1、 MIL-PRF-19500/441K 30 March 2010 SUPERSEDING MIL-PRF-19500/441J 14 November 2006 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER, TYPES 2N3740, 2N3740U4, 2N3741, AND 2N3741U4, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, J
2、ANHCC, JANKCC, JANKCCM, JANKCCD, JANKCCP, JANKCCL, JANKCCR, JANKCCF, JANKCCG, and JANKCCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL
3、-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsu
4、lated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have p
5、assed RHA requirements. * 1.2 Physical dimensions. See figure 1, TO-66, figure 2 (U4, surface mount) for encapsulated devices, and figure 3 for unencapsulated devices (JANHC and JANKC). * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Types PT(1) RJC (2) RJC (2) VCBOVCEOVEBOIBICTSTGand T
6、JTC= +25C TA= +25C TC= +100C T0-66 only U4 only W W W C/W C/W V dc V dc V dc A dc A dc C 2N3740, 2N3740U4 25 3 14 7 6 60 60 7 2 4 -65 to +200 2N3741, 2N3741U4 25 3 14 7 6 80 80 7 2 4 -65 to +200 (1) See figures 4 and 5 for temperature-power derating curves. (2) See figures 6 and 7, transient thermal
7、 impedance graphs. AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may
8、want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 June 2010. Provided by IHSNot for ResaleNo reproduction or networ
9、king permitted without license from IHS-,-,-MIL-PRF-19500/441K 2 1.4 Primary electrical characteristics at TC= +25C. Limits hFE2(1) VCE= 1 V dc hFE4(1) VCE= 1 V dc |hfe| VCE= 10 V dc VCE(sat)2(1) IC= 1.0 A dc CoboVCB= 10 V dc IE= 0 Pulse response IC= 250 mA dc IC= 1 A dc IC= 100 mA dc f = 5 MHz IB=
10、125 mA dc100 kHz f 1 MHz ton toff Min Max 30 120 10 1 12 V dc 0.6 pF 100 ns 400 s 1 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sec
11、tions of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification,
12、 whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
13、the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/qui
14、cksearch/ or https:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the r
15、eferences cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-1
16、9500/441K 3 FIGURE 1. Physical dimensions, TO-66 (2N3740, 2N3741). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/441K 4 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions sho
17、uld be measured at points .050 to .055 inch (1.27 to 1.40 mm) below seating plane. When gauge is not used, measurement will be made at seating plane. 4. Both terminals. 5. At both ends. 6. Two holes. 7. The collector shall be electrically connected to the case. 8. LD applies between L1 and LL. Lead
18、diameter shall not exceed twice LD within L1. 9. In accordance with ASME Y14.5M, diameters are equivalent to symbology. 10. Lead 1 is the emitter, lead 2 is the base, collector is the case. FIGURE 1. Physical dimensions, TO-66 (2N3740, 2N3741) - Continued. Dimensions Dimensions Symbol Inches Millime
19、ter Notes Symbol Inches Millimeters Notes Min Max Min Max Min Max Min Max CD .620 15.75 9 LL .360 .500 9.14 12.70 4, 8 CH .250 .340 6.35 8.64 L1.050 1.27 4, 8 HT .050 .075 1.27 1.91 MHD .142 .152 3.61 3.86 6, 9 HR .350 8.89 MHS .958 .962 24.33 24.43 HR1.115 .145 2.92 3.68 5 PS .190 .210 4.83 5.33 3
20、LD .028 .034 0.71 0.86 4, 8, 9 PS1.093 .107 2.36 2.72 3 S .570 .590 14.48 14.99 3 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/441K 5 Symbol Dimensions Inches Millimeters Min Max Min Max BL .215 .225 5.46 5.72 BW .145 .155 3.68 3.94
21、CH 0.049 0.075 1.24 1.91 LH .020 0.51 LW1 .135 .145 3.43 3.68 LW2 .047 .057 1.19 1.45 LL1 .085 .125 2.16 3.17 LL2 .045 .075 1.14 1.9 LS1 0.07 .095 1.78 2.41 LS2 0.035 .048 0.890 1.21 Q1 0.03 .070 0.76 1.78 Q2 0.02 0.035 0.51 0.89 TERM 1 Collector TERM 2 Base TERM 3 Emitter NOTES: 1. Dimensions are i
22、n inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to symbology. * FIGURE 2. Physical dimensions and configuration (SMD.22) (2N3740U4, 2N3741U4) - Continued. BLBW CHLH(3X)LS2Q2 LW2(2X)Q1 (2X)LW1LL1LL2 (2X)U412 3Ls1Provided by
23、IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/441K 6 C - version NOTES: 1. Chip size: .070 x .070 inch .002 inch (1.78 x 1.78 mm .0508 mm). 2. Chip thickness: .014 .0015 inch (.356 .0381 mm) nominal. 3. Top metal: Aluminum 54,000 minimum, 66,000
24、nominal. 4. Back metal: Al/Ti/Ni/Au 10,000 minimum, 12,000 nominal. 5. Backside: Collector. 6. Bonding pad: B = .028 x .016 inch (.711 x .406 mm), E = .028 x .016 inch (.711 x .406 mm). 7. Previous A and B versions of JANC die are obsolete. * FIGURE 3. Physical dimensions, JANHCC and JANKCC die. Pro
25、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/441K 7 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specificati
26、on shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herei
27、n shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1 (TO-66), 2 (surface mount, U4), and 3 (die). 3.4.1 Lead finish. Unless otherwise specified, lead finish shall be solderable in
28、 accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified i
29、n 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. * 3.7 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels shall be as defined in MIL-PRF-
30、19500. * 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P, L, R, F, G, or H shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices shall be pro
31、cessed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4
32、.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC devices. JANHC and JANKC devices are qualified in accordance with
33、 MIL-PRF-19500, appendix G. * 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table IV tests, the tests specified in
34、 table IV herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/441K 8 4.3 Screening (JANS, JANTXV
35、, and JANTX levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measureme
36、nt of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750, see 4.3.3. Thermal impedance, method 3131 of MIL-STD-750, see 4.3.3. 9 ICEX1and hFE2Not applicable. 10 48 hours minimum. 48 hours minimum. 11 ICEX1and hFE2; ICEX1= 100 percent of initial val
37、ue or 50 nA dc, whichever is greater, hFE2= 25 percent of initial value. ICEX1and hFE212 See 4.3.1. See 4.3.1. 13 Subgroups 2 and 3 of table I herein; ICEX1= 100 percent of initial value or 50 nA dc; whichever is greater; hFE2= 25 percent of initial value. Subgroup 2 of table I herein; ICEX1= 100 pe
38、rcent of initial value or 50 nA dc, whichever is greater; hFE2= 25 percent of initial value. (1) Thermal impedance shall be performed anytime after temperature cycling, screen 3a and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are
39、as follows: VCB= 10 - 30 V dc. Power shall be applied to the device to achieve a junction temperature, TJ= +175 C minimum and a minimum PD= 75 percent of PTmaximum rated as defined in 1.3. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with appendix G of M
40、IL-PRF-19500. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. * 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, I
41、H, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table IV, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Provided by IHSNot for ResaleNo reproduction or networking p
42、ermitted without license from IHS-,-,-MIL-PRF-19500/441K 9 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500, and table I herein. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspec
43、tion. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points) requirements for JANS shall be in accordance with table I, subgroup 2 herein. Delta requirement
44、s shall be in accordance with table II herein. See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 and table II he
45、rein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Conditions B4 1037 VCB= 10 V dc, 2,000 cycles, tON= tOFF= 3 minutes, PD(ON)= PDmax rated in accordance with 1.3; PD(OFF)= 0. B5 1027 (NOTE: If a failure occurs, resubmission shall be at the test conditions of the
46、original sample.) VCB= 10 V dc, PD 100 percent of maximum rated PT(see 1.3). Option 1: 96 hours minimum sample size in accordance with table VIa of MIL-PRF-19500, adjust TAor PDto achieve TJ= +275C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TAor PDto achieve TJ= +225C mini
47、mum. 4.4.2.2 Group B inspection, (JAN, JANTX and JANTXV) herein. Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “
48、assembly lot” option is exercised, the failed assembly lot shall be scrapped. Step Method Condition 1 1037 6,000 cycles, tON= tOFF= 3 minutes, PD(ON)= PDmax rated per 1.3; PD(OFF)= 0. n = 45, c = 0. 2 1048 Blocking life: TA= +150C, VCB= 80 percent of rated voltage, 48 hours min. n = 45, c = 0. 3 103
49、2 High-temperature life (non-operating), t = 340 hours, TA= +200C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV, samples shall be selected randomly from a minimum of three wafers (or from each wafe
