ISO 157 CORR 1-1999 Coal - Determination of forms of sulfur Technical Corrigendum 1《煤 各种形态硫的测定 技术勘误1》.pdf

上传人:sumcourage256 文档编号:1251382 上传时间:2019-09-02 格式:PDF 页数:4 大小:31.94KB
下载 相关 举报
ISO 157 CORR 1-1999 Coal - Determination of forms of sulfur Technical Corrigendum 1《煤 各种形态硫的测定 技术勘误1》.pdf_第1页
第1页 / 共4页
ISO 157 CORR 1-1999 Coal - Determination of forms of sulfur Technical Corrigendum 1《煤 各种形态硫的测定 技术勘误1》.pdf_第2页
第2页 / 共4页
ISO 157 CORR 1-1999 Coal - Determination of forms of sulfur Technical Corrigendum 1《煤 各种形态硫的测定 技术勘误1》.pdf_第3页
第3页 / 共4页
ISO 157 CORR 1-1999 Coal - Determination of forms of sulfur Technical Corrigendum 1《煤 各种形态硫的测定 技术勘误1》.pdf_第4页
第4页 / 共4页
亲,该文档总共4页,全部预览完了,如果喜欢就下载吧!
资源描述

1、ICS 73.040 Rf. n o ISO 157:1996/Cor.1:1999(F) ISO 1999 Tous droits rservs Imp r ime nSu isse NORME INTERNATIONALE ISO 157:1996 RECTIFICATIF TECHNIQUE 1 Publi 1999-09-01 INTERNATIONAL ORGANIZATION FOR STANDARDIZATION ORGANISATION INTERNATIONALE DE NORMALISATION Charbon Dtermination de la teneur en di

2、ffrentes formes de soufre RECTIFICATIF TECHNIQUE 1 Coal Determination of forms of sulfur TECHNICAL CORRIGENDUM 1 L eR e c t i f i c a t i ft e c h n i q u e1l aN o r m ei n t e r n a t i onale ISO 157:1996 a t labor par le comit technique ISO/TC 27, Combustibles minraux solides, sous-comit SC 5, Mth

3、odes danalyse. Page iii Introduction la sixime ligne, remplacer nettoyage par lavage; Supprimer la neuvime ligne (“Sulfate. sulfate:”). Page 3 Figure 1 Au deuxime niveau, remplacer Ajout de peroxyde de sodium par Ajout de peroxyde dhydrogne.ISO 157:1996/Cor.1:1999(F) 2 ISO 1999 Tous droits rservs Pa

4、ge 4 Paragraphe 2.3.1 Remplacer la justesse de la balance analytique 0,1 g par 0,1 mg. Page 5 Tableau 1 la dernire ligne, remplacer la teneur en soufre total 2,0. Page 7 Paragraphe 3.2.6 la deuxime ligne, remplacer tampon de papier filtre par filtre-tampon. Page 8 Paragraphe 3.3.7 Remplacer circulat

5、ion dair par ventile. Paragraphe 3.4 la deuxime ligne du deuxime alina, remplacer chauffer par chauffer. la dernire ligne de lalina b), remplacer tampon par filtre. Page 11 Paragraphe 4.2.2.3 la dernire ligne, remplacer extemporanment par juste avant lutilisation. Page 13 Paragraphe 4.4.1 Remplacer la septime ligne existante par la suivante: le rsidu avec de lacide nitrique (4.2.1.1) et trois autres fois avec de leau distille chaude, en.ISO #:19#/Cor.#:19#(F) ISO 1999 Tous droits rservs 3ISO 157:1996/Cor.1:1999(F) 4 ISO 1999 Tous droits rservs

展开阅读全文
相关资源
猜你喜欢
  • DIN 50451-2-2003 en 4694 Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 2 Calcium (Ca) cobalt (Co) chromium (Cr) copper (Cu) .pdf DIN 50451-2-2003 en 4694 Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 2 Calcium (Ca) cobalt (Co) chromium (Cr) copper (Cu) .pdf
  • DIN 50451-3-2014 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3 Determination of 31 elements in high-purity nitric acid.pdf DIN 50451-3-2014 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 3 Determination of 31 elements in high-purity nitric acid.pdf
  • DIN 50451-4-2007 de 3234 Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4 Determination of 34 elements in ultra pure water by.pdf DIN 50451-4-2007 de 3234 Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 4 Determination of 34 elements in ultra pure water by.pdf
  • DIN 50451-5-2010 de 5058 Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 5 Guideline for the selection of materials and testin.pdf DIN 50451-5-2010 de 5058 Testing of materials for semiconductor technology - Determination of trace elements in liquids - Part 5 Guideline for the selection of materials and testin.pdf
  • DIN 50451-6-2014 de 1482 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 6 Determination of 36 elements in a high-purity a.pdf DIN 50451-6-2014 de 1482 Testing of materials for semiconductor technology - Determination of traces of elements in liquids - Part 6 Determination of 36 elements in a high-purity a.pdf
  • DIN 50452-1-1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1 Microscopic determination of particles《半导体工艺用材料的检验 液体中粒子分.pdf DIN 50452-1-1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 1 Microscopic determination of particles《半导体工艺用材料的检验 液体中粒子分.pdf
  • DIN 50452-2-2009 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 2 Determination of particles by optical particle counters《半.pdf DIN 50452-2-2009 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 2 Determination of particles by optical particle counters《半.pdf
  • DIN 50452-3-1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3 Calibration of optical particle counters《半导体工艺材料的检验 液体中颗粒.pdf DIN 50452-3-1995 Testing of materials for semiconductor technology - Test method for particle analysis in liquids - Part 3 Calibration of optical particle counters《半导体工艺材料的检验 液体中颗粒.pdf
  • DIN 50453-1-1990 Testing of materials for semiconductor technology determination of etch rates of etching mixtures silicium monocrystals gravimetric method《半导体工艺材料的检验 蚀刻混合剂浸蚀率的测定 第.pdf DIN 50453-1-1990 Testing of materials for semiconductor technology determination of etch rates of etching mixtures silicium monocrystals gravimetric method《半导体工艺材料的检验 蚀刻混合剂浸蚀率的测定 第.pdf
  • 相关搜索

    当前位置:首页 > 标准规范 > 国际标准 > 其他

    copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
    备案/许可证编号:苏ICP备17064731号-1