1、 MIL-PRF-19500/501E 4 September 2013 SUPERSEDING MIL-PRF-19500/501D 21 April 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER, TYPES 2N6051 AND 2N6052, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies o
2、f the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, Darlington, silicon, power transistors. Three levels of product as
3、surance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-3). * 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type PT(1) TC= +25C PT(1) TC= +100C RJCVCBOVCEOVEBOICIBTJand TSTGW W C/W V dc V dc V dc A dc A dc C 2N6051 150 75 1.0 80
4、 80 5 12 0.2 -55 to +175 2N6052 150 75 1.0 100 100 5 12 0.2 -55 to +175 (1) Derate linearly at 1.00 W/C above TC +25C (see figure 2). AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus,
5、OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this revisio
6、n shall be completed by 4 December 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/501E 2 1.4 Primary electrical characteristics. Unless otherwise specified, TC= +25C. hFE2(1) hFE3(1) hfehfe CoboPulse response Limit VCE= 3 V dc IC
7、= 6 A dc VCE= 3 V dc IC= 12 A dc VCE= 3 V dc IC= 5 A dc f = 1 kHz VCE= 3 V dc IC= 5 A dc f = 1 MHz 100 kHz f 1 MHz VCB= 10 V dc IE= 0 tontoffpF s s Min 1,000 150 10 Max 18,000 1,000 250 300 2 10 Limit VBE(sat) IC= 12 A dc IB= 120 mA dc (1) VCE(sat)1 IC= 12 A dc IB= 120 mA dc (1) VCE(sat)2 IC= 6 A dc
8、 IB= 24 mA dc (1) V dc V dc V dc Min Max 4.0 3.0 2.0 (1) Pulsed see 4.5.1. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or re
9、commended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed.
10、2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEP
11、ARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from
12、the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document t
13、akes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/501E 3 3. REQUIREMENTS 3.1 General. The indivi
14、dual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers li
15、st (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-195
16、00 and on figure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-195
17、00. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Sem
18、iconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a.
19、Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be perfo
20、rmed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the f
21、irst inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/501E 4 FIGURE 1. Physical dimensions (TO-3) and schematic circuit. Provided by IHSNot for ResaleNo reproduction or networkin
22、g permitted without license from IHS-,-,-MIL-PRF-19500/501E 5 Dimensions Ltr Inches Millimeters Notes Min Max Min Max CD .875 22.23 3 CH .250 .328 6.35 8.33 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 6 HT .060 .135 1.52 3.43 LD .038 .043 0.97 1.09 4, 5, 9 LL .312 .500 7.92 12.70 4, 5, 9 L1.050
23、1.27 5, 9 MHD .151 .161 3.84 4.09 7 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 PS1.205 .225 5.21 5.72 5 S1 .655 .675 16.64 17.15 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Body contour is optional within zone defined by CD. 4. These dimens
24、ions shall be measured at points .050 inch (1.27 mm) to .055 inch (1.40 mm) below seating plane. When gauge is not used, measurement shall be made at seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. The collector shall be electrically connected to the case. 9. LD applies between L
25、1and LL. Lead diameter shall not exceed twice LD within L1. 10. The seating plane of the header shall be flat within .001 inch (0.03 mm), concave to .004 inch (0.10 mm), convex inside a .930 inch (23.62 mm) diameter circle on the center of the header, and flat within .001 inch (0.03 mm) concave to .
26、006 inch (0.15 mm), convex overall. 11. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (TO-3) and schematic circuit - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/501
27、E 6 4.3 Screening (JANTX and JANTXV levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see t
28、able E-IV Measurement of MIL-PRF-19500) JANTX and JANTXV levels only (1) 3c Thermal impedance (see 4.3.2). 9 ICEX111 ICEX1, hFE2. Subgroup 2 of table I herein; ICEX1= 100 percent of initial value or 2 A dc, whichever is greater. 12 See 4.3.1. 13 Subgroup 2 of table I herein; ICEX1= 100 percent of in
29、itial value or 2 A dc, whichever is greater; hFE2= 40 percent of initial value. (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ= +162.5C 12.5C;
30、 VCE 10 V dc, TA +100C. NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and V
31、Hwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. * 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, tabl
32、e E-V of MIL-PRF-19500, and table I herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VIB (JAN,
33、 JANTX and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein and delta measurements shall be in accordance with table II herein. 4.4.2.1 Group B inspection, appendix E, table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500. Subgroup
34、Method Conditions B3 1037 VCB 10 V dc; TJ= between cycles +100C. ton= toff= 3 minutes for 2,000 cycles. No heat sink or forced-air cooling on the devices shall be permitted. B5 Not applicable. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-1
35、9500/501E 7 * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein and delta measuremen
36、ts shall be in accordance with table II herein. 4.4.3.1. Group C inspection, appendix E, table E-VII of MIL-PRF-19500. Subgroup Method Conditions C2 2036 Test condition A, weight = 10 pounds, t = 15 s. C5 3131 See 4.3.2, RJC= 1C/W. C6 1037 VCB 10 V dc, TJbetween cycles +100C, ton= toff= 3 minutes fo
37、r 6,000 cycles. No heat sink or forced-air cooling on the devices shall be permitted. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-
38、points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein and applies to subgroup E1 and E2. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements.
39、Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/501E 8 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limit Unit Method Conditions Min
40、Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3131 See 4.3.2 ZJXC/W Breakdown voltage collector to emitter 3011 Bias condition D; IC= 100 mA dc, pulsed (see 4.5.1) V(BR)CEO2N6051 80 V dc 2N6052 100 V dc Collector to emitter cutoff current 3041 Bias condition A
41、; VBE= 1.5 V dc ICEX12N6051 VCE= 80 V dc .01 mA dc 2N6052 VCE= 100 V dc .01 mA dc Collector to emitter cutoff current 3041 Bias condition D ICEO1 mA dc 2N6051 VCE= 40 V dc 2N6052 VCE= 50 V dc Emitter to base cutoff current 3061 Bias condition D; VBE= 5 V dc, IEBO2 mA dc Base to emitter non-saturated
42、 3066 Test condition B; IC= 6 A dc, VCE= 3 V dc, pulsed (see 4.5.1) VBE2.8 V dc Base to emitter saturated 3066 Test condition A; IC= 12 A dc, IB= 120 mA dc, pulsed (see 4.5.1) VBE(sat)4.0 V dc Collector to emitter saturated voltage 3071 IC= 12 A dc; IB= 120 mA dc pulsed (see 4.5.1) VCE(sat)1 3.0 V d
43、c Collector to emitter saturated voltage 3071 IC= 6 A dc; IB= 24 mA dc, pulsed (see 4.5.1) VCE(sat)22.0 V dc Forward current transfer ratio 3076 VCE= 3 V dc; IC= 1 A dc, pulsed (see 4.5.1) hFE11,000 Forward current transfer ratio 3076 VCE= 3 V dc; IC= 6 A dc, pulsed (see 4.5.1) hFE21,000 18,000 Forw
44、ard current transfer ratio 3076 VCE= 3 V dc; IC= 12 A dc, pulsed (see 4.5.1) hFE3150 See footnotes at end of table. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/501E 9 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-ST
45、D-750 Symbol Limits Unit Method Conditions Min Max Subgroup 3 High temperature operation: TA= +150C Collector to emitter cutoff current 3041 Bias condition A, VBE= 1.5 V dc ICEX22N6051 VCE= 80 V dc 5.0 mA dc 2N6052 VCE= 100 V dc 5.0 mA dc Low temperature operation: TA= -55C Forward current transfer
46、ratio 3076 VCE= 3 V dc, IC= 6 A dc, pulsed (see 4.5.1) hFE4300 Subgroup 4 Small signal short circuit forward current transfer ratio 3206 VCE= 3 V dc; IC= 5 A dc; f = 1 kHz hfe1,000 Magnitude of small-signal short-circuit forward- current transfer ratio 3306 VCE= 3 V dc, IC= 5 A dc, f = 1.0 MHz |hfe|
47、 10 250 Open circuit output capacitance 3236 VCB= 10 V dc; IE= 0; 100 kHz f 1 MHz Cobo300 pF Pulse response See figure 3 Turn-on time VCC= 30 V dc, IC= 5 A dc, IB1= 20 mA dc ton2.0 s Turn-off time VCC= 30 V dc, IC= 5 A dc, IB1= IB2, = 20 mA dc toff10 s See footnotes at end of table. Provided by IHSN
48、ot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/501E 10 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 5 Safe operating area (dc) 3051 TC= +25C +10C, -0C, t 1s, 1 cycle, see figure 4 Test 1 VCE= 12.5 V dc, IC= 12 A dc Test 2 VCE= 30 V dc, IC= 5 A dc Test 3 2N6051 VCE= 70 V dc, IC= 200 mA dc 2N6052 VCE= 90 V dc, IC= 155 mA dc Safe operating area (switching) 3053 Load condition B, (clamped inductive load), TA= +25C, tr+
