1、Designation: F1893 11F1893 18Guide forMeasurement of Ionizing Dose-Rate Survivability andBurnout of Semiconductor Devices1This standard is issued under the fixed designation F1893; the number immediately following the designation indicates the year oforiginal adoption or, in the case of revision, th
2、e year of last revision. A number in parentheses indicates the year of last reapproval. Asuperscript epsilon () indicates an editorial change since the last revision or reapproval.1. Scope1.1 This guide defines the detailed requirements for testing semiconductor devices for short-pulse high dose-rat
3、e ionization-induced survivability and burnout failure. The test facility shall be capable of providing the necessary dose rates to perform themeasurements. Typically, large flash X-ray (FXR) machines operated in the photon mode, or FXR e-beam facilities are utilizedbecause of their high dose-rate c
4、apabilities. Electron Linear Accelerators (LINACs) may be used if the dose rate is sufficient. Twomodes of test are described: (1) A survivability test, and ( 2) A burnout failure level test.1.2 The values stated in International System of Units (SI) are to be regarded as standard. No other units of
5、 measurement areincluded in this standard.1.3 This international standard was developed in accordance with internationally recognized principles on standardizationestablished in the Decision on Principles for the Development of International Standards, Guides and Recommendations issuedby the World T
6、rade Organization Technical Barriers to Trade (TBT) Committee.2. Referenced Documents2.1 ASTM Standards:2E170 Terminology Relating to Radiation Measurements and DosimetryE668 Practice for Application of Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose inRadiation-Hardness Tes
7、ting of Electronic DevicesE1894 Guide for Selecting Dosimetry Systems for Application in Pulsed X-Ray SourcesF526 Test Method for Using Calorimeters for Total Dose Measurements in Pulsed Linear Accelerator or Flash X-ray Machines2.2 ISO/ASTM Standard:251275 Practice for Use of a Radiochromic Film Do
8、simetry System3. Terminology3.1 Definitions:3.1.1 burnout failure level testa test performed to determine the maximum dose-rate level the device survives and theminmum dose-rate level where the device experiences burnout.3.1.1.1 DiscussionIn such a test, semiconductor devices are exposed to a series
9、 of irradiations of increasing dose-rate levels. The maximum dose rateat which the device survives is determined for worst-case bias conditions. The burnout failure level test is always a destructive test.3.1.2 dose ratethe amount of energy absorbed per unit mass of a material per unit time during e
10、xposure to the radiation field(typically, expressed in units of Gy(material)/s). For pulsed radiation sources, dose rate typically refers to the peak dose rate duringthe pulse.3.1.3 dose rate induced latchupregenerative device action in which a parasitic region (for example, a four (4) layer p-n-p-n
11、or n-p-n-p path) is turned on by the photocurrent generated by a pulse of ionizing radiation, and remains on for an indefinite period1 This guide is under the jurisdiction of Committee F01on Electronics, and is the direct responsibility of Subcommittee F01.11 on Nuclear and Space Radiation Effects.C
12、urrent edition approved Jan. 1, 2011March 1, 2018. Published January 2011April 2018. Originally approved in 1998. Last previous edition approved in 20032011 asF1893-98(2003).F1893-11. DOI: 10.1520/F1893-11.10.1520/F1893-18.2 For referencedASTM standards, visit theASTM website, www.astm.org, or conta
13、ctASTM Customer Service at serviceastm.org. For Annual Book of ASTM Standardsvolume information, refer to the standards Document Summary page on the ASTM website.This document is not an ASTM standard and is intended only to provide the user of an ASTM standard an indication of what changes have been
14、 made to the previous version. Becauseit may not be technically possible to adequately depict all changes accurately, ASTM recommends that users consult prior editions as appropriate. In all cases only the current versionof the standard as published by ASTM is to be considered the official document.
15、Copyright ASTM International, 100 Barr Harbor Drive, PO Box C700, West Conshohocken, PA 19428-2959. United States1of time after the photocurrent subsides. The device will remain latched as long as the power supply delivers voltage greater thanthe holding voltage and current greater than the holding
16、current. Latchup disrupts normal circuit operation in some portion of thecircuit, and may also cause catastrophic failure due to local heating of semiconductor regions, metallization or bond wires.3.1.4 failure conditiona device is considered to have undergone burnout failure if the device experienc
17、es one of the followingconditions.(1) functional failurea device failure where the device under test, (DUT) fails functional tests following exposure.(2) parametric failurea device failure where the device under test, (DUT) fails parametric measurements after exposure.3.1.4.1 DiscussionFunctional or
18、 parametric failures may be caused by total ionizing dose mechanisms. See interferences for additional discussion.3.1.5 high dose-rate burnoutpermanent damage to a semiconductor device caused by abnormally large currents flowing injunctions and resulting in a discontinuity in the normal current flow
19、 in the device.3.1.5.1 DiscussionThis effect strongly depends on the mode of operation and bias conditions. Temperature may also be a factor in damage to thedevice should latchup occur prior to failure. Latchup is known to be temperature dependent.3.1.6 ionizing dose rate responsethe transient chang
20、es which occur in the operating parameters or in the output signal of anoperating device when exposed to an ionizing radiation pulse. See Terminology E170 for a definition of ionization. Within thisstandard, the scope of the dose rate response is restricted to consideration of linear microcircuits.3
21、.1.7 ionizing radiation effectsthe changes in the electrical parameters of a microelectronic device resulting fromradiation-induced trapped charge. These are also sometimes referred to as “total dose effects.”3.1.8 latchup windowa latchup window is the phenomenon in which a device exhibits latchup i
22、n a specific range of dose rates.Above and below this range, the device does not latchup. A device may exhibit more than one latchup window. This phenomenonhas been observed for some complementary metal-oxide semiconductor (CMOS) logic devices, oxide sidewall logic devices andlarge scale integration
23、 (LSI) memories and may occur in other devices.3.1.9 survivability testA“pass/fail” test performed to determine the status of the device after being exposed to a predetermineddose-rate level. The survivability test is usually considered a destructive test.4. Summary of Guide4.1 Semiconductor devices
24、 are tested for burnout during and after exposure to an ionizing high dose-rate radiation pulse. Themeasurement is deemed as a survivability test when the test criteria is a pass/fail measurement at a predetermined dose-rate level,or deemed as a burnout failure level test when the maximum passing do
25、se-rate level and the minimum failing dose rate level forburnout is determined experimentally.4.2 The following quantities are unspecified in this guide and must be agreed upon between the parties to the test:4.2.1 The maximum ionizing dose (total dose to which the devices will be subjected during t
26、he test),4.2.2 The maximum dose rate to which the devices will be subjected during the test, and4.2.3 The bias conditions to which the devices will be subjected during the test.5. Significance and Use5.1 The use of FXR or LINAC radiation sources for the determination of high dose-rate burnout in sem
27、iconductor devices isaddressed in this guide. The goal of this guide is to provide a systematic approach to testing semiconductor devices for burnoutor survivability.5.2 The different types of failure modes that are possible are defined and discussed in this guide. Specifically, failure can bedefine
28、d by a change in device parameters, or by a catastrophic failure of the device.5.3 This guide can be used to determine if a device survives (that is, continues to operate and function within the specifiedperformance parameters) when irradiated to a predetermined dose-rate level; or, the guide can be
29、 used to determine the dose-rateburnout failure level (that is, the minimum dose rate at which burnout failure occurs). However, since this latter test is destructive,the minimum dose-rate burnout failure level must be determined statistically.6. Interferences6.1 There are several interferences that
30、 need to be considered when this test procedure is applied.6.2 Ionizing Dose DamageDevices may be permanently damaged by the accumulation of ionizing dose. This limits thenumber of radiation pulses that can be applied during burnout testing. The ionizing dose sensitivity depends on fabricationF1893
31、182techniques and device technology. Metal-oxide, semiconductor (MOS) devices are especially sensitive to ionizing dose damage;however, bipolar devices with oxide-isolated sidewalls or bipolar linear circuits may also be affected by low levels of ionizing dose.The maximum ionizing total dose exposur
32、e of the devices under test must not exceed fifty percent (50 %) of their typical ionizingdose failure level for that specific part type to ensure that device failure is caused by the transient dose rate, and not by the totalaccumulated ionizing total dose.6.2.1 Radiation Level Step SizeThe size of
33、the steps between successive radiation pulses (that is, the dose-rate increment)limits the accuracy of the determination of the burnout failure level.6.3 LatchupSome types of integrated circuits are susceptible to latchup during transient radiation exposure. If latchup occurs,the device will not fun
34、ction correctly until power is temporarily removed and reapplied. Permanent damage (burnout) may alsooccur during latchup; it is primarily caused by a substantial increase in power supply current that leads to increased powerdissipation, localized heating, or both. Latchup is temperature dependent a
35、nd testing at elevated temperature is required to establishworst-case operating conditions for latchup. Latchup testing is addressed elsewhere.6.4 Charge Build-up DamageDamage to a device may occur due to direct electron irradiation of the DUT leads. When usingdirect electron irradiations (see Secti
36、on 7), all device leads must be shielded from the electron beam to reduce charge pickup thatcould cause abnormally large voltages to be generated on internal circuitry and produce damage not related to ionizing dose-rateburnout.6.5 Bias and Load ConditionsBias and load conditions may affect the surv
37、ivability and burnout response. Usually, theobjective of the test is to determine the dose-rate survivability or burnout under worst-case operating conditions.6.5.1 Input BiasUnless otherwise specified, the input bias condition shall be chosen to provide the worst-case operatingconditions. For examp
38、le, for digital devices, input pins that are in the high state should be tied directly to the supply voltage. Foranalog devices, input voltages generally should be at the maximum levels expected to be used. For both digital and analog devices,it is desirable to perform the burnout test using at leas
39、t two different input conditions, such as minimum input levels and maximuminput levels, or alternately with half the inputs tied high and the remaining tied low.6.5.2 Output LoadingUnless otherwise specified, the DUT outputs shall be chosen to provide the worst-case conditions fordevice operation. F
40、or digital devices, worst case conditions should include maximum fan-out. For analog devices, worst-caseconditions should include maximum output voltage or load current. For both digital and analog devices, it may be desirable toperform the burnout test using at least two different output conditions
41、.6.5.3 Operating VoltageUnless otherwise specified, testing shall be performed using maximum operating voltages. The testsetup shall be configured such that the transient power supply photocurrent shall not be limited by the external circuit resistanceor lead inductance. Power supply stiffening capa
42、citors shall be included to keep the power supply voltage from varying more than10 % of the specified value during and after the radiation pulse.6.6 Over-StressThe high dose-rate burnout test should be considered destructive. Peak photocurrents in excess of 2 to 3amperes can occur during these tests
43、. These large Large currents can produce localized metallization or semiconductor melting thatis not readily detected by electrical tests, and both, but tests; both may adversely affect device reliability. Devices that exceed themanufacturers absolute limits for current or power during burnout tests
44、 should not be used in high-reliability applications.6.7 Test TemperaturesTests shall be performed at ambient temperature, or at a temperature agreed upon between the partiesto the test. If tests are performed in a vacuum, overheating may become an issue, requiring control of the devices temperature
45、.7. Apparatus7.1 GeneralThe apparatus used for tests should include as a minimum, the radiation source, dosimetry equipment, a testcircuit board, line drivers, cables and electrical instrumentation to measure the transient response, provide bias, and performfunctional tests. Precautions shall be obs
46、erved to obtain an electrical measurement system with ample shielding, satisfactorygrounding, and low noise from electrical interference or from the radiation environment.7.1.1 Radiation SourceThe most appropriate radiation source for high dose-rate burnout tests is a FXR machine. The requireddose r
47、ate for burnout cannot usually be achieved using an electron linear accelerator (LINAC) because LINACs typically cannotproduce a sufficiently high dose rate over the critical active area of the device under test; however, some LINACs are capable ofmeeting these requirements. Linear accelerators shal
48、l be used only with agreement of all parties to the test.7.1.2 Flash X-ray (Photon Mode)The choice of facilities depends on the available dose rate as well as other factors includingphoton spectrum, pulse width and electron end-point energy. The selection of the pulse width is affected by; (a), the
49、dose raterequired, and (b), the ionizing dose accumulation per pulse. Finally, the FXR electron end-point energy must be greater than 1 MeVto ensure that the resulting bremsstrahlung photons have sufficient energy to penetrate the DUT.7.1.3 Flash X-ray (E-beam Mode)A FXR or LINAC operated in the e-beam mode generally provides a higher dose rate thansimilar machines operated in the photon mode. However, testing in the e-beam mode requires that appropriate precautions be takenand special test fixtures be used to ensure meaningful results. The beam produce
