1、 MIL-PRF-19500/384G 8 August 2013 SUPERSEDING MIL-PRF-19500/384F 25 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON HIGH-POWER, TYPES 2N3584, 2N3585, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Departm
2、ent of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided for
3、this device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-66). 1.3 Maximum ratings. TC= +25C, unless otherwise specified. Type PTTA= +25C PTTC= +25C (1) RJCVCBOVCEOVEBOVCERIBICTJand TSTG2N3584 2N3585 W 2.5 2.5 W 35 35 C/W 5.0 5.0 V dc 375 500 V dc 250 300 V dc 6.0 6.0
4、 V dc 300 400 A dc 1.0 1.0 A dc 2.0 2.0 C -65 to +200 -65 to +200 (1) Derate linearly, 200 mW/C for TC +25C. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed
5、 to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 8
6、 November 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/384G 2 1.4 Primary electrical characteristics. hFE(1) |hfe| CoboVBE(SAT)VCE(SAT)Switching Limits (1) (1) tontoffIC= 1 A dc VCE= 10 V dc IC= 100 mA dc VCE= 10 V dc f = 5 MHz
7、 IC= 200 mA dc VCE= 10 V dc 100 KH f 1 MHz VCB= 10 V dc IE= 0 IC= 1.0 A dc IB= 0.1 A dc IC= 1 A dc IB=125 mA dc (See table I and figure 2 herein) Min Max 25 100 40 3.0 15 pF 120 V dc 1.4 V dc 0.75 s 3.0 s 7.0 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this s
8、ection are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users
9、are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part o
10、f this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. * DEPARTMENT OF DEFENSE STANDARDS MIL-STD-
11、750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless ot
12、herwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtain
13、ed. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/384G 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Body contour is optional within zone defined by CD. 4. These dimensions should be m
14、easured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement will be made at seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. The collector shall be electrically connected to the case. 9. LD applies between L1and LL. Lead di
15、ameter shall not exceed twice LD within L1. 10. Pin 1 is the emitter, pin 2 is the base. The collector shall be electrically connected to the case. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (TO-66). Dimensions Symbol Inches Millimeters
16、 Notes Min Max Min Max CD .620 15.75 3 CH .250 .340 6.35 8.64 HT .050 .075 1.27 1.91 3 HR .350 8.89 HR1.115 .145 2.92 3.68 6 LD .028 .034 0.71 0.86 5, 9 LL .360 .500 9.14 12.70 5 L1.050 1.27 5, 9 MHD .142 .152 3.61 3.86 7 MHS .958 .962 24.33 24.43 PS .190 .210 4.83 5.33 4 PS1.093 .107 2.36 2.72 4 S
17、.570 .590 14.48 14.99 4 TO-66 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/384G 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices
18、 furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, sy
19、mbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and figures 1 (TO-66) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-1
20、9500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Transistor construction. These devices shall be constructed in a manner and using materials which enable the transistor to meet the applicable requirements of M
21、IL-PRF-19500 and this document. 3.5 Marking. Devices shall be marked as specified in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirem
22、ents. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION
23、 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accor
24、dance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in ta
25、ble III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/384G 5 4.3 Screening (JANTX and JANT
26、XV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500,and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-
27、PRF-19500) JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.2) 9 ICEX111 hFE2, ICEX1; ICEX1= 100 percent of initial value or 0.1 mA dc, whichever is greater 12 See 4.3.1 13 Subgroup 2 of table I herein; ICEX1= 100 percent of initial value or 0.1 mA dc,. hFE2= 20 percent of initial value. (1
28、) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in. Power burn-in conditions are as follows: PT= 2.5 W, VCB= 150 V dc, TA= +25C, minimum NOTE: No heat sink or forced air cooling on the devices shall be pe
29、rmitted. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgr
30、oup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accorda
31、nce with the conditions specified for subgroup testing in appendix E, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. Su
32、bgroup Method Conditions B3 1037 TJ= +100C, 2,000 cycles, test condition D. The heating cycle shall be 1 minute minimum. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/384G 6 4.4.3 Group C inspection. Group C inspection shall be conduc
33、ted in accordance with the conditions specified for subgroup testing in appendix E, table E-VII of MIL-PRF-19500 and as follows herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Conditions C2 2036 Test condition A, weight = 10 pounds
34、, time = 15 s. C5 3131 See 4.3.2, RJC= 5C/W. C6 1037 TJ= +100C, 6,000 cycles, test condition D. The heating cycle shall be 1 minute minimum. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-IX of M
35、IL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein; they apply to subgroups E1 and E2. 4.5 Methods of inspection. Methods of inspection and test shall be as
36、specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 SBICtest. Set VCC= 100 V dc without pulse applied. Adjust generator to apply a single pulse of 1 secondduration obtain IC = 350 mA d
37、c. The 1 second pulse width shall not be exceeded in adjustment and not more than one pulse shall be applied in any 20 second interval. (See figure 2.) 4.5.3 SBICEXtest. Set switch (SW) to required position for test. Adjust V3so that the current through R3is 2.0 A dc. Device fails test if second bre
38、akdown occurs as indicated by collapse of oscilloscope display. (See figure 3.) 4.5.4 SBICER test. Set switch (SW) to required position for test. Adjust V3so that the current through R3is 1.4 A dc. Device fails test if second breakdown occurs as indicated by collapse of oscilloscope display. (See fi
39、gure 3.) 4.5.5 V(BR)CEOand V(BR)CERtests. The breakdown voltages V(BR)CEOand V(BR)CERshall not be measured on a curve tracer. V(BR)CEOand V(BR)CERshould be measured by means of the test circuit shown on figure 3. Set switch (SW) to required position for test. Adjust V3so that the current through R3i
40、s 200 mA. Device fails test if collector to emitter voltage is less than breakdown voltage limit at 200 mA. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/384G 7 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit
41、 Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal Impedance 2/ 3131 See 4.3.2 ZJXC/W Breakdown voltage, collector to emitter 3011 Pulsed (see 4.5.1), IC= 10 mA dc; bias condition D, (see figure 3 and 4.5.5) V(BR)CEO2N3584 250 V dc 2N3585 300 V dc Breakdo
42、wn voltage, collector to base 3001 Bias condition D, IC= 15 mA dc, pulsed (see 4.5.1), (see figure 3 and 4.5.5) V(BR)CER2N3584 375 V dc 2N3585 500 V dc Emitter to base cutoff current 3061 Bias condition D, VEB= 6.0 V dc IEBO0.5 mA dc Collector to emitter cutoff current 3041 Bias condition A, VBE= -1
43、.5 V dc ICEX12N3584 VCE= 300 V dc 1.0 mA dc 2N3585 VCE= 400 V dc 1.0 mA dc Collector to emitter cutoff current 3041 Bias condition D, VCE= 150 V dc ICEO5.0 mA dc Base emitter voltage (saturated) 3066 Test condition A, pulsed (see 4.5.1), IC= 1 A dc, IB= 0.1 A dc VBE(sat)1.4 V dc Collector to emitter
44、 voltage (saturated) 3071 Pulsed (see 4.5.1) IC = 1 A dc, IB= 0.125 A dc VCE(sat)0.75 V dc Forward-current transit ratio 3076 VCE= 10 V dc, IC= 1 A dc, pulsed (see 4.5.1) hFE125 100 Forward-current transit ratio 3076 VCE= 10 V dc, IC= 100 mA dc, pulsed (see 4.5.1) hFE240 See footnotes at end of tabl
45、e. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/384G 8 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 3 High temperature operation: TA= +150C Collector to emit
46、ter cutoff current 3041 Bias condition A, VBE= -1.5 V dc ICEX22N3584 VCE= 300 V dc 2.0 mA dc 2N3585 VCE= 400 V dc 2.0 mA dc Subgroup 4 Second breakdown, collector current, base forward biased 3051 VCE= 100 V dc (see figure 2 and 4.5.2) SBIC350 mA dc Pulse response 3251 Test condition A, except subst
47、itute the NPN symbol for the PNP. Turn-on time VCC= 30 V dc, IC= 1 A dc, IB= 100 mA dc, RC= 29 ton3.0 s Turn-off time VCC= 30 V dc, IC= 1 A dc, IB1= -IB2, = 100 mA dc, RC= 29 toff7.0 s Magnitude of common emitter small-signal short-circuit forward-current transfer ratio 3306 VCE= 10 V dc, IC= 200 mA
48、 dc, f = 5 MHz |hfe| 3.0 15 Open circuit (output capacitance) 3236 VCB= 10 V dc, IE= 0, 100 kHz f 1 MHz Cobo120 pF Small-signal short-circuit forward-current transfer ratio 3206 VCE= 10 V dc, IC= 1 A dc, f = 1 kHz hfe25 200 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction
49、or networking permitted without license from IHS-,-,-MIL-PRF-19500/384G 9 TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 5 Safe operating area (continuous dc) 3051 TC= +25C, power application time = 1 second, 1 cycle Test 1 VCE= 17.5 V dc
