1、Semiconductor devices Mechanical and climatic test methodsPart 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devicesBS EN 60749-44:2016BSI Standards PublicationWB11885_BSI_StandardCovs_2013_AW.indd 1 15/05/2013 15:06National forewordThis British Standard is the
2、UK implementation of EN 60749-44:2016. It isidentical to IEC 60749-44:2016. The UK participation in its preparation was entrusted to TechnicalCommittee EPL/47, Semiconductors.A list of organizations represented on this committee can be obtained onrequest to its secretary.This publication does not pu
3、rport to include all the necessary provisions ofa contract. Users are responsible for its correct application. The British Standards Institution 2016.Published by BSI Standards Limited 2016ISBN 978 0 580 86203 8ICS 31.080.01Compliance with a British Standard cannot confer immunity fromlegal obligati
4、ons.This British Standard was published under the authority of theStandards Policy and Strategy Committee on 30 November 2016.Amendments/corrigenda issued since publicationDate Text affectedBRITISH STANDARDBS EN 60749-44:2016EUROPEAN STANDARD NORME EUROPENNE EUROPISCHE NORM EN 60749-44 October 2016
5、ICS 31.080.01 English Version Semiconductor devices - Mechanical and climatic test methods - Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices (IEC 60749-44:2016) Dispositifs semiconducteurs - Mthodes dessais mcaniques et climatiques - Partie 44: Mthode
6、 dessai des effets dun vnement isol (SEE) irradi par un faisceau de neutrons pour des dispositifs semiconducteurs (IEC 60749-44:2016) Halbleiterbauelemente - Mechanische und klimatische Prfverfahren - Teil 44: Prfverfahren zur Einzelereignis-Effekt-Neutronenbestrahlung von Halbleiterbauelementen (IE
7、C 60749-44:2016) This European Standard was approved by CENELEC on 2016-08-25. CENELEC members are bound to comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and
8、 bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC Management Centre or to any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under t
9、he responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the same status as the official versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic, Denmark, Estoni
10、a, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland, Turkey and the United Kingdom. European Committee fo
11、r Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels 2016 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Mem
12、bers. Ref. No. EN 60749-44:2016 E BS EN 60749-44:2016EN 60749-44:2016 2 European foreword The text of document 47/2303/FDIS, future edition 1 of IEC 60749-44, prepared by IEC/TC 47 “Semiconductor devices“ was submitted to the IEC-CENELEC parallel vote and approved by CENELEC as EN 60749-44:2016. The
13、 following dates are fixed: latest date by which the document has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2017-05-25 latest date by which the national standards conflicting with the document have to be withdrawn (dow) 2019-08-25 At
14、tention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. CENELEC and/or CEN shall not be held responsible for identifying any or all such patent rights. Endorsement notice The text of the International Standard EC 60749-44:2016 was approved
15、by CENELEC as a European Standard without any modification. In the official version, for Bibliography, the following note has to be added for the standard indicated : IEC 60749-38 NOTE Harmonized as EN 60749-38. BS EN 60749-44:2016 2 IEC 60749-44:2016 IEC 2016 CONTENTS FOREWORD . 4 1 Scope 6 2 Norma
16、tive references. 6 3 Terms and definitions 6 4 Test apparatus 9 4.1 Measurement equipment . 9 4.2 Radiation source . 10 4.3 Test sample 10 5 Procedure neutron irradiated soft error test 10 5.1 Surface preparation . 10 5.2 Power supply voltage 10 5.3 Ambient temperature . 11 5.4 Core cycle time . 11
17、5.5 Data pattern 11 5.6 Number of measurement samples 11 5.7 Calculations for time required in the beam . 11 6 Evaluation . 11 6.1 Measurement and failure rate estimation . 11 6.2 Determination of MCU and MBU cross sections . 12 6.3 Determination of device FIT (event rate) from cross section . 12 7
18、Summary . 12 Annex A (informative) Additional information for the applicable procurement specification 13 A.1 General . 13 A.2 Description of the beam source . 13 A.3 Description of the sample and test vehicle . 13 A.3.1 Sample size . 13 A.3.2 Vehicle description . 13 A.4 Test description 14 A.5 Tes
19、t results . 14 Annex B (informative) White neutron test apparatus . 16 Annex C (informative) Failure rate calculation . 18 C.1 An influence of soft error for actual semiconductor devices 18 C.1.1 General . 18 C.1.2 Duty derating . 18 C.1.3 Utility derating 18 C.1.4 Critically derating . 19 C.2 Failu
20、re rate calculation including derating 19 Bibliography . 20 Figure B.1 Typical white neutron spectra with different shield (polyethylene) thickness 16 Figure B.2 Typical neutron spectrum 17 Figure B.3 Comparison of LANSCE (WNR) and TRIUMF neutron spectra with terrestrial neutron spectrum 17 BS EN 60
21、749-44:2016IEC 60749-44:2016 IEC 2016 3 Figure C.1 Schematic image of duty derating 18 Figure C.2 Schematic image of memory effective area for utility derating 19 BS EN 60749-44:2016 4 IEC 60749-44:2016 IEC 2016 INTERNATIONAL ELECTROTECHNICAL COMMISSION _ SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATI
22、C TEST METHODS Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices FOREWORD 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising all national electrotechnical committees (IEC National Committees
23、). The object of IEC is to promote international co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports, Publicly Available S
24、pecifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with may participate in this preparatory work. International, governmental and non-governmental organizat
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26、rs express, as nearly as possible, an international consensus of opinion on the relevant subjects since each technical committee has representation from all interested IEC National Committees. 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
27、 Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any misinterpretation by any end user. 4) In order to promote international uniformity, IEC
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29、does not provide any attestation of conformity. Independent certification bodies provide conformity assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any services carried out by independent certification bodies. 6) All users should ensure that they
30、 have the latest edition of this publication. 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and members of its technical committees and IEC National Committees for any personal injury, property damage or other damage of any nature wh
31、atsoever, whether direct or indirect, or for costs (including legal fees) and expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC Publications. 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publ
32、ications is indispensable for the correct application of this publication. 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent rights. IEC shall not be held responsible for identifying any or all such patent rights. International St
33、andard IEC 60749-44 has been prepared by IEC technical committee 47: Semiconductor devices. The text of this standard is based on the following documents: FDIS Report on voting 47/2303/FDIS 47/2312/RVD Full information on the voting for the approval of this standard can be found in the report on vot
34、ing indicated in the above table. This publication has been drafted in accordance with the ISO/IEC Directives, Part 2. BS EN 60749-44:2016IEC 60749-44:2016 IEC 2016 5 A list of all the parts in the IEC 60749 series, published under the general title Semiconductor devices Mechanical and climatic test
35、 methods, can be found on the IEC website. The committee has decided that the contents of this publication will remain unchanged until the stability date indicated on the IEC website under “http:/webstore.iec.ch“ in the data related to the specific publication. At this date, the publication will be
36、reconfirmed, withdrawn, replaced by a revised edition, or amended. IMPORTANT The colour inside logo on the cover page of this publication indicates that it contains colours which are considered to be useful for the correct understanding of its contents. Users should therefore print this document usi
37、ng a colour printer. BS EN 60749-44:2016 6 IEC 60749-44:2016 IEC 2016 SEMICONDUCTOR DEVICES MECHANICAL AND CLIMATIC TEST METHODS Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices 1 Scope This part of IEC 60749 establishes a procedure for measuring the s
38、ingle event effects (SEEs) on high density integrated circuit semiconductor devices including data retention capability of semiconductor devices with memory when subjected to atmospheric neutron radiation produced by cosmic rays. The single event effects sensitivity is measured while the device is i
39、rradiated in a neutron beam of known flux. This test method can be applied to any type of integrated circuit. NOTE 1 Semiconductor devices under high voltage stress can be subject to single event effects including SEB, single event burnout and SEGR single event gate rupture, for this subject which i
40、s not covered in this document, please refer to IEC 62396-4 2. NOTE 2 In addition to the high energy neutrons some devices can have a soft error rate due to low energy ( time rate of flow of particle energy emitted from or incident on a surface, divided by the area of that surface Note 1 to entry: T
41、he flux is usually expressed in particles per square centimetre second (N/cm2s) or particles per square centimetre hour (N/cm2h). 3.10 soft error rate SER rate at which soft errors are occurring BS EN 60749-44:2016 8 IEC 60749-44:2016 IEC 2016 3.11 failure in time FIT failure in 109device-hours 3.12
42、 firm fault failure that cannot be reset other than by rebooting the system or by cycling the power to the relevant functional element 3.13 hard fault at the aircraft function level, permanent failure of a component within an LRU Note 1 to entry: A hard fault results in the removal of the LRU affect
43、ed and the replacement of the permanently damaged component before a system/system architecture can be restored to full functionality. Such a fault can impact the value for the MTBF of the LRU repaired. 3.14 single event burnout SEB burnout of a powered electronic component or part thereof as a resu
44、lt of the energy absorption triggered by an individual radiation event 3.15 single event functional interrupt SEFI occurrence of an upset, usually in a complex device, such that a control path is corrupted, leading the part to cease to function properly Note 1 to entry: Examples of a complex device
45、include microprocessors. Note 2 to entry: This effect has sometimes been referred to as lockup, indicating that sometimes the part can be put into a “frozen” state. 3.16 single event gate rupture SEGR event in the gate of a powered insulated gate component when the radiation charge absorbed by the d
46、evice is sufficient to cause gate rupture, which is destructive 3.17 single event latch up SEL event in a four layer semiconductor device when the radiation absorbed by the device is sufficient to cause a node within the powered semiconductor device to be held in a fixed state whatever input is appl
47、ied until the device is de-powered Note 1 to entry: Such latch up can be destructive or non-destructive 3.18 single event transient SET momentary voltage excursion (voltage spike) at a node in an integrated circuit caused by a single energetic particle strike Note 1 to entry: The specific terms ASET
48、 analogue single event transient and DSET digital single event transient can be used. BS EN 60749-44:2016IEC 60749-44:2016 IEC 2016 9 3.19 analogue single event transient ASET spurious signal or voltage produced at the output of an analogue device by the deposition of charge by a single particle 3.2
49、0 digital single event transient DSET spurious digital signal or voltage, induced by the deposition of charge by a single particle that can propagate through the circuit path during one clock cycle 3.21 multiple bit upset MBU energy deposited in the silicon of an electronic component by a single ionising particle causing upset of more than one bit in the same word 3.22 cross section combination of a sensitive area and probability of an interaction depositing the c
