1、 KSKSKSKSKSKSKSK KSKSKS KSKSK KSKS KSK KS KS D 0258 KS D 0258:2012 2012 5 17 http:/www.kats.go.krKS D 0258:2012 : ( ) ( ) () () NS () ( ) : (http:/www.standard.go.kr) ： ：1989 11 28 ：2012 5 17 2012-0208 ： ： ( 02-509-7274) (http:/www.kats.go.kr). 10 5 , . KS D 0258:2012 i 1 1 2 1 3 .1 4 3 5 3 5.1 3 5.
2、2 3 5.3 .3 5.4 5 5.5 5 5.6 5 6 5 6.1 5 6.2 6 6.3 , 7 7 .8 KS D 0258:2012 .15 KS D 0258:2012 Test methods of crystalline defects in silicon by preferential etch techniques 1 . (單結晶 ) , 100 , 111 511 3 . . a) 0.01 cm , b) (epitaxial) c) a) b) 2 . . ( ) . KS M ISO 6353 2, 2： 1 KS M ISO 6353 3, 3： 2 3 .
3、 . 3.1 (dislocation) . . ( 1 ). 3.2 (lineage) . 1 . ( 2 ). KS D 0258:2012 2 3.3 (slip) , . . 111 110 . . 111 60 100 90 ( 3 4 ). 3.4 (striation) , 100 . (固液 ) . (dopant) , ( 4 ). 3.5 (swirl) . 100 ( 5 ). 3.6 (stacking fault) SF . (oxidation induced stacking fault： OSF) . 111 . 111 3 , 100 ( 6 ). 111
4、1 , 2 3 . 100 ( 7 ). 3.7 (shallow pits) 200 , ( 8 ). 3.8 (precipitates) . 100 ( 9 ). 3.9 (bulk micro defect) BMD , . 110 100 ( 10 ) KS D 0258:2012 3 3.10 (denuded zone) DZ ( 10 ) 4 . a) 6 5.3 a) . . b) . c) . 10 cm/min , 800 410 /min 1 0001 200 16 25 /min 800 10 cm/min . . , , , . 5 5.1 (233) . 5.2
5、1 . 1 % KS M ISO 6353 3 . 49 50 KS M ISO 6353 2 . 6062 6971 KS M ISO 6353 2 . 99100 5.3 a) 3, ( 6971 %) 5, 3 b) (I) 4 2 . 2 . KS D 0258:2012 4 4 3 . 2 (I) ( ) 61 % 70 % A 1 15 3 1 1 12.7 3 3.7 B 1 15 3 3 1 12.7 3 3.7 C 1 15 1 4 1 12.7 1 6.7 D 2 15 2 4 2 12.7 2 6.7 3 (II) ( ) ( ) SF OSF SF BMD ( ) a
6、A b b0.51.5 28 36 1.53 28 1.3 B 1520 26 1.52 28 48 24 28 0.6 C bb1.52 28 48 24 28 0.9 BOD D 815 210 b28 aa28 1.6 FZ a 1 2 . HF： K2Cr2O7(0.15 mol) 2： 1 . HF 60 mL, HNO3 30 mL, Cu(No3)2 2 g, CrO3(5 mol) 30 mL, CH3COOH 60 mL H2O 60 mL . b . 4 ： Ea1 2.5 10.5 AgNO3： 0.005 mol/LbFa3 5.1 7.9 Bi100 G 1 12.7
7、 6.3 Sb100 H 2 5.9 2 6.1 KI： 0.10.5 g/LcSb111 I 2 6.8 2 6.2 KI： 0.10.5 g/Lca E F . B 510 . b E 1 0.005 mol/L (AgNO3) 8 mL . c H 1 KI 0.10.5 g/L . c) (II) 0.02 cm 5 4 . 5 5 KS D 0258:2012 5 11 26 . 5 (II) min OSF, BMD( ), m/min ( ) E 1 3a1.4 3.3 . F 1 3 1.1 1.6 Bi100 G 1 3 1.3 2.5 H 1 5 0.5 1.8 KI .
8、. Sb100 I 1 6 0.8 1.9 a . 5.4 , , , . , , . . 5.5 a) 5.3 a) , 50 m . . . 5.6 1). b) 5.6 . c) , 1 . 1). 5.6 . 1 cm2 1.4 mL 3 cm . . (filtered) , , (spinner) 1). 6 6.1 1) 1 . . KS D 0258:2012 6 10 , 501 000 . 6.2 8 . a) 1 a) 8 mm 32)b) 1 b) 5 mm, R/2 52)c) 1 c) 5 mm, R/2 92)d) 1 d) 5 mm 2). e) 1 e) 10
9、0 111 2 . 111 , 30 100 , 45 . 100 , 111 5 mm . f) g) h) 5 mm 3 ： mm 1 2) , . a) b) c)d) e)KS D 0258:2012 7 6.3 , 6.3.1 a) 100 200 /cm2 . b) . 1) 6.2 a) 3 /cm2 . 2) 6.2 b) 5 /cm2 . 6.3.2 2 mm . 6.3.3 . 6.3.4 100 ( ) ( ) . 6.3.5 ( , ) , . a) 1) 100 200 . 2) 100 200 . b) . 1) 6.2 a) 3 /cm2 . 2) 6.2 c)
10、9 /cm2 . 3) 6.2 d) (全走査 ) /cm2 . . 4) 6.2 e) /cm2 . 5) 6.2 f) /cm2 . 6.3.6 . a) 2040 mm 100 mm 16 klx , . 4001000 . b) 1) ( , ). KS D 0258:2012 8 2) ( ) . 6.3.7 , . a) 100400 . b) . 1) 6.2 g) /cm2 . 2) 6.2 h) 3 /cm2 . 6.3.8 , . 7 , , , . a) 100, C 2 (1 000) b) 111, C 2 (1 000) 1 ( ) KS D 0258:2012 9
11、 FZ , D 10 2 a) 100, B 2 b) 111, A 2 3 KS D 0258:2012 10 111, D 10 4 100, A 4 , 4 5 a) 100, C 2 (1 000) b) OSF B 1 (1 000) 6 (OSF) KS D 0258:2012 11 a) 100, D 5 b) 111, D 10 7 B 8 (800) A 2 (1 000) 8 9 100, A 2 (100) 10 KS D 0258:2012 12 E 153)(500) E 153)(200) 11 OSF B 100 12 BMD B 100 F 2 (400) 13
12、 OSF B 100 F 2 (200) G 2 (400) 14 B 100 15 OSF B 100 3) . KS D 0258:2012 13 G 1.5 (200) H 3 (400) 16 BMD B 100 17 OSF Sb 100 H 3 (200) H 3 (500) 18 BMD Sb 100 19 OSF Sb 111 H 83)(320) H 4 (320) 20 BMD Sb 111 21 Sb 111 KS D 0258:2012 14 I 3 (400) I 3 (400) 22 OSF Sb 100 23 BMD Sb 100 I 3 (500) I 83)(
13、320) 24 OSF Sb 111 25 BMD Sb 111 I 4 (320) 26 Sb 111 KS D 0258:2012 15 KS D 0258:2012 . I 1989 Sirtl KS D 0258 1999 , . FZ . . . . . ASTM F 1810(Standard Test Method for Counting Preferentially Etched of Decorated Surface Defects in Silicon Wafers), F 1809(Standard Guide for Selection and Use of Etc
14、hing Solutions to Delineate Structual Defects in Silicon) . DIN 50434(Determination of the Crystallographic Perfection of Monocrystalline silicon by preferential Etch Techniques on 111 and 100 surfaces) JIS H 0609(Test method of crystalline defects on silicon by preferential ecth techniques) . Sirtl
15、 , Schimmel . II . 1 0.01 cm . , . 2 ( 3.) . 3 ( 4.) a) 111 100 , 6 . 3 . KS D 0258:2012 16 b) IC, MOS-IC, CMOS-IC . 1 000 6 , 1 100 12 , 1 200 1 . . 4 ( 5.) 4.1 ( 5.1) (233) . 4.2 ( 5.3) a) CP4 . b) (I) 4 3 . . c) (II) 4 5 . . 4.3 ( 5.6) B 12/OSF 5 L 150 mm 10 . 1 cm2 1.36 mL, 1.41 mL . 1.4 mL . AS
16、TM F 416 Schimmel 1 cm2 1.4 mL . 5 ( 6.2) a), b), c) d) . e) ASTM F 47, F 80, F 416 . 30 111 , 45 100 2 9 . F 416 100 /cm2 100 . . 5.1 ( 6.3) , . . 0.02 cm . Mayer . . 153787 1 92 3(13) (02)26240114 (02)262401489 http:/ Korean Agency for Technology and Standards http:/www.kats.go.kr KS D 0258:2012 KSKSKS SKSKS KSKS SKS KS SKS KSKS SKSKS KSKSKS Test methods of crystalline defects in silicon by preferential etch techniques ICS 77.120.99
