1、JEDEC PUBLICATION Recommend Practice for Measurement of Transistor Lead Temperature JEP84A (Revision of JEP84) JUNE 2004 JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directo
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6、ormance with this standard may be made unless all requirements stated in the standard are met. Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at the address below, or call (703) 907-7559 or www.jedec.org Published by JE
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8、lease refer to the current Catalog of JEDEC Engineering Standards and Publications online at http:/www.jedec.org/Catalog/catalog.cfm Printed in the U.S.A. All rights reserved PLEASE! DONT VIOLATE THE LAW! This document is copyrighted by JEDEC and may not be reproduced without permission. Organizatio
9、ns may obtain permission to reproduce a limited number of copies through entering into a license agreement. For information, contact: JEDEC Solid State Technology Association 2500 Wilson Boulevard Arlington, Virginia 22201-3834 or call (703) 907-7559 JEDEC Publication No. 84A -i- RECOMMENDED PRACTIC
10、E FOR MEASUREMENT OF TRANSISTOR LEAD TEMPERATURE Foreword This recommendation is intended for use with those transistors where the thermal capabilities are related to the temperature of the terminal leads. It was originally prepared by the JC-24 Committee on Low Power Transistors and approved for pu
11、blication by the JEDEC Solid State Products Council of EIA and NEMA. JEP84 has been revised by the JC-25 committee on Transistors. JEDEC Publication No. 84A -ii- JEDEC Publication No. 84A Page 1 RECOMMENDED PRACTICE FOR MEASUREMENT OF TRANSISTOR LEAD TEMPERATURE (From JEDEC Board Ballot JCB-04-39, f
12、ormulated under the cognizance of the JC-25 Committee on Transistors.) 1 Scope It is often required to measure the lead temperature of a packaged transistor under various load conditions. This publication covers recommended methods for the measurement of transistor lead temperatures under various lo
13、ad conditions. The techniques described are sufficiently accurate for most applications. 2 Point of temperature measurement The recommended point of lead temperature measurement is one-sixteenth inch (1.5mm) from the case or at a point specified by the manufacturer. 3 Methods of temperature measurem
14、ents 3.1 A thermocouple attached to the lead of the transistor with its potential read by a potentiometer or an equivalent instrument that interprets the temperature directly. 3.2 A hand thermocouple type pyrometer, such as Alnor Instrument Companys ( Type 4000, The Pyrometer Instrument Company, Inc
15、., ( Model 250, or equivalent. 3.3 Temperature sensitive paint such as Tempilaq*or in the solid form such as Tempilstik*( Korthals Therm-o-signal paints (www.korthals.nl/e/Product/TOSe.html), or equivalent. 3.4 Liquid crystals such as those from Liquid Crystal Industries, Vari-Light Corporation, or
16、equivalent. 3.5 An infrared detector such as Barnes Engineering Company Model RM-2B supported by Quantum Focus Instruments Corporation (http:/ Philco Corporation Model 700B, or equivalent. *Trademark of Tempil Corporation JEDEC Publication No. 84A Page 2 4 Comment and limitations of each method 4.1
17、Thermocouple - Potentiometer (Range typically 100 C to 350 C) a) The error of this technique in degrees Celsius is less than +/- 1% full scale. b) This technique permits measurements where the visibility or accessibility of the transistor lead is restricted. c) Care must be taken to have solid conta
18、ct of the thermocouple on the lead surface with minimum deformation of the lead. Attachment by welding or soldering is recommended. d) The thermocouple must be shielded from forced drafts. e) The heat transfer away from lead due to the attachment of the thermocouple shall be small compared to that t
19、hrough the lead. The thermocouple ball shall be no greater than one-half the lead cross-sectional area. f) Excellent reference- ASTM MNL 12, Manual on the Use of Thermocouples in Temperature Measurement. 4.2 Hand Pyrometer (Range typically 10 C to 350 C) a) The error of this technique in degrees Cel
20、sius is less than 8% of full scale. b) Transistor lead must be accessible during measurement. c) This is a relatively quick and simple technique. d) This technique is adaptable to measurements of large leads only. 4.3 Temperature Sensitive Paint (Range typically 50 C to 350 C) a) The error of this t
21、echnique in degrees Celsius can be less than 1% of the indicated temperature. b) The transistor lead must be visible and accessible. c) This is a quick and simple technique of ascertaining whether lead temperature is above or below a particular value. JEDEC Publication No. 84A Page 3 4 Comment and l
22、imitations of each method (contd) 4.4 Liquid Crystals 4.4.1 Broad Range Types (Ranges in degrees Celsius: 50-130, 55-95, 71-171, 114-175 or 126-190) a) The error of this technique in degrees Celsius is usually less than 5% of the indicated temperature. b) The transistor lead must be visible and acce
23、ssible. c) This is a quick and simple technique. 4.4.2 Narrow Range Types (Range of measurement is any 3, 5 or 10 degree range specified between 20 C 72 C, 20 C 65 C, or 20 C 70 C respectively) a) The error of this technique in degrees Celsius is usually less than 1% of the indicated temperature. b)
24、 The transistor lead must be visible and accessible. c) This is a quick and simple technique. 4.4.3 Memory Type (Range: 30 C to 60 C) a) The error of this technique in degrees Celsius is usually less than 5% of the indicated temperature. b) This technique permits measurements where the visibility or
25、 accessibility of the transistor lead is restricted. c) This is a quick and simple technique of ascertaining whether lead temperature exceeded a particular value. 4.5 Infrared Detector (Range typically 15 C to 165 C) a) The error of this technique in degrees Celsius is less than 5% of the indicated
26、temperature. b) The transistor lead must be visible and accessible. c) The emissivity of the lead must be known and compensated for. JEDEC Publication No. 84A Page 4 Annex A (informative) Differences between JEP84A and JEP84 This table briefly describes most of the changes made to entries that appea
27、r in this publication, JEP84A, compared to its predecessor, JEP84 (February 1973). If the change to a concept involves any words added or deleted (excluding deletion of accidentally repeated words), it is included. Some punctuation changes are not included. Page Description of Change 1 Clause 1 Scop
28、e added of a package transistor. 1 Subclause 3.1 added or an equivalent instrument that interprets the temperature directly. 1 Subclause 3.2 added website addresses. 1 Subclause 3.3 added website address. 1 Subclause 3.5 added website address. 2 Subclause 4.1 added list item f. Standard Improvement
29、Form JEDEC JEP84A The purpose of this form is to provide the Technical Committees of JEDEC with input from the industry regarding usage of the subject standard. Individuals or companies are invited to submit comments to JEDEC. All comments will be collected and dispersed to the appropriate committee
30、(s). If you can provide input, please complete this form and return to: JEDEC Attn: Publications Department 2500 Wilson Blvd. Suite 220 Arlington, VA 22201-3834 Fax: 703.907.7583 1. I recommend changes to the following: Requirement, clause number Test method number Clause number The referenced clause number has proven to be: Unclear Too Rigid In Error Other 2. Recommendations for correction: 3. Other suggestions for document improvement: Submitted by Name: Phone: Company: E-mail: Address: City/State/Zip: Date:
