1、 IEC 62276 Edition 3.0 2016-10 INTERNATIONAL STANDARD Single crystal wafers for surface acoustic wave (SAW) device applications Specifications and measuring methods IEC 62276:2016-10(en) THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2016 IEC, Geneva, Switzerland All rights reserved. Unless other
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10、csc If you wish to give us your feedback on this publication or need further assistance, please contact the Customer Service Centre: csciec.ch. IEC 62276 Edition 3.0 2016-10 INTERNATIONAL STANDARD Single crystal wafers for surface acoustic wave (SAW) device applications Specifications and measuring
11、methods INTERNATIONAL ELECTROTECHNICAL COMMISSION ICS 31.140 ISBN 978-2-8322-3691-8 Registered trademark of the International Electrotechnical Commission Warning! Make sure that you obtained this publication from an authorized distributor. 2 IEC 62276:2016 IEC 2016 CONTENTS FOREWORD . 5 INTRODUCTION
12、 . 7 1 Scope 8 2 Normative references 8 3 Terms and definitions 8 3.1 Single crystals for SAW wafer . 8 3.2 Terms and definitions related to LN and LT crystals 9 3.3 Terms and definitions related to all crystals 9 3.4 Flatness 10 3.5 Definitions of appearance defects . 12 3.6 Other terms and definit
13、ions . 13 4 Requirements 14 4.1 Material specification 14 4.1.1 Synthetic quartz crystal . 14 4.1.2 LN . 15 4.1.3 LT 15 4.1.4 LBO, LGS 15 4.2 Wafer specifications 15 4.2.1 General . 15 4.2.2 Diameters and tolerances 15 4.2.3 Thickness and tolerance 15 4.2.4 Orientation flat . 15 4.2.5 Secondary flat
14、 . 16 4.2.6 Back surface roughness 16 4.2.7 Warp . 16 4.2.8 TV5 or TTV 16 4.2.9 Front (propagation) surface finish 17 4.2.10 Front surface defects . 17 4.2.11 Surface orientation tolerance . 18 4.2.12 Inclusions 18 4.2.13 Etch channel number and position of seed for quartz wafer . 18 4.2.14 Bevel .
15、18 4.2.15 Curie temperature and tolerance 18 4.2.16 Lattice constant . 18 4.2.17 Bulk resistivity (conductivity) for reduced LN and LT 19 5 Sampling plan 19 5.1 General . 19 5.2 Sampling. 19 5.3 Sampling frequency 19 5.4 Inspection of whole population 19 6 Test methods . 19 6.1 Diameter . 19 6.2 Thi
16、ckness . 20 6.3 Dimension of OF . 20 6.4 Orientation of OF 20 6.5 TV5 . 20 IEC 62276:2016 IEC 2016 3 6.6 Warp . 20 6.7 TTV 20 6.8 Front surface defects 20 6.9 Inclusions . 20 6.10 Back surface roughness 20 6.11 Orientation 20 6.12 Curie temperature . 20 6.13 Lattice constant 20 6.14 Bulk resistivity
17、 . 21 7 Identification, labelling, packaging, delivery condition 21 7.1 Packaging . 21 7.2 Labelling and identification 21 7.3 Delivery condition . 21 8 Measurement of Curie temperature 21 8.1 General . 21 8.2 DTA method 21 8.3 Dielectric constant method 22 9 Measurement of lattice constant (Bond me
18、thod) 23 10 Measurement of face angle by X-ray 24 10.1 Measurement principle 24 10.2 Measurement method . 25 10.3 Measuring surface orientation of wafer 25 10.4 Measuring OF flat orientation 25 10.5 Typical wafer orientations and reference planes 25 11 Measurement of bulk resistivity 26 11.1 Resista
19、nce measurement of a wafer . 26 11.2 Electrode 27 11.3 Bulk resistivity . 27 12 Visual inspections Front surface inspection method 27 Annex A (normative) Expression using Euler angle description for piezoelectric single crystals . 29 A.1 Wafer orientation using Euler angle description 29 Annex B (in
20、formative) Manufacturing process for SAW wafers . 32 B.1 Crystal growth methods 32 B.1.1 Czochralski growth method 32 B.1.2 Vertical Bridgman method 34 B.2 Standard mechanical wafer manufacturing 35 B.2.1 Process flow-chart . 35 B.2.2 Cutting both ends and cylindrical grinding 36 B.2.3 Marking orien
21、tation 37 B.2.4 Slicing . 37 B.2.5 Double-sided lapping . 37 B.2.6 Bevelling (edge rounding) 37 B.2.7 Mirror polishing 37 Bibliography 38 Figure 1 Wafer sketch and measurement points for TV5 determination 10 Figure 2 Schematic diagram of TTV . 11 4 IEC 62276:2016 IEC 2016 Figure 3 Schematic diagram
22、of warp 11 Figure 4 Schematic diagram of Sori . 11 Figure 5 Example of site distribution for LTV measurement 12 Figure 6 LTV value of each site 12 Figure 7 Schematic of a DTA system . 22 Figure 8 Schematic of a dielectric constant measurement system 22 Figure 9 The Bond method . 24 Figure 10 Measure
23、ment method by X-ray . 24 Figure 11 Relationship between cut angle and lattice planes . 25 Figure 12 Measuring circuit 26 Figure 13 Resistance measuring equipment . 26 Figure 14 Shape of electrode . 27 Figure A.1 Definition of Euler angles to rotate coordinate system (X, Y, Z) onto ( 3 2 1 , , x x x
24、 ) 29 Figure A.2 SAW wafer coordinate system 30 Figure A.3 Relationship between the crystal axes, Euler angles, and SAW orientation for some wafer orientations . 31 Figure B.1 Czochralski crystal growth method 32 Figure B.2 Example of non-uniformity in crystals grown from different starting melt com
25、positions . 34 Figure B.3 Schematic of a Vertical Bridgman furnace and example of temperature distribution 35 Figure B.4 Process flow-chart 36 Table 1 Description of wafer orientations . 14 Table 2 Roughness, warp, TV5 and TTV specification limits 17 Table 3 Maximum number of etch channels in seed p
26、osition 18 Table 4 Crystal planes to determine surface and OF orientations . 25 Table 5 Electrode size . 27 Table A.1 Selected SAW substrate orientations and corresponding Euler angles . 30 IEC 62276:2016 IEC 2016 5 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SINGLE CRYSTAL WAFERS FOR SURFACE ACOUST
27、IC WAVE (SAW) DEVICE APPLICATIONS SPECIFICATIONS AND MEASURING METHODS FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote intern
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37、t application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62276 has been prepared by IE
38、C technical committee 49: Piezoelectric, dielectric and electrostatic devices and associated materials for frequency control, selection and detection. This third edition cancels and replaces the second edition of IEC 62276 published in 2012. It constitutes a technical revision. This edition includes
39、 the following significant technical changes with respect to the previous edition: Corrections of Euler angle indications in Table 1 and axis directions in Figure 3. Definition of “twin“ is not explained clearly enough in 3.3.3. Therefore it is revised by a more detailed definition. Etch channels ma
40、ximum number at quartz wafer of seed which do not pass through from surface to back surface are classified for three grades in 4.2.13 a). Users use seed portions of quartz wafers for devices. They request quartz wafers with less etch channels 6 IEC 62276:2016 IEC 2016 in seeds to reduce defects of d
41、evices. The classification of etch channels in seed may prompt a rise in quartz wafer quality. The text of this standard is based on the following documents: CDV Report on voting 49/1144/CDV 49/1170/RVC Full information on the voting for the approval of this standard can be found in the report on vo
42、ting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the dat
43、a related to the specific publication. At this date, the publication will be reconfirmed, withdrawn, replaced by a revised edition, or amended. A bilingual version of this publication may be issued at a later date. IEC 62276:2016 IEC 2016 7 INTRODUCTION A variety of piezoelectric materials are used
44、for surface acoustic wave (SAW) filter and resonator applications. Prior to an IEC meeting in 1996 in Rotterdam, wafer specifications were typically negotiated between users and suppliers. During this meeting, a proposal was announced to address wafer standardization. This standard has been prepared
45、 in order to provide industry standard technical specifications for manufacturing piezoelectric single crystal wafers to be used in surface acoustic wave devices. 8 IEC 62276:2016 IEC 2016 SINGLE CRYSTAL WAFERS FOR SURFACE ACOUSTIC WAVE (SAW) DEVICE APPLICATIONS SPECIFICATIONS AND MEASURING METHODS
46、1 Scope This document applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW) filters and reson
47、ators. 2 Normative references The following documents are referred to in the text in such a way that some or all of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (in
48、cluding any amendments) applies. IEC 60758:2016, Synthetic quartz crystal Specifications and guidelines for use ISO 2859-1: 1999, Sampling procedures for inspection by attributes Part 1: Sampling schemes indexed by acceptance quality limit (AQL) for lot-by-lot inspection 3 Terms and definitions For
49、the purposes of this document, the following terms and definitions apply. ISO and IEC maintain terminological databases for use in standardization at the following addresses: IEC Electropedia: available at http:/www.electropedia.org/ ISO Online browsing platform: available at http:/www.iso.org/obp 3.1 Single crystals for SAW wafer 3.1.1 as-grown synthetic quartz crystal right-handed or left-handed single crystal quartz grown hydrothermally
