KS C 6520-2008 Components and materials of semiconductor process－Measurement of wear characteristics by plasma《半导体工艺零件的等离子耐磨性测试》.pdf

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4、orifice) . 4.3 10 3 Torr 5 %, 10 % . . 4.4 15 25 1 . 4.5 99.999 9 % CF4 Ar . 4.6 . . 5 1 . a) 400 mm, 500 mm 10 6Torr (TMP) . b) 20 cm . RF . RF 300 W . c) . 10 4Torr 1.5 mm, 300 mm . 2 . 1 RF QMS RF gate valveloas lockAr SF6CF4O2N2KS C 6520:2008 4 6 6.1 , , RF . 6.2 510 6 Torr , (leak) . 6.3 510 4T

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6、muir) . a) . b) . 7.2.3 a) 7.1.3.2 . b) . c) 3 . 7.3 7.3.1 . , . . . 7.3.2 . KS C 6520:2008 7 a) . b) . 7.3.3 ( ) . 7.3.3.1 . 7.3.3.2 a) (background level) . b) . RF . c) . d) . 3 . 7.3.4 . 7.3.4.1 . 7.3.4.2 a) (510 6Torr ) . b) . c) RF . d) . e) . 3 . KS C 6520:2008 8 8 8.1 . a) , , , b) 8.2 . a) b

7、) , , c) d) 8.3 . a) , , . (amu) . (logarithmic) . b) . . , , , , . c) . d) . . , , , , . e) 10 % . . f) . , , , , g) . 8.4 , . KS C 6520:2008 9 KS C 6520:2008 . 1 1.1 , , . , . . 1.2 “ ” . 1.3 a) KS . b) . 2 KS ( ) a) . 3 . 4 ( 1.) , , . KS C 6520:2008 10 5 5.1 ( 3.) , , , . . 5.2 ( 4.) . 5.3 ( 5.)

8、 , , . 5.4 ( 7.) . . 5.5 ( 8.) , . 6 135513 7017 (02)60094114 (02)600948878 http:/ KS C 6520:2008 KSKSKS SKSKS KSKS SKS KS SKS KSKS SKSKS KSKSKS Components and materials of semiconductor processMeasurement of wear characteristics by plasma ICS 31.080.00 Korean Agency for Technology and Standards http:/www.kats.go.kr