1、EIA ENGINEERING BULLETIN Acceleration Factors SSB-1.003-A (Revision of SSB-1.003) (Annex to SSB-1, Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Military, Aerospace and Other Rugged Applications) OCTOBER 2002 ELECTRONIC INDUSTRIES ALLIANCE GOVERNMENT ELECTRONICS AND I
2、NFORMATION TECHNOLOGY ASSOCIATION ENGINEERING DEPARTMENT Copyright Government Electronics -65 to +150“C or AT=215“C). 100,000 10,000 v) Q) o - G 1,000 1 O0 10 m=2 - I l I III I III Miit+-y (Ground failure mechanisms with high Coffin-Manson exponents (e.9. stress cracking) are more sensitive to high
3、cyclical temperature ranges. This figure also shows that mechanisms with a Coffin-Manson exponent greater than 4 and pass 500 cycles of Condition C (or 1 O00 cycles of Condition B) are unlikely to fail in many of the worst case environment categories; mechanisms with exponents less than 4, however,
4、are more likely to fail in these environment categories. One should exercise caution when evaluating results of Temperature Cycling tests performed over very high cyclical temperature ranges. JESD22A104, Temperature Cycling, notes that conditions D (-65 to +200“C) and F (-65 to +175“C) may exceed th
5、e glass transition temperature of plastic packages. Resent studies by COQ? indicate that condition C (-65 to +I 50C) can create unreasonably high acceleration of thermal stresses and potentially mask failure mechanisms more relevant to field applications. The case studies support the dependence of t
6、he thin film cracking mechanism on absolute temperature caused by the glass transition temperature of the molding compound. Cory concludes that temperature cycling in condition B (-55 to +125“C) is more likely to detect the most sensitive mechanisms (such as delamination) and better predict reliabil
7、ity performance in the field. *O A. R. Cory, “Improved Reliability Prediction through Reduced-Stress Temperature Cycling,“ 38th Annual Proceedings of the International Reliability Physics Symposium, 2000, pp. 231-236 11 Copyright Government Electronics & Information Technology Association Reproduced
8、 by IHS under license with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-This page left blank. Copyright Government Electronics & Information Technology Association Reproduced by IHS under license with GEIA Not for ResaleNo reproduction or networking permitt
9、ed without license from IHS-,-,-EIA Document Improvement Proposal Document No. If in the review or use of this document, a potential change is made evident for safes, health or technical reasons, please fill in the appropriate information below and mail or FAX to: Document Title: Electronic Industri
10、es Alliance GEIA, Standards & Technology Department 2500 Wilson Blvd. Arlington, VA 2220 1 FAX: (703) 907-7501 Submitters Name: Telephone No.: FAX No.: E-mail: Urgency of Change: 0 Immediate: 0 At next revision: b. Recommended Changes: Signature: c. ReasodRationale for Recommendation: Date: FOR GEIA
11、 USE ONLY Responsible Committee: Chairman: Date comments forwarded to Committee Chairman: Copyright Government Electronics & Information Technology Association Reproduced by IHS under license with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-Copyright Gover
12、nment Electronics & Information Technology Association Reproduced by IHS under license with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-o O EIA ENGINEERING BULLETIN Acceleration Factors SSB-1.003 (Annex to SSB-1, Guidelines for Using Plastic Encapsulated M
13、icrocircuits and Semiconductors in Military, Aerospace and Other Rugged Applications) NOVEMBER 1999 ELECTRONIC INDUSTRIES ALLIANCE GOVERNMENT ELECTRONICS AND INFORMATION TECHNOLOGY ASSOCIATION ENGINEERING DEPARTMENT A SECTOR OF Copyright Government Electronics & Information Technology Association Re
14、produced by IHS under license with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,- STD-EIA SSB-2-003-ENGL L999 9 3234600 063bL94 824 D NOTICE EIA Engineering Standards and Publications are designed to serve the public interest through eliminating misunderstan
15、dings between manufacturers and purchasers, facilitating interchangeability and improvement of products, and assisting the purchasers in selecting and obtaining with minimum delay the proper product for their particular needs. Existence of such Standards and Publications shall not in any respect pre
16、clude any member or nonmember of EL4 from manufacturing or selling products not conforming to such Standards and Publications, nor shall the existence of such Standards and Publications preclude their voluntary use by those other than ELA members, whether the standard is to be used either domestical
17、ly or internationally. Standards and Publications are adopted by EIA in accordance with the American National Standards Institute (ANSI) patent policy. By such action, ELA does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the Standard o
18、r Publication. Technical Publications are distinguished from EIA Standards or Interim Standards, in that they contain a compilation of engineering data or information useful to the technical community and represent approaches to good engineering practices that are suggested by the formulating commit
19、tee. This Bulletin is not intended to preclude or discourage other approaches that similarly represent good engineering practice, or that may be acceptable to, or have been accepted by, appropriate bodies. Parties who wish to bring other approaches to the attention of the formulating committee to be
20、 considered for inclusion in future revisions of this publication are encouraged to do so. It is the intention of the formulating committee to revise and update this publication from time to time as may be occasioned by changes in technology, industry practice, or government regulations, or for othe
21、r appropriate reasons. (From Project Number PN-4680, formulated under the cognizance of the GEL4 G-12 Solid State Devices Committee) Published by OELECTRONIC INDUSTRIES ALLIANCE 1999 Engineering Department 2500 Wilson Boulevard Arlington, VA 22201 All Rights Reserved Printed in U.S.A Copyright Gover
22、nment Electronics & Information Technology Association Reproduced by IHS under license with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-8 STDmEIA SSB-L.003-ENGL 1997 3234600 0636195 760 W SSB-1 .O03 AC KNOW LEDGM ENT Members of Task Group G9903 of the GEIA
23、 G-12 Solid State Devices Committee developed this document. We would like to thank them for their dedication to this effort. While the principle members of the Task Groups are shown below, it is not possible to include all of those who assisted in the evolution of this Bulletin. To each of them, th
24、e members of the GEIA G-12 Solid State Devices Committee extend their gratitude. Mr. Gene Almendinger Motorola Commercial, Government & Industrial Solutions Mr. Greg Bledsoe Honeywell, Satellite Systems Operations Mr. Peter Brooks Intersil Ms. Mary Hartweil Mr. Wes Hubbell Mr. Ted Krueger General Se
25、miconductor Mr. Paul Kelley Mr. Henry Livingston Mr. Jack Tarsa Mr. Bahig Tawfellos Harris Government Communications System Division Raytheon Systems Company, C3 Litton Aero Products Sanders, a Lockheed Martin Company General Dynamics Defense Systems AlliedSignal, Defense & Space Systems i Copyright
26、 Government Electronics & Information Technology Association Reproduced by IHS under license with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,- - STD-EIA SSB-L.003-ENGL L999 W 3234b00 Ob3bL9b bT7 b SSB-1 .O03 ACCELERATION FACTORS CONTENTS 1 Scope 1 2 Refere
27、nce Documents. . 1 3 Thermal Effects (Arrhenius) 1 4 Temperature - Humidity Effects (Hallberg - Peck) 4 5 Thermo-mechanical Effects (Coffin-Manson) . 7 iii Previous Page is Blank Copyright Government Electronics & Information Technology Association Reproduced by IHS under license with GEIA Not for R
28、esaleNo reproduction or networking permitted without license from IHS-,-,- STD-EIA SSB-2.003-ENGL L999 D 3234600 Ob3bL97 533 SSB-1 .O03 1 Scope This document is an annex to EIA Engineering Bulletin SSB-1, Guidelines for Using Plastic Encapsulated Microcircuits and Semiconductors in Military, Aerospa
29、ce and Other Rugged Applications (the latest revision). This document provides reference information concerning acceleration factors commonly used by device manufacturers to model failure rates in conjunction with statistical reliability monitoring. These acceleration factors are frequently used by
30、OEMs in conjunction with physics of failure reliability analysis to assess the suitability of plastic encapsulated microcircuits and semiconductors for specific end use applications. 2 Reference Documents. EIA JEP-122 EIA JESD-22-A11 O Failure Mechanisms and Models for Silicon Semiconductor Devices
31、Highly-Accelerated Temperature and Humidity Stress Test (HAST) 3 Thermal Effects (Arrhenius) Af = acceleration factor E, = activation energy, typical value for a given failure mechanism or derived from empirical data k = Boltzmans Constant (8.61 71 x 1 O-5 eV) Tu = use environment junction temperatu
32、re (in OK) T, = test environment junction temperature (in OK) 11 Ar. =ex#(-) Tu Tt The Arrhenius Life-Temperature Relationship is widely used to model product life as a function of temperature. This relationship is used to express both a single failure mechanisms sensitivity to temperature and a pro
33、ducts thermal acceleration factor. When used to estimate the reliability of a product, the form above is used to express that products reliability with respect to temperature and as a function of time. Device manufacturers use the Arrhenius equation to derive acceleration factors for High Temperatur
34、e Operating Life, High Temperature Steady State Life and Data Retention (for non-volatile memory devices) from this equation. Time-to-failure estimates using the Arrhenius equation are very sensitive to the activation energy value. For example, the effect of a 0.05eV variation in activation energy o
35、n time-to-failure at 70C is: W. Nelson, “Accelerated Testing: Statistical Models, Test Plans, and Data Analysis“ John Wiley & Sons, 1990 1 1 Copyright Government Electronics & Information Technology Association Reproduced by IHS under license with GEIA Not for ResaleNo reproduction or networking per
36、mitted without license from IHS-,-,-SSB-1 .O03 Field e 0.04 micron thick Metallization Electromigration (Aluminum, alloys, and multi-layer aluminum) Corrosion - Chlorine Corrosion - Phosphorus Wafer Fabrication Chemical contamination Silicon /crystal defects EINJEP122, Failure Mechanisms and Models
37、for Silicon Semiconductor Devices, describes the basic thermal acceleration equation in detail and provides guidance in selecting thermal activation energies used to estimate system failure rates for the Sum-of-the-Failure-Rates Method. EINJEPl22 includes a single value for each as a worst-case like
38、ly value for use as an industry suggestion to provide consistency and comparisons. The following table, from EINJEP122, is a first order listing of thermal activation energies assigned to general classifications of failure mechanisms applicable to microcircuits. If one has only superficial knowledge
39、 of the physical processing employed and has no other way of obtaining the characteristics of the failure mechanism, but knows that the failure falls under one of the categories on this table, then the selection of the typical value for thermal activation energy will provide the basis for a reasonab
40、le estimate of that failure mechanisms effect on the microcircuit failure rate. If one has more knowledge of the specific process and material used, EINJEP122 includes more detail to some of the specific materials and processes listed here. . 0.7 0.28 1 .o 0.6 0.5 0.7 0.70 0.53 0.95 0.53 0.30 0.80 1
41、 .o0 1 .o0 1 .o0 0.50 0.30 0.50 2 Copyright Government Electronics & Information Technology Association Reproduced by IHS under license with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-SSB-1 .O03 One should exercise caution where the Arrhenius Life-Tempera
42、ture Relationship is used to derive acceleration factors for data retention time-to-failure. A recent stud? indicates that the Arrhenius law is inconsistent with extrapolation of non-volatile memory data retention time-to-failure in highly accelerated life testing. The following physical model for E
43、PROM data retention has been proposed which claims that non-volatile memory data retention time varies linearly with temperature T rather than with 1/l resulting in a drastic reduction of the extrapolated tirne-to- failure in highly accelerated life tests. tR = data retention time to failure to = da
44、ta retention time in reference conditions T= temperature TOD, = data-retention characteristic temperature B. De Salvo, G. Ghibaudo, G. Pananakakis, G. Reimbold, F. Mondond, B. Guillaumot, and P. Candelier, “Experimental and Theoretical Investigation of Nonvolatile Memory Data-Retention“, IEEE Transa
45、ctions on Electron Devices, Vol. 46, NO. 7, p.1518-1524, July 1999 3 Copyright Government Electronics & Information Technology Association Reproduced by IHS under license with GEIA Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-SSB-1 .O03 4 Temperature - Humidity
46、Effects (Hallberg - Peck) / 3 Ar = acceleration factor Af = RH ) enp: 1 1 ) RH, = use environment relative humidity RHu Tu Tt Ht = test environment relative humidity Ea = activation energy, 0.90eV k = Boltzmans Constant (8.61 71 x 1 O5 eV) Tu = use environment junction temperature (in OK) T, = test
47、environment junction temperature (in OK) This equation is often used to estimate acceleration factors for temperature-humidity and bias effects when applied to HAST test results, and for temperature-humidity effects when applied to autoclave (unbiased). This model is also used for HAST testing perfo
48、rmed without bias, a condition preferred by some users to approximate dormant storage under a variety of long term storage conditions. Peck3 described a relationship between temperature, humidity and life for electrolytic corrosion of aluminum metallization. Peck concluded that this relationship all
49、ows the establishment of very-short-time tests to replace 1000-hour Temperature Humidity Bias (THE) testing and suggested using this relationship to extrapolate autoclave test results. This relationship has the following form. where tt is time-to-failure, n = -2.66, Ea = 0.79eV, A is a constant (the temperature humidity failure rate in reference condi
