1、BRITISH STANDARD BS EN 60747-5-1:2001 Incorporating Amendments Nos. 1 (to BS IEC 60747-5-1:1997 renumbering the BS IEC as BS EN 60747-5-1:2001) and 2 and Corrigendum No. 1 Discrete semiconductor devices and integrated circuits Part 5-1: Optoelectronic devices General The European Standard EN 60747-5
2、-1:2001, and the incorporation of amendment A1:2002 and A2:2002, has the status of a British Standard ICS 31.260 BS EN 60747-5-1:2001 This British Standard, having been prepared under the direction of the Electrotechnical Sector Board, was published under the authority of the Standards Board and com
3、es into effect on 15 January 1998 BSI 16 January 2003 ISBN 0 580 29146 4 National foreword This British Standard is the official English language version of EN 60747-5-1:2001, including amendments A1:2002 and A2:2002, published by the European Committee for Electrotechnical Standardization (CENELEC)
4、. It is identical with IEC 60747-5-1:1997, including amendments 1:2001 and 2:2002, published by the International Electrotechnical Commission (IEC). The start and finish of text introduced or altered by amendment is indicated in the text by tags . Tags indicating changes to IEC text carry the number
5、 of the IEC amendment. For example, text altered by IEC amendment 1 is indicated by . From 1 January 1997, all IEC publications have the number 60000 added to the old number. For instance, IEC 27-1 has been renumbered as IEC 60027-1. For a period of time during the change over from one numbering sys
6、tem to the other, publications may contain identifiers from both systems. Cross-references The British Standards which implement international publications referred to in this document may be found in the BSI Catalogue under the section entitled “International Standards Correspondence Index”, or by
7、using the “Search” facility of the BSI Electronic Catalogue or of British Standards Online. This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. Compliance with a British Standard does not of itself confer immunit
8、y from legal obligations. Summary of pages This document comprises a front cover, an inside front cover, the EN title page, pages 2 to 28, an inside back cover and a back cover. The BSI copyright notice displayed in this document indicates when the document was last issued. Amendments issued since p
9、ublication Amd. No. Date Comments 13341 24 December 2001 Implementation of the European Standard. Also, see national foreword. 13793 Corrigendum No. 1 17 July 2002 Implementation of CENELEC amendment A1 14097 16 January 2003 See national forewordEUROPEAN STANDARD NORME EUROPENNE EUROPISHCE NORM EN 6
10、0747-5-1 July 2001 + A1 February 2002 + A2 May 2002 ICS 31.260 English version Discrete semiconductor devices and integrated circuits Part 5-1: Optoelectronic devices General (includes amendments A1:2002 + A2:2002) (IEC 60747-5-1:1997 + A1:2001 + A2:2002) Dispositifs discrets semiconducteurs et circ
11、uits intgrs Partie 5-1: Dispositifs optolectroniques Gnralitis (inclut les amendements A1:2002 + A2:2002) (CEI 60747-5-1:1997 + A1:2001 + A2:2002) Einzel-Halbleiterbauelemete und integrierte Schaltungen Teil 5-1: Optoelektronische Bauelemente Allgemeines (enthlt nderungen A1:2002 + A2:2002) (IEC 607
12、47-5-1:1997 + A1:2001 + A2:2002) This European Standard was approved by CENELEC on 2000-12-01. Amendment A1 was approved by CENELEC on 2002-02-01. Amendment A2 was approved by CENELEC on 2002-05-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the con
13、ditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CEN member. This European Standard exists in thre
14、e official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnica
15、l committees of Austria, Belgium, Czech Republic, Denmark, Finland, France, Germany, Greece, Iceland, Italy, Luxembourg, Netherlands, Norway, Portugal, Spain, Sweden, Switzerland and United Kingdom. CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electr
16、otechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B-1050 Brussels 2001 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60747-5-1:2001 + A1:2002 + A2:2002 EEN 60747-5-1:2001 BSI 16 J
17、anuary 2003 2 Foreword The text of the International Standard IEC 60747-5-1:1997, prepared by SC 47C, Flat panel display devices, of IEC TC 47, Semiconductor devices, was submitted to the Unique Acceptance Procedure and was approved by CENELEC as EN 60747-5-1 on 2000-12-01 without any modification.
18、This standard should be read jointly with IEC 60747-1, EN 62007-1 and EN 62007-2. The following dates were fixed: Annexes designated “normative” are part of the body of the standard. Annexes designated “informative” are given for information only. In this standard, Annex ZA is normative and Annex A
19、is informative. Annex ZA has been added by CENELEC. Foreword to amendment A1 The text of amendment 1:2001 to the International Standard IEC 60747-5-1:1997, prepared by SC 47E, Discrete semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to the Unique Acceptance Procedure and wa
20、s approved by CENELEC as amendment A1 to EN 60747-5-1:2001 on 2002-02-01 without any modification. The following dates were fixed: Foreword to amendment A2 The text of document 47E/208/FDIS, future amendment 2 to IEC 60747-5-1:1997, prepared by SC 47E, Discrete semiconductor devices, of IEC TC 47, S
21、emiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as amendment A2 to EN 60747-5-1:2001 on 2002-05-01. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or
22、 by endorsement (dop) 2002-01-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2004-01-01 latest date by which the amendment has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2003-02-01 la
23、test date by which the national standards conflicting with the amendment have to be withdrawn (dow) 2005-02-01 latest date by which the amendment has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2003-02-01 latest date by which the natio
24、nal standards conflicting with the amendment have to be withdrawn (dow) 2005-05-01EN 60747-5-1:2001 BSI 16 January 2003 3 Contents Page Foreword 2 Introduction 4 1S c o p e 4 2 Normative references 4 3 Physical concepts 4 3.1 (Electromagnetic) radiation 4 3.2 Optical radiation 4 3.3 Visible radiatio
25、n 4 3.4 Infrared radiation 4 3.5 Ultraviolet radiation 4 3.6 Light 4 3.7 Photoelectric effect 4 4 Types of devices 5 4.1 Semiconductor optoelectronic device 5 4.2 Semiconductor photoemitter 5 4.3 Semiconductor laser 5 4.4 Light-emitting diode (LED) 5 4.5 Infrared-emitting diode (IRED) 5 4.6 (Semicon
26、ductor) photosensitive device 5 4.7 (Semiconductor) photoelectric detector 5 4.8 (Semiconductor) photoresistor, photoconductive cell 5 4.9 Photoelement, photovoltaic cell 5 4.10 Photodiode 5 4.11 Phototransistor 5 4.12 Photothyristor 5 4.13 Photocoupler, optocoupler 5 5G e n e r a l t e r m s 6 5.1
27、Optical axis 6 5.2 Optical port (of a semiconductor optoelectronic device) 6 5.3 (Optical) cladding 10 6 Terms related to ratings and characteristics 10 6.1 General 10 6.2 Photoemitters 11 6.3 Photosensitive devices 18 6.4 Photocouplers, optocouplers 21 Annex A (informative) Cross references index 2
28、7 Annex ZA (normative) Normative references to international publications with their corresponding European publications 28 Page Figure 1a Device with bare fibre pigtail 7 Figure 1b Device with fibre pigtail connector attached 7 Figure 2a Device with window, but without lens 8 Figure 2b Detector wit
29、h window, but without lens (chip referenced) 8 Figure 2c Detector with lens 9 Figure 2d IRED with optical port that is not located on the output window of the package 9 Figure 3 Non-packaged devices (emitter or detector) without pigtail 10 Figure 4 Switching times 11 Figure 5 Threshold current of a
30、laser diode 13 Figure 6 Radiation diagram and related characteristics 14 Figure 7 Spectral characteristics oflight-emitting diodes and infrared-emitting diodes 15 Figure 8 Spectral characteristics of laser diodes and laser-diode modules 15 Figure 9 Side-mode suppression ratio 17 Figure 10 Emission s
31、ource of a laser diode 18 Figure 11 Fibre-input sensitivity S FD 19 Figure 12 Sensitivity diagram and related characteristics 20 Figure 13 Multiplication factor of an avalanche diode 21 Figure 14 Time intervals of the test voltage 24EN 60747-5-1:2001 4 BSI 16 January 2003 Introduction This part of I
32、EC 60747 provides basic information on semiconductors: terminology; letter symbols; essential ratings and characteristics; measuring methods; acceptance and reliability. 1 Scope This Part of IEC 60747 deals with the terminology relating to the semiconductor optoelectronic devices. 2 Normative refere
33、nces The following normative documents contain provisions which, through reference in this text, constitute provisions of this part of IEC 60747. At the time of publication, the editions indicated were valid. All normative documents are subject to revision, and parties to agreements based on this pa
34、rt of IEC 747 are encouraged to investigate the possibility of applying the most recent editions of the normative documents indicated below. Members of IEC and ISO maintain registers of currently valid International Standards. IEC 60050(731):1991, International Electrotechnical Vocabulary (IEV) Chap
35、ter 731: Optical fibre communication. IEC 60050(845):1987, International Electrotechnical Vocabulary (IEV) Chapter 845: Lighting. IEC 60664-1:1992, Insulation coordination for equipment within low-voltage systems Part 1: Principles, requirements and tests. 3 Physical concepts 3.1 (Electromagnetic) r
36、adiation (IEV 845-01-01) 1) Emission or transfer of energy in the form of electromagnetic waves with the associated photons. 2) These electromagnetic waves or these photons. 3.2 Optical radiation (IEV 845-01-02) Electromagnetic radiation of wavelengths lying between the region of transition to X-ray
37、s ( 1n m ) a n d t h e region of transition to radio waves ( 1n m ) . 3.3 Visible radiation (IEV 845-01-03) Any optical radiation capable of causing a visual sensation directly. NOTE There are no precise limits for the spectral range of visible radiation since they depend upon the amount of radiant
38、power available and the responsivity of the observer. The lower limit is generally taken between 360 nm and 400 nm and the upper limit between 760 nm and 830 nm. 3.4 Infrared radiation (IEV 845-01-04, specialized) Optical radiation for which the wavelengths are longer than those for visible radiatio
39、n. 3.5 Ultraviolet radiation (IEV 845-01-05, specialized) Optical radiation for which the wavelengths are shorter than those for visible radiation. 3.6 Light (IEV 845-01-06, without note 2 which is not relevant) 3.6.1 Perceived light (see IEV 845-02-17) 3.6.2 Visible radiation (see IEV 845-01-03) NO
40、TE Concept 2 is sometimes used for optical radiation extending outside the visible range, but this usage is not recommended. 3.7 Photoelectric effect (from IEV 845-05-33: photoelectric detector) Interaction between optical radiation and matter resulting in the absorption of photons and the consequen
41、t generation of mobile charge carriers, thereby generating an electric potential or current, or a change in electrical resistance, excluding electrical phenomena caused by temperature changes.EN 60747-5-1:2001 BSI 16 January 2003 5 4 Types of devices 4.1 Semiconductor optoelectronic device 1) A semi
42、conductor device that emits or detects or that is responsive to coherent or non-coherent optical radiation. 2) A semiconductor device that utilizes such radiation for its internal purposes. 4.2 Semiconductor photoemitter A semiconductor optoelectronic device that directly converts electric energy in
43、to optical radiant energy. 4.3 Semiconductor laser 4.3.1 (Semiconductor) laser diode A semiconductor diode that emits coherent optical radiation through stimulated emission resulting from the recombination of free electrons and holes when excited by an electric current that exceeds the threshold cur
44、rent of the diode. NOTE The laser diode is mounted on a submount or in a package with or without coupling means (e.g. lens, pigtail). 4.3.2 Laser-diode module A module containing, together with the laser diode, means for an automatic optical and/or thermal stabilization of the radiant output power.
45、4.4 Light-emitting diode (LED) A semiconductor diode, other than a semiconductor laser, capable of emitting visible radiation when excited by an electric current. 4.5 Infrared-emitting diode (IRED) A semiconductor diode other than a semiconductor laser capable of emitting infrared radiation when exc
46、ited by an electric current. 4.6 (Semiconductor) photosensitive device A semiconductor device that utilizes the photoelectric effect for detection of optical radiation. 4.7 (Semiconductor) photoelectric detector A semiconductor device that utilizes the photoelectric effect for detection of optical r
47、adiation. 4.8 (Semiconductor) photoresistor, photoconductive cell (IEV 845-05-37, specialized) A semiconductor photoelectric detector that utilizes the change of electric conductivity produced by the absorption of optical radiation. 4.9 Photoelement, photovoltaic cell (IEV 845-05-38) A photoelectric
48、 detector that utilizes the electromotive force produced by the absorption of optical radiation. 4.10 Photodiode (IEV 845-05-39) A photoelectric detector in which a photocurrent is generated by absorption of optical radiation in the neighbourhood of a PN junction between the semiconductors, or of a
49、junction between a semiconductor and a metal. 4.11 Phototransistor A transistor in which the current produced by the photoelectric effect in the neighbourhood of the emitter-base junction acts as base current, which is amplified. 4.12 Photothyristor A thyristor that is designed to be triggered by optical radiation. 4.13 Photocoupler, optocoupler A semiconductor optoelectronic de
