1、, - lIL-1-385LOJ 59 9999706 0496349 8 -1 conversion measures necessary to comply with this revision shall be completed by 15 May 1992. (IWCH-PWHDI MIL-M-38510J 15 November I991 SUPERSEDING MIL-M-38510H 12 February 1988 MILITARY SPECIFICATION MICROCIRCUITS, GENERAL SPECIFICATION FOR This specificatio
2、n is approved for use by all Depart- ments and Agencies of the Department of Defense. This specification is intended to support Govermnt microcircuit applica- tion and logistic programs. Detai led Characteristics of microcircuits needed for a program are to be defined by detail drawings or specifica
3、tions. . 1. SCOPE 1.1 scope. This specification establishes the general requirements for monolithic, multichip, and hybrid microcircuits and the quality and reliability assurance requirements which must be met in the acquisition of microcircuits. Detai 1 requirements, specific characteristics of mic
4、rocircuits, and other provisions which are sensitive to the particular use intended shall be specified in the applicable device specification. Multiple levels of product assurance requirements and control for monolithic and multichip microcircuits and two levels for hybrid microcircuits are provided
5、 for in this specification. 2. APPLICABLE DOCUMENTS 2.1 Govermnt documents. 2.1.1 Swcifications. standards, and handbooks. form a part of this docunent to the extent specified herein. these docwnts shall be those listed in the issue of the Department of Defense Index of Specifications and Standards
6、(DOOISS) and supplement-thereto, cited in the solicitation (see 6.2). The following specifications, standards, and handbooks Unless otherwise specified, the issues of SPECIFICATIONS MILITARY MIL-1-23011 - Iron-Nickel Alloys for Sealing to Glass and Ceramics. MIL-N-46025 - Nickel Bar, Flatwire (Ribbo
7、n) and Strip (for Electronic Use). MIL-N-46026 - Nickel, Rod and Wire (Round) (for Electronic Use). MIL-M-46058 - Insulating Compound, Electrical (For Coating Printed Circuit Assenibl ies). MIL-M-55565 - Microcircuits, Packaging of. (See supplement 1 for list of associated detail specifications.) ST
8、ANDARDS MI LI TARY MIL-STD-129 - Marking for Shipment and Storage. MIL-STD-280 - Definitions of Item Levels, Item Exchangeability, Models and MIL-STD-883 - Test Methods and Procedures for Microelectronics. Related Terms. Beneficial cmnts (recmndations, additions, deletions) and any pertinent data wh
9、ich may be of use in improving this docunent should be addressed to: Laboratory (RL/ERSS), Griffiss AFB, NY 13441-5700, by using the Standardization Docunent Improvement Proposal (DD Form 1426) appearing at the end of this docunent or by letter. Rome AMSC N/A FSC 5962 DISTRIBUTION STATEMENT A. Appro
10、ved for public release; distribution is unlimited. - . c Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MI I.-M-385 1 OJ MIL-STD-976 - Certification Requirements for Microcircuits. MIL-STR-1285 - Marking of Electrical and Electronic PartS. MIL-STD-1
11、351 - MIL-STD-1772 - Certification Requirements for Hybrid Microcircuits Facilities and Lines. MIL-STD-1835 - Microcircuit Case Outlines. Parameters to be Controlled for the Specification of Microcircuits. (Unless otherwise indicated, copies of federal and-mi litary specifications, standards and han
12、dbooks are available from the Standardiretion Documents Order Desk, Building 4D, 700 Robbins Avenue, Philadelphia, PA 19111-5094. Not more than five itemmay be ordered on a single request; the invitation for bid or contract nunber should be cited where applicable. Only latest revisions (ccnnplete wi
13、th latest amenrinents). are available; slash sheets mist be individually requested. infsrmation on subscription service, direct inquiries to the, above address or telephone (215) 697-3321, inquiry desk. drawings, and publications form a*part of this docunent to the extent specified herein. Unless ot
14、herwise specified, the issues shall be those cited in the solicitation, Handbook H4/H8 - Comercial and Goverment Entity (CAGE) Handbook. MIL-BUL-103 - List of Standardized Military Drawings (SMDIS). DLAM 8200.2 NAVSHIPS 0967-190-4010 - Manufacturer“s Designating Symbols. Request all items by documen
15、t nunber. For 2.1.2 Other Government docunents, drawings, and wblications. The fol lowing other Government docunents, - Procurement Quality Assurance Support Manual for Defense Contract Administration Servi ce. (Copies of specifications, standards, and other Government docunents required by contract
16、or$ in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activjty. specified herein. Unless otherwise specified: the issues of the docunents which are ROO adopted are those listed in the issue of the DpaISS cited in the
17、solicitation. Unless otherwise specified, the issues of docunents not listed in the-DODISS are the issues. of the docunents cited in-the solicitation (see 6.2). 2.2 Non-Government wblications. The following docunent(s) form a. part of this docunent to the extent AMERICAN SOCIETY FOR TESTiN AND MATER
18、IALS (ASTH) ASTH FI5 ASTM F30 ASTM BI70 ASTM 6487-79 ASTM 6567-79A ASTM 8568 - Iron-Nickel-Cobalt Sealing Alloy, Specification foc. - Iron-Nickel Sealing Alloy, Specif.ication fop. - Oxygen-Free Electrolytic Copper,. Refiner for digital: Logic gate buffer, flip-flop, combinational gate, sequential r
19、egister/counter) within a given circuit technology (e the same die attach method; and by use of bonding interconnects of the same size, material and attachment method. defective which will permit the lot to be accepted after the specified 100 percent test. 3.1.3.14 Percent defective allowable (PDA).
20、 Percent defective allowable is the maxim observed percent L L 4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-3B51OJ 59 = 9999906 0496153 T I/ - MI L -H-3851 O J 3.1.3.15 Delta (A) limit. The maxim change in a specified parameter reading uhi
21、ch will permit a device to be accepted on the specified test, based on a conparison of the present measurement with a specified previous measurement. Note: Yhen expressed as a percentage value, it shall be calculated as a proportion of the previous measured value. 3.1.3.16 Rework. Any processing or
22、reprocessing operation docwnted in accordance with appendix A, 30.1.1.6h, other than testing, applied to an individual device, or part thereof, and performed subsequent to the prescribed nonrepairing manufacturing operations which are applicable to all devices of that type at that stage. 3.1.3.17 Fi
23、nal seal. 3.1.3.18 Acauirinn activity. The organizational element of the Goverrunent which contracts for articles, A contractor or subcontractor serving as agent of the acquiring activity shall not That manufacturing operation which conpletes the enclosure of a device so that further internal proces
24、sing cannot be performed without disassembling the device. supplies, or services; or it may be a contractor or subcontractor when the organizational element of the Government has given specific written authorization to such contractor or subcontractor to serve as agent of the acquiring activity. hav
25、e the authority to grant waivers, deviations, or exceptions to this specification unless specific written authorization to do so has also been given by the Government organization (i.e., preparing activity, qua I i f ying act ivi ty) . 3.1.3.19 Qualifying activity. qualification for the specific ass
26、ociated end-product in accordance with this specification and the applicable detail specification. The organizational element of the Government that grants certification and 3.1.3.20 Device tm. The term device type refers to a single specific microcircuit configuration. Samples of the same device ty
27、pe will be electrically and functionally interchangeable with each other at the die or substrate level even though made by different manufacturers using different mechanical layouts and possibly different materials. The electrical and enviromiental limits will be the same (but not necessarily the in
28、herent reliability) for a given device type even though the device class, he case outline, the lead finish, the lot identification code, and the manufacturer may be different (see 3.6.2). appear on only one device specification but that detail specification may also specify other similar devi ces. A
29、 given type shall 3.1.3.21 Die type. A microcircuit manufactured using the same physical size, materials, topology, mask set, and process flow, on a single fabrication line. 3.1.3.22 Antistatic. An antistatic material resists triboelectric charging upon contact and separation impregn ted with antist
30、atic agents (antistats) are antistatic if with another material. Plastic material their surface resistivity is betueen 10 Q and 10 ohms/square. 3.1.3.23 Conductive. A conductive material is one capable of electrostatic field shielding and having a volume resistivity of 10 3 ohm-cm maxim or a surface
31、 resistivity less than 10 5 ohms/square. 3.1.3.24 Insulating. An insulating Rterial is defined as having a volune resistivity of 10l2 ohm-cm minim, or a surface resistivity of 10 ohrns/square minim. 3.1.3.25 Dissipative. A dissipative material is defined as having a surface resistivity between 10 5
32、and 10 ohms/square. 3.1.3.26 Radiation hardness assurance (RHA). The portion of product assurance which insures that parts continue to perform as specified or degrade in a specified manner when subjected to the specified radiation environmental stress. 3.1.3.27 Electrostatic discharge sensitivity (E
33、SDSL. Electrostatic discharge sensitivity is defined as The level of susceptibility of a the level of susceptibility of a device to damage by static electricity. device is found by ESDS classification testing and is used as the basis for assigning an ESDS class (see 3.4.1.4). 5 Provided by IHSNot fo
34、r ResaleNo reproduction or networking permitted without license from IHS-,-,-NIL-M-385LOJ 59 9979906 049bL.54 L Ei i b c MIL-M-38flOJ 3.1.3.28 Custom microcircuits. A nonstanderd microcircuit, the design, and right(s) to the design (for example, ownership, control, or proprietary rights) of which ar
35、e under the control of the purchaser-user of the microcircuit, 3.1.3.29 Die family. All devices manufactured by the same besic process (e.g., low power Schottky, HCMOS, FAST) as specified in appendix E. * 3.1.3.30 Package family. A set of package types with the same package configuration (e however,
36、 all shipments of these changed devices, shall be withheld until approval is granted by the qualifying activity. The qualifying activity shall be notified of the first lot incorporating the changeW. Changes representative of those which are subject to this requirement are any basic design changes in
37、 the manufacturing process such as: a. Doping material source and concentration changes or process technique changes (e.g., ion implantat ion versus diffusion). b. Cross section diffusion profile changes. c. Die structure topography changes (e.g., double-diffused, epitaxial, isolation). 12 Provided
38、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-. d. e. f. 9. h. i. j. k. 1. m. n. O. P. 4- r. S. t. U. V. W. X. Y. 2. MI L -M-385 1 OJ Mask changes or redesign which alter die size or active element dimensions, spacing, or isolation. Change in passivation or
39、 glassivation material, thickness, or technique (including addition or deletion of passivation). Metallization change (pattern, material, nunber of layers, deposition technique, line width or thickness and thick film drying and firing environments and temperature profiles). Change in die or sibstrat
40、e or element attach material, method, or location. Significant change in die or element attach process temperature. Wire bond method changes (ultrasonic versus thermal conpression). Changes in wire material composition and dimensions. Package or lid structure and material changes or changes to the i
41、nternal cavity geometry, or lead frame design change. Seal technique changes (materials or sealing process). and cleaning of frame. Implementation procedures for internal visual and other test methods. Critical docunents (see appendix A, 30.1.3b). Hybrid or multichip substrate material and surface f
42、inish quality. Conductor, resistor or dielectric materials. Change or substitution of die or other elements mounted on the hybrid or multichip substrate. Hybrid screen or mask design changes that alter dimensions, electrical parameters, spacing, or i sol at i on. Element trimning methods and process
43、es. Methods and materiats used to clean hybrids. Uafer fabrication move from one line or building to another. Assembly operation move from one line or building to another. Test facility (with laboratory suitability) move from one facility or building to another. Scribing and die separation method. Q
44、ualification or quality conformance inspection procedures including manufacturer imposed tests (see 4.3.7). Change in passivation process temperatureftime for RHA products. This includes lid, lead seals, freme attach aa. Change in diffusion process temperature/time for RHA products. bb. Change in si
45、ntering or annealing temperature/time for RHA products. * 3.4.3 Screening. for quality conformance in accordance with this specification shall have been subjected to, and passed, all the screening tests detailed in method 5004, 5008, or 5010 of MIL-STD-883 for the type of microcircuit and quality as
46、surance level (device class) specified. substitute for any specified screening test except uhen the approved SPC program utilized for JAN microcircuits (see 3.4.1.2.6) indicates sanpling is an acceptable substitute. All tests, preconditioning and screening operations which were performed on microcir
47、cuits submitted for qualification inspection, in All microcircuits to be delivered or suhitted for part I qualification or submitted Sampling inspections shall not be an acceptable 13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-M-38510J accor
48、dance with method 5005 of ML-STD-883, shall be performed on all devices subsequently submitted for quality conformance inspection (see 4.5). 3.4.4 Pualitv conformance instxction. Microcircuits shall not be accepted or approved for delivery until the inspection lot has passed quality conformance insp
49、ection (see 4.5). * TABLE 1. Testing guidelines for changes identified as major. Changes in accordance with 3.4.2 herein - a. b. C. d. e. f. 9- h. i. j. k. loping material source Concent rat i on rocess Technique liffusion profile lie structure lask changes affecting die sire or active elmnt Wafer diameter Final die thickness bassi vat i on/ leteilization changes lie attach method lie attach process land process glass ivat ion lond wire material limensi on lackage or lid structure
