1、 MIL-PRF-19500/413F 15 October 2008 SUPERSEDING MIL-PRF-19500/413E 27 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPES 2N3771 AND 2N3772, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the De
2、partment of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistors for use in high-speed power-switching appli
3、cations. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-3). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. PTType TA= +25C (1) TC= +25C (2) RJCRJAVCBO VCEO VEBO IB IC TSTG and TJ2N3771 2N3772 W
4、6 6 W 150 150 C/W 1.17 1.17 C/W 29.2 29.2 V dc 50 100 V dc 40 60 V dc 7 7 V dc 7.5 5.0 A dc 30 20 C -65 to +200 -65 to +200(1) Derate linearly 34.2 mW/C for TA +25C. (2) Derate linearly 857 mW/C for TC +25C. 1.4 Primary electrical characteristics. hFE2at VCE= 4 V dc VCE(SAT)1(1) Type IC= 15 A dc IC=
5、 10 A dc IC= 15 A dc IB= 1.5 A dc IC= 10 A dc IB= 1.0 A dc 2N3771 2N3772 Min Max 15 60 Min Max 15 60 V dc 1.5 Max V dc 1.2 Max (1) Pulsed (see 4.5.1). AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-
6、VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. The documentation and process conversion measure
7、s necessary to comply with this revision shall be completed by 15 January 2009. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/413F 2 1.4 Primary electrical characteristics - continued. |hfe| CoboSwitching (see figure 2) Limits VCE= 4
8、V dc IC= 1 A dc f = 100 kHz VCB= 10 V dc IE= 0 100 kHz f 1 MHz ton, toff2N3771 ton, toff2N3772 Min Max 6 30 1,200 pF s s 10 12 s s 8 10 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include
9、documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4,
10、 or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these d
11、ocuments are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at ht
12、tp:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text
13、of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without lice
14、nse from IHS-,-,-MIL-PRF-19500/413F 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Terminal 1 is base; terminal 2 is emitter; case is collector. 4. These dimensions should be measured at points .050 - .055 inch (1.27 mm - 1.40 mm) below seating plane.
15、 When gauge is not used, measurement will be made at seating plane. * 5. The seating place of the header shall be flat within .004 inch (0.102 mm) inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .004 inch (0.102 mm) concave to .006 inch (0.15 mm) convex over
16、all. 6. Collector shall be electrically connected to the case. 7. LD applies between L1and LL. Lead diameter shall not exceed twice LD within L1. 8. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions, TO-3. Dimension Inches Millimeters Ltr Min Ma
17、x Min Max Notes CH .270 .380 6.86 9.65 CD .875 22.22 HR .495 .525 12.57 13.33 HR1.131 .188 3.33 4.78 HT .060 .135 1.52 3.43 LD .038 .053 0.97 1.35 7 LL .312 .500 7.92 12.70 7 L1.050 1.27 7 MHD .151 .165 3.84 4.19 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 4 PS1.205 .225 5.21 5.72 4 S1 .655
18、 .675 16.64 17.15 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/413F 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished u
19、nder this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definit
20、ions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Whe
21、re a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, the country of origin marking may be omitted from the body of the transistor. 3.6 Electrical performa
22、nce characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed
23、 in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b
24、. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualifi
25、cation only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision
26、 to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/413F 5 * 4.3 Screening. Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in a
27、ccordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurement Screen (see table E-IV of MIL-PRF-19500) JANTX and JANTXV levels (1) 3c Thermal impedance (see 4.3.2). 9 ICEX1. 11 ICEX1and hFE2; ICEX1= 100 percent of initial value or 2 A dc, whiche
28、ver is greater. 12 Burn-in (see 4.3.1). 13 Subgroup 2 of table I herein. ICEX1= 100 percent of initial value or 2 A dc, whichever is greater; hFE2= 25 percent of initial reading. (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requir
29、ements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA +35C; VCB= 25 V dc 5 V dc; TJ= +187.5C 12.5C. NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance w
30、ith method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19
31、500 and as specified herein. 4.4.1. Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall
32、 be conducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirement shall be in accordance with table II
33、 herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/413F 6 * 4.4.2.1 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 For solder die attach: Intermittent operation life; 2
34、,000 cycles; VCB 10 V dc; TA +35C B3 1027 For eutectic die attach: TA +35C, VCB 10 V dc; adjust PTto achieve TJ= +175C minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as fol
35、lows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with table II herein. Subgroup Method Condition C2 2036 Test condition A, weight = 10 lbs., t = 15 s. C5 3131 See 4.3.2, RJC= 1.17C/W. C6 1037 For solder die a
36、ttach: Intermittent operation life; 6,000 cycles; VCB 10 V dc; TA +35C C6 1027 For eutectic die attach: TA +35C, VCB 10 V dc; adjust PTto achieve TJ= +175C minimum. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in app
37、endix E, table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with table II herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appr
38、opriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/413F 7 * TABLE I. Group A inspection. MIL-STD-7
39、50 Limits Unit Inspection 1/ Method Conditions Symbol Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.2 ZJXC/W Breakdown voltage, collector to base 2N3771 2N3772 3011 Bias condition D, pulsed (see 4.5.1), IC= 200 mA dc V(BR)CEO40 60 V dc V dc Br
40、eakdown voltage collector to emitter 2N3771 2N3772 3011 Bias condition B, IC= 200 mA dc, RBE= 100, pulsed (see 4.5.1) V(BR)CER45 70 V dc V dc Breakdown voltage, collector to emitter 2N3771 2N3772 3011 Bias condition A, IC= 200 mA dc, VBE= -1.5 V dc, pulsed (see 4.5.1) V(BR)CEX50 90 V dc V dc Collect
41、or-emitter cutoff current 2N3771 2N3772 3041 Bias condition D VCE= 30 V dc VCE= 50 V dc ICEO5 5 mA dc mA dc Emitter to base cutoff current 3061 Bias condition D, VBE= 7.0 V dc IEBO2.0 mA dc Collector-emitter cutoff current 2N3771 2N3772 3041 Bias condition A, VBE= 1.5 V dc VCE= 50 V dc VCE= 100 V dc
42、 ICEX120 20 A dc A dc Base emitter voltage (nonsaturated) 2N3771 2N3772 3066 Test condition B, VCE= 4 V dc, pulsed (see 4.5.1), IC= 15 A dc IC= 10 A dc VBE2.3 2.0 V dc V dc Collector to emitter voltage (saturated) 2N3771 2N3772 3071 Pulsed (see 4.5.1) IC= 15 A dc, IB= 1.5 A dc IC= 10 A dc, IB= 1.0 A
43、 dc VCE(sat)11.5 1.2 V dc V dc See footnotes at end of table. * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/413F 8 * TABLE I. Group A inspection - Continued. MIL-STD-750 Limits Inspection 1/ Method Conditions Symbol Min Max Unit S
44、ubgroup 2 - Continued Collector to emitter voltage (saturated) 2N3771 2N3772 3071 Pulsed (see 4.5.1) IC= 30 A dc, IB= 6 A dc IC= 20 A dc, IB= 4 A dc VCE(sat)24 4 V dc V dc Forward-current transfer ratio 3076 Pulsed (see 4.5.1), VCE= 4 V dc, IC= 1.0 A dc hFE140 Forward current transfer ratio 2N3771 2
45、N3772 3076 Pulsed (see 4.5.1), VCE= 4 V dc IC= 15 A dc IC= 10 A dc hFE215 15 60 60 Subgroup 3 High temperature operation: Collector to emitter cutoff current 2N3771 2N3772 3041 TA= +150C Bias condition A, VBE= -1.5 V dc VCE= 50 V dc VCE= 100 V dc ICEX21.5 1.5 mA dc mA dc Low temperature operation: F
46、orward-current transfer ratio 2N3771 2N3772 3076 TA= -55C Pulsed (see 4.5.1), VCE= 4 V dc IC= 15 A dc IC= 10 A dc hFE310 10 Subgroup 4 Pulse response 3251 Test condition A except test circuit and pulse requirements in accordance with figure 2 herein Turn on time 2N3771 2N3772 VCC= 30 V dc IC= 15 A d
47、c, IB1= 1.5 A dc IC= 10 A dc, IB1= 1 A dc ton10 8 s s Turn off time 2N3771 2N3772 VCC= 30 V dc IC= 15 A dc, IB1= 1.5 A dc IB2= -1.5 A dc IC= 10 A dc, IB1= 1 A dc IB2= -1 A dc toff12 10 s s See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without lic
48、ense from IHS-,-,-MIL-PRF-19500/413F 9 * TABLE I. Group A inspection - Continued. MIL-STD-750 Limits Inspection 1/ Method Conditions SymbolMin Max Unit Subgroup 4 - Continued Magnitude of common emitter small-signal short-circuit forward- current transfer ratio 3306 VCE= 4 V dc, IC= 1.0 A dc f = 100 kHz |hfe| 6 30 Small-signal short-circuit forward-current transfer ratio 3206 VCE= 10 V dc, IC= 1.0 A dc f = 1 kHz hfe40 Output capacitance (open circuit) 3236 VCB= 10 V dc, IE= 0, 100 kHz f 1 MHz Cobo1,200 pF Subgroup 5 Safe operating area (dc operation) 3051 TC= +25C
