1、. REVISIONS LTR DESCRIPTION DATE APPROVED A Change supplier, validate, editorial changes 18 February 2009 Alan Barone MIL-S-19500/232 has been canceled. This drawing may be used as a substitute for MIL-S-19500/232. Prepared in accordance with MIL-STD-100 Source Control drawing REV PAGE REV A A A A A
2、 A A A A REV STATUS OF PAGES PAGES 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED BY Roger Kissel DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OH http:/www.dscc.dla.mil/programs/milspec/docsearch.asp CHECKED BY Alan Barone TITLE Original date of drawing APPROVED BY Thomas M. Hess SEMICONDUCTOR DEVICE, DIODE, SILI
3、CON, MIXER, 1N21WE, 1N21WEM and 1N21WEMR 23 May 2001 SIZE A 037Z3 DWG NO. 00005 REV A PAGE 1 OF 9 THIS DRAWING WAS REVIEWED ON 18 FEBRUARY 2009, AND IS VALID FOR ACQUISITIONAMSC N/A 5961-E086Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1. SCOPE 1.
4、1 Scope. This specification covers the detail requirements for a silicon semiconductor diode (with removable adapter), types: 1N21WE (forward polarity); 1N21WEM (matched forward pair); 1N21WEMR (matched forward and reverse pair); for use as a mixer in S-band equipment. Ratings for the 1N21WE are app
5、licable to the types having additional suffixes (see 3.5.1). This drawing may be used as a substitute for parts listed on MIL-S-19500/232 which has been cancelled (see 6.3). 1.2 Part or Identifying Number (PIN). The complete PIN shall be as follows: 00005 - 1N21WE | | Drawing number Device 1.2.1 Dev
6、ice types. The device type shall identify the polarity and voltage of the devices as follows: Device type Figure number 00005-1N21WE 1 00005-1N21WEM 1 00005-1N21WEMR 1 1.2 Ratings. Types 1N21WE, 1N21WEM, 1N21WEMR Z(IF) LC NFo VSWR Minimum Maximum Ohms 350 450 dB 5.5 dB 7.0 ratio 1.3 2. APPLICABLE DO
7、CUMENTS 2.1 Government documents. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Departm
8、ent of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARD MIL-STD-750 - Test Methods for Semiconductor
9、 Devices. 2.2 Order of Precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 2.
10、3 Other Government documents, drawings, and publications. The following other Government documents, drawings, and publications form a part of this document to the extent specified herein. Unless otherwise specified, the issues are those cited in the solicitation. C66058 DEFENSE ELECTRONICS SUPPLY CE
11、NTER, BURN-OUT TESTER FOR MICROWAVE DIODES. (DEFENSE SUPPLY CENTER COLUMBUS, Alan Barone, DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990). DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 00005 REV A PAGE 2 Provided by IHSNot for ResaleNo reproduction or networkin
12、g permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 00005 REV A PAGE 3 2.4 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issue
13、s of the documents which are DoD adopted are those listed in the issue of the DODISS cited in the solicitation. Unless otherwise specified, the issues of documents not listed in the DODISS are the issues of the documents cited in the solicitation (see 6.2). ASTM-B16/B16M ROD, BRASS, FREE-CUTTING, BA
14、R AND SHAPES FOR USE IN SCREW MACHINES. (AMERICAN SOCIETY for TESTING and MATERIALS, 1100 Barr Harbor Drive, West Conshohocken PA 19428-2959). (Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Defense Automated Printing Servic
15、e, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 3. REQUIREMENTS 3.1 General. The individual item requirements shall be in accordance with MIL-PRF-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used h
16、erein shall be as specified in MIL-PRF-19500 and as follows: 1/G Reciprocal of conductance (IF impedance). SWR Standing wave ratio. 3.3 Interface and physical dimensions. The semiconductor diode shall be of symmetrical construction and shall consist of a cylindrical body having pins on both ends. Th
17、e body outline with removable base adapter shall conform to figure 1. Organic package sealants may be used at the option of the manufacturer. 3.3.1 Base adapter. The base adapter shall be of the design, construction and physical dimensions shown on figure 2. 3.3.2 Plating. The diode and base adapter
18、 shall be plated as specified on figures 1 and 2. 3.4 Performance characteristics. Performance characteristics shall be in accordance with tables I, and II. 3.5 Marking. The marking shall be placed on each device in accordance with MIL-PRF-19500, except that the manufacturers identification and coun
19、try of origin may be omitted. 3.5.1 Matched diodes. The “M“ suffix for matched diodes shall be omitted in the type designation on each device. Diodes meeting the matching requirements of this specification will be packaged with a statement to that effect (see 4.4.3 and 4.4.4). 3.6 Burnout single pul
20、se. At the end of all manufacturing processes and prior to selecting samples for testing, all diodes shall be capable of meeting burnout by single pulse test in accordance with method 4146 of MIL-STD-750, using Drawing C66058 or equivalent, and E = 125 V dc, minimum. The device being tested shall be
21、 in the forward-direction operation. 3.7 Manufacturer eligibility. To be eligible to supply devices to this drawing, the manufacturer shall perform conformance inspection in accordance with procuring activitys requested first article testing requirements in accordance with 4.3 herein. Devices specif
22、ied herein shall meet traceability and lot formation requirements of MIL-PRF-19500 except as modified by the procuring activity. 3.8 Submission of certificate of compliance. A certificate of compliance shall be required from a manufacturer in order to be listed as a source of supply in 6.5. The cert
23、ificate of compliance submitted to DSCC-VAC, prior to listing as a source of supply in 6.5, shall state that the manufacturers product meets the applicable requirements of MIL-PRF-19500 and the requirements herein. 3.9 Certificate of conformance. A certificate of conformance shall be provided with e
24、ach lot of devices delivered in accordance with this drawing. 3.10 Recycled, recovered, or environmentally preferable materials. Recycled, recovered, or environmentally preferable materials should be used to the maximum extent possible provided that the material meets or exceeds the operational and
25、maintenance requirements, and promotes economically advantageous life cycle costs. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 00005 REV A PAGE 4 3.11 Workmanship.
26、 The semiconductor shall be uniform in quality and free from any defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.2 Test conditions. Unless otherwis
27、e specified herein, the test conditions, when applicable, shall be as follows: P = 0.5 mW 5 percent. f = 3060MHz 5 MHz. Fi 1.5dB ZL= 400 1 4.3 Conformance inspection. Conformance inspection shall consist of the examinations and tests specified in groups A and B. 4.3.1 Group A inspection. Group A ins
28、pection shall consist of the inspections and tests specified in table I. 4.3.2 Group B inspection. Group B inspection shall consist of the inspections and tests specified in table II. 4.4 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.4
29、.1 High-temperature operation. The semiconductor diode shall be placed in the mixer holder. The ambient temperature of the diode, with test conditions specified for the overall noise figure, shall be raised to +150C min and shall be maintained at this temperature until equilibrium is reached. The NF
30、oshall then be determined and shall be less than 15 dB. The temperature shall then be returned to 25C 3C at which time NFoshall be less than 12 dB. 4.4.2 Microwave parameters. The Lc, NRoand NFoparameters may be determined by any suitable combination of measured parameters selected from among the fo
31、llowing: Lc, NRoNfif(actual), and NFo(actual). A measurement of either Lcor NRo, but not both is required. NFoshall be determined for an assumed or actual intermediate-frequency noise figure (NFif) of 1.5 0.25 dB. 4.4.3 Matched pair, “M” suffix (forward polarity). The matched forward pair (M suffix)
32、 shall consist of two diodes, tested to requirements of subgroup 3, table I, having the cathode connected to the center conductor. 4.4.4 Matched pair, “MR” suffix (forward and reverse polarity). The matched forward pair (MR suffix) shall consist of two diodes, tested to requirements of subgroup 3, t
33、able I, one diode having the cathode connected to the center conductor (forward polarity) and the second diode having the anode connected to the center conductor (reverse polarity). 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract
34、 or order (see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Points packaging activiti
35、es within the Military Service or Defense Agency, or within the Military Services system commands. Packaging data retrieval is available from the managing Military Departments or Defense Agencys automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. Provided
36、 by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Inches Millimeters Ltr Min Max Min Max Notes A .800 .840 20.32 21.34 B .292 .296 7.42 7.52 C .246 .250 6.25 6.35 D .766 .792 19.46 20.12 E .180 .190 4.57 4.83 6 F .195 .199 4.95 5.05 G .047 .057 1.19 1.45 H .22
37、2 .240 5.64 6.10 J .195 .215 4.95 5.46 5 K .092 .094 2.34 2.39 2, 5, 7 L .030 .046 .76 1.17 5 Q .020 .030 .51 .76 5 R .030 .76 5NOTES: 1. Millimeters are given for general information only. 2. The ends of both pins shall be smooth with no burrs or sharp edges. Within the diameter R, a recess is allo
38、wed on both ends of the pins. 3. Metal parts shall be plated 10 microinches minimum. 4. The polarity shall be indicated by an arrow, with the arrow pointing in the direction of easier current flow. 5. Applies to both pins. 6. Removable base adapter shall establish the forward or reverse polarity. 7.
39、 Eccentricity between both pins and the base dimension C should not exceed 0.0075 inches. 8. Metal parts shall be gold plated 10 msi minimum. FIGURE 1. Semiconductor device, diode types 1N21WE, 1N21WEM, and 1N21WEMR. DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO.
40、00005 REV A PAGE 5 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-Dimensions Inches Millimeters Ltr Min Max Min Max A .242 .256 6.15 6.50 B .292 .296 7.42 7.52 C .246 .250 6.25 6.35 D .187 4.75 E .100 2.54 F .195 .199 4.95 5.05 G .0915 .0920 2.32 2.
41、34 H .0940 .0945 2.39 2.40 J .216 .221 5.49 5.61 K .031 .036 .79 .91 NOTES: 1. Millimeters (to nearest .01 mm) are given for general information only. 2. This diameter should be .100 (2.54 mm) max diameter before closing jaws. This diameter shall then be sufficiently closed and the adapter so temper
42、ed that it will fit on the minimum gage rod and maximum gage rod, in each case with a snug fit (for hand assembly). 3. Each slot shall be .013 (.330 mm) min, .017 (.132 mm) max wide by .185 (4.70 mm) deep before closing. The six slots are equally spaced. 4. The material for the adapter shall be bras
43、s in accordance with ASTM-B16/B16M, or equivalent. 5. Metal parts shall be gold plated 10 msi minimum. 6. All burrs and sharp edges shall be removed. FIGURE 2. Removable base adapter, included as a part of types 1N21WE, 1N21WEM, and 1N21WEMR. DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A COD
44、E IDENT NO. 037Z3 DWG NO. 00005 REV A PAGE 6 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 00005 REV A PAGE 7 TABLE I. Group A inspection. MIL-STD-750 Limits Inspect
45、ion 1/ Method Conditions Symbol Min Max Unit Subgroup 1 Visual and mechanical Examination 2071 Subgroup 2 Voltage standing wave ratio 4136 SCL-5679/1 VSWR 1.3 Overall noise figure (see 4.4.2) 4126 Test condition A; SCL-5679/1 Nfo7.0 dB Subgroup 3 Conversion loss (see 4.4.2) 4101 SCL-5679/1 2/ LC 5.5
46、 dB IF impedance 4116 SCL-5679/1 2/ Z(IF) 350 450 ohms Output noise ratio (see 4.4.2) 4121 SCL-5679/1 2/ NRo1.5 Matched pair requirements (see 4.4.3 and 4.4.4) Conversion loss unbalance 4101 LC 0.3 dB IF impedance unbalance 4116 Z(IF)25 ohms 1/ For sample size, see MIL-PRF-19500. 2/ SCL-5679/1 Cryst
47、al mixer SAGE 221. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-DEFENSE SUPPLY CENTER, COLUMBUS COLUMBUS, OHIO SIZE A CODE IDENT NO. 037Z3 DWG NO. 00005 REV A PAGE 8 TABLE II. Group B inspection. MIL-STD-750 Limits Inspection 1/ Method Conditions
48、Symbol Min Max Unit Subgroup 1 Physical dimensions 2066 (See figure 1), Dimensions A, C, D, and F; Dimensions B and H Subgroup 2 Thermal shock (temperature cycling) 1051 Test condition B; T(high) = +150C +5C, -0C Moisture resistance 1021 Omit initial conditioning End points: (Group A subgroup 2) 4126 Test condition A; SCL-5679/1 Nfo12.0 dB Subgroup 3 Burnout by repetitive pulsing 2/ 4141 eo = 10 V, Rg = 50 ohms; 60,000 pulses minimum, tp = 1.0 s, PRF optional End points: (Group A subgroup 2) Subgroup 4 Shock 2016 500 G; t 1 ms 5 blows in each orientation: X1, Y
