1、BRITISH STANDARD BS EN 61643-321: 2002 Components for low-voltage surge protective devices Part 321: Specifications for avalanche breakdown diode (ABD) The European Standard EN 61643-321:2002 has the status of a British Standard ICS 29.120.50; 31.080.10 NO COPYING WITHOUT BSI PERMISSION EXCEPT AS PE
2、RMITTED BY COPYRIGHT LAWBS EN 61643-321:2002 This British Standard, having been prepared under the direction of the Electrotechnical Sector Policy and Strategy Committee, was published under the authority of the Standards Policy and Strategy Committee on 21 March 2002 BSI 21 March 2002 ISBN 0 580 39
3、230 9 National foreword This British Standard is the official English language version of EN 61643-321:2002. It is identical with IEC 61643-321:2001. The UK participation in its preparation was entrusted by Technical Committee PEL/37, Surge arresters, to Subcommittee PEL/37/2, Surge arresters - Low
4、voltage, which has the responsibility to: A list of organizations represented on this committee can be obtained on request to its secretary. From 1 January 1997, all IEC publications have the number 60000 added to the old number. For instance, IEC 27-1 has been renumbered as IEC 60027-1. For a perio
5、d of time during the change over from one numbering system to the other, publications may contain identifiers from both systems. Cross-references Attention is drawn to the fact that CEN and CENELEC Standards normally include an annex which lists normative references to international publications wit
6、h their corresponding European publications. The British Standards which implement international or European publications may be found in the BSI Standards Catalogue under the section entitled “International Standards Correspondence Index”, or by using the “Find” facility of the BSI Standards Electr
7、onic Catalogue. A British Standard does not purport to include all the necessary provisions of a contract. Users of British Standards are responsible for their correct application. Compliance with a British Standard does not of itself confer immunity from legal obligations. aid enquirers to understa
8、nd the text; present to the responsible international/European committee any enquiries on the interpretation, or proposals for change, and keep the UK interests informed; monitor related international and European developments and promulgate them in the UK. Summary of pages This document comprises a
9、 front cover, an inside front cover, the EN title page, pages 2 to 17 and a back cover. The BSI copyright date displayed in this document indicates when the document was last issued. Amendments issued since publication Amd. No. Date CommentsEUROPEAN STANDARD EN 61643-321 NORME EUROPENNE EUROPISCHE N
10、ORM February 2002 CENELEC European Committee for Electrotechnical Standardization Comit Europen de Normalisation Electrotechnique Europisches Komitee fr Elektrotechnische Normung Central Secretariat: rue de Stassart 35, B - 1050 Brussels 2002 CENELEC - All rights of exploitation in any form and by a
11、ny means reserved worldwide for CENELEC members. Ref. No. EN 61643-321:2002 E ICS 31.080.10 English version Components for low-voltage surge protective devices Part 321: Specifications for avalanche breakdown diode (ABD) (IEC 61643-321:2001) Composants pour parafoudres basse tension Partie 321: Spci
12、fications pour les diodes avalanche (ABD) (CEI 61643-321:2001) Bauelemente fr berspannungs- schutzgerte fr Niederspannung Teil 321: Festlegungen fr Avalanche-Dioden (ABD) (IEC 61643-321:2001) This European Standard was approved by CENELEC on 2002-02-01. CENELEC members are bound to comply with the C
13、EN/CENELEC Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration. Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the Central Secretariat or t
14、o any CENELEC member. This European Standard exists in three official versions (English, French, German). A version in any other language made by translation under the responsibility of a CENELEC member into its own language and notified to the Central Secretariat has the same status as the official
15、 versions. CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic, Denmark, Finland, France, Germany, Greece, Iceland, Ireland, Italy, Luxembourg, Malta, Netherlands, Norway, Portugal, Spain, Sweden, Switzerland and United Kingdom.Foreword The text of docume
16、nt 37B/59/FDIS, future edition 1 of IEC 61643-321, prepared by SC 37B, Specific components for surge arresters and surge protective devices, of IEC TC 37, Surge arresters, was submitted to the IEC-CENELEC parallel vote and was approved by CENELEC as EN 61643-321 on 2002-02-01. The following dates we
17、re fixed: latest date by which the EN has to be implemented at national level by publication of an identical national standard or by endorsement (dop) 2002-11-01 latest date by which the national standards conflicting with the EN have to be withdrawn (dow) 2005-02-01 Annexes designated “normative“ a
18、re part of the body of the standard. In this standard, annex ZA is normative. Annex ZA has been added by CENELEC. _ Endorsement notice The text of the International Standard IEC 61643-321:2001 was approved by CENELEC as a European Standard without any modification. _ Page2 EN61643321:2002 BSI21March
19、2002CONTENTS 1 Scope 4 2 Normative references. 4 3 Definitions and symbols . 4 4 Basic function and description for ABDs. 7 5 Service conditions 9 6 Standard test methods and procedures 9 6.1 Standard design test criteria . 9 6.2 Test conditions . 9 6.3 Clamping voltage V C(see figure 2) . 10 6.4 Ra
20、ted peak impulse current I PPM(see figure 2). 10 6.5 Maximum working voltage V WMand maximum working r.m.s. voltage V WMrms (see figure 3) 10 6.6 Stand-by current I D(see figure 3) . 11 6.7 Breakdown (avalanche) voltage V BR(see figure 4) . 11 6.8 Capacitance C j . 12 6.9 Rated peak impulse power di
21、ssipation P PPM . 12 6.10 Rated forward surge current I FSM(see figure 1c) 12 6.11 Forward voltage V FS . 12 6.12 Temperature coefficient of breakdown voltage V BR . 13 6.13 Temperature derating (see figure 5) 13 6.14 Thermal resistance R thJA or R thJCor R thJL13 6.15 Transient thermal impedance Z
22、thJA or Z thJCor Z thJL . 13 6.16 Rated average power dissipation P MAV . 14 6.17 Peak overshoot voltage V OS(see figure 7) 14 6.18 Overshoot duration (see figure 7) 14 6.19 Response time (see figure 7) 14 7 Fault and failure modes . 16 7.1 Degradation fault mode. 16 7.2 Short-circuit failure mode 1
23、6 7.3 Open-circuit failure mode 16 7.4 “Fail-safe“ operation . 16 Annex ZA (normative) Normative references to international publications with their corresponding European publications 17 Figure 1 Structure, bias condition and V-I characteristics for a unidirectional ABD 7 Figure 2 Test circuit for
24、clamping voltage V C , peak impulse current I PP , and rated forward surge current I FSM . 10 Figure 3 Test circuit for verifying maximum working voltage V WMstand-by current I D and maximum working r.m.s. voltage V WMrms . 11 Figure 4 Test circuit for verifying breakdown (avalanche) voltage V BR .
25、11 Figure 5 Test circuit for verifying forward voltage V FS12 Figure 6 Derating curve for ABD components 14 Figure 7 Graph illustrating voltage overshoot, response time and overshoot duration 15 Figure 8 Impulse current waveform 15 Page3 EN61643321:2002 BSI21March2002 COMPONENTS FOR LOW-VOLTAGE SURG
26、E PROTECTIVE DEVICES Part 321: Specifications for avalanche breakdown diode (ABD) 1 Scope This part of IEC 61643 is applicable to avalanche breakdown diodes (ABDs) which represent one type of surge protective device component (hereinafter referred to as SPDC) used in the design and construction of s
27、urge protective devices connected to low-voltage power distribution systems, transmission, and signalling networks. Test specifications in this standard are for single ABDs consisting of two terminals. However, multiple ABDs may be assembled within a single package defined as a diode array. Each dio
28、de within the array can be tested to this specification. This standard contains a series of test criteria for determining the electrical characteristics of the ABD. From the standard test methods described herein, the performance characteristics and ratings of the ABD can be verified or established
29、for specific packaged designs. 2 Normative references The following normative documents contain provisions which, through reference in this text, constitute provisions of this part of IEC 61643. For dated references, subsequent amend- ments to, or revisions of, any of these publications do not apply
30、. However, parties to agreements based on this part of IEC 61643 are encouraged to investigate the possibility of applying the most recent editions of the normative documents indicated below. For undated references, the latest edition of the normative document referred to applies. Members of IEC and
31、 ISO maintain registers of currently valid International Standards. IEC 60068 (all parts), Environmental testing IEC 60364 (all parts), Electrical installations of buildings IEC 60364-3:1993, Electrical installations of buildings Part 3: Assessment of general characteristics IEC 60721 (all parts), C
32、lassification of environmental conditions IEC 60747-2:2000, Semiconductor devices Discrete devices and integrated circuits Part 2: Rectifier diodes IEC 60749:1996, Semiconductor devices Mechanical and climatic test methods 3 Definitions and symbols For the purpose of this part of IEC 61643, the foll
33、owing definitions and symbols apply. NOTE These definitions apply to one type of SPDC known as an ABD, having both symmetrical and asymmetrical voltage-current (V-I) characteristics. Such definitions are for a unidirectional element (see figure 1). If the ABD is considered bidirectional, definitions
34、 in the third quadrant will apply in both directions of the V-I characteristic curve. 3.1 avalanche breakdown diode ABD component intended to limit transient voltages and divert surge currents. This is a two- terminal diode that may be packaged with multiple elements having a common terminal Page4 E
35、N61643321:2002 BSI21March20023.2 clamping voltage V C peak voltage measured across the ABD during the application of a peak impulse current I PP for a specified waveform NOTE Due to the thermal, reactive, or other effects, peak voltage and peak pulse current are not necessarily coincident in time. A
36、lso shown as V CL . 3.3 rated peak impulse current I PPM rated maximum value of peak impulse current I PPthat may be applied without causing diode failure NOTE The impulse waveshape used for diode characterization is 10/1 000 s unless otherwise specified. 3.4 maximum working voltage (maximum d.c. vo
37、ltage) V WM maximum peak working or d.c. voltage which may be continuously applied to the ABD without degradation or damaging effects. For a.c. applied voltages, the maximum working r.m.s. voltage is V WMrms NOTE It is also shown as V RM(rated maximum) and known as rated stand-off voltage. 3.5 stand
38、-by current I D maximum current that flows through the ABD at maximum working voltage for a specified temperature NOTE Also shown as I Rfor reverse leakage current. 3.6 breakdown (avalanche) voltage V BR voltage measured across the ABD at a specified pulsed d.c. current I T(or I BR ) on the V-I char
39、acteristics curve at, or near, the place where the avalanche occurs 3.7 capacitance C j capacitance between two terminals of the ABD measured at a specific frequency and bias NOTE Also shown as C. 3.8 rated peak impulse power dissipation P PPM peak pulse power dissipation resulting from the product
40、of rated peak impulse current I PPM and clamping voltage V C P PPM= I PPM V C NOTE Also shown as P P . 3.9 rated forward surge current I FSM maximum peak current for an 8,3 ms or 10 ms half-sine wave without causing device failure. (This definition applies to unidirectional ABDs only.) Page5 EN61643
41、321:2002 BSI21March20023.10 forward voltage V FS peak voltage measured across the ABD for a specified forward surge current I FS . (This defi- nition applies to unidirectional ABDs only.) NOTE Also shown as V F . 3.11 temperature coefficient of breakdown voltage V BR ratio of the change in breakdown
42、 voltage V BRto changes in temperature NOTE Expressed as either millivolts per degree Kelvin or per cent per degree Kelvin (mV/K or %/K). 3.12 temperature derating derating above a specified base temperature for either peak impulse current or peak impulse power NOTE Expressed in percentage of the cu
43、rrent or power. 3.13 thermal resistance R thJA , R thJC , R thJL junction to ambient, case or lead terminal temperature rise per unit input of applied power expressed as degrees Kelvin per watt (K/W) 3.14 transient thermal impedance Z thJA , Z thJC , Z thJL change in the difference between the virtu
44、al junction temperature and the temperature of a specific reference point or region (ambient, case or lead) at the end of a time interval. This change is divided by the step function change in power dissipation at the beginning of the same time interval which causes the change of temperature differe
45、nce. NOTE Thermal resistance is expressed as degrees Kelvin per watt (K/W). 3.15 rated average power dissipation P M(AV) rated average power dissipation in the device due to repetitive pulses at a specified current and temperature without causing device failure 3.16 peak overshoot voltage V OS exces
46、s voltage above the clamping voltage V Cof the device for a given current that occurs when current waves of less than, or equal to, 10 s virtual front duration are applied NOTE This value may be expressed as a percentage of the clamping voltage V Cfor a 10/1 000 s current wave. 3.17 pulsed d.c. test
47、 current I T test current for measurement of the breakdown voltage V BR . This is defined by the manu- facturer and usually given in milliamperes with a pulse duration of less than 40 ms NOTE Also shown as I BR . 3.18 peak impulse current I PP peak impulse current value applied across the ABD to det
48、ermine the clamping voltage V Cfor a specified waveshape Page6 EN61643321:2002 BSI21March20024 Basic function and description for ABDs The avalanche breakdown diode (ABD), in its basic form, is a single semiconductor P/N junction consisting of an anode (P) and a cathode (N) (see figure 1a). In d.c.
49、applications, this ABD is reverse biased in such a way that a positive potential is applied to the cathode (N) side of the element (see figure 1b). P N IEC 2456/01 P N + IEC 2457/01 Figure 1a Structure Figure 1b Bias condition I FSM P N + P N + i +i +v v I FS V C V BR V WM I D V FS I T I PP I PPM Quadrant 1 Quadrant 3 IEC 2458/01 Figure 1c V-I characteristics Connections and supplies Avalanche parameters Forward parameters V WM Maximum working volt
