1、MILITARY HANDBOOK IONlZlNQ DOSE AND NElRRON HARDNESS ASSURANCE OUIDEUNES FOR MICROCIRCUITS AND SEMICONDUCTOR DEVICES MIL-HDBK-814 9999970 0192758 419 z 9 Mmiq MIGHDBK.1814 8 FEBRUARY 1994 AMSC NIA FSC 59GP DISnBUHONAENTA. “-mmu Provided by IHSNot for ResaleNo reproduction or networking permitted wit
2、hout license from IHS-,-,-MIL-HDBK- 8 14 Ionizing Radiation and Neutron Hardness Assurance Guidelines for Microcircuits and Semiconductor Devices 1. This standardization handbook was developed by the Department of Defense in accordance with established procedures and is approved for use by all depar
3、tments and agencies of the Department of Defense. 2. This publication was approved 8 FEBRUARY 1994 for printing and inclusion in the military standardization handbook series. 3. Every effort has been made to reflect the latest information on nuclear survivability procedures. It is the intent to revi
4、ew this handbook periodically to assure its completeness and currency. 4. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Electronics Supply Center, ATTN: DESC-ECC, 1507 Wilmington Pike,
5、 Dayton, OH 45444-5270, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. ii Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-II MIL-HDBK-814 FOREWORD The purpose of this hand
6、book is to establish a guide to the application of piecepart hardness assurance programs for the effects of ionizing radiation (total) dose and neutron damage to semiconductor electronics. These guidelines are addressed to both program managers and designers of radiation hardened electronics systems
7、. This handbook is a revision and combination of the earlier MIL-HDBK-279 and MIL-HDBK-280. iii Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-PARAGRAPH 1 . 1.1 1.2 1.3 2 . 2.1 3 . 3.1 3.2 4 . 4.1 5 . 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 6.0 MIL-HDBK-814
8、 CONTENTS PAGE SCOPE 1 Background . 1 Overview 1 Limitations . 2 REFERENCED DOCUMENTS 2 Government documents 2 DEFINITIONS. ACRONYMS AND SYMBOLS . -3 Definitions . 3 Acronyms and symbols 8 Radiation environments and effects . 10 GENERAL HARDNESS ASSURANCE REQUIREMENTS . 10 DETAILED HARDNESS ASSURANC
9、E REQUIREMENTS . -16 Radiation design hardening . 16 Hardness assurance. maintenance. and surveillance . . 25 Radiation response measurements . 29 Design margins and hardness critical categories . 34 DMBPmethod . 45 PCCmethod . 48 Combined DMBP/PCC methods 58 Hardness assurance testing . 58 Referenc
10、es . 75 APPENDIX Statistical techniques for hardness assurance . 79 FIGURES 1 . MOSFET ionizing dose annealing response . 13 2 . Typical system design hardening and HA flow diagram . 17 3 . Cumulative plot on normal probability paper . 34 4 . Relationship of factors used in DM determination 37 5 . R
11、elationship between design margin based categories . 39 6 . HCI categorization flow chart 43 7 . Piecepart hardness assurance flow chart . 44 8 . Bias current as a function of dose . 47 9 . ICBO vs dose for 2N3637 transistors . 56 10 . Probability distribution function 81 iv Provided by IHSNot for R
12、esaleNo reproduction or networking permitted without license from IHS-,-,-FIGURES MIL-HDBK-814 CONTENTS . Continued . PAGE 11 . Cumulative distribution function 81 12 . Normal probability paper 86 13 . One-sided tolerance limit 92 14 . Hypothetical shipment with 5 wafer lots . 98 15 . Ant-function o
13、f a normal distribution 104 TABLES I . Radiation hardness assurance levels . 22 II . Qualification and production procurement test sample guide . 41 III . Relationship between HCCs and RDMs . 46 IV . LM108 Op amp failure levels . 48 V . PCC example values . 52 VI . Fluence-to-failure for twenty 2N22
14、22 transistors (sampled from two different lots) . 55 VI1 . 2N3637 Transistor parameter values . 57 VI11 . Approximate neutron to gamma ratios . 62 IXA . One-sided tolerance limits. KTL . 93 IXB . One-sided tolerance limits. KTL (continued) . 94 IXC . One-sided tolerance limits. KTL (continued) . 95
15、 IXD . One-sided tolerance limits. KTL (continued) . 96 IXE . One-sided tolerance limits. KTL (continued) . 97 XA . Values for calculating approximate one-sided tolerance limits 101 XB Values for calculating approximate one-sided tolerance limits (continued) 102 xc . Values for calculating approxima
16、te one-sided tolerance limits (continued) 103 XI . The anti-unction of the standard normal distribution . 104 V Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-HDBK-814 1. SCOPE 1.1 Backaround. Systems that must operate in a radiation environment
17、 have to be designed to be survivable (hard) to radiation stress levels specified for them. In addition to design hardening, a Hardness Assurance (HA) program must also be developed during the system design phase for implementation in the production phase. The HA program consists of the production c
18、ontrols and tests which assure that each end product, i.e., delivered system, meets the hardened design specifications and requirements. This handbook is a revision and combination of the earlier MIL-HDBK-279 (see 6.1) and MIL-HDBK-280 (see 6.2) which in turn were the results of earlier work perform
19、ed under the auspices of the Defense Nuclear Agency (DNA) see 6.3 and 6.4). 1.2 Overview. Many methods and techniques may be employed at the various electronics design levels (system, subsystem, module and part) to achieve system survivability. This handbook provides HA techniques and procedures app
20、licable to neutron fluence and ionizing radiation dose permsnent damage effects on electronic pieceparts. (This damage is considered permanent even though eome annealing may occur.) Sufficient information is provided to relate part level HA to the overall systems HA program. Complete procedures are
21、provided for the application of two piecepart HA methods, the Design Margin Breakpoint (DMBP) method and the Parts Categorization Criterion (PCC) method. The DMBP method does not provide a mathematical basis from which statistical survivability inferences may be drawn for the individual part types.
22、There is also a risk involved in that the device response dispersion is not taken into account. The PCC method is mathematically rigorous and applies single-sided cumulative distribution statistics with relationship to survivability requirements and sample size. The PCC method is somewhat more diffi
23、cult to apply than the DMBP method, but is applicable to any system and provides a sound statistical basis for piecepart survivability estimates. Both methods apply defined design margins and categorization procedures for piecepart control and testing. 1.2.1 Objective. The intent of this document is
24、 to provide the methodology and procedures applicable to the DMBP and PCC electronic pieceparts radiation HA methods. Both methods have been applied to systems currently in production or in the DoD inventory. An important goal of this handbook is to promote the standardization of HA procedures. Stan
25、dardization is of great benefit in establishing program adequacy and reducing costs in that new and untried procedures need not be developed for each systems program. Having a basic, standardized program is also important to maintenance organizations where numerous systems must be maintained over th
26、eir operational lifetimes. 1.2.2 Scope. This document addresses the piecepart level system engineering approach to the implementation of an HA program applicable to both neutron and ionizing radiation (ionizing dose) permanent damage derived from nuclear weapon or natural space environments. Recomme
27、ndations are included for systems with low to moderate requirements (DMBP method) and for moderate to severe requirements (PCC method). A system of parts categorization based on design margin is presented which provides consistency in parts 1 Provided by IHSNot for ResaleNo reproduction or networkin
28、g permitted without license from IHS-,-,-MIL-HDBK-BLY . “ MIL-HDBK-814 qualification procedures and control requirements. Information is provided on sampling and sample sizes, test facilities, qualification and lot acceptance testing, and documentation requirements. Recommendations are made for the
29、use of pieceparts available under the Government sponsored Radiation Hardness Assured (RHA) device program. Information is also included on peripheral subject matter that is necessary or helpful to an understanding of these guidelines. 1.2.3 Users. This handbook is directed primarily toward the syst
30、ems contractors, Systems Program Offices (SPOs) and Program Executive Offices (PEOs) that are responsible for developing electronic equipment which is hardened to specified radiation environments and has a corresponding HA program. 1.3 Limitations. These guidelines address only permanent or semiperm
31、anent damage to electronic pieceparts resulting from ionizing radiation dose or neutron displacement damage. It does not deal with transient effects occurring as a result of highly ionizing, short duration pulses of gamma or x rays, (i.e., prompt dose rate effects). 1.3.1 DMBP limitations. It should
32、 be noted that the DMBP method described herein, though initially based on statistical considerations, is not mathematically rigorous. The method is related to the mean of a sample distribution rather than the dispersion or standard deviation of the particular,test sample. Though the recommended bre
33、akpoints are generally considered conservative, a risk factor must be assumed since the actual deviation about the mean is not taken into consideration for each device type. The method, however, is particularly useful when the specification requirements (radiation stress levels and survivability and
34、 confidence factors) are moderate. 2. REFERENCED DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards and handbooks. The following specifications, standards and handbooks of the latest issue (see Department of Defense Index of Specifications and Standards - DODISS) form a part of this
35、 specification. SPECIFICATIONS MILITARY MIL-S-19500 - MIL-H-38534 - MIL-1-38535 - Semiconductor Devices, General Specification for Hybrid (Custom) Microcircuits, General Specification for Integrated Circuits (Microcircuits) Manufacturing, General Specification for 2 Provided by IHSNot for ResaleNo r
36、eproduction or networking permitted without license from IHS-,-,-MIL-HDBK-814 STANDARDS MILITARY MIL-STD-100 MIL-STD-105 MIL-STD-202 MIL-STD-414 MIL-STD-454 MIL-STD-750 MIL-STD-883 MIL-STD-1546 MIL-STD-1547 MIL-STD-1562 HANDBOOKS MILITARY MIL-HDBK-339 MIL-HDBK-780 MIL-HDBK-816 Engineering Drawing Pr
37、actices Sampling Procedures and Tables for Inspection by Attributes Test Method for Electronics and Electrical Component Parts Sampling Procedures and Tables for Inspection by Variables for Percent Defective Standard General Requirements for Electronic Equipment Test Methods for Semiconductor Device
38、s Test Methods and Procedures for Microcircuits Parts, Materials, and Process Control Program for Space Launch Vehicles Electronic Parts, Materials and Processes for Space Launch Vehicles Lists of Standard Microcircuits Custom Large Scale Integrated Circuit Development and Acquisition for Space Vehi
39、cles Standardized Military Drawings Guidelines for Developing Specifications for Radiation Hardness Assured Devices. (Copies of specifications, standards, handbooks, drawings and publications required by manufacturers in connection with specific acquisition functions should be obtained from the cont
40、racting activity or as directed by the contracting officer.) 3. DEFINITIONS, ACRONYMS AND SYMBOLS 3.1 Definitions. In addition to the definitions specified in MIL-1-38535, appendix A, the following definitions apply: 3.1.1 Characterization testinq. - See Qualification Testing, 3.1.28. 3.1.2 Confiden
41、ce level. (C) is the chance of rejecting a lot where there is less than probability P that any part from the lot can pass the test conditions. 3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-HDBK-814 3.1.3 Cumulative proportion. (PDIST) is the
42、fraction or proportion of a probability distribution which is below a given upper limit (or above a given lower limit). POIST thus corresponds to the probability that a parameter is below a given upper limit (or above a given lower limit). The cumulative distribution function is an example (see appe
43、ndix 50.1.2.2). 3.1.4 Desian marain breakpoint (DMBP) method. A method of categorizing electronic pieceparts for control purposes. The piecepart design margin is compared to given DMP values to categorize the part type and, in turn, the category dictate6 the control requirements. 3.1.5 Device. A gen
44、eral term frequently used interchangeably with piecepart. 3.1.6 In-flux testinq. The test device electrical parameter measurements are made in-situ while the test device is in the radiation field. 3.1.7 In-situ testing. The test device electrical parameter measurements are made during or before and
45、after irradiation, while the test device remains in the irradiation location. 3.1.8 Ionizina radiation dose. Ionizing radiation dose accumulated over a period of time. A terminology used interchangeably with ionizing dose but considered a more appropriate expression to relate implied cumulative dose
46、. 3.1.9 m. The population of parts from which a sample has been taken (see MIL-1-38535, appendix A). 3.1.10 Lot acceptance testina (LAT)-. LAT i8 the testing of a sample of parts from a procurement lot to determine if the lot is acceptable. LAT refers to radiation testing, or quality conformance ins
47、pection. 3.1.11 Lot size. (N) is the number of parts in the lot before the test sample has been removed. 3.1.12 Mean parameter value, loqnormal distribution. 3.1.13 Mean radiation level to failure, loqnormal distribution. 4 Provided by IHSNot for ResaleNo reproduction or networking permitted without
48、 license from IHS-,-,-MIL-HDBK-814 3.1.14 Measured loqarithmic mean for PARm. 3.1.15 Measured logarithmic mean for RFAIL. * 3.1.17 Measured loaarithmic standard deviation for RFAIL. 3.1.18 Measured normal mean for PARm. 3.1.19 Measured normal standard deviation for PAR. * Expressions with an “i“ sub
49、script are the parameter value measurements for the ith device. 5 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-HDBK-814 W 9999970 0192768 368 = MIL-HDBK-814 3.1.20 Neutron fluence - is the total number of neutrons per square centimeter incident at the position of interest. For neutron effects on silicon electronics, the flu
