1、 IEC 60747-7 Edition 3.0 2010-12 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Discrete devices Part 7: Bipolar transistors Dispositifs semiconducteurs Dispositifs discrets Partie 7: Transistors bipolaires IEC 60747-7:2010 THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2010 IE
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16、2 11 Fax: +41 22 919 03 00 IEC 60747-7 Edition 3.0 2010-12 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Discrete devices Part 7: Bipolar transistors Dispositifs semiconducteurs Dispositifs discrets Partie 7: Transistors bipolaires INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMIS
17、SION ELECTROTECHNIQUE INTERNATIONALE XD ICS 31.080.30 PRICE CODE CODE PRIX ISBN 978-2-88912-311-7 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale 2 60747-7 IEC:2010 CONTENTS FORE WORD 6 1 Scop e 8 2 Normative referen
18、ces 8 3 Terms and definitions 8 3.1 Specific functional regions 8 3.2 Resistor biased transistor . 9 3.3 Terms related to ratings and characteristics 10 4 Letter symbols 13 4.1 General . 13 4.2 Additional subscripts 13 4.3 List of letter symbols 13 4.3.1 General 13 4.3.2 Voltages . 14 4.3.3 Currents
19、 . 15 4.3.4 Powers. 15 4.3.5 Electrical parameters . 15 4.3.6 Frequency parameters . 19 4.3.7 Switching parameters 20 4.3.8 Energies 21 4.3.9 Sundry quantities 21 4.3.10 Matched-pair bipolar transistors 22 4.3.11 Resistor biased transistor. 22 5 Essential ratings and characteristics . 22 5.1 General
20、 . 22 5.2 Small signal transistors . 22 5.2.1 Ratings (limiting values) . 22 5.2.2 Characteristics 23 5.3 Linear power transistors . 24 5.3.1 Ratings (limiting values) . 24 5.3.2 Characteristics 25 5.4 High-frequency power transistors for amplifier and oscillator applications 26 5.4.1 Ratings (limit
21、ing values) . 26 5.4.2 Characteristics 27 5.5 Switching transistors 29 5.5.1 Ratings (limiting values) . 29 5.5.2 Characteristics 31 5.6 Resistor biased transistors 33 5.6.1 Ratings 33 5.6.2 Characteristics 34 6 Measuring methods 34 6.1 General . 34 6.2 Verification of ratings (limiting values) 35 6
22、.2.1 Acceptance criteria 35 6.2.2 Collector current . 35 6.2.3 Peak collector current 36 6.2.4 Base current . 36 60747-7 IEC:2010 3 6.2.5 Peak base current . 37 6.2.6 Collector-base voltage . 38 6.2.7 Collector-emitter voltage, output voltage 39 6.2.8 Emitter-base voltage, Input voltage . 39 6.2.9 S
23、afe operating area (SOA) . 40 6.2.10 Output current (I O ) 43 6.2.11 Collector-emitter sustaining voltage 44 6.3 Methods of measurement 46 6.3.1 Turn-on time intervals and turn-on energy with inductive road 46 6.3.2 Turn-off time intervals and turn-off energy with inductive road . 47 6.3.3 Collector
24、-emitter cut-off currents (d.c. method) . 49 6.3.4 Collector-base cut-off current (d.c. method) . 49 6.3.5 Emitter-base cut-off current (d.c. method) 50 6.3.6 Collector-emitter saturation voltage . 50 6.3.7 Base-emitter saturation voltage 52 6.3.8 Base-emitter voltage (d.c. method) . 53 6.3.9 Capaci
25、tances 54 6.3.10 Hybrid parameters (small-signal and large-signal) 57 6.3.11 Thermal resistance 64 6.3.12 Switching times with resistive road 69 6.3.13 High-frequency parameters (f T , ye, s) 71 6.3.14 Noise (F) 81 6.3.15 Measuring methods for matched-pair bipolar transistors 87 6.3.16 Measuring Met
26、hods for resistor biased transistors 90 7 Acceptance and reliability 94 7.1 General requirements . 94 7.2 Specific requirements . 94 7.2.1 List of endurance tests. 94 7.2.2 Conditions for endurance tests . 94 7.2.3 Acceptance-defining characteristics and acceptance criteria for reliability tests 94
27、7.3 Endurance and reliability test methods . 95 7.3.1 High temperature blocking (HTRB) 95 7.3.2 Intermittent operating life . 96 7.4 Type tests and routine tests 97 7.4.1 Type tests 97 7.4.2 Routine tests 97 Annex A (informative) Determination of the SOA . 99 Figure 1 Resistor biased transistor grap
28、hical symbol . 9 Figure 2 Modified hybrid p equivalent circuit . 19 Figure 3 Test circuit for collector current 35 Figure 4 Test circuit for peak collector current 36 Figure 5 Test circuit for base current . 37 Figure 6 Test circuit for peak base current 37 Figure 7 Circuit for testing the collector
29、-base voltage V CBO , V CBS , V CBR , V CBX38 Figure 8 Circuit for testing the collector-emitter voltage V CEO , V CES , V CER , V CEX, V O39 Figure 9 Circuit for testing the emitter-base voltages V EBOand input voltage V I. 40 4 60747-7 IEC:2010 Figure 10 Test circuit of reverse bias safe operating
30、 area (RBSOA) 40 Figure 11 Waveforms and curves for RBSOA 41 Figure 12 Circuit for testing safe operating pulse duration at load short circuit (SCSOA) . 42 Figure 13 Waveforms of base current I B , collector current I Cand voltage V CEduring load short circuit condition SCSOA . 43 Figure 14 Circuit
31、diagram for verifying the output current I O. 44 Figure 15 Basic circuit for the measurement of the collector-emitter sustaining voltage 44 Figure 16 I Cversus V CEcharacteristic . 45 Figure 17 Circuit diagram and waveforms . 47 Figure 18 Waveforms during turn-off intervals . 48 Figure 19 Basic circ
32、uit for the measurement of collector-emitter cut-off currents. 49 Figure 20 Basic circuit for the measurement of the collector-emitter saturation voltage (d.c. method) 50 Figure 21 Basic circuit for the measurement of the collector-emitter saturation voltage (pulse method) 51 Figure 22 Basic circuit
33、 for the measurement of the base-emitter saturation voltage (d.c. method) . 52 Figure 23 Basic circuit for the measurement of the base-emitter saturation voltage (pulse methods) . 53 Figure 24 Base circuit for the measurement of base-emitter voltage (d.c. method) 54 Figure 25 Basic circuit for the m
34、easurement of the common-base output capacitance using a two-terminal bridge 55 Figure 26 Basic circuit for the measurement of C CBusing a three-terminal bridge 56 Figure 27 Basic circuit for the measurement of C cbusing a three-terminal bridge . 57 Figure 28 Basic circuit for the measurement of h 1
35、1eand h 21e. 58 Figure 29 Basic circuit for the measurement of h 12e59 Figure 30 Basic circuit for the measurement of h 22e61 Figure 31 Basic circuit for the measurement of h 22b62 Figure 32 Basic circuit for the measurement of h 21E63 Figure 33 Basic test circuit for measuring the thermal resistanc
36、e of NPN transistors . 66 Figure 34 Emitter current (I E ) versus emitter-base voltage (V EB ) for the junction temperatures T j (1)and T j (2)66 Figure 35 I Eand V EBchange with time . 67 Figure 36 Circuit diagram . 69 Figure 37 Switching times . 70 Figure 38 Circuit for the measurement of the tran
37、sition frequency . 71 Figure 39 Circuit for the measurement of complex common-emitter y parameters . 73 Figure 40 Three-pole circuit for the measurement of y 11e. 74 Figure 41 Three-pole circuit for the measurement of y 22e. 74 Figure 42 Three-pole circuit for the measurement of y 21e. 75 Figure 43
38、Three-pole circuit for the measurement of y 12e. 76 Figure 44 Block diagram of the circuit for the measurement of s 11and s 22parameters 77 60747-7 IEC:2010 5 Figure 45 Block diagram of the circuit for the measurement of s 12and s 21parameters 79 Figure 46 Basic block diagram for the measurement of
39、the noise figure . 81 Figure 47 Basic circuit for the measurement of the noise figure up to 3 MHz 83 Figure 48 Basic circuit for the measurement of the noise figure from 3 MHz to 300 MHz 84 Figure 49 Basic circuit for the measurement of the noise figure below 1 kHz (signal generator method) 86 Figur
40、e 50 Basic circuit for the measurement of h 21E1 /h 21E288 Figure 51 Matching of the collector current . 90 Figure 52 Circuit diagram for measuring the on-state input voltage V I(on) ,and off- state input voltage V I(off). 90 Figure 53 Circuit diagram for measuring the bias resistor r 1. 91 Figure 5
41、4 Circuit diagram and measuring the bias resistor r 292 Figure 55 Circuit diagram for measuring the on-state output voltage V O(on)93 Figure 56 Circuit diagram for measuring the off-sate output current I O(off)94 Figure 57 Test circuit for high temperature blocking 96 Figure 58 Circuit for Intermitt
42、ent operating life 97 Figure 59 Expected number of cycles versus temperature rise DT vj. 97 Figure A.1 Typical DV EBversus collector-base (V CB ) characteristics . 99 Figure A.2 Typical safe operating area . 100 Table 1 Acceptance defining characteristics and acceptance criteria . 35 Table 2 Accepta
43、nce defining characteristics suitable for resistor biased transistor 35 Table 3 Acceptance defining characteristics after endurance tests for bipolar transistors . 95 Table 4 Minimum items of type and routine tests for transistors when applicable 98 6 60747-7 IEC:2010 INTERNATIONAL ELECTROTECHNICAL
44、COMMISSION _ SEMICONDUCTOR DEVICES DISCRETE DEVICES Part 7: Bipolar transistors FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promo
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