1、 IEC 62047-7 Edition 1.0 2011-06 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromechanical devices Part 7: MEMS BAW filter and duplexer for radio frequency control and selection Dispositifs semiconducteurs Dispositifs microlectromcaniques Partie 7: Filtre et duplexeur
2、 BAW MEMS pour la commande et le choix des frquences radiolectriques IEC 62047-7:2011 colour inside THIS PUBLICATION IS COPYRIGHT PROTECTED Copyright 2011 IEC, Geneva, Switzerland All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form o
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16、des commentaires sur cette publication ou si vous avez des questions, visitez le FAQ du Service clients ou contactez-nous: Email: csciec.ch Tl.: +41 22 919 02 11 Fax: +41 22 919 03 00 IEC 62047-7 Edition 1.0 2011-06 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices Micro-electromecha
17、nical devices Part 7: MEMS BAW filter and duplexer for radio frequency control and selection Dispositifs semiconducteurs Dispositifs microlectromcaniques Partie 7: Filtre et duplexeur BAW MEMS pour la commande et le choix des frquences radiolectriques INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMIS
18、SION ELECTROTECHNIQUE INTERNATIONALE U ICS 31.080.99 PRICE CODE CODE PRIX ISBN 978-2-88912-537-1 Registered trademark of the International Electrotechnical Commission Marque dpose de la Commission Electrotechnique Internationale colour inside 2 62047-7 IEC:2011 CONTENTS FOREWORD . 4 1 Scope . 6 2 No
19、rmative references . 6 3 Terms and definitions . 6 3.1 General terms . 6 3.2 Related with BAW filter 7 3.3 Related with BAW duplexer . 9 3.4 Characteristic parameters . 10 3.4.1 BAW resonator 10 3.4.2 BAW filter and duplexer . 13 3.4.3 Temperature characteristics 16 4 Essential ratings and character
20、istic parameters 16 4.1 Resonator, filter and duplexer marking . 16 4.2 Additional information 17 5 Test methods . 17 5.1 Test procedure 17 5.2 RF characteristics . 19 5.2.1 Insertion attenuation, IA . 19 5.2.2 Return attenuation, RA 20 5.2.3 Bandwidth . 21 5.2.4 Isolation 21 5.2.5 Ripple 22 5.2.6 V
21、oltage standing wave ratio (VSWR) . 22 5.2.7 Impedances of input and output . 23 5.3 Reliability test method . 23 5.3.1 Test procedure 23 Annex A (informative) Geometries of BAW resonators . 25 Annex B (informative) Operation of BAW resonators 26 Bibliography 28 Figure 1 Basic structure of BAW reson
22、ator . 7 Figure 2 Topologies for BAW filter design 8 Figure 3 Frequency responses of ladder and lattice type BAW filters . 8 Figure 4 An example of BAW duplexer configuration 9 Figure 5 Equivalent circuit of BAW resonator (one-port resonator) . 10 Figure 6 Measurement procedure of BAW filters and du
23、plexers . 18 Figure 7 Electrical measurement setup of BAW resonators, filters and duplexers . 19 Figure 8 Insertion attenuation of BAW filter 20 Figure 9 Return attenuation of BAW filter . 21 Figure 10 Isolation (Tx-Rx) of BAW duplexer 22 Figure 11 Ripple of BAW filter 22 Figure 12 Smith chart plot
24、of input and output impedances of BAW filter 23 Figure 13 Block diagram of a test setup for evaluating the reliability of BAW resonators and filters 24 62047-7 IEC:2011 3 Figure A.1 Geometry comparison of BAW resonators . 25 Figure B.1 Modified BVD (Butterworth-Van Dyke) equivalent circuit model . 2
25、7 4 62047-7 IEC:2011 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MICRO-ELECTROMECHANICAL DEVICES Part 7: MEMS BAW filter and duplexer for radio frequency control and selection FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standa
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36、not be held responsible for identifying any or all such patent rights. International Standard IEC 62047-7 has been prepared by subcommittee 47F: Micro- electromechanical systems, of IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS
37、 Report on voting 47F/79/FDIS 47F/87/RVD Full information on the voting for the approval of this standard can be found in the report on voting indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. 62047-7 IEC:2011 5 The committee has decid
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39、 IMPORTANT The “colour inside” logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this publication using a colour printer. 6 62047-7 IEC:2011 SEMICONDUCTOR DEVICE
40、S MICRO-ELECTROMECHANICAL DEVICES Part 7: MEMS BAW filter and duplexer for radio frequency control and selection 1 Scope This part of IEC 62047 describes terms, definition, symbols, configurations, and test methods that can be used to evaluate and determine the performance characteristics of BAW res
41、onator, filter, and duplexer devices as radio frequency control and selection devices. This standard specifies the methods of tests and general requirements for BAW resonator, filter, and duplexer devices of assessed quality using either capability or qualification approval procedures. 2 Normative r
42、eferences Void. 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 General terms 3.1.1 bulk acoustic wave BAW acoustic wave propagating in a bulk body 3.1.2 BAW resonator resonator employing bulk acoustic wave NOTE BAW resonator consists of piez
43、oelectric material between top and bottom electrodes, as shown in Figure 1. The top and bottom electrodes which can be made to vibrate in a vertical direction of the deposited piezoelectric film. The electrodes are either two air-to-solid interfaces or an acoustic Bragg reflector and an air-to-solid
44、 interface. The former is often called the film bulk acoustic resonator (FBAR), and the latter is called the solidly-mounted resonator (SMR). 62047-7 IEC:2011 7 AC power supply Electrode Piezoelectric film Air-to-solid interfaceKey Layers of a piece of BAW resonator Components to operate a BAW reson
45、ator Electrode To provide electrical input to a body of piezoelectric film and electrical connections with a external circuit AC power supply Electric power supply to vibrate a BAW resonator Piezoelectric film Body layer of a kind of BAW resonator Air to solid interface Figure 1 Basic structure of B
46、AW resonator 3.1.3 electrode electrically conductive plate in proximity to or film in contact with a face of the piezoelectric film by means of which a polarizing or driving field is applied to the element IEC/TS 61994-1, 3.21 3.1.4 piezoelectric film film which has piezoelectricity NOTE Piezoelectr
47、ic films can be distinguished as non-ferroelectric and ferroelectric materials. The non- ferroelectric materials, such as AlN (aluminium nitride) and ZnO (zinc oxide) have low dielectric constant, small dielectric loss, good hardness, and excellent insulating properties. Thus, they are good for micr
48、owave resonator and filter applications. The ferroelectric materials, such as PZT (lead-zirconate-titanate) and PLZT (lead- lanthanum-zirconate) have high dielectric constant, large dielectric loss, and fair insulating properties. Thus, they are good for memory and actuator applications. 3.1.5 direc
49、t piezoelectric effect effect which a mechanical deformation of piezoelectric material produces a proportional change in the electric polarization of that material 3.1.6 converse (or reverse) piezoelectric effect effect which mechanical stress proportional to an acting external electric field is induced in the piezoelectric material NOTE Converse piezoelectric effect is widely
