FORD WSF-M4L5-A3-2012 MAGNET PERMANENT THERMOPLASTIC BONDED ORIENTED TO BE USED WITH FORD WSS-M99P1111-A .pdf

上传人:outsidejudge265 文档编号:750231 上传时间:2019-01-14 格式:PDF 页数:2 大小:43.14KB
下载 相关 举报
FORD WSF-M4L5-A3-2012 MAGNET PERMANENT THERMOPLASTIC BONDED ORIENTED  TO BE USED WITH FORD WSS-M99P1111-A  .pdf_第1页
第1页 / 共2页
FORD WSF-M4L5-A3-2012 MAGNET PERMANENT THERMOPLASTIC BONDED ORIENTED  TO BE USED WITH FORD WSS-M99P1111-A  .pdf_第2页
第2页 / 共2页
亲,该文档总共2页,全部预览完了,如果喜欢就下载吧!
资源描述

1、 ENGINEERING MATERIAL SPECIFICATION Date Action Revisions 2012 11 08 N-STATUS No longer in use. A. Wedepohl, NA 2003 07 24 Revised Para 3.0 inserted; Para 3.1, 3.2, 3.3, 3.15, 4 deleted 1992 11 23 NGA1E10248991003 Revised 3.4, 3.8, 3.10 A. Vallabhanath 1992 05 01 DF00E00107002157 Released A. Vallabh

2、anath L. Rumao Controlled document at www.MATS Copyright 2012, Ford Global Technologies, Inc. Page 1 of 2 MAGNET, PERMANENT, THERMOPLASTIC BONDED, ORIENTED WSF-M4L5-A3 1. SCOPE NOT FOR NEW DESIGN The material defined by this specification is a thermoplastic bonded, oriented barium ferrite magnet. 2.

3、 APPLICATION This specification was released originally to define material used in magnetic gages. 3. REQUIREMENTS 3.0 STANDARD REQUIREMENTS FOR PRODUCTION MATERIALS Material suppliers and part producers must conform to the Companys Standard Requirements For Production Materials (WSS-M99P1111-A). 3.

4、4 MELT TEMPERATURE, min 155 C (ASTM D 789 or ASTM D 3417) 3.5 SPECIFIC GRAVITY, min 3.32 (ASTM D 792) 3.6 ASH 90 +/- 3% (ASTM D 2584) 3.7 HARDNESS, DUROMETER D, min 75 (ISO 868/ASTM D 2240, instantaneous, plied-up specimen. Hand held durometers shall not be used) 3.8 TENSILE STRENGTH AT 23 C, min 11

5、 MPa (ISO R 527/ASTM D 638M, 150 min x 10 x 4.0 +/- 0.2 mm specimen, 50 mm/min test speed (unfilled), 5 mm/min (filled) 3.9 FLEXURAL MODULUS, min 20 MPa (ISO 178/ASTM D 790M, Method I, Procedure A, 80 x 10 x 4.0 +/- 0.2 mm specimen, 64 mm support span) ENGINEERING MATERIAL SPECIFICATION WSF-M4L5-A3

6、Copyright 2012, Ford Global Technologies, Inc. Page 2 of 2 3.10 IMPACT STRENGTH, IZOD, min (ISO 180, Method A/ASTM D 256, Method A, 80 x 10 x 4.0 +/- 0.2 mm specimen, 10 specimens for each test) 3.10.1 At 23 +/- 2 C 10 J/m The test specimens must be conditioned for minimum of 6 h at the above specif

7、ied temperature prior to impact test. Low temperature testing shall be done within the cold box, if not possible, test can be conducted outside, but within 5 s. 3.11 HEAT DEFLECTION TEMPERATURE, min 70 C (ASTM D 648, at 0.45 MPa) 3.12 RESIDUAL INDUCTION (BR) 0.25 - 0.29 T (ASTM A 34, at 20 C) 3.13 COERCIVE FORCE (HC) 174 - 217 kA/m (ASTM A 34, at 20 C) 3.14 INTRINSIC COERCIVE FORCE (Hci) 272 - 418 kA/m (ASTM A 34, at 20 C)

展开阅读全文
相关资源
猜你喜欢
  • DLA SMD-5962-97541 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR LOW-POWER SCHOTTKY TTL QUADRUPLE 2-INPUT POSITIVE NAND BUFFER MONOLITHIC SILICON《双极低电压四重2输入阳性与门缓冲器硅单片电路数字微电路》.pdf DLA SMD-5962-97541 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR LOW-POWER SCHOTTKY TTL QUADRUPLE 2-INPUT POSITIVE NAND BUFFER MONOLITHIC SILICON《双极低电压四重2输入阳性与门缓冲器硅单片电路数字微电路》.pdf
  • DLA SMD-5962-97543 REV D-2010 MICROCIRCUIT DIGITAL LOW VOLTAGE CMOS OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf DLA SMD-5962-97543 REV D-2010 MICROCIRCUIT DIGITAL LOW VOLTAGE CMOS OCTAL BUS TRANSCEIVER WITH THREE-STATE OUTPUTS MONOLITHIC SILICON.pdf
  • DLA SMD-5962-97544 REV A-2009 MICROCIRCUIT MEMORY DIGITAL CMOS RADIATION-HARDENED 8K X 8-BIT MASK PROGRAMMABLE ROM MONOLITHIC SILICON.pdf DLA SMD-5962-97544 REV A-2009 MICROCIRCUIT MEMORY DIGITAL CMOS RADIATION-HARDENED 8K X 8-BIT MASK PROGRAMMABLE ROM MONOLITHIC SILICON.pdf
  • DLA SMD-5962-97545 REV E-2007 MICROCIRCUIT MEMORY DIGITAL CMOS 512K x 16-BIT x 2-BANK SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY (SDRAM) MONOLITHIC SILICON《单片硅同步动态随机存储器(SDRAM) 512K x.pdf DLA SMD-5962-97545 REV E-2007 MICROCIRCUIT MEMORY DIGITAL CMOS 512K x 16-BIT x 2-BANK SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY (SDRAM) MONOLITHIC SILICON《单片硅同步动态随机存储器(SDRAM) 512K x.pdf
  • DLA SMD-5962-97547 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR LOW-POWER SCHOTTKY TTL 4-BIT MAGNITUDE COMPARATORS MONOLITHIC SILICON《低功率4-BIT数量比较器硅单片电路数字双极微电路》.pdf DLA SMD-5962-97547 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR LOW-POWER SCHOTTKY TTL 4-BIT MAGNITUDE COMPARATORS MONOLITHIC SILICON《低功率4-BIT数量比较器硅单片电路数字双极微电路》.pdf
  • DLA SMD-5962-97548 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR SYNCHRONOUS 4-BIT COUNTER MONOLITHIC SILICON《同步4-BIT计数器硅单片电路数字双极微电路》.pdf DLA SMD-5962-97548 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR SYNCHRONOUS 4-BIT COUNTER MONOLITHIC SILICON《同步4-BIT计数器硅单片电路数字双极微电路》.pdf
  • DLA SMD-5962-97549 REV A-2010 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL OCTAL D-TYPE EDGE-TRIGGERED FLIP-FLOPS W 3-STATE OUTPUTS MONOLITHIC SILICON.pdf DLA SMD-5962-97549 REV A-2010 MICROCIRCUIT DIGITAL BIPOLAR ADVANCED SCHOTTKY TTL OCTAL D-TYPE EDGE-TRIGGERED FLIP-FLOPS W 3-STATE OUTPUTS MONOLITHIC SILICON.pdf
  • DLA SMD-5962-97550 REV B-2012 MICROCIRCUIT DIGITAL-LINEAR DUAL ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH FIFO MONOLITHIC SILICON.pdf DLA SMD-5962-97550 REV B-2012 MICROCIRCUIT DIGITAL-LINEAR DUAL ASYNCHRONOUS COMMUNICATIONS ELEMENT WITH FIFO MONOLITHIC SILICON.pdf
  • DLA SMD-5962-97553 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR TTL MONOSTABLE MULTIVIBRATOR MONOLITHIC SILICON《单稳多谐振荡器晶体管硅单片电路数字双极微电路》.pdf DLA SMD-5962-97553 REV A-2006 MICROCIRCUIT DIGITAL BIPOLAR TTL MONOSTABLE MULTIVIBRATOR MONOLITHIC SILICON《单稳多谐振荡器晶体管硅单片电路数字双极微电路》.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1