1、 MIL-PRF-19500/297H 9 November 2009 SUPERSEDING MIL-PRF-19500/297G 25 July 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N1184, 1N1186, 1N1188, 1N1190, 1N3766, 1N3768, 1N1184R, 1N1186R, 1N1188R, 1N1190R, 1N3766R, 1N3768R, JAN, JANTX, AND JANTXV Th
2、is specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for s
3、ilicon semiconductor power rectifier diodes. Three levels of product assurance are provided for each device as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (DO-5). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type VRVRMIO(1) TC= 150C If (surge) at 1/120 s TC= 150C
4、Barometric pressure (reduced) RJCStorage temp. TCJunction temp. TJ1N1184, R 1N1186, R 1N1188, R 1N1190, R 1N3766, R 1N3768, R V dc 100 200 400 600 800 1,000 V (pk) 100 200 400 600 800 1,000 A dc 35 35 35 35 35 35 A 500 500 500 500 500 500 mmHg 8 8 8 16 30 54 C/W max 0.8 0.8 0.8 0.8 0.8 0.8 C -65 to
5、+175 C -65 to +175 (1) Derate linearly 1.4 A dc/C between TC= 150C to TC= 175C. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconducto
6、rdscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 9 Februa
7、ry 2010. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/297H 2 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include document
8、s cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of
9、 this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents
10、 are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/assi
11、st.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil. or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this
12、document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MI
13、L-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3).
14、3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The Interface and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 (DO-5). 3.4.1 Lead finish. Unless
15、otherwise specified, lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. All devices shall be in accordance with the requirements of MIL-
16、PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/297H 3 FIGURE 1. Physical dimensions, (all device types) DO-5. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/29
17、7H 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Units must not be damaged by torque of 30 inch-pounds applied to .250-28 UNF-28 nut assembled on thread. 4. Diameter of unthreaded portion .249 inch (6.32 mm) max and .220 inch (5.59 mm) min. 5. Comple
18、te threads to extend to within 2.5 threads of seating plane. 6. Angular orientation of this terminal is undefined. 7. Max pitch diameter of plated threads shall be basic pitch diameter .2268 inch (5.76 mm) reference FED-STD-H28. 8. A chamfer or undercut on one or both ends of the hex portion is opti
19、onal; minimum base diameter at seating plane. .600 inch (15.24 mm). 9. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions, (all device types) DO-5 - Continued. Ltr Dimensions Inches Millimeters Min Max Min Max OAH 1.000 25.40 CH .450 11.43 HT .115
20、.200 2.93 5.08 SL .422 .453 10.72 11.50 HT1.060 1.53 B .250 .375 6.35 9.52 CD .667 16.94 HF .667 .687 16.95 17.44 J .156 3.97 T .140 .175 3.56 04.44 C .080 2.03 M .030 0.77 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/297H 5 3.5 Mark
21、ing. Marking shall be in accordance with MIL-PRF-19500. 3.5.1 Polarity. The polarity shall be indicated by a graphic symbol with the arrow pointing toward the negative end for forward bias. Standard polarity devices are cathode case. Reverse polarity devices are anode case with an R following the la
22、st digit in the type number. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3 and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in ta
23、ble I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4.VERIFICATION 4.1 Classification of inspections. The inspection requirements specified here
24、in are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified herein. Tests in either polar
25、ity shall be sufficient to obtain qualification approval of both polarities. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the perfor
26、mance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-M
27、IL-PRF-19500/297H 6 4.3 Screening (JANTXV and JANTX levels only). Screening shall be in accordance with appendix E, table E-IV of MIL-PRF-19500 and as specified herein. Specified electrical measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein
28、 shall not be acceptable. Screen (see appendix E, table E-IV of MIL-PRF-19500) JANTXV and JANTX level 1a 1b Not required Required (JANTXV only) 2 Not required 3a 3b (1) 3c Required Surge (see 4.3.1) Thermal impedance (see 4.3.2) 4 Not applicable 5 Not applicable 6 Not applicable 7a 7b Optional Optio
29、nal 8 Not required 9 VF2and IR1(2) 10 Not applicable 11 Not applicable 12 See 4.3.3 13 Subgroup 2 of table I herein; VF2and IR1; VF2= .1 V(pk) from initial value; IR1= 100 percent of initial reading or 5 A dc, whichever is greater. 14a 14b Required Required 15 Not required 16 Not required (1) Surge
30、shall precede thermal response. These tests shall be performed anytime after screen 3 and before screen 9. (2) IR1measurement shall not be indicative of an open condition. 4.3.1 Surge current. Surge current, method 4066 of MIL-STD-750. IO= 0; VRM(W)= 0; IFSM= 500 A; six surges; TA= 25C; tp = 8.3 ms;
31、 one minute minimum time between surges. NOTE: A shorter time between surges will be allowed as long as it can be demonstrated that TJ 10C, as measured immediately prior to the first current pulse and immediately after the final current pulse. 4.3.2 Thermal impedance. The thermal impedance measureme
32、nts shall be performed in accordance with method 3101 of MIL-STD-750. The thermal impedance conditions and maximum thermal impedance limit shall be derived by each vendor. The chosen thermal impedance measurement and conditions for each device in the qualification lot shall be submitted in the quali
33、fication report and a thermal impedance curve shall be plotted. The chosen thermal impedance values shall be considered final after the manufacturer has had the opportunity to test five consecutive lots. Heating current (IH) rated IO; tH= 150 to 400 ms; tMD= 50 to 300 s; 50 mA IM 250 mA. 4.3.3 Power
34、 burn-in. Power burn-in conditions are as follows: Method 1038 of MIL-STD-750, condition A, t = 48 hours. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. Provided by IHSNot for ResaleNo reproduction or networking permitted withou
35、t license from IHS-,-,-MIL-PRF-19500/297H 7 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in append
36、ix E, table E-IVb (JANTX and JANTXV) of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein. * 4.4.2.1 Group B inspection, appendix E, table E-VIb (JAN, JANTX and JANTX
37、V) of MIL-PRF-19500. Subgroup Method Condition B2 1051 -55C to +175C, 25 cycles. B2 4066 Condition A, TC= 150C; VR= rated VR(AC peak) (see 1.3), If (surge) = 500 A; IO= 35 A dc; six 1/120 s surges. 1 minute minimum time between surges. tp= 8.3 ms. or Test condition C; TA= TC= TJ= 175C; VR= rated VR(
38、AC peak) (see 1.3), IO= 0; IFSM(surge)= 500 A; six surges 1/120 s, tp= 8.3 ms, one minute minimum time between surges. B3 1037 0.25 rated IO IOapplied rated IO(see 4.5.1) 2,000 cycles. * B3 1038 Condition A; 340 hrs. (Separate samples may be used.) B5 Not required 4.4.3 Group C inspection. Group C i
39、nspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VII of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III
40、 herein. 4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500. Subgroup Method Condition C2 1056 0C to +100C, 10 cycles. C2 2036 Test condition A, weight = 15 pounds, t = 15 s. C2 2036 Test condition D1, terminal torque = 3 pound-inches, t = 15 s. C2 2036 Test condition D2, stud torq
41、ue = 30 pound-inches, t = 15 s. C5 3101 RJC= 0.8C/W maximum; IM= 50 - 250 mA; IH rated IO; or tH= 25s; tMD= 50 to 300 s. 4081 C6 1037 0.25 rated IO IOapplied rated IO(see 4.5.1) 6,000 cycles. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19
42、500/297H 8 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-IX of MIL-PRF-19500, and table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. De
43、lta measurements shall be in accordance with table III herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 DC intermittent operation life. A cycle shall consist of an on period, when power is applied suddenly, not gradually,
44、to the device for the time necessary to achieve a delta case temperature of 85C +15C -5C followed by an off period, when the power is suddenly removed, for cooling. Auxiliary (forced) cooling is permitted during the off period only. 30 s tHeating 60 s, P = VFx IFor P = VFPKx Iavif using sine wave cu
45、rrent. DC full wave current (or equivalent half sine wave current) shall be used for the power required during the on period. The test power, or current, shall be at least the free air rating. Within the time interval of 50 cycles before to 500 cycles after the termination of the test, the sample un
46、its shall be removed from the specified test conditions and allowed to reach room ambient conditions. Specified end-point measurements for qualification and verification shall be completed within 96 hours after removal of sample units from the specified test conditions. Additional readings may be ta
47、ken at the discretion of the manufacturer. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/297H 9 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical inspe
48、ction 2071 Subgroup 2 Forward voltage 4011 tp 8.3 ms, duty cycle 2 percent pulse IF= 110 a(pk) VF21.4 V dc Reverse current 4016 DC method VR= rated VR(see 1.3) IR110 A dc Thermal impedance 3101 See 4.3.2 ZJXC/W Subgroup 3 High temperature operation: TC= 150C Reverse current 4016 DC method VR= rated
49、VR(pk)(see 1.3) IR21 mA dc Subgroups 4 and 5 Not applicable Subgroup 6 2/ Forward voltage 4011 IF= If(surge);tp= 800 s VF12.5 V dc Forward voltage 4011 IF= If(surge);tp= 8.3 ms VF12.3 V dc Subgroup 7 Not applicable 1/ For sampling plan, see MIL-PRF-19500. 2/ VF1shall be performed with either tp= 800 s or tp= 8.3
