1、BRITISH STANDARD BS EN 60747-5-3:2001 Incorporating Amendments Nos. 1 and 2 BS IEC 60747-5-3:1997 (renumbers the BS IEC as BS EN 60747-5-3:2001) Discrete semiconductor devices and integrated circuits Part 5-3: Optoelectronic devices Measuring methods The European Standard EN 60747-5-3:2001, with the
2、 incorporation of amendment A1:2000, has the status of a British Standard ICS 31.260 BS EN 60747-5-3:2001 This British Standard, having been prepared under the direction of the Electrotechnical Sector Board, was published under the authority of the Standards Board and comes into effect on 15 January
3、 1998 BSI 20 January 2003 ISBN 0 580 29145 6 National foreword This British Standard is the official English language version of EN 60747-5-3:2001, including amendment A1:2002. It is identical with IEC 60747-5-3:1997, including amendment 1:2002. The start and finish of text introduced or altered by
4、amendment is indicated in the text by tags . Tags indicating changes to IEC text carry the number of the IEC amendment. For example, text altered by IEC amendment is indicated by . The UK participation in its preparation was entrusted by Technical Committee EPL/47, Semiconductors, to Subcommittee EP
5、L/47/3, Performance of optoelectronic semiconductor devices and liquid crystal displays, which has the responsibility to: A list of organizations represented on this subcommittee can be obtained on request to its secretary. Cross-references The British Standards which implement international or Euro
6、pean publications referred to in this document may be found in the BSI Catalogue under the section entitled “International Standards Correspondence Index”, or by using the “search” facility of the BSI Electronic Catalogue or of British Standards Online. This publication does not purport to include a
7、ll the necessary provisions of a contract. Users are responsible for its correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. aid enquirers to understand the text; present to the responsible international/European committee any enquiries
8、on the interpretation, or proposals for change, and keep the UK interests informed; monitor related international and European developments and promulgate them in the UK. Summary of pages This document comprises a front cover, an inside front cover, the EN title page, the EN foreword page, the IEC t
9、itle page, pages ii to iv, pages 1 to 39 and a back cover. The BSI copyright notice displayed in this document indicates when the document was last issued. Amendments issued since publication Amd. No. Date Comments 13434 08 January 2002 Implementation of the European Standard 14084 20 January 2003 S
10、ee national forewordEUROPEAN STANDARD NORME EUROPENNE EUROPISCHE NORM EN 60747-5-3 July 2001 + A1 May 2002 ICS 31.260 English version Discrete semiconductor devices and integrated circuits Part 5-3: Optoelectronic devices Measuring methods (includes amendment A1:2002) (IEC 60747-5-3:1997 + A1:2002)
11、Dispositifs discrets semiconducteurs et circuits intgrs Partie 5-3: Dispositifs optolectroniques Mthodes de mesure (inclut lamendement A1:2002) (CEI 60747-5-3:1997 + A1:2002) Einzel-Halbleiterbauelemente und integrierte Schaltungen Teil 5-3: Optoelektronische Bauelemente Meverfahren (enthlt nderung
12、A1:2002) (IEC 60747-5-3:1997 + A1:2002) This European Standard was approved by CENELEC on 2000-12-01. Amendment A1 was approved by CENELEC on 2002-05-01. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the
13、 status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or to any CENELEC member. This European Standard exists in three official version (English, French, Germ
14、an). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Re
15、public, Denmark, Finland, France, Germany, Greece, Iceland, Ireland, Italy, Luxembourg, Netherlands, Norway, Portugal, Spain, Sweden, Switzerland and United Kingdom. CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr
16、 Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B-1050 Brussels 2001 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC members. Ref. No. EN 60747-5-3:2001 + A1:2002 EEN 60747-5-3:2001 BSI 20 January 2003 Foreword The text of the Intern
17、ational Standard IEC 60747-5-3:1997, prepared by SC 47C, Flat panel display devices, of IEC TC 47, Semiconductor devices, was submitted to the Unique Acceptance Procedure and was approved by CENELEC as EN 60747-5-3 on 2000-12-01 without any modification. This standard should be read jointly with IEC
18、 60747-1, EN 62007-1 and EN 62007-2. The following dates were fixed: Annexes designated “normative” are part of the body of the standard. Annexes designated “informative” are given for information only. In this standard, Annex ZA is normative and Annex A is informative. Annex ZA has been added by CE
19、NELEC. Foreword to amendment A1 The text of document 47E/210/FDIS, future amendment 1 to IEC 60747-5-3:1997, prepared by SC 47E, Discrete semiconductor devices, of IEC TC 47, Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as amendment A1 to EN 60747
20、-5-3:2001 on 2002-05-01. The following dates were fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2002-01-01 latest date by which the national standards conflicting with the EN have to be withdrawn (d
21、ow) 2004-01-01 latest date by which the amendment has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2003-02-01 latest date by which the national standards conflicting with the amendment have to be withdrawn (dow) 2005-05-01 2002-03Incorp
22、orating amendment 1EN 60747-5-3:2001 ii BSI 20 January 2003 Contents Page Foreword iv 1S c o p e 1 2 Normative references 1 3 Measuring methods for photoemitters 1 3.1 Luminous intensity of light-emitting diodes (I v )1 3.2 Radiant intensity of infrared-emitting diodes (I e )2 3.3 Peak-emission wave
23、length ( p ), spectral radiation bandwidth ( ), and number of longitudinal modes (n m )4 3.4 Emission source length and width and astigmatism of a laser diode without pigtail 6 3.5 Half-intensity angle and misalignment angle of a photoemitter 8 4 Measuring methods for photosensitive devices 10 4.1 R
24、everse current under optical radiation of photodiodes including devices with or without pigtails (I R(H)or I R(e) ) and collector current under optical radiation of phototransistors (I C(H)or I C(e) )1 0 4.2 Dark current for photodiodes I Rand dark currents for phototransistors I CEO , I ECO , I EBO
25、 12 4.3 Collector-emitter saturation voltage V CE(sat)of phototransistors 13 5 Measuring methods for photocouplers 14 5.1 Current transfer ratio (h F(ctr) )1 4 5.2 Input-to-output capacitance (C io )1 6 5.3 Isolation resistance between input and output (r IO )1 7 5.4 Isolation test 18 5.5 Partial di
26、scharges of photocouplers 19 5.6 Collector-emitter saturation voltage V CE(sat)of a photocoupler 23 5.7 Switching times t on , t offof a photocoupler 25 5.8 Peak off-state current (I DRM )2 7 5.9 Peak on-state voltage (V TM )2 8 5.10 DC off-state current (I BD )3 0 5.11 DC on-state voltage (V T )3 1
27、 5.12 Holding current (I H )3 1 5.13 Critical rate of rise of off-state voltage (dV/dt)3 2 5.14 Trigger input current (I FT )3 5 5.15 Testing methods of electrical rating for phototriac coupler 36 Annex A (informative) Cross references index 38 Figure 1 1 Figure 2 3 Figure 3 Basic circuit 4 Figure 4
28、 Radiant power as function of wavelength 5 Figure 5 6 Figure 6 6 Figure 7 8 Figure 8 8 Figure 9 9 Figure 10 10 Figure 11a Phototransistor 11EN 60747-5-3:2001 BSI 20 January 2003 iii Page Figure 11b Photodiode 11 Figure 12 12 Figure 13 13 Figure 14 Basic circuit 14 Figure 15 Basic circuit 16 Figure 1
29、6 Basic circuit 17 Figure 17 18 Figure 18 Partial discharge test circuit 19 Figure 19 Connections for the calibration of the complete test arrangement 20 Figure 20 Time interval versus test voltage diagram 21 Figure 21 Time interval versus test voltage diagram 22 Figure 22 23 Figure 23 24 Figure 24
30、25 Figure 25 26 Figure 26 Measurement circuit for peak off-state current 27 Figure 27 Waveforms of the peak off-state voltage and current 28 Figure 28 Measurement circuit for peak on-state voltage 29 Figure 29 Waveforms of the peak on-state voltage and current 30 Figure 30 Measurement circuit for d.
31、c. off-state current 30 Figure 31 Measurement circuit for d.c. on-state voltage 31 Figure 32 Measurement circuit for holding current 32 Figure 33 Measurement circuit for critical rate of rise of off-state voltage 33 Figure 34 The exponential waveform of the off-voltage (V D )3 4 Figure 35 The linear
32、 waveform of the off-voltage (V D )3 4 Figure 36 Measurement circuit for the trigger input current 35 Figure 37 Output terminal voltage versus input foreword current 35EN 60747-5-3:2001 iv BSI 20 January 2003 Foreword 1) The IEC (International Electrotechnical Commission) is a worldwide organization
33、 for standardization comprising all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, the
34、 IEC publishes International Standards. Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental organizations liaising with the IEC also particip
35、ate in this preparation. The IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two or- ganizations. 2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possi
36、ble, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested National Committees. 3) The documents produced have the form of recommendations for international use and are published in the form of standards, technical report
37、s or guides and they are accepted by the National Committees in that sense. 4) In order to promote international unification, IEC National Committees undertake to apply IEC International Standards transparently to the maximum extent possible in their national and regional standards. Any divergence b
38、etween the IEC Standard and the corresponding national or regional standard shall be clearly indicated in the latter. 5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any equipment declared to be in conformity with one of its standards. 6) Atte
39、ntion is drawn to the possibility that some of the elements of this International Standard may be the subject of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 60747-5-3 has been prepared by subcommittee 47C: Optoelectro
40、nic, display and imaging devices, of IEC technical committee 47: Semiconductor devices. This first edition replaces partially the second edition of IEC 60747-5 (1992) and constitutes a technical revision (see also Annex A: Cross references index). It should be read jointly with IEC 60747-1, IEC 6200
41、7-1 and IEC 62007-2. The text of this standard is based partially on IEC 60747-5 (1992) and partially on the following documents: Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. Annex A is for information only. FDIS
42、Report on voting 47C/173/FDIS 47C/186/RVDEN 60747-5-3:2001 BSI 20 January 2003 1 1 Scope This part of IEC 60747 describes the measuring methods applicable to the optoelectronic devices which are not intended to be used in the fibre optic systems or subsystems. 2 Normative references The following no
43、rmative documents contain provisions which, through reference in this text, constitute provisions of this part of IEC 60747. At the time of publication, the editions indicated were valid. All normative documents are subject to revision, and parties to agreements based on this part of IEC 60747 are e
44、ncouraged to investigate the possibility of applying the most recent editions of the normative documents indicated below. Members of IEC and ISO maintain registers of currently valid International Standards. IEC 60068-1:1988, Environmental testing Part 1: General and guidance. IEC 60270:1981, Partia
45、l discharge measurements. 3 Measuring methods for photoemitters 3.1 Luminous intensity of light-emitting diodes (I v ) a) Purpose To measure the luminous intensity of semiconductor light-emitting diodes. The method can be applied to three possible measurement variants: Variant 1 Rotation of the diod
46、e around its mechanical axis for an accurate location of the minimum and/or maximum value. Variant 2 Alignment of the diode optical axis with that of the optical bench. Variant 3 Positioning according to a reference corresponding to the type of the diode envelope and allowing a reproducible mechanic
47、al orientation. b) Circuit diagram Figure 1EN 60747-5-3:2001 2 BSI 20 January 2003 c) Circuit description and requirements The spectral sensitivity of the photometer shall be adjusted to the CIE (International Commission on Illumination) standard observers curve in the wavelength region of the light
48、 emitted by the diode. The photometer shall be calibrated in candelas at the distance d, with diaphragm D 1in place. The distance d shall be such that the solid angle viewed by the light source at the diaphragm D 1(= A/d 2 ) is less than 0,01 sr. For pulse measurements, the current generator should
49、provide current pulses of the required amplitude, duration and repetition rate. The photodetector should have a rise time sufficiently small in comparison with the pulse duration; it should be a peak-reading instrument. d) Measurement procedure The diode being measured is positioned according to the variant chosen. The specified current is applied and the luminous intensity is measured on the
