IEC 62047-27-2017 Semiconductor devices - Micro-electromechanical devices Part 27 Bond strength test for glass frit bonded structures using micro-chevron- tests.pdf

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1、 IEC 62047-27 Edition 1.0 2017-01 INTERNATIONAL STANDARD Semiconductor devices Micro-electromechanical devices Part 27: Bond strength test for glass frit bonded structures using micro-chevron- tests (MCT) IEC 62047-27:2017-01(en) colour inside THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2017 I

2、EC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from either IEC or IECs member National Commit

3、tee in the country of the requester. If you have any questions about IEC copyright or have an enquiry about obtaining additional rights to this publication, please contact the address below or your local IEC member National Committee for further information. IEC Central Office Tel.: +41 22 919 02 11

4、 3, rue de Varemb Fax: +41 22 919 03 00 CH-1211 Geneva 20 infoiec.ch Switzerland www.iec.ch About the IEC The International Electrotechnical Commission (IEC) is the leading global organization that prepares and publishes International Standards for all electrical, electronic and related technologies

5、 About IEC publications The technical content of IEC publications is kept under constant review by the IEC. Please make sure that you have the latest edition, a corrigenda or an amendment might have been published. IEC Catalogue - webstore.iec.ch/catalogue The stand-alone application for consulting

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7、y of criteria (reference number, text, technical committee,). It also gives information on projects, replaced and withdrawn publications. IEC Just Published - webstore.iec.ch/justpublished Stay up to date on all new IEC publications. Just Published details all new publications released. Available on

8、line and also once a month by email. Electropedia - www.electropedia.org The worlds leading online dictionary of electronic and electrical terms containing 20 000 terms and definitions in English and French, with equivalent terms in 16 additional languages. Also known as the International Electrotec

9、hnical Vocabulary (IEV) online. IEC Glossary - std.iec.ch/glossary 65 000 electrotechnical terminology entries in English and French extracted from the Terms and Definitions clause of IEC publications issued since 2002. Some entries have been collected from earlier publications of IEC TC 37, 77, 86

10、and CISPR. IEC Customer Service Centre - webstore.iec.ch/csc If you wish to give us your feedback on this publication or need further assistance, please contact the Customer Service Centre: csciec.ch. IEC 62047-27 Edition 1.0 2017-01 INTERNATIONAL STANDARD Semiconductor devices Micro-electromechanic

11、al devices Part 27: Bond strength test for glass frit bonded structures using micro-chevron- tests (MCT) INTERNATIONAL ELECTROTECHNICAL COMMISSION ICS 31.080.99 ISBN 978-2-8322-3831-8 Registered trademark of the International Electrotechnical Commission Warning! Make sure that you obtained this publ

12、ication from an authorized distributor. colour inside 2 IEC 62047-27:2017 IEC 2017 CONTENTS FOREWORD . 3 INTRODUCTION . 5 1 Scope 6 2 Normative references 7 3 Terms, definitions, symbols and abbreviated terms 7 3.1 Terms and definitions 7 3.2 Symbols and abbreviated terms 7 4 Principle 8 5 Test setu

13、p . 8 5.1 General . 8 5.2 Actuator 8 5.3 Force transducers . 8 5.4 Mounting . 8 5.5 Data acquisition 8 6 Specimens . 9 6.1 Sample design 9 6.2 Determination and verification of the specimen geometry 11 7 Conduction of the test 11 8 Test parameter 12 8.1 Test velocity . 12 8.2 Specimen alignment 13 8

14、3 Environmental conditions 13 9 Analysis and evaluation . 13 9.1 General requirements for test series . 13 9.2 Valid test 13 9.3 Calculation of the fracture toughness of the glass frit connection 14 9.4 Statistical evaluation . 15 10 Test report . 15 Bibliography 16 Figure 1 Test setup of the micro

15、chevron-test 6 Figure 2 Standard geometry design of glass frit specimen 10 Figure 3 Design of the load application elements . 11 Figure 4 Permissible deviation for stud application . 12 Figure 5 Connection of the free sample parts as a result of the application of the applied force initiation eleme

16、nts 12 Figure 6 Exemplary measurement graph of a valid attempt 14 Table 1 Geometry factors in relation to substrate thickness . 14 IEC 62047-27:2017 IEC 2017 3 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 27: Bond strength test for glass frit

17、 bonded structures using micro-chevron-tests (MCT) FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international co-operation

18、 on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC

19、 Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non- governmental organizations liaising with the IEC also participate in this preparat

20、ion. IEC collaborates closely with the International Organization for Standardization (ISO) in accordance with conditions determined by agreement between the two organizations. 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international consensu

21、s of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees. 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National Committees in that sense. While all reasonable efforts are

22、made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications tran

23、sparently to the maximum extent possible in their national and regional publications. Any divergence between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter. 5) IEC itself does not provide any attestation of conformity. Independent

24、certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any services carried out by independent certification bodies. 6) All users should ensure that they have the latest edition of this publication. 7) No liabilit

25、y shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any nature whatsoever, whether direct or indirect, or for costs (includin

26、g legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is indispensable for the correct application of thi

27、s publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International Standard IEC 62047-27 has been prepared by subcommittee 47F: M

28、icroelectromechanical systems, of IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: CDV Report on voting 47F/230A/CDV 47F/259/RVC Full information on the voting for the approval of this International Standard can be found in the report

29、on voting indicated in the above table. This document has been drafted in accordance with the ISO/IEC Directives, Part 2. 4 IEC 62047-27:2017 IEC 2017 A list of all parts in the IEC 62047 series, published under the general title Semiconductor devices Micro-electromechanical devices, can be found on

30、 the IEC website. The committee has decided that the contents of this document will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific document. At this date, the document will be reconfirmed, withdrawn, replaced b

31、y a revised edition, or amended. A bilingual version of this publication may be issued at a later date. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users sho

32、uld therefore print this document using a colour printer. IEC 62047-27:2017 IEC 2017 5 INTRODUCTION MEMS devices, e.g. for automotive applications, have to ensure lifecycles of up to 15 years or more. In order to guarantee functionality and reliability of the used interconnection technologies, quali

33、fied test methods are required for evaluating the quality and strength of the bonding interfaces. One of the preferred interconnection technologies for MEMS encapsulation is glass frit bonding, using an additional intermediate bond layer. The micro-chevron-test is an experimental method to determine

34、 the fracture toughness of brittle materials or bond interfaces using specifically designed test chips (micro-chevron- samples) under defined load conditions. It was established for characterizing the strength of wafer bonds without additional intermediate bond layers. By analysis of test results fr

35、om a series of tests at the Fraunhofer Institute for Mechanics of Materials and the Fraunhofer Institute for Electronic Nano Systems with different geometry and layout of the test-probes, the micro-chevron-test was established for the bonding reliability of glass frit bonded devices as well. 6 IEC 6

36、2047-27:2017 IEC 2017 SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 27: Bond strength test for glass frit bonded structures using micro-chevron-tests (MCT) 1 Scope This part of IEC 62047 specifies a method for assessing the bond strength of glass frit bonded structures using micro-chevr

37、on-tests (MCT). It describes suitable sample geometry and provides guidance for the design of deviating sample geometries. The micro-chevron-test is an experimental method to determine the fracture toughness K ICof brittle materials or bond interfaces using specifically designed test chips (micro-ch

38、evron- samples) under defined load conditions (crack opening mode I). Owing to its high precision and low variance, it is suitable for analysing the influence of different process parameters on bond strength as well as for quality assurance. The exemplary setup of the micro-chevron-test is given in

39、Figure 1. Key 1 upper glued stud for application of tensile force 2 micro-chevron-test sample with patterned glass-frit-interface 3 lower glued stud for application of tensile force F applied force Figure 1 Test setup of the micro-chevron-test IEC 3 2 1 F F x y z IEC 62047-27:2017 IEC 2017 7 These o

40、perational instructions are applicable for symmetrically glass frit bonded silicon- silicon-stacks, i.e. the joint upper and lower chip of the chevron sample exhibit identical thickness and mechanical properties. The method is suitable for test samples, which are either produced directly from indivi

41、dual chips in corresponding dimensions, or for integrated samples, which have been singled out from processed wafers using suitable methods. This document determines preferential dimensions for samples as well as parameters for the test conditions. Deviating geometries can potentially influence the

42、viability of the tests as well as the comparability of the results. On that score, all parameters are determined and documented accurately. 2 Normative references There are no normative references in this document. 3 Terms, definitions, symbols and abbreviated terms 3.1 Terms and definitions No term

43、s and definitions are listed in this document. ISO and IEC maintain terminological databases for use in standardization at the following addresses: IEC Electropedia: available at http:/www.electropedia.org/ ISO Online browsing platform: available at http:/www.iso.org/obp 3.2 Symbols and abbreviated

44、terms Symbols Unit Descriptions A Bondmm 2effective bonding surface, represented by the area of the glass frit stripes A Chevronmm 2area of total chevron geometry a 0mm initial crack length a critmm critical crack length b mm sample width C Fbond area ratio t w1 ,t w2m wafer thickness 1-top wafer /

45、2-bottom wafer F maxN experimentally determined maximum force g smm width of glass frit bond stripes K ICMPa m 0,5fracture toughness of bonding interface l mm sample length v m/s testing velocity w smm distance between glass frit bond stripes Y mingeometry factor 8 IEC 62047-27:2017 IEC 2017 4 Princ

46、iple Strength measurement by means of micro-chevron-testing is based on a mode I crack opening within the bonding interlayer. Studs, applied to the surface of the chips, thus transfer a tensile load to the specimen in z-direction (see Figure 1). Special requirements are to be met when aligning speci

47、mens in the test setup in order to avoid additional shear stress within the bonding interface, and thus avoiding a mixed mode loading of the bond connection. The applied force F leads to an increase of the stress intensity factor K Iat the tip of the chevron geometry a 0 . If the stress intensity fa

48、ctor exceeds the fracture toughness, self- initiation of a defined crack with subsequent crack growth will start in this area. While the local stress intensity factor increases with growing crack length, the widening of the crack front decreases the stress intensity factor. As a consequence of these

49、 two counter- mechanisms, initially a quasi-stable crack propagation occurs in the brittle material. Hence, further crack growth up to the critical crack length a crit requires an increase of the introduced force up to the maximum value F max . As a result of the insetting instable crack propagation, the critical failure of the specimen occurs. The critical crack length a critis solely determined by the geometry of the used specimen and can be calculated using finite element ana

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