1、 IEC 62047-26 Edition1.0 2016-01 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 26: Description and measurement methods for micro trench and needle structures Dispositifs semiconducteurs Dispositifs microlectromcaniques Partie 26: Description e
2、t mthodes de mesure pour structures de microtranches et de microaiguille IEC 62047-26:2016-01(en-fr) colour inside THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2016 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilize
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20、Micro-electromechanical devices Part 26: Description and measurement methods for micro trench and needle structures Dispositifs semiconducteurs Dispositifs microlectromcaniques Partie 26: Description et mthodes de mesure pour structures de microtranches et de microaiguille INTERNATIONAL ELECTROTECHN
21、ICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE ICS 31.080.99 ISBN 978-2-8322-3122-7 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale Warning! Make sure that you obtained this publication from an authorized
22、 distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agr. colour inside 2 IEC 62047-26:2016 IEC 2016 CONTENTS FOREWORD . 4 1 Scope 6 2 Normative references 6 3 Terms and definitions 6 4 Description of trench structures in a micrometer scale . 7 4.
23、1 General . 7 4.2 Symbols and designations 7 4.3 Description . 9 5 Description of needle structures in a micrometer scale 9 5.1 General . 9 5.2 Symbols and designations 9 5.3 Description . 10 6 Measurement method 10 Annex A (informative) Examples of measurement for trench and needle structures in a
24、micrometer scale . 11 A.1 General . 11 A.2 Measurement for depth of trench 11 A.2.1 Field emission type scanning electron microscopy . 11 A.2.2 Coherence scanning interferometer (CSI) 12 A.2.3 Stylus surface profiler 14 A.2.4 Confocal laser scanning microscopy 16 A.2.5 Atomic force microscopy 17 A.3
25、 Measurement for width of wall and trench at the upper surface of trench 18 A.3.1 Field emission type scanning electron microscopy . 18 A.3.2 Coherence scanning interferometer . 19 A.3.3 Stylus surface profiler 19 A.3.4 Confocal laser scanning microscopy 19 A.3.5 Optical microscopy 20 A.4 Measuremen
26、t for side wall angle of trench by field emission type scanning electron microscopy 20 A.4.1 Principle of measurement 20 A.4.2 Preparation of sample 21 A.4.3 Procedure of measurement 21 A.4.4 Measurable range 21 A.5 Measurement for wall and trench width at the bottom of trench by field emission type
27、 scanning ele microscopy . 21 A.5.1 Principle of measurement 21 A.5.2 Preparation of sample 21 A.5.3 Procedure of measurement 21 A.5.4 Measurable range 21 A.6 Measurement for geometry of needle 21 A.6.1 Field emission type scanning electron microscopy . 21 A.6.2 Atomic force microscopy 23 Annex B (i
28、nformative) Uncertainty in dimensional measurement . 25 B.1 General . 25 B.2 Basic concepts 25 IEC 62047-26:2016 IEC 2016 3 B.3 Example of evaluating uncertainty of the average depth of trench . 25 B.3.1 Sample and measured data for evaluating uncertainty . 25 B.3.2 Source of uncertainty . 26 B.3.3
29、Type A evaluation of standard uncertainty . 26 B.3.4 Type B evaluation of standard uncertainty . 26 B.3.5 Combined standard uncertainty . 26 B.3.6 Expanded uncertainty and result 26 B.3.7 Budget table 26 Bibliography 28 Figure 1 Schematic of example for trench structure in a micrometer scale and its
30、 cross section 7 Figure 2 Cross section of trench structure in a micrometer scale 8 Figure 3 Cross section of trench structure in a micrometer scale fabricated by a deep-reactive ion etching process with repeated deposition and etching of silicon 8 Figure 4 Schematic of typical needle structures for
31、med of three and four faces . 9 Figure 5 Front, side and top views of typical needle structures. 10 Figure A.1 FE-SEM image of trench structure with 5 m-wide wall and 5 m-wide trench . 12 Figure A.2 Schematic of CSI microscope comprising an equal-light-path interferometer . 13 Figure A.3 Measurabili
32、ty for depth of trench structure with a depth of D and a width of W Tuusing a stylus surface profiler . 16 Figure A.4 Relationship between shape of AFM probe tip and trench structure 18 Figure A.5 Front, side and top views of typical needle structures tilted to the back side with 30 . 23 Figure A.6
33、Relationship between shapes of AFM probe tip and needle structure 24 Table 1 Symbols and designations of trench structure in a micrometer scale . 8 Table 2 Symbols and designations of needle structure in a micrometer scale . 10 Table A.1 Example of measured data of trench depth 12 Table A.2 CSI magn
34、ification (objective lens/ imaging lens) for measurement of all trench . 14 Table B.1 Example of measured data of trench depth 25 Table B.2 Estimation of uncertainty in measurement 27 4 IEC 62047-26:2016 IEC 2016 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANIC
35、AL DEVICES Part 26: Description and measurement methods for micro trench and needle structures FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of
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46、-26 has been prepared by subcommittee 47F: Microelectromechanical systems, of IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Report on voting 47F/233/FDIS 47F/239/RVD Full information on the voting for the approval of this stand
47、ard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. IEC 62047-26:2016 IEC 2016 5 A list of all parts in the IEC 62047 series, published under the general title Semiconductor devices Micro-electrom
48、echanical devices, can be found on the IEC website. The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication
49、 will be reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document using a colour printer. 6 IEC 62047-26:2016 IEC 2016 SEMICONDUCTOR DEVICES MI
