1、 INCHPOUND MILSTD7504 3 January 2012 SUPERSEDING MILSTD750E (IN PART) 20 November 2006 (see 6.4) DEPARTMENT OF DEFENSE TEST METHOD STANDARD DIODE ELECTRICAL TEST METHODS FOR SEMICONDUCTOR DEVICES PART 4: TEST METHODS 4000 THROUGH 4999 AMSC N/A FSC 5961 The documentation and process conversion measur
2、ed necessary to comply with this revision shall be completed by 3 July 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7504 ii FOREWORD 1. This standard is approved for use by all Departments and Agencies of the Department of Defense. 2.
3、This entire standard has been revised. This revision has resulted in many changes to the format, but the most significant one is the splitting the document into parts. See MILSTD750 for the change summary. 3. Comments, suggestions, or questions on this document should be addressed to: Commander, Def
4、ense Logistics Agency, DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil. Provi
5、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7504 iii CONTENTS PARAGRAPH PAGE FOREWORD.ii 1. SCOPE 1 1.1 Purpose . 1 1.2 Numbering system 1 1.2.1 Classification of tests . 1 1.2.2 Test method revisions . 1 1.3 Methods of reference 1 2. APPLICABLE
6、 DOCUMENTS . 2 2.1 General . 2 2.2 Government documents 2 2.2.1 Specifications, standards, and handbooks 2 2.3 Non-Government publications . 2 2.4 Order of precedence . 2 3. DEFINITIONS 3 3.1 Acronyms, symbols, and definitions 3 3.2 Acronyms used in this standard 3 4. GENERAL REQUIREMENTS 5 4.1 Gene
7、ral . 5 4.2 Test conditions for electrical measurements . 5 4.2.1 Steady-state dc measurements (test method series 4000) . 5 4.2.2 Pulse measurements (test method series 4000) . 5 4.2.3 Electrical characteristics tests for microwave diodes (test method series 4100) . 5 4.2.4 Test circuits . 5 4.3 No
8、ndestructive tests 6 4.4 Destructive tests 6 4.5 Laboratory suitability . 6 5. DETAILED REQUIREMENTS 6 6. NOTES . 6 6.1 Intended use . 6 6.2 International standardization agreement . 6 6.3 Subject term (key word) listing 6 6.4 Supersession data. 6 Provided by IHSNot for ResaleNo reproduction or netw
9、orking permitted without license from IHS-,-,-MILSTD7504 iv CONTENTS FIGURE TITLE 40011 Test circuit for capacitance 40111 Test circuit for forward voltage 40161 Test circuit for reverse current leakage (dc method) 40162 Test circuit for reverse current leakage (ac method) 40211 Test circuit for bre
10、akdown voltage (diodes) 40221 Test circuit for breakdown voltage (voltage regulators and voltage reference diodes) 40231 Ideal reverse trace 40232 Soft knee 40233 Drift 40234 Slope 40235 Double break (reject criteria for sharp knee devices 40236 Double trace 40237 Double trace, soft knee 40238 Unsta
11、ble (jitter) 40239 Discontinuity 402310 Snap back collapsing VBR402311 Floater 402312 Arcing 40261 Test circuit for forward recovery voltage and time 40311 Test circuit for condition A 40312 Response pulse waveforms for condition A 40313 Test circuit for condition B 40314 Suggested board layout for
12、low L1/R4 for condition B 40315 Current through DUT (condition B) 40316 Circuit for measuring reverse recovery characteristics (condition C) 40317 Test current waveforms for various types of rectifier diodes under test in the circuit for measuring reverse recovery characteristics 40318 trrtest circu
13、it for condition D 40319 Suggest board layout for low L1/R4for condition D 403110 Generalized reverse recovery waveforms for condition D 40361 Test circuit for measuring Q 40411 Test circuit for rectification efficiency 40461 Test circuit for reverse current, average 40511 Test circuit for small-sig
14、nal reverse breakdown impedance 40561 Test circuit for small-signal forward impedance 40611 Test circuit for stored charge 40641 Test Circuit 1 40642 Test Circuit 1 response 40643 Test Circuit 2 40644 Test Circuit 2 response 40651 Rectangular current pulse test setup 40652 Rectangular 20s Current Pu
15、lse Waveform 40653 Voltage response 40661 Surge pulse applied to continuous halfwave conditions (condition A1) 40662 Surge pulse applied to continuous dc conditions (condition A2) 40663 Rectangular current pulse test setup 40664 Rectangular current pulse waveforms 40665 Clamping voltage test circuit
16、 40666 Standard current impulse waveshape 40761 Test circuit for saturation current Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7504 v CONTENTS FIGURE TITLE 40811 Test circuit 40812 Axial-leaded mounting arrangement 40813 Case mounting arra
17、ngement (stud packages) 40814 Case mounting arrangement (TO-3 or TO-66) 40815 Surface-Mount arrangement and Temperature Sensing Location (SMD) 40816 Surface-Mount arrangement and Temperature Sensing Location (LCC) 4081A1 Analysis of theta test 4081A2 Theta vs. tMD4081A3 Theta vs. tMD4081A4 Theta vs.
18、 tMD4081A5 Theta vs. tMD41011 Test setup for incremental measurement 41012 Open circuit for the incremental measurement 41013 Test setup for heterodyne measurement 41014 Test setup for modulation measurement 41061 Test circuit for detector power efficiency 41111 Test setup for figure of merit measur
19、ement 41161 AC method 41162 Impedance bridge method 41211 Direct measurement method 41212 Y-factor method 41261 Test setup for overall noise figure 41311 Constant voltage method 41312 Constant current method 41313 Pulsed RF method 41314 Continuous wave RF method 41361 Slotted line method 41362 Refle
20、ctometer method 41411 Test setup for repetitive pulsing 41461 Burnout by single pulse 42011 Test circuit for holding current 42061 Test circuit for forward blocking current (dc method) 42062 Test circuit for forward blocking current (ac method) 42111 Test circuit for reverse blocking current (dc met
21、hod) 42112 Test circuit for reverse blocking current (ac method) 42161 Test circuit for pulse response 42191 Test circuit for reverse gate current 42211 Test circuit for gate-trigger voltage or gate-trigger current 42231 Test circuit for gate-controlled turn-on time 42232 Waveforms, gate-controlled
22、turn-on time 42241 Circuit-commutated turn-off time waveforms 42242 Test circuit for circuit-commutated turn-off time 42251 Gate turn-off test circuit 42252 Typical gate turn-off circuit waveforms 42261 Test circuit for forward on voltage 42311 Test circuit for exponential rate of voltage rise 42312
23、 Waveforms across the DUT 43011 Test circuit for junction capacitance 43061 Test circuit for static characteristics of tunnel diodes (dc method) 43062 Test circuit for static characteristics of tunnel diodes (ac method) 43063 Typical tunnel diode forward characteristic Provided by IHSNot for ResaleN
24、o reproduction or networking permitted without license from IHS-,-,-MILSTD7504 vi CONTENTS FIGURE TITLE 43161 Test circuit for series inductance 43211 Test circuit for negative resistance, short-circuit stable method 43212 Test circuit for negative resistance, open-circuit stable method 43261 Test c
25、ircuit for series resistance 43311 Test circuit for switching time TABLE TITLE 40311 Test condition B 4031II Test condition D TEST METHOD NO. TITLE OF ELECTRICAL CHARACTERISTICS TESTS FOR DIODES 4000 Condition for measurement of diode static parameters 4001.1 Capacitance 4011.4 Forward voltage 4016.
26、4 Reverse current leakage 4021.2 Breakdown voltage (diodes) 4022 Breakdown voltage (voltage regulators and voltage-reference diodes) 4023.2 Scope display 4026.4 Forward recovery voltage and time 4031.5 Reverse recovery characteristics 4036.1 Quality factor (Q) for voltage variable capacitance diodes
27、 4041.2 Rectification efficiency 4046.1 Reverse current, average 4051.3 Small-signal reverse breakdown impedance 4056.2 Small-signal forward impedance 4061.1 Stored charge 4064.1 Inductive avalanche energy test for diodes 4065 Peak reverse power test 4066.5 Surge current and impulse clamp voltage 40
28、71.1 Temperature coefficient of breakdown voltage 4076.1 Saturation current 4081.4 Thermal resistance of diodes (forward voltage, switching method TITLE OF ELECTRICAL CHARACTERISTICS TESTS FOR MICROWAVE DIODES 4101.3 Conversion loss 4102 Microwave diode capacitance 4106 Detector power efficiency 411
29、1.1 Figure of merit (current sensitivity) 4116.1 Intermediate frequency (IF) impedance 4121.2 Output noise ratio 4126.2 Overall noise figure and noise figure of the IF amplifier 4131.1 Video resistance 4136.1 Standing wave ratio (SWR) 4141.1 Burnout by repetitive pulsing 4146.1 Burnout by single pul
30、se 4151 Rectified microwave diode current Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7504 vii CONTENTS TEST METHOD NO. TITLE OF ELECTRICAL CHARACTERISTICS TESTS FOR THYRISTORS (CONTROLLED RECTIFIERS) 4201.2 Holding current 4206.1 Forward b
31、locking current 4211.1 Reverse blocking current 4216 Pulse response 4219 Reverse gate current 4221.1 Gate-trigger voltage 4223 Gate-controlled turn-on time 4224 Circuit-commutated turn-off time 4225 Gate-controlled turn-off time 4226.1 Forward on voltage 4231.2 Exponential rate of voltage rise TITLE
32、 OF ELECTRICAL CHARACTERISTICS TESTS FOR TUNNEL DIODES 4301 Junction capacitance 4306.1 Static characteristics of tunnel diodes 4316 Series inductance 4321 Negative resistance 4326 Series resistance 4331 Switching time Provided by IHSNot for ResaleNo reproduction or networking permitted without lice
33、nse from IHS-,-,-MILSTD7504 viii This page intentionally left blank. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7504 1 1. SCOPE 1.1 Purpose. Part 4 of this test method standard establishes uniform test methods for the basic electrical test
34、ing of semiconductor diodes to determine resistance to deleterious effects of natural elements and conditions surrounding military operations. For the purpose of this standard, the term “devices“ includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other rel
35、ated parts. This part of a multipart test method standard is intended to apply only to semiconductor devices. 1.2 Numbering system. The test methods are designated by numbers assigned in accordance with the following system: 1.2.1 Classification of tests. The electrical test methods included in this
36、 part are numbered 4000 to 4999 inclusive. 1.2.2 Test method revisions. Test method revisions are numbered consecutively using a period to separate the test method number and the revision number. For example, 4011.4 designates the fourth revision of test method 4011. 1.3 Method of reference. When ap
37、plicable, test methods contained herein shall be referenced in the individual specification or specification sheet by specifying the test method number, and the details required in the summary of the applicable test method shall be listed. To avoid the necessity for changing specifications that refe
38、r to this test methods of this standard, the revision number should not be used when referencing test methods. (For example: Use 4011 versus 4011.4.) Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILSTD7504 2 2. APPLICABLE DOCUMENTS 2.1 General. Th
39、e documents listed in this section are specified in sections 3, 4, 5, and the individual test methods of this standard. This section does not include documents cited in other sections of this standard or recommended for additional information or as examples. While every effort has been made to ensur
40、e the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3, 4, 5, and the individual test methods of this standard, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks
41、. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devices, Gen
42、eral Specification for. DEPARTMENT OF DEFENSE STANDARDS MILSTD750 Test Methods For Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Build
43、ing 4D, Philadelphia, PA 19111-5094.) 2.3 Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASME INTERNATIONAL (ASME) ASME Y14.38
44、 Abbreviations and Acronyms for Use on Drawings and Related Documents. (Copies of these documents are available online at http:/www.asme.org or from ASME International, Three Park Avenue, New York, NY 100165990.) JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JEDEC JESD320 Conditions for Measureme
45、nt of Diode Static Parameters. (Copies of this document are available online at http:/www.jedec.org or from JEDEC, 3103 North 10thStreet, Suite 240-S Arlington, VA 222012107.) 2.4 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of th
46、is document and the references cited herein (except for related applicable specification sheet, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo rep
47、roduction or networking permitted without license from IHS-,-,-MILSTD7504 3 3. DEFINITIONS 3.1 Abbreviations, symbols, and definitions. For the purposes of this part of the test method standard, the abbreviations, symbols, and definitions specified in MILPRF19500, ASME Y14.38, and herein shall apply
48、. 3.2 Acronyms used in this standard. Acronyms used in this part of the test method standard are defined as follows: a. ATE Automatic test equipment. b. CFM Cubic feet per minute. c. CHLD Cumulative Helium Leak Detector. d. DUT Device under test. e. ESD Electrostatic discharge. f. ESDS Electrostatic discharge sensitivity. g. FET Field-effect transistor. h. FIST Forward instabi
