GOST R 52614 9-2013 Framework for managing sustainable development in business districts《商业区可持续发展的管理框架》.pdf

上传人:arrownail386 文档编号:777513 上传时间:2019-01-23 格式:PDF 页数:32 大小:326.85KB
下载 相关 举报
GOST R 52614 9-2013 Framework for managing sustainable development in business districts《商业区可持续发展的管理框架》.pdf_第1页
第1页 / 共32页
GOST R 52614 9-2013 Framework for managing sustainable development in business districts《商业区可持续发展的管理框架》.pdf_第2页
第2页 / 共32页
GOST R 52614 9-2013 Framework for managing sustainable development in business districts《商业区可持续发展的管理框架》.pdf_第3页
第3页 / 共32页
GOST R 52614 9-2013 Framework for managing sustainable development in business districts《商业区可持续发展的管理框架》.pdf_第4页
第4页 / 共32页
GOST R 52614 9-2013 Framework for managing sustainable development in business districts《商业区可持续发展的管理框架》.pdf_第5页
第5页 / 共32页
点击查看更多>>
资源描述

1、 52614.9 2013 - IWA 9:2011 Framework for managing sustainable development in business districts (IDT) 52614.92013 II 1 ( ) - ( ) , 4 2 10 3 17 2013 . 2328 4 IWA 9:2011 - (IWA 9:2011 Framework for managing sustainable development in business districts). - 1.5. , 5 1.02012 ( 8). ( 1 ) , . () . , (gost

2、.ru) , 2014 , 52614.92013 III 1 . 1 2 1 3 1 4 - 5 5 - 8 6 - 10 () . 14 () . 24 . 25 52614.92013 IV IWA 9:2011 (ISO) - ( ISO). , , - ISO. ISO -. , , ISO. , ISO ISO. - ISO . ISO, ISO , , - . - . , - , ISO (IEC). . -, , - ISO , . ISO, - . , - , - ISO, . , . ISO . IWA 9 2010 . (), - - (AFNOR), 2010 . ()

3、 , . 52614.92013 V : - - ; - ; - - . , -. ( ) . : , ; , , ; - , - , -; , , . - , - . - , , - . -, . - . , , . , : ; - , , - , . , , , - ; , , , ; , . - - - . - . , - , , . -, , , . , -, , , , , , , . - -. - , - . , , ( ) , 52614.92013 VI . , 15392, O 26000, , O/T 207. - - . - , . - , , (). , . . - ,

4、 -, - . , - . - . - , : , -, - -; ; ; ; ; -, , - . - -, , , -, -, (). , , -, - , . , : - (, , ); (, ); - (, ); , (, - ); (, ); , , -, (, ). 52614.92013 1 - Framework for managing sustainable development in business districts 20141201 1 -, , -. - , , -. - . () -. -, 15392, 26000 , - /T 207 (. 4). 2 . - , ( ). ISO 6707-1 1: (ISO 6707-1:2004 Building and civil engineering Vocabulary Part 1: General terms) ISO 14050 (ISO 14050:2009. Environmental manage-ment Vocabulary) 3 ( 6707-1, 14050): 3.1

展开阅读全文
相关资源
猜你喜欢
  • DLA MIL-PRF-19500 628 B-2012 SEMICONDUCTOR DEVICE DIODE SILICON ULTRA-FAST RECOVERY POWER RECTIFIER 1N6690 THROUGH 1N6693 1N6690US THROUGH 1N6693US JAN JANTX JANTXV AND JANS.pdf DLA MIL-PRF-19500 628 B-2012 SEMICONDUCTOR DEVICE DIODE SILICON ULTRA-FAST RECOVERY POWER RECTIFIER 1N6690 THROUGH 1N6693 1N6690US THROUGH 1N6693US JAN JANTX JANTXV AND JANS.pdf
  • DLA MIL-PRF-19500 630 F-2012 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR P-CHANNEL SILICON TYPES 2N7389 2N7390 2N7389U 2N7389U5 AND 2N7390U 2N7390U5 JANTXV R AN.pdf DLA MIL-PRF-19500 630 F-2012 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTOR P-CHANNEL SILICON TYPES 2N7389 2N7390 2N7389U 2N7389U5 AND 2N7390U 2N7390U5 JANTXV R AN.pdf
  • DLA MIL-PRF-19500 631 B VALID NOTICE 1-2011 Semiconductor Device Filed Effect Radiation Hardened Total Dose and Single Event Effects) Transistors N-Channel Silicon Types 2N7395 2N7.pdf DLA MIL-PRF-19500 631 B VALID NOTICE 1-2011 Semiconductor Device Filed Effect Radiation Hardened Total Dose and Single Event Effects) Transistors N-Channel Silicon Types 2N7395 2N7.pdf
  • DLA MIL-PRF-19500 632 B VALID NOTICE 1-2011 Semiconductor Device Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistors N-Channel Silicon Types 2N7399 2N.pdf DLA MIL-PRF-19500 632 B VALID NOTICE 1-2011 Semiconductor Device Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistors N-Channel Silicon Types 2N7399 2N.pdf
  • DLA MIL-PRF-19500 633 D-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTORS P-CHANNEL SILICON TYPES 2N7403 AND 2N7404 JANSD AND JANSR.pdf DLA MIL-PRF-19500 633 D-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTORS P-CHANNEL SILICON TYPES 2N7403 AND 2N7404 JANSD AND JANSR.pdf
  • DLA MIL-PRF-19500 634 D-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTORS N-CHANNEL SILICON TYPES 2N7405 2N7406 2N7407 AND 2N7408 JANSD AND JANSR.pdf DLA MIL-PRF-19500 634 D-2013 SEMICONDUCTOR DEVICE FIELD EFFECT RADIATION HARDENED TRANSISTORS N-CHANNEL SILICON TYPES 2N7405 2N7406 2N7407 AND 2N7408 JANSD AND JANSR.pdf
  • DLA MIL-PRF-19500 638 B VALID NOTICE 1-2011 Semiconductor Device Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor N-Channel Silicon Type 2N7410 JANS.pdf DLA MIL-PRF-19500 638 B VALID NOTICE 1-2011 Semiconductor Device Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor N-Channel Silicon Type 2N7410 JANS.pdf
  • DLA MIL-PRF-19500 639 A VALID NOTICE 2-2011 Semiconductor Device Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor P-Channel Silicon Type 2N7411 JANSD.pdf DLA MIL-PRF-19500 639 A VALID NOTICE 2-2011 Semiconductor Device Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor P-Channel Silicon Type 2N7411 JANSD.pdf
  • DLA MIL-PRF-19500 642 D VALID NOTICE 1-2012 Semiconductor Device Diode Silicon Power Rectifier Dual Common Cathode or Anode Center Tap Ultrafast Types 1N6762 Through 1N6765 and 1N6.pdf DLA MIL-PRF-19500 642 D VALID NOTICE 1-2012 Semiconductor Device Diode Silicon Power Rectifier Dual Common Cathode or Anode Center Tap Ultrafast Types 1N6762 Through 1N6765 and 1N6.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > GOST

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1