1、INCHPOUND MILSTD7503 3 January 2012 SUPERSEDING MILSTD750E (IN PART) 20 November 2006 (see 6.4) DEPARTMENT OF DEFENSE TEST METHOD STANDARD TRANSISTOR ELECTRICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 3: TEST METHODS 3000 THROUGH 3999 AMSC N/A FSC 5961 The documentation and process conversion me
2、asured necessary to comply with this revision shall be completed by 3 July 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-ii FOREWORD 1. This standard is approved for use by all Departments and Agencies of the Department of Defense. 2. This re
3、vision has resulted in many changes to the format, but the most significant one is the splitting the document into parts. See MILSTD750 for the change summary. 3. Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Logistics Agency, DLA Land and Maritime,
4、ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil. Provided by IHSNot for ResaleNo reproduction or
5、networking permitted without license from IHS-,-,-MILSTD7503 iii CONTENTS PARAGRAPH PAGE FOREWORD.ii 1 SCOPE . 1 1.1 Purpose . 1 1.2 Numbering system 1 1.2.1 Classification of tests . 1 1.2.2 Test method revisions . 1 1.3 Methods of reference 1 2 APPLICABLE DOCUMENTS 2 2.1 General . 2 2.2 Government
6、 documents 2 2.2.1 Specifications, standards, and handbooks 2 2.3 Non-Government publications . 2 2.4 Order of precedence . 3 3 DEFINITIONS . 4 3.1 Acronyms, symbols, and definitions 4 3.2 Acronyms used in this standard 4 4. GENERAL REQUIREMENTS . 5 4.1 General . 5 4.2 Test circuits . 5 4.4 Nondestr
7、uctive tests 5 4.4 Destructive tests 5 4.5 Laboratory suitability . 5 5. DETAILED REQUIREMENTS . 5 6. NOTES . 6 6.1 Intended use . 6 6.2 International standardization agreement . 6 6.3 Subject term (key word) listing 6 6.4 Supersession data. 6 Provided by IHSNot for ResaleNo reproduction or networki
8、ng permitted without license from IHS-,-,-iv CONTENTS FIGURE TITLE 30011 Test circuit for breakdown voltage, collector to base 30111 Test circuit for breakdown voltage, collector to emitter 30201 Test circuit for floating potential 30261 Test circuit for breakdown voltage, emitter to base 30301 Test
9、 circuit for collector to emitter voltage 30361 Test circuit for collector to base cutoff current 30411 Test circuit for collector to emitter cutoff current 30511 Test circuit for SOA (continuous dc) 30521 Test circuit for SOA (pulsed) 30531 Test circuit for SOA (switching) 30611 Test circuit for em
10、itter to base cutoff current 30661 Test circuit for base emitter voltage (saturated or nonsaturated) 30711 Test circuit for saturation voltage and resistance 30761 Test circuit for forward current transfer ratio 30861 Test circuit for static input resistance 30921 Test circuit for static transconduc
11、tance 31001 Frothingham VF40 curve 31011 Thermal impedance testing setup for diodes 31012 Thermal impedance testing waveforms 31013 Thermal impedance testing waveforms 31014 Example curve of VF versus TJ 31015 Heating curves for two extreme devices (log-linear) 31016 Heating curves for two extreme d
12、evices (log-log) 31017 Typical VF(or ZJX) distribution with asymmetrical histogram distribution 3101A1 Heat flow distance vs. elapsed time plot 3101B1 Analysis of theta test 3101B2 Theta versus tmd3101B3 Theta versus tmd3101B4 Theta versus tmd3101B5 Theta versus tmd31031 K factor calibration setup 3
13、1032 Common gate thermal impedance measurement circuit (gate emitter on voltage method) 31033 Common source thermal impedance measurement circuit (gate emitter on voltage method) 31034 Device waveforms during the three segments of the thermal transient test 31035 Second VGEmeasurement waveform 31036
14、 Example curve of VGE(ON)versus TJ 31041 K factor calibration setup 31042 Thermal resistance measurement circuit (constant current forward-biased gate voltage method) 31043 Device waveforms during the three segments of the thermal resistance test 31044 Second VGSfmeasurement waveform 31045 Calibrati
15、on curve 31051 Single-phase bridge 31052 Three-phase bridge 31053 Oscilloscope displays 31261 Test circuit for thermal resistance (collector cutoff current method) 31311 Thermal impedance testing setup for transistors 31312 Example curve of VBEversus TJ31313 Thermal impedance testing waveforms 31314
16、 Heating curves for two extreme devices 31315 Typical VBEdistributionProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7503 v CONTENTS FIGURE TITLE 3131A1 Analysis of a theta test 3131A2 Theta vs. tMD3131A3 Theta vs. tMD3131A4 Theta vs. tMD3131A5
17、 Theta vs. tMD31321 Test circuit for thermal resistance (dc forward voltage drop, emitter base, continuous method) 31361 Test circuit for thermal resistance (forward voltage drop, collector to base, diode method) 31611 K-factor calibration setup 31612 Thermal impedance measurement circuit (source dr
18、ain diode method) 31613 Device waveforms during the three segments of the thermal transient test 31614 Second VSD,measurement waveform 31615 Example curve of VSDbversus TJ31316 Cooling curve 31617 Heating curve and thermal model example 31618 Thermal impedance curves 31619 Delta VSD single lot histo
19、gram 316110 Summary table and sample data from five production lots 31811 Thermal resistance test circuit 32011 Test circuit for small-signal, short-circuit input impedance 32061 Test circuit for small-signal, short-circuit forward-current transfer ratio 32111 Test circuit for small-signal, open-cir
20、cuit reverse-voltage transfer ratio 32161 Test circuit for small-signal, open-circuit output admittance 32211 Test circuit for small-signal, short-circuit input admittance 32311 Test circuit for small-signal short-circuit output admittance 32361 Test circuit for open-circuit output capacitance 32401
21、 Test circuit for input capacitance (output open-circuited or short-circuited) 32511 Test circuit for pulse response, test condition A 32512 Test circuit for pulse response, test condition B 32561 Test circuit for small-signal power gain 32661 Test circuit for real part of small-signal short-circuit
22、 input impedance 33011 Test circuit for small-signal, short-circuit forward-current transfer ratio cutoff frequency 33061 Test circuit for small-signal, short-circuit forward-current transfer ratio 33201 Test equipment setup 33202 Alternate test equipment setup 33203 RF test setup 33204 Alternate ou
23、tput setup 33205 Alternate input setup 34011 Test circuit for breakdown voltage, gate-to-source 34021 Gate ESR testing setup for MOSFETs Condition B 34022 Gate ESR testing setup for MOSFETs Condition A 34031 Test circuit for breakdown voltage, gate-to-source 34041 Test circuit for n-channel MOSFETs
24、34042 Test circuit for p-channel MOSFETS 34043 Examples of curves 34051 Test circuit for drain-to-source on-state voltage 34071 Test circuit for breakdown voltage, drain-to-source 34111 Test circuit for gate reverse current 34131 Test circuit for drain current 34151 Test circuit for reverse drain cu
25、rrent 34211 Test circuit for static drain-to-source on-state resistance 34231 Test circuit for small-signal, drain-to-source on-state resistance Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-vi CONTENTS FIGURE TITLE 34311 Test circuit for small-sig
26、nal, common-source, short-circuit, input capacitance 34331 Test circuit for small-signal, common-source, short-circuit, reverse transfer capacitance 34531 Test circuit for small-signal, common-source, short-circuit, output admittance 34551 Test circuit for small-signal, common-source, short-circuit,
27、 forward admittance 34571 Test circuit for small-signal, common-source, short-circuit, reverse transfer admittance 34591 Pulse characteristics 34611 Test circuit for small-signal, common-source, short-circuit, input admittance 34701 Unclamped inductive switching circuit 34702 Unclamped inductive swi
28、tching power pulse 34711 Pulsed constant current generator 34712 Practical gate charge test circuit 34713 Gate charge characterization showing measured characteristics 34714 Gate charge, condition B 34715 Idealized gate charge waveforms, condition B 34716 Integrated Gate Charges, Condition B (Turn-O
29、n) 34717 Integrated Gate Charges, Condition B (Turn-Off) 34721 Switching time test circuit 34722 Switching time waveforms 34723 Board layout 34724 Stand alone switching circuit 34731 trrtest circuit 34732 Generalized reverse recovery waveforms 34733 Suggested board layout for low L1/R434734 Qrrtest
30、circuit 34735 Typical trrwaveform (for mnemonic reference only 34741 SOA test circuit 34751 Forward transconductance circuit 34761 Body diode test circuit 34762 Body diode waveforms 34763 Example of graphic representation 34771 Test circuit 34772 Typical clamped inductive waverforms 34781 Gate bias
31、configuration 1 34782 Gate bias configuration 2 34783 No gate bias configuration 3 34784 Actual test waveforms 34791 Test circuit 34792 Short-circuit withstand time waveform 34793 Sample graphical specification 34901 Inductive load circuit 34902 Inductive load waveform 35011 Test circuit 35051 Test
32、circuit 35101 Test system 35701 Parameter test system 35751 Forward transconductance circuit TABLE TITLE 3101I Summary of test procedure steps 3131I Summary of test procedure steps 3472I Switching time circuit parts list 3472II Switching time circuit, component layout list Provided by IHSNot for Res
33、aleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7503 vii CONTENTS TEST METHOD NO. TITLE OF ELECTRICAL CHARACTERISTICS TESTS FOR BIPOLAR TRANSISTORS 3001.1 Breakdown voltage, collector to base 3005.1 Burnout by pulsing 3011.2 Breakdown voltage, collector to emitter 3015
34、Drift 3020 Floating potential 3026.1 Breakdown voltage, collector to base 3030 Collector to emitter voltage 3036.1 Collector to base cutoff current 3041.2 Collector to emitter cutoff current) 3051 Safe operating area (continuous dc) 3052 Safe operating area (pulsed) 3053 Safe operating area (switchi
35、ng) 3061.1 Emitter to base cutoff current 3066.1 Base emitter voltage (saturated or nonsaturated) 3071 Saturation voltage and resistance 3076.1 Forward-current transfer ratio 3086.1 Static input resistance 3092.1 Static transconductance TEST METHOD NO. TITLE OF CIRCUIT-PERFORMANCE AND THERMAL RESIST
36、ANCE MEASUREMENTS 3100 Junction temperature measurement at burn-in and life test 3101.5 Thermal impedance and thermal response testing of diodes 3103 Thermal impedance measurements for insulated gate bipolar transistors 3104 Thermal resistance measurements of GaAs MOSFETs (constant current forward-b
37、iased gate voltage method) 3105.1 Measurement method for thermal resistance of a bridge rectifier assembly 3126 Thermal resistance (collector cutoff current method) 3131.6 Steady state thermal impedance and transient thermal impedance testing of transistors (delta base emitter voltage method) 3132 D
38、C forward voltage drop, emitter base, continuous method 3136 Thermal resistance (forward voltage drop, collector to base, diode method 3141 Thermal response time 3146.1 Thermal time constant 3151 Thermal resistance, general 3161.1 Thermal impedance measurements for vertical power MOSFETs (delta sour
39、ce drain voltage method) 3181 Thermal resistance for thyristors Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-viii CONTENTS TEST METHOD NO. TITLE OF LOW FREQUENCY TESTS 3201.1 Small-signal, short-circuit input impedance 3206.1 Small-signal, short-c
40、ircuit forward-current transfer ratio 3211 Small-signal, open-circuit reverse-voltage transfer ratio 3216 Small-signal, open-circuit output admittance 3221 Small-signal, short-circuit input admittance 3231 Small-signal, short-circuit output admittance 3236 Open-circuit output capacitance 3240.1 Inpu
41、t capacitance (output open-circuited or short-circuited) 3241 Direct interterminal capacitance 3246.1 Noise figure 3251.1 Pulse response 3255 Large-signal power gain 3256 Small-signal power gain 3261.1 Extrapolated unity-gain frequency 3266 Real part of small-signal, short-circuit input impedance TE
42、ST METHOD NO. TITLE OF HIGH FREQUENCY TESTS 3301 Small-signal, short-circuit, forward-current transfer ratio cut off frequency 3306.4 Small-signal, short-circuit forward-current transfer ratio 3311 Maximum frequency of oscillation 3320 Radio frequency (RF) power output, RF power gain, and collector
43、efficiency Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7503 ix CONTENTS TEST METHOD NO. TITLE OF ELECTRICAL CHARACTERISTICS TESTS FOR MOS FIELD-EFFECT TRANSISTORS 3401.1 Breakdown voltage, gate-to-source 3402 MOSFET gate equivalent series r
44、esistance 3403.1 Gate-to-source voltage or current 3404 MOSFET threshold voltage 3405.1 Drain-to-source on-state voltage 3407.1 Breakdown voltage, drain-to-source 3411.1 Gate reverse current 3413.1 Drain current 3415.1 Drain reverse current 3421.1 Static drain-to-source on-state resistance 3423 Smal
45、l-signal, drain-to-source on-state resistance 3431 Small-signal, common-source, short-circuit, input capacitance 3433 Small-signal, common-source, short-circuit, reverse transfer capacitance 3453 Small-signal, common-source, short-circuit, output admittance 3455 Small-signal, common-source, short-ci
46、rcuit, forward transadmittance 3457 Small-signal, common-source, short-circuit, reverse transfer admittance 3459 Pulse response field-effect transistor (FET) 3461 Small-signal, common-source, short-circuit, input admittance 3469 Repetitive unclamped inductive switching 3470.2 Single pulse unclamped
47、inductive switching 3471.3 Gate charge 3472.2 Switching time test 3473.1 Reverse recovery time (trr) and recovered charge (qrr)for power mosfet (drain-to-source) and power rectifiers with trr100 ns 3474.1 Safe operating area for power MOSFETs or insulated gate bipolar transistors 3475.2 Forward tran
48、sconductance (pulsed dc method) of power mosfets or insulated gate bipolar transistors 3476 Test procedure for measuring dv/dt during reverse recovery of power MOSFET transistors 3477.1 Measurement of insulated gate bipolar transistor total switching losses and switching times 3478 Power transistor electrical dose rate 3479 Short-circuit withstand time 3490 Clamped inductive switching safe operating area for MOS gated power transistors TES
