1、 MIL-PRF-19500/182H 12 August 2011 SUPERSEDING MIL-PRF-19500/182G 2 August 2006 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N720A, 2N720AUB, 2N1893, AND 2N1893S, JANS, JAN, JANTX, JANTXV, JANHC2N720A, JANKC2N720A, JANSM, JANSD, JANSP, JANSL, JA
2、NSR, JANSF, JANSG, JANSH JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH. This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product
3、 described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for for NPN silicon, low-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500, t
4、wo levels of product assurance are provided for die. Radiation hardness assurance (RHA) level designators “M”, “D”, “P“, “L” “R”, “F, “G”, and “H” are appended to the device prefix to identify devices which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 (similar to TO-18) figure
5、 2 (similar to TO-5), figure 3 (UB ), and figure 4 (JANHC and JANKC die layout). * 1.3 Maximum ratings unless otherwise specified TA= +25C. Type PT1(1) (2) TC= +25C PT2(3) (4) TA= +25C PT3(3) (4) TSP= +25C RJARJCRJSP(IS)VCBO VCEOVEBOICTJand TSTG2N720A 2N720AUB 2N1893 2N1893S W 1.8 1.16 3.0 3.0 W 0.5
6、 0.8 0.8 W 0.5 C/W 325 325 195 195 C/W 97 58 58 C/W 150 V dc 120 120 120 120 V dc 80 80 80 80 V dc 7 7 7 7 mA dc 500 500 500 500 C -65 to +200 (1) Derate linearly at 10.3 mW/C for type 2N720A, 6.63 mW/C for type 2N720AUB and see figure 5 (TO-5) for type 2N1893 and 2N1893S for TC +25C. (2) For therma
7、l impedance curve, for 2N1893 and 2N1893S see figure 6 (TO-18) for TC +25C. (3) Derate linearly at 3.08 mW/C for types 2N720A and 2N720AUB; TA +37.5C and see figure 7 (TO-5) for types 2N1893 and 2N1893S for TA +60C. (4) For thermal impedance curve, for 2N1893 and 2N1893S see figure 8 (TO-18) for TA
8、+25C. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of
9、this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 12 November 2011. Provided by IHSNot for ResaleNo reproduction or networking permitted without lice
10、nse from IHS-,-,-MIL-PRF-19500/182H 2 1.4 Primary electrical characteristics. Limits hFE1 (1) hFE2 (1) hFE3(1) hfe VCE(SAT)(1) Vce= 10 V dc IC= 0.1 mA dc Vce= 10 V dc IC= 10 mA dc Vce= 10 V dc IC= 150 mA dc f = 20 MHz Vce= 10 V dc IC= 50 mA dc IC= 50 mA dc IB= 5.0 mA dc Min Max 20 35 40 120 3.0 10 V
11、 dc 1.2 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as
12、examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specificati
13、ons, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-1
14、9500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document
15、Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in t
16、his document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/182H 3 Ltr Dimensions Notes Inches Millimeters Min Max Min Max CD .178 .195
17、 4.52 4.95 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 5 LD .021 0.53 3, 8 LL .500 12.70 8, 9 LU .016 .019 0.41 0.48 3, 8, 9 L1.050 1.27 9 L2.250 6.35 9 P .100 2.54 Q .030 0.76 4 TL .028 .048 0.71 1.22 7 TW .036 .046 0.91 1.17 r .010 0.25 45 TP 45 TP NOTES: 1. Dimensions are in
18、inches. 2. Millimeters equivalents are given for general information only. 3. Measured in the zone beyond .250 inch (6.35 mm) from the seating plane. 4. Details of outline in this zone are optional. 5. When measured in a gauging plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below the seating pla
19、ne of the transistor, maximum diameter leads shall be within .007 inch (0.18 mm) of their true location relative to a maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead tolerance. 6. The collector shall be internally connected to the case. 7. Measure
20、d from the maximum diameter of the actual device. 8. All three leads. 9. Symbol LU applies between L1and L2. Dimension LD applies between L2and LL minimum. Lead diameter shall not exceed .042 inch (1.07 mm) within L1and beyond LL minimum. 10. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 11.
21、In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for device type 2N720A (TO-18). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/182H 4 Dimensions Symbol Inches Millimeters Notes Min
22、 Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP 6 LD .016 .021 0.41 0.53 7, 8 LL See notes 7, 8, 11,12 LU .016 .019 0.41 0.48 7, 8 L1.050 1.27 7, 8 L2.250 6.35 7, 8 P .100 2.54 5 Q .050 1.27 4 r .010 0.25 10 TL .029 .045 0.74 1.14 3 TW .028 .034 0
23、.71 0.86 2 45 TP 45 TP 6 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD,
24、and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. Dimension LU applies between L1and L2. Dimension LD applies between L2and LL
25、minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. For 2N1893, dimension LL shall be 1.5 inches (38.1mm) minimum and 1.75 inches (44.4 mm) ma
26、ximum. 12. For 2N1893S, dimension LL shall be .5 inch (12.7mm) minimum and .75 inch (19.0 mm) maximum. 13. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 14. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 2. Physical dimensions for device types 2N1893 and 2N189
27、3S (similar to TO-5). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/182H 5 Dimensions Symbol Inches Millimeters Note Min Max Min Max BH .046 .056 1.17 1.42 BL .115 .128 2.92 3.25 BW .085 .108 2.16 2.74 CL .128 3.25 CW .108 2.74 LL1 .0
28、22 .038 0.56 0.96 LL2 .017 .035 0.43 0.89 LS1 .036 .040 0.91 1.02 LS2 .071 .079 1.80 2.01 LW .016 .024 0.41 0.61 r .008 .203 r1 .012 .305 r2 .022 .559 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Hatched areas on package denote metallized areas. 4. Pa
29、d 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid. 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 3. Physical dimensions, surface mount (2N720AUB). UB Provided by IHSNot for ResaleNo reproduction or networking permitted without
30、 license from IHS-,-,-MIL-PRF-19500/182H 6 Die size: .030 x .030 inch (0.76 mm x 0.76 mm). Die thickness: .008 .0016 inch (0.20 mm 0.041 mm). Base pad .004 x .010 inch (0.10 mm x 0.254 mm). Emitter pad: .0023 x .007 inch (0.058 mm x 0.18 mm). Back metal: Gold, 6.5 k 1.95 k. Top metal: Aluminum, 12 k
31、. Minimum; 14.5 k. nominal. Back side: Collector. Glassivation: SiO2, 7.5 k 1.5 k. NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 4. JANHCA2N720A and JANKCA2N720A die
32、 dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/182H 7 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under
33、this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions
34、used herein shall be as specified in MIL-PRF-19500 and as follows. RJAThermal resistance junction to ambient. RJCThermal resistance junction to case. UB Surface mount case outlines (see figure 3). 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-P
35、RF-19500, and on figures 1, 2, 3, and 4. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). * 3.4.2 Marking. Devices shall be marked in ac
36、cordance with MIL-PRF-19500. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required).
37、 * 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1
38、.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability
39、, or appearance. * 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). * c. Conformance inspection (see 4.4 and tables I and II). Provided by IHSNot for ResaleNo repr
40、oduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/182H 8 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qu
41、alification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this rev
42、ision to maintain qualification. 4.2.2 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. * 4.3 Screening (list applicable JANS, JANTX, and JANTXV levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specifi
43、ed herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS JANTX and JANTXV levels (1) 3a Thermal impedance (see 4.3.2). Thermal impedance (
44、see 4.3.2). 7 Optional Optional 9 ICBO2, hFE3Not applicable 11 ICBO2, hFE3 ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater; hFE3= 15 percent of initial value. ICBO2, hFE312 See 4.3.1. See 4.3.1. 13 ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater; hFE3= 15 pe
45、rcent of initial value, subgroup 2 and 3 of table I herein. ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater; hFE3= 15 percent of initial value, subgroup 2 of table I herein. 14 Required Required (1) Shall be performed anytime after temperature cycling, screen 3a; and does not ne
46、ed to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10 - 30 V dc. Power shall be applied to achieve TJ= +135C minimum using a minimum PD= 75 percent of PTmaximum rated as defined in 1.3. With approval of the qualifying activity a
47、nd preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the manufacturing sites burn-in data and performance history will be essential
48、criteria for burn-in modification approval. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s
49、 max. See group E, subgroup 4 herein. 4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. As a minimum, die shall be 100-percent probed to ensure compliance with group A, subgroup 2. Burn-in duration for th
