1、BRITISH STANDARD BS ISO 18114:2003 Surface chemical analysis Secondary-ion mass spectrometry Determination of relative sensitivity factors from ion-implanted reference materials ICS 71.040.40 BS ISO 18114:2003 This British Standard was published under the authority of the Standards Policy and Strate
2、gy Committee on 7 August 2003 BSI 7 August 2003 ISBN 0 580 42438 3 National foreword This British Standard reproduces verbatim ISO 18114:2003 and implements it as the UK national standard. The UK participation in its preparation was entrusted to Technical Committee CII/60, Surface chemical analysis,
3、 which has the responsibility to: A list of organizations represented on this committee can be obtained on request to its secretary. Cross-references The British Standards which implement international publications referred to in this document may be found in the BSI Catalogue under the section enti
4、tled “International Standards Correspondence Index”, or by using the “Search” facility of the BSI Electronic Catalogue or of British Standards Online. This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. Complianc
5、e with a British Standard does not of itself confer immunity from legal obligations. aid enquirers to understand the text; present to the responsible international/European committee any enquiries on the interpretation, or proposals for change, and keep the UK interests informed; monitor related int
6、ernational and European developments and promulgate them in the UK. Summary of pages This document comprises a front cover, an inside front cover, the ISO title page, pages ii to v, a blank page, pages 1 to 4, an inside back cover and a back cover. The BSI copyright notice displayed in this document
7、 indicates when the document was last issued. Amendments issued since publication Amd. No. Date Comments Reference number ISO 18114:2003(E) OSI 3002INTERNATIONAL STANDARD ISO 18114 First edition 2003-04-01 Surface chemical analysis Secondary-ion mass spectrometry Determination of relative sensitivit
8、y factors from ion-implanted reference materials Analyse chimique des surfaces Spectromtrie de masse des ions secondaires Dtermination des facteurs de sensibilit relative laide de matriaux de rfrence ions implants BSISO18114:2003IS:41181 O3002(E) DPlcsid Fremia ihTs PDF file mya ctnoian emdebt dedyf
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13、ale 65 eneG 1121-HC 02 av leT. 4 + 10 947 22 1 11 xaF0 947 22 14 + 9 74 E-mial coirypthgis.o gro We bwww.is.o groii ISO 3002 Allr ihgtsser edevrBSISO18114:2003IS:41181 O3002(E) I SO 3002 All irhgts seredevr iiiContents Page Foreword iv Introduction.v 1 Scope1 2 Normative references1 3 Terms and defi
14、nitions .1 4 Symbols and abbreviated terms1 5 Principle .2 6 Apparatus.2 7 Ion-implanted reference materials.2 8 Procedure.2 9 Test report3 Bibliography4 BSISO18114:2003IS:41181 O3002(E) iv I SO 3002 All irhgts seredevrForeword ISO (the International Organization for Standardization) is a worldwide
15、federation of national standards bodies (ISO member bodies). The work of preparing International Standards is normally carried out through ISO technical committees. Each member body interested in a subject for which a technical committee has been established has the right to be represented on that c
16、ommittee. International organizations, governmental and non-governmental, in liaison with ISO, also take part in the work. ISO collaborates closely with the International Electrotechnical Commission (IEC) on all matters of electrotechnical standardization. International Standards are drafted in acco
17、rdance with the rules given in the ISO/IEC Directives, Part 2. The main task of technical committees is to prepare International Standards. Draft International Standards adopted by the technical committees are circulated to the member bodies for voting. Publication as an International Standard requi
18、res approval by at least 75 % of the member bodies casting a vote. Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. ISO shall not be held responsible for identifying any or all such patent rights. ISO 18114 was prepared by Technica
19、l Committee ISO/TC 201, Surface chemical analysis, Subcommittee SC 6, Secondary ion mass spectrometry. BSISO18114:2003IS:41181 O3002(E) I SO 3002 All irhgts seredevr vIntroduction Ion-implanted materials are commonly used in secondary-ion mass spectrometry for the calibration of instruments. This in
20、ternational Standard was prepared to provide a uniform method for determining the relative sensitivity factor of an element in a specified matrix from an ion-implanted reference material, and to show how the concentration of the element in a different sample of the same matrix material can be determ
21、ined. BSISO18114:2003blank BSISO18114:2003INTENRATIONAL TSANDADR IS:41181 O3002(E)I SO 3002 All irhgts seredevr 1Surface chemical analysis Secondary-ion mass spectrometry Determination of relative sensitivity factors from ion-implanted reference materials 1 Scope This International Standard specifie
22、s a method of determining relative sensitivity factors (RSFs) for secondary- ion mass spectrometry (SIMS) from ion-implanted reference materials. The method is applicable to specimens in which the matrix is of uniform chemical composition, and in which the peak concentration of the implanted species
23、 does not exceed one atomic percent. 2 Normative references The following referenced documents are indispensable for the application of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments
24、) applies. ISO 18115, Surface chemical analysis Vocabulary 3 Terms and definitions For the purposes of this document, the terms and definitions given in ISO 18115 apply. 4 Symbols and abbreviated terms , AM i C the atomic concentration of the analyte element A in the matrix M at cycle i of a depth p
25、rofile, expressed in atoms per unit volume d the depth over which the depth profile is integrated, expressed in length units j A i I the detected count rates of the analyte ion of isotope A jat measurement cycle i, expressed in counts/s k M i I the detected count rates of the reference isotope M kat
26、 measurement cycle i, expressed in counts/s I BGthe mean background count rate of species A j , expressed in counts/s N A j the fractional isotopic abundance of the analyte isotope A jin the unknown sample n the number of cycles over which the depth profile is integrated the implanted fluence of iso
27、tope A j , expressed in atoms per unit area RSF the relative sensitivity factor, expressed in atoms per unit volume SIMS secondary-ion mass spectrometry BSISO18114:2003IS:41181 O3002(E) 2 I SO 3002 All irhgts seredevr5 Principle An isotopic relative sensitivity factor (RSF) for a particular element-
28、matrix combination is derived from a SIMS depth profile of an ion-implanted external standard. This RSF can then be used to quantify the concentration of the same element as a function of depth in a different sample of the same matrix material, using the equation: , , RSF j jk j k A AM AM i i A M i
29、I C IN = (1) This procedure only applies to samples and reference materials in which the detected count rate of the analyte ion is directly proportional to its concentration. In practice, the upper limit of analyte concentration for which this proportionality holds is generally assumed to be one ato
30、mic percent. The measurement conditions used for the analysis of reference materials and unknown samples shall be the same. 6 Apparatus The procedure described here can be used to determine an RSF from data obtained with any SIMS instrument that is capable of obtaining depth profiles. Follow the ins
31、trument manufacturers instructions or local documented procedures for setting up the instrument to obtain the best quality depth profile data. 7 Ion-implanted reference materials Ion-implanted reference materials for this procedure shall have peak concentrations below one atomic percent, but at leas
32、t a factor of 100 greater than the background intensity or detection limit of the analyte element in the SIMS instrument. The depth of the peak in the depth distribution of the analyte shall be at least a factor of two below the depth of the onset of steady-state sputtering conditions as indicated b
33、y the stability of a matrix reference signal. Use certified reference materials (CRMs) or secondary materials derived from CRMs, when available. If no CRM is available, use reference materials for which the implanted fluence has been measured by an independent method such as Rutherford backscatterin
34、g spectrometry or neutron activation analysis, if possible. 8 Procedure Determine the count rates of the ions of analyte isotope A j , j A i I , and reference isotope M k , k M i I , at each measurement cycle i of the depth profile of the implanted reference material. Calculate the relative sensitiv
35、ity factor for isotopic species A jof element A in matrix M with isotopic reference species M kfrom the equation: , BG 1 RSF jk j k AM A n i M i i n II d I = = (2) The depth d is typically calculated by measuring the depth of the sputtered crater in the sample with a calibrated stylus profilometer a
36、nd assuming that a constant depth is removed over each measurement cycle. BSISO18114:2003IS:41181 O3002(E) I SO 3002 All irhgts seredevr 3If the variation of the reference species count rate is smaller than a specified tolerance level, it may be regarded as constant and its value k M I need be measu
37、red only once during the depth profile. In this case, the equation used to calculate the RSF becomes: , BG 1 RSF k jk j M AM n A i i nI I Id = = (3) 9 Test report The following information shall be recorded when a relative sensitivity factor is determined by this method: a) the relative sensitivity
38、factor; b) the model of SIMS instrument used; c) the primary-beam species and energy; d) the secondary-ion species and polarity; e) the reference ion isotope and species; f) any special spectrometer conditions (e.g. high mass resolution, kinetic energy filtering); g) any special analytical condition
39、s (e.g. oxygen flooding of surface). BSISO18114:2003IS:41181 O3002(E) 4 I SO 3002 All irhgts seredevrBibliography 1 WILSON, R.G., STEVIE, F.A., and MAGEE, C.W., Secondary Ion Mass Spectrometry A Practical Handbook for Depth Profiling and Bulk Impurity Analysis, John Wiley and Sons, New York, 1989, S
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