1、 MIL-PRF-19500/375J 14 December 2011 SUPERSEDING MIL-PRF-19500/375H 21 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE, SILICON, TYPES 2N3821, 2N3821UB, 2N3822, 2N3822UB, 2N3823, AND 2N3823UB, JAN, JANTX, JANTXV, AND JANS This speci
2、fication is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for N-channel
3、, junction, silicon, field-effect depletion mode transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. * 1.2 Physical dimensions. See figure 1 (similar to TO-72) and figure 2 (surface mount, UB suffix). 1.3 Maximum ratings. Unless otherwise sp
4、ecified, TC= +25C. PT(1) TA= +25C VDGand VDSVGSRIGFTJand TSTG2N3821 2N3822 2N3823 2N3821 2N3822 2N3823 2N3821UB 2N3822UB 2N3823UB 2N3821UB 2N3822UB 2N3823UB mW 300 V dc 50 V dc 50 V dc 30 V dc 50 V dc 50 V dc 30 mA dc 10 C -55 to +200 (1) Derate linearly, 1.7 mW/C for TA +25C. 1.4 Primary electrical
5、 characteristics. Unless otherwise specified, TC= +25C. |yfs|1 (1) VDS= 15 V dc f = 1 kHz VGS= 0 |yfs|3 VDS= 15 V dc, VGS= 0 CissVDS= 15 V dc VGS= 0 100 kHz Crss VDS= 15 V dc VGS= 0 100 kHz f 1 MHz f = 100 MHz f = 100 MHz f = 200 MHz 2N3821 2N3822 2N3823 2N3821 2N3822 2N3823 2N3821 2N3822 2N3823 2N3
6、821UB 2N3822UB 2N3823UB 2N3821UB 2N3822UB 2N3823UB f 1 MHz 2N3821UB 2N3822UB 2N3823UB Min Max s 1,500 4,500 s 3,000 6,500 s 3,500 6,500 s 1,500 s 3,000 s 3,200 pF 6 pF 3 pF 3 pF 2 See note at end of 1.4. AMSC N/A FSC 5961INCH-POUND Comments, suggestions, or questions on this document should be addre
7、ssed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentati
8、on and process conversion measures necessary to comply with this revision shall be completed by 14 March 2012. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/375J 2 1.4 Primary electrical characteristics - Continued. IDSS(1) VDS= 15 V
9、dc VGS= 0 VGS(off)VDS= 15 V dc ID= 0.5 nA dc NFVDS= 15 V dc VGS= 0, RG= 1 M f = 10 Hz VDS= 15 V dc VGS= 0, RG= 1 M f = 1 kHz VDS= 15 V dc VGS= 0, RG= 1 M f = 105 MHz 2N3821 2N3822 2N3823 2N3821 2N3822 2N3823 2N3821 2N3822 All 2N3823 2N3821UB 2N3822UB 2N3823UB 2N3821UB 2N3822UB 2N3823UB 2N3821UB 2N38
10、22UB types 2N3823UB Min Max mA dc 0.5 2.5 mA dc 2.0 10.0 mA dc 4.0 20.0 V dc 4.0 V dc 6.0 V dc 8.0 dB 5.0 dB 2.5 dB 2.5 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not
11、include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sectio
12、ns 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of
13、 these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available onli
14、ne at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between t
15、he text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted with
16、out license from IHS-,-,-MIL-PRF-19500/375J 3 Ltr Dimensions Notes Inches Millimeters Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 L1 .050 1.27 L2 .250 6.35 LC .100 TP 2.54 TP LD .016 .021 0.41 0.53 2, 6 LL .500 .750 12.70 19.05 6 LU .016 .019 0.41 0.48 3, 6 Q
17、 .040 1.02 r .007 0.18 TL .028 .048 0.71 1.22 8 TW .036 .046 0.91 1.17 45 TP NOTES: 1. Dimensions are in inches. Millimeters are given for general information only. 2. Measured in the zone beyond .250 (6.35 mm) from the seating plane. 3. Measured in the zone .050 (1.27 mm) and .250 (6.35 mm) from th
18、e seating plane. 4. When measured in a gauging plane .054 +.001, -.000 (1.37 +.3, -.00 mm) before the seating plane of the transistor, maximum diameter leads shall be within .007 (.18 mm) of their true location relative to a maximum width tab. Smaller diameter leads shall fall within the outline of
19、the maximum diameter lead tolerance. 5. The active elements are electrically insulated from the case. 6. All 4 leads. 7. Lead 1 is the source, lead 2 is the drain, lead 3 is the gate, and lead 4 is the case. 8. Symbol TL is measured from HD maximum. 9. In accordance with ASME Y14.5M, diameters are e
20、quivalent to x symbology. FIGURE 1. Physical dimensions (similar to TO-72). TO-72 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/375J 4 Dimensions Symbol Inches Millimeters Note Min Max Min Max BH .046 .056 1.17 1.42 BL .115 .128 2.92
21、3.25 BW .085 .108 2.16 2.74 CL .128 3.25 CW .108 2.74 LL1 .022 .038 0.56 0.96 LL2 .017 .035 0.43 0.89 LS1 .036 .040 0.91 1.02 LS2 .071 .079 1.81 2.01 LW .016 .024 0.41 0.61 r .008 .203 r1 .012 .305 r2 .022 .559 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only
22、. 3. Hatched areas on package denote metallized areas. 4. Lid material: Kovar. 5. Pad 1 = Drain, Pad 2 = Source, Pad 3 = Gate, Pad 4 = Shielding connected to the lid. * FIGURE 2. Physical dimensions, surface mount (2N3821UB, 2N3822UB, AND 2N3823UB). UB Provided by IHSNot for ResaleNo reproduction or
23、 networking permitted without license from IHS-,-,-MIL-PRF-19500/375J 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured b
24、y a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and
25、 as follows. RISOInsulation resistance, gate lead to case. S Unit of conductance or admittance (formerly mho). V1. rms value of the specified reference voltage in the specified circuit. V2. rms value of the measured voltage between the specified points in the specified circuit. |yos| Magnitude of sm
26、all-signal common-source short-circuit output admittance. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (TO-72) and figure 2 (surface mount, UB) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accorda
27、nce with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragr
28、aph 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on the UB package shall consist of an abbreviated part number, the
29、 date code, and the manufacturers symbol or logo. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The “2N“ prefix and the “UB“ suffix can also be omitted. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in qu
30、ality and shall be free from other defects that will affect life, serviceability, or appearance. 4 VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance ins
31、pection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was aw
32、arded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by I
33、HSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/375J 6 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accor
34、dance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels 11 IGSSR1, IDSS, and |yfs|1 IGSSR1, IDSS, and |yfs|1 12 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I her
35、ein; IDSS= 10 percent of initial value; |yfs|1 = 20 percent initial value. Subgroup 2 of table I herein; IDSS= 10 percent of initial value; |yfs|1 = 20 percent of initial value. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: 2N3821, 2N3821UB, 2N3822, and 2N3822UB: VGS= 40 V
36、 dc; VDS= 0; TA= +150C. 2N3823, 2N3823UB: VGS= 24 V dc; VDS= 0; TA= +150C. NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group
37、 A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIA (JANS) and E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2
38、.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 2N3821, 2N3821UB, 2N3
39、822, and 2N3822UB: VDS= 30 V dc, VGS= 0; 2N3823, 2N3823UB: VDS= 15 V dc, VGS= 0; at TA= +30C 5C. ton= toff= 3 minutes minimum for 2,000 cycles. No heat sink or forced-air cooling on the devices shall be permitted. B5 1027 VDS= 0; 2N3821, 2N3821UB, 2N3822, and 2N3822UB: VGS= 40 V dc; 2N3823, 2N3823UB
40、: VGS= 24 V dc; at TA= +225C for 168 hours or TA= +200C for 260 hours. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/375J 7 4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B
41、3 1027 2N3821, 2N3821UB, 2N3822, 2N3822UB, and 2N3822: VGS= 40 V dc, VDS= 0; 2N3823, 2N3823UB: VDS= 0, VGS= 24; at TA= +150C 5C. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as fo
42、llows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. Subgroup Method Condition C2 2036 Test condition E (not applicable to “UB“ suffix version). C6 1026 2N3821, 2N3821UB, 2N3822, 2N3822UB,
43、and 2N3822: VGS= 40 V dc, VDS= 0; 2N3823, 2N3823UB: VDS= 0, VGS= 24; at TA= +150C 5C. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measu
44、rements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse
45、measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Disposition of case lead during electrical measurements. All electrical measurements (except for case insulation test) operating life test shall be performed with the case lead connected to the source. 4.5.2.1 Case insulation resis
46、tance test. Case insulation resistance test shall be measured between the case and gate lead. 4.5.3 Small-signal common-source short-circuit input (or output) conductance. These tests shall be conducted with a General Radio transfer function and admittance bridge model 1607A (or suitable equivalent)
47、 in accordance with the portion of its accompanying handbook which is applicable to this measurement. A Hewlett-Packard generator model 608D and a Nems-Clarke receiver model 1502A (or suitable equivalents) shall be used with the transfer function and admittance bridge. 4.5.4 10 Hz and 1 kHz spot noi
48、se figure tests. These tests shall be conducted with a model 2173C Quan Tech Laboratories test set, or equivalent. Conditions shall be as specified in table I. 4.5.5 105 MHz spot noise figure test. This test shall be conducted with the equipment and circuit shown on figures 3 and 4, or suitable equi
49、valent. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/375J 8 TABLE I. Group A inspection . Inspection 1/ MIL-STD-750 Limit Unit Method Conditions Symbol Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Gate-source breakdown voltage 3401 Bias condition C;
