)VS= 14 V, 4/ 1 01, 02 10 nA VD= 14 V, VIN= 2.4 V 2, 3 100 M,D,P,L,R,F 1 10 Drain OFF leakage current ID(OFF)VS= 14 V, VD= 14 V, 1 01, 02 10 nA VIN= 2.4 V 2, 3 100 M,D,P,L,R,F 1 10 C
36、hannel ON leakage current ID(ON)VD= VS= 14 V, 1 01, 02 10 nA VIN= 0.8 V 2, 3 100 M,D,P,L,R,F 1 10 Input leakage current (low) IILVINunder test = 0.8 V, all other VIN= 4.0 V 1,2,3 01, 02 500 A M,D,P,L,R,F 1 500 Input leakage current (high) IIHVINunder test = 4.0 V, all other VIN= 0.8 V 1,2,3 01, 02 4
37、0 A M,D,P,L,R,F 1 40 Positive supply current I+ VIN= 2.4 V or VIN= 0.8 V for all switches 1,2,3 01, 02 12 mA M,D,P,L,R,F 1 12 Negative supply current I- VIN= 2.4 V or VIN= 0.8 V for all switches 1,2,3 01, 02 12 mA M,D,P,L,R,F 1 12 Input threshold (low) VALVS= -10 V input, VD= 1 mA load 1,2,3 01, 02
38、0.8 V M,D,P,L,R,F 1 0.8 Input threshold (high) VAHVS= -10 V input, VD= 1 mA load 1,2,3 01, 02 2.4 V M,D,P,L,R,F 1 2.4 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99618 DLA L
39、AND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C V+ = +15 V dc, Group A subgroups Device type Limits 2/ Unit V- = -15 V dc unless otherwise specified Min Max
40、Switch on time tONRL= 1 k, CL= 35 pF, VS= 10 V, VIH= +3 V, 9 01, 02 110 ns VIL= 0 V, see figure 3 10,11 130 M,D,P,L,R,F 9 130 Switch off time tOFFRL= 1 k, CL= 35 pF, VS= 10 V, VIH= +3 V, 9 01, 02 80 ns VIL= 0 V, see figure 3 10,11 110 M,D,P,L,R,F 9 80 Power Off (V+ tied to V-) Leakage current into t
41、he source terminal of an off switch with overvoltage applied. IS(OFF) over-voltage VS= 17 V, VD= 0 V, 1 01, 02 -1.0 1.0 A unused inputs tied to ground 2,3 -5.0 5.0 M,D,P,L,R,F 1 -5.0 5.0 1/ RHA device type 01 supplied to this drawing will meet all levels M, D, P, L, R and F of irradiation for device
42、 classes Q and V, and will meet all levels M, D, P, L and R of irradiation for device class T. However, device classes Q and V are only tested at the “F” level, and device class T is only tested at the “R” level in accordance with MIL-STD-883 method 1019 condition A (see 1.5 herein). RHA device type
43、 02 supplied to this drawing will meet all levels M, D, P, L, R, and F of irradiation for condition A and levels M, D, P, and L for condition D. However, device type 02 is only tested at the “F” level in accordance with MIL-STD-883, method 1019, condition A and tested at the “L” level in accordance
44、with MIL-STD-883, method 1019, condition D (see 1.5 herein). Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ The limiting terms “min” (minimum) and “max” (maximum) shall be c
45、onsidered to apply to magnitudes only. Negative current shall be defined as conventional current flow out of a device terminal. 3/ These parameters may not be tested, but shall be guaranteed to the limits specified in table I herein. 4/ There is no drain to source isolation. Provided by IHSNot for R
46、esaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99618 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 7 DSCC FORM 2234 APR 97 Device types 01 and 02 Case outlines E and X Terminal number Terminal symbol 1 IN12
47、 D13 S14 V- 5 GND 6 S47 D48 IN49 IN310 D311 S312 NC 13 V+ 14 S215 D216 IN2NOTE: 1. NC = No connection. FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99618 DLA LAND AND MARITI
48、ME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 8 DSCC FORM 2234 APR 97 FIGURE 2. Functional diagram. Note: Rise time and fall time are less than 20 ns. FIGURE 3. Switching waveforms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-99618 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 9 DSCC FORM 2234 APR 97 3.5 Marking. The part shal
