1、 IEEE Guide for the Application of Thyristor Surge Protective Device Components Sponsored by the Surge Protective Devices Committee IEEE 3 Park Avenue New York, NY 10016-5997 USA 26 April 2013 IEEE Power and Energy Society IEEE Std C62.37.1-2012(Revision of IEEE Std C62.37.1-2000)IEEE Std C62.37.1-2
2、012 (Revision of IEEE Std C62.37.1-2000) IEEE Guide for the Application of Thyristor Surge Protective Device Components Sponsor Surge Protective Devices Committee of the IEEE Power and Energy Society Approved 5 December 2012 IEEE-SA Standards Board Abstract: Applications information on fixed-voltage
3、 and gated-thyristor surge protective components (SPCs) is provided. Key device parameters and their sensitivities are explained. Several worked telecommunication circuit design examples are given. Keywords: IEEE C62.37.1, SPC, telecommunication circuits, thyristor surge protective component The Ins
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18、Participants At the time this IEEE guide was completed, the Low-Voltage Solid State Protection Components Working Group had the following membership: Michael J. Maytum, Chair Albert Martin, Vice Chair Robert Ashton Leonard Drewes Ernie Gallo Phillip Havens Wolfgang Oertel Bill Travis The following m
19、embers of the individual balloting committee voted on this guide. Balloters may have voted for approval, disapproval, or abstention. Robert Ashton Steven Bezner Thomas Bishop William Byrd Chuanyou Dai Carlo Donati Gary Donner Douglas Dorr Randall C. Groves Raymond Hill Ronald Hotchkiss Yuri Khersons
20、ky Joseph L. Koepfinger Greg Luri Albert Martin Michael J. Maytum Michael S. Newman Wolfgang Oertel Lorraine Padden Donald Parker Bansi Patel Thomas Phipps Iulian Profir Michael Roberts Thomas Rozek Bartien Sayogo Gil Shultz James Smith Jeremy Smith Jerry Smith Gary Stoedter James Timperley Donald B
21、. Turner John Vergis Kenneth White Kenneth White James Wilson Jonathan Woodworth Larry Young Jian Yu Copyright 2013 IEEE. All rights reserved. viWhen the IEEE-SA Standards Board approved this guide on 5 December 2012, it had the following membership: Richard H. Hulett, Chair John Kulick, Vice Chair
22、Robert M. Grow, Past Chair Konstantinos Karachalios, Secretary Satish Aggarwal Masayuki Ariyoshi Peter Balma William Bartley Ted Burse Clint Chaplin Wael Diab Jean-Philippe Faure Alexander Gelman Paul Houz Jim Hughes Young Kyun Kim Joseph L. Koepfinger* David J. Law Thomas Lee Hung Ling Oleg Logvino
23、v Ted Olsen Gary Robinson Jon Walter Rosdahl Mike Seavy Yatin Trivedi Phil Winston Yu Yuan *Member Emeritus Also included are the following nonvoting IEEE-SA Standards Board liaisons: Richard DeBlasio, DOE Representative Michael Janezic, NIST Representative Don Messina IEEE Standards Program Manager
24、, Document Development Malia Zaman IEEE Standards Program Manager, Technical Program Development Copyright 2013 IEEE. All rights reserved. viiIntroduction This introduction is not part of IEEE Std C62.37.1-2012, IEEE Guide for the Application of Thyristor Surge Protective Device Components. This app
25、lication guide has been produced as the companion to the IEEE Std C62.37-1996.aThe thyristor surge protective component (SPC) parameters measured in IEEE Std C62.37-1996 are explained in terms of their application relevance and any operating condition sensitivities are discussed. Several worked tele
26、communication circuit design examples are given, together with overviews of system problems, such as SPC coordination. There are a very large number of thyristor SPC variants available. The two basic families of fixed-voltage and gated-thyristor SPCs are further subdivided into bidirectional and uni
27、directional types. This guide provides information on these different types and the applications that they are most suited to. Substantive annexes provide information on design approaches, thyristor SPC technologies, device symbols, and equipment standards. aInformation on references can be found in
28、 Clause 2. Copyright 2013 IEEE. All rights reserved. viiiContents 1. Overview 1 1.1 Scope . 1 1.2 Purpose 1 2. Normative references 2 3. Definitions 2 4. Basic function and component description. 2 4.1 Basic device structure 2 4.2 Device equivalent circuit . 3 4.3 Switching characteristics . 4 4.4 P
29、erformance criteria of thyristor SPCs 5 4.5 Additional thyristor SPC structures . 7 5. General terms and definitions. 10 5.1 Types of thyristor SPC. 10 6. Electrical environment 13 7. Parameter interpretation and application 13 7.1 Normal system operation parameters 13 7.2 Equipment protection param
30、eters 20 7.3 Durability. 30 Annex A (informative) Example designs . 35 Annex B (informative) Comparison of dependability definitions 57 Annex C (informative) SPC technology comparison . 58 Annex D (informative) Thyristor SPC symbols . 64 Annex E (informative) Bibliography 66 Copyright 2013 IEEE. All
31、 rights reserved. ixIEEE Guide for the Application of Thyristor Surge Protective Device Components IMPORTANT NOTICE: IEEE Standards documents are not intended to ensure safety, health, or environmental protection, or ensure against interference with or from other devices or networks. Implementers of
32、 IEEE Standards documents are responsible for determining and complying with all appropriate safety, security, environmental, health, and interference protection practices and all applicable laws and regulations. This IEEE document is made available for use subject to important notices and legal dis
33、claimers. These notices and disclaimers appear in all publications containing this document and may be found under the heading “Important Notice” or “Important Notices and Disclaimers Concerning IEEE Documents.” They can also be obtained on request from IEEE or viewed at http:/standards.ieee.org/IPR
34、/disclaimers.html. 1. Overview 1.1 Scope This application guide applies to thyristor surge protective components (SPCs) used in systems with voltages up to 1000 V rms or 1200 V dc. These components are designed to limit overvoltages and divert surge currents by limiting the voltage and switching to
35、a low-impedance state. Although telecommunication circuits are the main application of thyristor SPCs, this guide will also provide useful information for other protection applications. This guide is intended to complement and be used in conjunction with IEEE Std C62.37-1996.11.2 Purpose This guide
36、is intended to provide assistance in selecting the most appropriate type of thyristor SPC for use in a surge protective device (SPD), equipment, or system application. IEEE Std C62.37-1996 defines thyristor SPC parameters and their measurement. This guide explains the basic functions, component stru
37、ctures, surge environment, comparative thyristor technologies, and how parameters are interpreted and selected for example applications. 1Information on references can be found in Clause 2. Copyright 2013 IEEE. All rights reserved. 1IEEE Std C62.37.1-2012 IEEE Guide for the Application of Thyristor
38、Surge Protective Device Components 2. Normative references The following referenced documents are indispensable for the application of this document (i.e., they must be understood and used, so each referenced document is cited in text and its relationship to this document is explained). For dated re
39、ferences, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments or corrigenda) applies. IEEE Std C62.37-1996 (Reaff 2010), IEEE Standard Test Specification for Thyristor Diode Surge Protective Devices.2,33. Definitions For the
40、 purposes of this document, the terms and definitions given IEEE Std C62.37-1996 and the following apply. The IEEE Standards Dictionary Online should be consulted for terms not defined in this clause.4anti-parallel (connection): A parallel combination of two semiconductor elements, where the main cu
41、rrent entry electrode of one element connects to the main current exit electrode of the other element, allowing one element to pass current in one voltage polarity and the other element to pass current in the opposite voltage polarity. Syn: inverse-parallel connection. 4. Basic function and componen
42、t description This clause covers the basic device structure, its equivalent circuit, characteristic values, operational parameters, and structures with increased functions. 4.1 Basic device structure Thyristor overvoltage protectors are manufactured by creating a series of N-type and P-type layers i
43、n a silicon chip. The basic thyristor structure has three PN junctions, which requires four layers (NPNP). As one layer can be the starting silicon (N- or P-Type), further layers need to be constructed to obtain the required four layers. Figure 1 shows the simplified structure of a unidirectional th
44、yristor SPC. The switching quadrant (see Figure 3) occurs when the bottom contact is positive with respect to the top contact. Also shown are the lumped equivalent circuit elements created by the semiconductor layers. This example started manufacture with an Nslice of silicon. Layers of P material a
45、re then created at the top and bottom. A further N+region is then made on the top surface. Finally the top and bottom metallization are added to provide contacts. The upper right section of the contact metal is not shown in order to illustrate the detail of the topside silicon surface. 2IEEE publica
46、tions are available from The Institute of Electrical and Electronics Engineers (http:/standards.ieee.org/) 3The IEEE standards or products referred to in this clause are trademarks of The Institute of Electrical and Electronics Engineers, Inc. 4IEEE Standards Dictionary Online subscription is availa
47、ble at: http:/www.ieee.org/portal/innovate/products/standard/standards_dictionary.html. Copyright 2013 IEEE. All rights reserved. 2IEEE Std C62.37.1-2012 IEEE Guide for the Application of Thyristor Surge Protective Device Components PN+N-PR1R2D1TR1TR2ShortCathodeElectrodeAnodeElectrodeFigure 1 Simpl
48、ified unidirectional thyristor SPC 4.2 Device equivalent circuit In Figure 1, transistor TR1 is formed by the N+PNlayers. Similarly transistor TR2 is formed by the PNP layers. The device breakdown voltage is determined by the breakdown of the central NP layers, which form a shared collector-base jun
49、ction for transistors TR1 and TR2. For clarity, the breakdown function is shown as breakdown diode D1. Resistance R1 is the lateral resistance of the P layer. Resistor R2 together with resistor R1 shunt the base-emitter junction of transistor TR1 to define the value of holding current, IH. Resistor R2 has a relatively low value of resistance and is considered as a localized short circuit between base and emitter. During the manufacturing process, the emitter N+diffusion is perforated with a series of dots to create these short circuits. In Figure 1 som
