1、BRITISH STANDARDBS EN60749-27:2006Semiconductor devices Mechanical and climatic test methods Part 27: Electrostatic discharge (ESD) sensitivity testing Machine model (MM)The European Standard EN 60749-27:2006 has the status of a British StandardICS 31.080.01 BS EN +A1:2012BS EN 60749-27:2006This Bri
2、tish Standard was published under the authority of the Standards Policy and Strategy Committeeon 29 September 2006 BSI 2006ISBN 0 580 49296 6National forewordThis British Standard was published byBSI. It is the UK implementation of EN 60749-27:2006. It is identical with IEC 60749-27:2006. It partial
3、ly supersedes BS EN 60749:1999. This will be withdrawn when the last part inthe series is published.The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors.A list of organizations represented on EPL/47 can be obtained on request to its secretary.This publi
4、cation does not purport to include all the necessary provisionsof a contract. Users are responsible for its correct application.Compliance with a British Standard cannot confer immunity from legal obligations.Amendments issued since publicationAmd. No. Date CommentsThis British Standard was publishe
5、d under the authority of t e tandards olic d Strategy itteeon ber 2006 BSI 20060 0 6 6is iti li . It is t l io f - : . It is ti it 7: It tially 99. ll e e st t es is l .e p tici tion its p s to l ttee , .li t of i i r d 7 t to its y.is i ti ot t to all i ion f a . l f i or t icati .al tiA list of or
6、ganizations represented on this committee can be obtained on request to its secretary.BS EN 60749-27:2006+A1:2012ISBN 978 0 580 76608 4Amendments/corrigenda issued since publicationDate Comments31 January 2013 Implementation of IEC amendment 1:2012 with CENELEC endorsement A1:2012This British Standa
7、rd was published under the authority of the Standards Policy and Strategy Committee on 29 September 2006 The British Standards Institution 2013. Published by BSI Standards Limited 2013National forewordThis British Standard is the UK implementation of EN 60749-27:2006+A1:2012. It is identical to IEC
8、60749-27:2006 incorporating amendment 1:2012. It supersedes BS EN 60749-27:2006, which is withdrawn.The start and finish of text introduced or altered by amendment is indicated in the text by tags. Tags indicating changes to IEC text carry the number of the IEC amendment. For example, text altered b
9、y IEC amendment 1 is indicated by .EUROPEAN STANDARD EN 60749-27NORME EUROPENNE EUROPISCHE NORM August 2006 CENELEC European Committee for Electrotechnical StandardizationComit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat:rue de Stass
10、art35, B - 1050 Brussels 2006 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELECmembers.Ref. No. EN 60749-27:2006 EICS 31.080.01 English version Semiconductor devices - Mechanical and climatictest methods Part 27: Electrostatic discharge (ESD) sensitivit
11、y testing - Machine model (MM)(IEC 60749-27:2006)Dispositifs semiconducteurs -Mthodes dessaismcaniques et climatiquesPartie 27: Essai de sensibilit auxdcharges lectrostatiques (DES) -Modle de machine (MM)(CEI 60749-27:2006)Halbleiterbauelemente - Mechanische und klimatische PrfverfahrenTeil 27:Prfun
12、g der Empfindlichkeitgegen elektrostatische Entladungen(ESD) - Machine Model (MM) (IEC 60749-27:2006)This European Standard was approved by CENELEC on 2006-08-01. CENELEC members are bound to complywith the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Stan
13、dard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained onapplication to the Central Secretariat or to any CENELEC member. This European Standard exists in three official versions (English, Fren
14、ch, German). A version in any otherlanguage made by translation under the responsibility of a CENELEC member into its own language and notifiedto the Central Secretariat has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Cy
15、prus, the Czech Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland and the United Kingdom. EN 60749-27:2006+A1November
16、2012Foreword The text of document 47/1861/FDIS, future edition 2 of IEC 60749-27, prepared byIEC TC 47, Semiconductor devices,was submitted to the IEC-CENELEC parallel vote and was approved byCENELEC as EN 60749-27 on 2006-08-01. The following dates were fixed: latest date by which the EN has to be
17、implemented at national level by publication of an identical national standard or by endorsement (dop) 2007-05-01 latestdate by which the national standards conflictingwith the EN have to be withdrawn (dow) 2009-08-01 Annex ZA has been added by CENELEC. _ Endorsement noticeThe text of the Internatio
18、nal Standard IEC 60749-27:2006 was approved by CENELEC as a European Standard without any modification. _ EN 60749-27:2006 2 EN 60749-27:2006/A1:2012 - 2 - Foreword The text of document 47/2135/FDIS, future amendment 1 to edition 2 of IEC 60749-27, prepared by IEC/TC 47 “Semiconductor devices“ was s
19、ubmitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 60749-27:2006/A1:2012. The following dates are fixed: latest date by which the document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2013-07-30 latest date by w
20、hich the national standards conflicting with the document have to be withdrawn (dow) 2015-10-30 Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held responsible for identifying any or all such paten
21、t rights. Endorsement notice The text of the International Standard IEC 60749-27:2006/A1:2012 was approved by CENELEC as a European Standard without any modification. BS EN 60749-27:2006+A1:2012EN 60749-27:2006+A1:2012Foreword to amendment A1 3 EN 60749-27:2006CONTENTS 1Scope 42Normative references.
22、43Terms and definitions.44Equipment54.1 MM ESD waveform generator 54.2 Waveform verification equipment.55MM current waveform requirements65.1 General.65.2 Waveform qualification and verification86Device specific evaluation considerations86.1 Sample size and test conditions.86.2 Worst-case pin or sta
23、ndard qualification board.97Classification procedure.107.1 Device requirements107.2 Device selection107.3 Device characterization .107.4 Device stress levels.107.5 Pin combinations.117.6 Order of test118Failure criteria119Classification criteria1210 Summary12Annex ZA (normative) Normative references
24、 to international publications withtheircorresponding European publications13Figure 1 MM ESD waveform generator equivalent.6Figure 2 Typical current waveform through a shorting wire7Figure 3 Typical current waveformthrough a 500 resistor8Table 1 Waveform specification7Table 2 Pin combinations for in
25、tegrated circuits11 3 EN 60749-27:2006CONTENTS 1Scope 42Normative references3Terms and definitions4Equipment54.1 MM ESD waveform generator 4.2 Waveform verification equipment.55MM current waveform requirements65.1 General.5.2 Waveform qualification and verification86Device specific evaluation consid
26、erations86.1 Sample size and test conditions.6.2 Worst-case pin or standard qualification board.97Classification procedure.107.1 Device requirements 7.2 Device selection7.3 Device characterization .7.4 Device stress levels.7.5 Pin combinations.117.6 Order of test8Failure criteria119Classification cr
27、iteria1210 Summary12Annex ZA (normative) Normative references to international publications withtheircorresponding European publications13Figure 1 MM ESD waveform generator equivalent.6igure 2 Typical current waveform through a shorting wire7Figur 3 Typical current mthrough 500 resistor8Table 1 Wave
28、form specification72 Pin combinations for integrated circuits115.3 Extra consideration for waveform specifications BS EN 60749-27:2006+A1:2012IEC 60749-27:2006+A1:2012EN 60749-27:2006 4 SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 27: Electrostatic discharge (ESD) sensitivity test
29、ing Machine model (MM) 1 Scope This part of IEC 60749 establishes a standard procedure for testing andclassifying semiconductor devices according to their susceptibility to damage or degradation by exposure to a defined machine model (MM) electrostatic discharge (ESD). It may be usedas an alternativ
30、e test method to the human body model ESD test method. The objective is toprovide reliable, repeatable ESD test results so that accurate classifications can be performed.This test method is applicable to all semiconductor devices and is classified as destructive. ESD testing of semiconductor devices
31、 isselected from this test method, the human bodymodel (HBM see IEC 60749-26) orother testmethods in the IEC 60749 series. TheMM andHBM test methods producesimilar but not identicalresults. Unless otherwisespecified, the HBM test method is the one selected. NOTE 1 This test method does not truly sim
32、ulate discharge from real machines or metallic tools because the test method uses high parasitic inductance of the test circuit, whereas real machines and metallic tools, whosedischarge rise time is approximately 100 ps, have no inductance. NOTE 2 Certain clauses in this test method are in accordanc
33、e with IEC 61340-3-2. 2 Normative references Thefollowing referenced documents are indispensable for the application ofthis document. Fordated references, only the edition citedapplies. For undated references, the latesteditionof the referenced document (includingany amendments) applies. IEC 61340-3
34、-2, Electrostatics Part 3-2: Methods for simulation of electrostatic effects Machine model (MM Component testing ) electrostatic discharge test waveforms IEC 60749-26: Semiconductor devices Mechanical and climatictest methods Part 26: Electrostatic discharge(ESD) sensitivity testing Human body model
35、 (HBM)3Terms and definitionsForthe purposes ofthis document, thefollowing terms and definitions apply. 3.1device under testDUT semiconductor product subjected toMM ESD test BS EN 60749-27:2006+A1:2012IEC 60749-27:2006+A1:2012 5 EN 60749-27:20063.2DUT failure condition in which a DUT does not meet on
36、e or more specified parameters as a result of ESD test3.3ESD withstand voltage maximum applied ESD voltage level that does not cause failure parameter limits tobe exceeded providedthat all DUTs stressed atlower levels havealso passedNOTE Clause 3 of this test method is in accordance with IEC 61340-3
37、-2 except for the specific reference todevices. 4 Equipment4.1 MM ESD waveform generator This equipment produces an electrostatic discharge currentpulse simulating aMM ESD event for application to the DUT. The equivalent waveform generatorcircuit and tester evaluation loads are illustrated in Figure
38、 1. 4.2 Waveform verification equipment 4.2.1 General Equipment capable of verifying the MM current waveform is defined inthis standard. Thisequipment includes but is not limited to a waveform recording system, a high voltage resistorand a current transducer. 4.2.2 Waveform recording system The wave
39、form recording system shall have a minimum single shot bandwidth of 350 MHz. 4.2.3 Evaluation loads Twoevaluationloads are necessary to verify the functionality of the waveform generator: a) load 1: a shorting wire; b) load2: a 500 with a tolerance of 1% low inductance resistor appropriate rated for
40、 the voltages that will be used for waveform qualification.The lead lengthof the evaluation loads (shorting wire orresistor)shall be as short as possible consistentwith connecting the evaluation load to the appropriate reference terminals (A and B in Figure 1) while passing through the current trans
41、ducer. 4.2.4 Current transducerThe current transducer shall have a minimum bandwidth of350 MHz. 5 EN 60749-27:20063.2DUT failure condition in which a DUT does not meet one or more specified parameters as a result of ESD test3.3ESD withstand voltage maximum applied ESD voltage level that does not cau
42、se failure parameter limits tobe exceeded providedthat all DUTs stressed atlower levels havealso passedNOTE Clause 3 of this test method is in accordance with IEC 61340-3-2 except for the specific reference todevices. 4 Equipment4.1 MM ESD waveform generator This equipment produces an electrostatic
43、discharge currentpulse simulating aMM ESD event for application to the DUT. The equivalent waveform generatorcircuit and tester evaluation loads are illustrated in Figure 1. 4.2 Waveform verification equipment 4.2.1 General Equipment capable of verifying the MM current waveform is defined inthis sta
44、ndard. Thisequipment includes but is not limited to a waveform recording system, a high voltage resistorand a current transducer. 4.2.2 Waveform recording system The waveform recording system shall have a minimum single shot bandwidth of 350 MHz. 4.2.3 Evaluation loads Twoevaluationloads are necessa
45、ry to verify the functionality of the waveform generator: a) load 1: a shorting wire; b) load2: a 500 with a tolerance of 1% low inductance resistor appropriate rated for the voltages that will be used for waveform qualification.The lead lengthof the evaluation loads (shorting wire orresistor)shall
46、be as short as possible consistentwith connecting the evaluation load to the appropriate reference terminals (A and B in Figure 1) while passing through the current transducer. 4.2.4 Current transducerThe current transducer shall have a minimum bandwidth of350 MHz.3.4 ringingnoise component caused b
47、y a large inductance in the discharge circuitBS EN 60749-27:2006+A1:2012IEC 60749-27:2006+A1:2012EN 60749-27:2006 6 IEC 678/02Key1 MM ESD waveform generator (nominally 200 pF) 2 Terminal A 3 Switch4 Terminal B 5 DUT 6 Evaluation load 7 Shorting wire 8 Resistance R = 500 9 Current transducer Figure1
48、MM ESD waveform generator equivalent Requirements for Figure 1:1. The evaluation loads (7 and 8) are specified in 4.2.3.2. The current transducer (9) is specified in4.2.4. 3. Thereversal of terminals A (2) and B (4) toachieve dual polarity is not permitted. 4. The switch (3) is closed 10 ms to 100 m
49、s after the pulse delivery period of each single MMpulse to ensure that the DUT and any test fixture are not left in a charged state. NOTE 1 The performance of the waveform generator is strongly influenced by parasitic capacitance and inductance. NOTE 2 Precautions must be taken in the design of the waveform generator to avoi
