1、JEDEC STANDARD Silicon Rectifier Diodes JESD282B.01 (Minor Revisions of JESD282-B, April 2000) NOVEMBER 2002 JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and
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10、rd No. 282B.01 -i- SILICON RECTIFIER DIODES CONTENTS Page SECTION 1: RECTIFIER DIODE DEFINITIONS AND LETTER SYMBOLS 1.1 Physical structure nomenclature 1 1.2 Semiconductor rectifier diode characteristics and rating terms 2 1.3 Terms used in describing rectifier diode circuits 5 1.4 General letter sy
11、mbols 7 1.4.1 Temperature symbols 7 1.4.2 Thermal resistance and impedance symbols 7 1.4.3 Transient and electrical symbols 7 1.5 Letter symbols subscripts 8 SECTION 2: REGISTRATION 2.1 Introduction 17 2.2 Purpose and intent 17 2.3 Brief outline of registration procedures 18 2.4 Detailed procedures
12、and rules governing registration of type designations without letter suffix 18 2.4.1 Application 18 2.4.2 Assignment 20 2.4.3 Release (public announcement) 21 2.4.4 Correction notice and re-registration 21 2.5 Detailed procedures and rules governing registration of type designations with letter suff
13、ix 23 2.6 Appeal of the Type Administrators decisions 24 2.7 Description of registration format 25 2.8 Use of JEDEC registered data 25 2.9 Test and rating methods applied to JEDEC data 26 SECTION 3: USE OF RECTIFIER DIODE REGISTRATION FORMATS 3.1 Introduction 27 3.2 General description 28 3.3 Mechan
14、ical data 28 3.4 Maximum data 29 3.4.1 Temperature 29 3.4.2 Electrical ratings 30 3.5 Electrical characteristics 33 3.5.1 Reverse blocking current 33 3.5.2 Forward voltage 33 3.5.3 Reverse recovery 33 3.6 Thermal characteristics 34 SECTION 4: RATING ESTABLISHMENT AND VERIFICATION TESTS 4.1 Introduct
15、ion and reference table 35 4.2 Electrical tests 36 4.2.1 Repetitive ratings tests 36 4.2.2 Nonrepetitive rating tests 43 JEDEC Standard No. 282B.01 -ii- SILICON RECTIFIER DIODES CONTENTS (continued) Page 4.3 Non-electrical tests 59 4.3.1 Storage life test 59 4.3.2 Lead or terminal temperature test 5
16、8 4.4 Post test measurements 60 SECTION 5: CHARACTERISTICS TESTS 5.1 Introduction and reference table 61 5.1.1 Automatic Test Equipment (ATE) 62 5.2 General guidelines 62 5.3 Types of electrical tests 63 5.3.1 Alternating current or dynamic tests 63 5.3.2 Continuous current or static tests 63 5.3.3
17、Pulse tests 63 5.4 Thermal considerations 64 5.4.1 Thermal equilibrium 64 5.4.2 Thermal monitoring 64 5.4.3 Thermal management 64 5.5 Instrumentation 65 5.5.1 Analog instruments 65 5.5.2 Digital voltmeters 66 5.5.3 Power supplies 66 5.5.4 Pulse generators 66 5.5.5 Oscilloscopes 68 5.5.6 Temperature
18、measuring instruments 59 5.6 Electrical characteristics tests 70 5.6.1 Peak reverse current, IRM 71 5.6.2 DC reverse current, IR 72 5.6.3 Average reverse current, IR(AV) 73 5.6.4 Peak forward voltage, VFM 77 5.6.5 DC forward voltage, VF 80 5.6.6 Average forward voltage, VF(AV) 81 5.6.7 Reverse break
19、down voltage, V(BR) 82 5.6.8 Forward switching characteristics 86 5.6.9 Reverse recovery characteristics 90 5.6.10 Total capacitance, Ct 106 5.7 Thermal characteristics tests 107 5.7.1 Terminology 108 5.7.2 General test description 109 5.7.3 Heat dissipator requirements 112 5.7.4 Determining referen
20、ce temperature 113 5.7.5 Thermal resistance test methods 114 5.7.6 Transient thermal impedance test methods 123 5.7.7 Effective thermal resistance of bridge rectifier assemblies 131 JEDEC Standard No. 282B.01 -iii- SILICON RECTIFIER DIODES CONTENTS (continued) Page SECTION 6: USERS GUIDE 6.1 Introdu
21、ction 139 6.2 Diode safety considerations 139 6.3 Voltage considerations 139 6.3.1 Repetitive peak reverse voltage 139 6.3.2 Non-repetitive peak reverse voltage 140 6.3.3 Overvoltages 140 6.3.4 Series operation 141 6.4 Current considerations 142 6.4.1 Maximum operating junction temperature 142 6.4.2
22、 Junction heat generation 143 6.4.3 Thermal resistance 143 6.4.4 Steady-state current ratings 145 6.4.5 Overload current ratings 146 6.4.6 Parallel operation 147 6.5 Switching characteristics 148 6.5.1 Forward recovery and turn-on-time 148 6.5.2 Reverse recovery 149 6.6 Fundamental rectifier circuit
23、s 150 6.7 Cooling considerations 156 6.7.1 General mounting considerations 156 6.7.2 Installation of stud-mounted semiconductor devices 159 6.7.3 Installation of disk-type semiconductor devices 159 6.7.4 Installation of lead-mounted semiconductor devices 160 6.7.5 Installation of press-fit semicondu
24、ctor devices 161 6.7.6 Installation of button-type semiconductor devices 162 6.8 Temperature measurements 163 6.8.1 General 163 6.8.2 Diode junction temperature 163 6.8.3 Case temperature 165 6.8.4 Mounting surface temperature 165 6.8.5 Lead temperature 167 6.8.6 Free-air convection measurements of
25、assemblies 167 6.8.7 Forced-air convection measurements of assemblies 168 6.9 Diode Failure modes 169 6.9.1 General 169 6.9.2 Catastrophic failure 170 6.9.3 Degradation failure 170 6.10 Simple measurement in troubleshooting 170 6.11 Surface mounting 171 SECTION 7: DIFFERENCES BETWEEN JESD282B.01 AND
26、 JESD282-B 172 JEDEC Standard No. 282B.01 -iv- SILICON RECTIFIER DIODES CONTENTS (continued) Page Figures 1.1 Cross section of a semiconductor rectifier diode 10 1.2 Typical semiconductor rectifier diode packages 10 1.3 Sketches of typical semiconductor rectifier stacks 11 1.4 Graphical symbol of a
27、rectifier diode and of a rectifier circuit element 11 1.5 Example of rectifier circuit elements in a circuit diagram 11 1.6 Examples of rectifier circuit elements 12 1.7 Reverse voltage waveforms 12 1.8 Current waveforms during rectifier diodes reverse recovery 13 1.9 Illustration of symbols for rev
28、erse and forward voltage and current and junction temperature excursion resulting from the developed power 14 1.10 Reverse Recovery Softness Factor (RRSF) 15 4.1 Diode operating life test circuit and waveforms 37 4.2 Working peak reverse voltage life test 38 4.3 DC reverse voltage life test 39 4.4 D
29、iode thermal fatigue life test circuit and waveforms 41 4.5 Diode repetitive peak reverse voltage test circuit and waveforms 42 4.6 Reverse energy test circuit for Schottky Rectifiers - Test Method No. 1 45 4.7 Reverse energy test circuit for Schottky Rectifiers - Test Method No. 2 45 4.8 Diode surg
30、e current and non-repetitive peak reverse voltage test circuit and waveforms 47 4.9 Diode surge current and non-repetitive peak reverse voltage without average forward current test circuits and waveforms 49 4.10 Non-repetitive peak reverse voltage test circuit 51 4.11 Basic test circuit for surge (n
31、on-repetitive), 1.5 millisecond duration 52 4.12 Non-repetitive reverse power test circuit 55 4.13 Destructive current test circuit 56 4.14 Rectangular pulse power test waveform and circuit 58 5.1 Pulse generation circuit and waveform 67 5.2 Peak reverse current test circuit 72 5.3 DC reverse curren
32、t test circuit 73 5.4 Average reverse current test circuit, without forward current 74 5.5 Average reverse current test circuit with forward current 76 5.6 60 Hz peak forward voltage test circuit 77 5.7 Peak forward voltage pulse test circuit 79 5.8 Detailed peak forward voltage pulse test circuit 7
33、9 5.9 Minimum reverse breakdown voltage test circuit 82 5.10 Variable amplitude ac source for reverse breakdown voltage test 83 5.11 Maximum reverse breakdown voltage test circuit 85 5.12 Forward switching characteristics test circuit 87 5.13 Forward switching characteristic waveforms 88 5.14 Test c
34、ircuit for reverse recovery condition A 92 5.15 Response pulse waveforms for condition A 93 JEDEC Standard No. 282B.01 -v- SILICON RECTIFIER DIODES CONTENTS (continued) Page 5.16 Test circuit for reverse recovery condition B 95 5.17 Suggested board layout for low L1/R4 for condition B 96 5.18 DUT cu
35、rrent waveform (condition B) 97 5.19 Circuit for measuring reverse recovery characteristics (condition C) 98 5.20 Test current waveforms for various types of rectifier diodes under test in the circuit for measuring reverse recovery characteristics (for condition C) 100 5.21 trr test circuit for cond
36、ition D 103 5.22 Suggested board layout for low L1/R4 for condition D 104 5.23 Generalized reverse recovery waveforms for condition D 106 5.24 Capacitance test circuit 107 5.25 Typical transient thermal impedance characteristics 111 5.26 Current and voltage waveforms during thermal resistance test 1
37、15 5.27 Illustration of forward voltage waveform extrapolation 116 5.28 Thermal resistance test circuit (high current devices) 118 5.29 Thermal resistance test circuit (low current devices) 121 5.30 Current and voltage waveforms for heating pulse transient thermal impedance test 125 5.31 Current and
38、 voltage waveforms for transient thermal impedance test 127 5.32 Rectifier diode calibration curve 128 5.33 Basic test circuit for transient thermal impedance test method 130 5.34 Single-phase bridge 133 5.35 Three-phase bridge 134 5.36 Criteria to adjust VAC 136 6.1 Test current waveforms for vario
39、us types of rectifier diodes under test in the circuit for measuring reverse recovery characteristics 150 6.2a Fundamental rectifier circuits - resistive load 152 6.2b Fundamental rectifier circuits - resistive load 153 6.3a Fundamental rectifier circuits - inductive load 154 6.3b Fundamental rectif
40、ier circuits - inductive load 155 6.4 Surface flatness 157 6.5 Typical on-state current and corresponding junction and case temperature in a half-wave ac circuit 164 6.6 Free-air convection measurement 168 6.7 Forced convection measurement 169 Tables 1-1 Letter symbols for rectifier specifications 9
41、 4-1 Reference table of ratings and test methods 35 5-1a Reference table of characteristics, symbol, and test methods 61 5-1b Reference table of thermal characteristics, symbol, and test methods 61 5-2 Temperature measuring instruments 70 5-3 Reverse recovery condition B 94 5-4 Reverse recovery cond
42、ition D 101 5-5 Example for recording data 131 JEDEC Standard No. 282B.01 -vi- JEDEC Standard No. 282B.01 Page 1 SECTION 1: RECTIFIER DIODE DEFINITIONS AND LETTER SYMBOLS 1.1 Physical structure nomenclature anode: The p-type region from which the forward current flows within a semiconductor diode. N
43、OTE In Schottky diodes, usually the barrier metal replaces the p-type semiconductor region and the remaining semiconductor region is n-type; however, some Schottky diodes have been made with the barrier metal replacing the n-type semiconductor region, in which case the remaining semiconductor region
44、 is p-type. anode terminal (A, a): The terminal connected to the p-type region of the p-n junction or, when two or more p-n junctions are connected in series with the same polarity, to the extreme p-type region. NOTE See note to “anode”. cathode: The n-type region to which the forward current flows
45、within a semiconductor diode. NOTE See note to “anode”. cathode terminal (K, k): The terminal connected to the n-type region of the p-n junction or, when two or more p-n junctions are connected in series with the same polarity, to the extreme n-type region. NOTE See note to “anode”. electrode (of a
46、semiconductor device): An element that performs one or more functions of emitting or collecting electrons or holes, or of controlling their movements by an electric field. junction (in a semiconductor device) (general term): A transition region between semiconductor regions of different electrical p
47、roperties, or a physical region between a semiconductor region and a region of a different type; it is characterized by a potential barrier that impedes the movement of charge carriers from the region of higher concentration to the region with lower concentration. rectifier stack: An integral assemb
48、ly of two or more rectifier diodes, including its associated housing, and any integral mounting and cooling attachments. (See Figure 1.3.) rectifying junction: A junction in a semiconductor device that exhibits asymmetrical conductance. semiconductor device (general term): A device whose essential c
49、haracteristics are due to the flow of charge carriers within a semiconductor material. NOTE The definition includes devices whose essential characteristics are only in part due to the flow of charge carriers in a semiconductor but that are considered as semiconductor devices for the purposes of specification. JEDEC Standard No. 282B.01 Page 2 1.1 Physical structure nomenclature (contd) semiconductor rectifier diode: A semiconductor diode intended to be used for current and voltage rectification. (See Figures 1.1 and 1.2. For graphical symbol, see Figure 1.4.) NOTE 1 The term “semicon
