1、 MIL-PRF-19500/509D 9 October 2009 SUPERSEDING MIL-PRF-19500/509C 25 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6338 AND 2N6341, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Depart- ments and Agencies of the
2、Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon power transistors. Four levels of product assurance are provid
3、ed for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, (similar to TO-204AA formally TO-3). * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Types PT(1) (2) TA= +25C PT(1) (2) TC= +25C PTTC= +100C RJARJC(3) VCBOVCEOVEBOICIBTSTGand TOP2N6338 2N6341 W
4、 3.5 3.5 W 200 200 W 112 112 C/W 50 50 C/W 0.875 0.875 V dc 120 180 V dc 100 150 V dc 6.0 6.0 A dc 25 25 A dc 10 10 C -65 to +200 (1) Between TC= +25C and TC= +200C, linear derating factor (average) = 1.14 W/C. (2) Maintain voltage and current according to the safe operating area as shown on figures
5、 2 and 3 and appropriate mounting conditions. (3) See figure 4 for thermal impedance graqphs. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed
6、 to semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be compl
7、eted by 9 January 2009. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/509D 2 * 1.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C. Limit hFE1(1) VBE(SAT)VCE(SAT)CoboIC= 25 A dc VCE= 2.0 V dc IC= 10 A dc VCE=
8、2.0 V dc IC= 10 A dc IB= 1.0 V dc IC= 25 A dc IB= 2.5 A dc IC= 10 A dc IB= 1.0 A dc 1 MHz f 1 MHz VCB= 10 V dc IE= 0 Min Max 12 30 120 V dc 1.8 V dc 1.8 V dc 1.0 pF 450 Limit |hFE| Pulse response RJCf = 10 MHz IC= 1.0 A dc VCE= 10 V dc tontoffMinimum Maximum 4 12 s 0.5 s 1.25 C/W .875 (1) Pulsed, (s
9、ee 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 Government documents. * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information
10、 or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. * 2.2 Government documents. * 2.2.1
11、Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION
12、S MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch or http:/assist.daps.dla.mil or from the Standardizatio
13、n Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/509D 3 FIGURE 1. Physical dimensions (similar to TO-204AA formally TO-3). Provided by IHSNot for Resal
14、eNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/509D 4 Ltr Dimensions Notes Inches Millimeters Min Max Min Max CD .875 22.23 CH .250 .360 6.35 9.14 HR .495 .525 12.57 13.33 4 HR1.131 .188 3.33 4.78 4 HT .060 .135 1.52 3.43 LD .038 .043 0.97 1.09 4, 6 LL .312 .500
15、7.92 12.7 L1.050 1.27 6 MHD .151 1.65 3.83 41.91 4 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 3 PS1.205 .225 5.21 5.72 3 S1.655 .675 16.64 17.15 Notes 1, 2, 5, 7 1, 2, 5, 7 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. These dimensions should
16、 be measured at points .050 inch (1.27 mm) +.005 inch (0.13 mm) -.000 inch (0.00 mm) below seating plane. When gauge is not used, measurement will be made at the seating plane. 4. Two places. 5. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) c
17、onvex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall. 6. Lead diameter shall not exceed twice LD within L1. 7. Lead designation shall be as follows: Lead Number 1 Emitter 2 Base Case Collecto
18、r FIGURE 1. Physical dimensions (similar to TO-204AA formally TO-3) - Continued. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/509D 5 * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a confl
19、ict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS * 3.1 General. The individual item requireme
20、nts shall be as specified in MIL-PRF-19500 and as modified herein. * 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contrac
21、t award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in MIL-PRF-
22、19500 and figure 1 (similar to TO204AA formally TO-3) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein. Where a choice of lead finish is desired, it shall be specified in the contract or purchase order (see 6.2). 3.5 Marking. Marking
23、 shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in
24、 table I. * 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4.VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein
25、 are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). * 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 Group E qualification. Group E inspectio
26、n shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be perf
27、ormed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/509D 6 * 4.3 Screening. Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified he
28、rein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750 (se
29、e 4.3.2) Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.2) 9 ICEX1and hFE2Not applicable 11 ICEX1= 100 percent of initial value or 1 A dc, whichever is greater; hFE2= 25 percent of initial value ICEX1and hFE212 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein; ICEX1= 100 percent of
30、 initial value or 1 A dc, whichever is greater; hFE2= 25 percent of initial value Subgroup 2 of table I herein; ICEX1= 100 percent of initial value or 1 A dc, whichever is greater; hFE2= 25 percent of initial value (1) Shall be performed anytime after temperature cycling, screen 3a; and does not nee
31、d to be repeated in screening requirements. * 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB 20 V dc minimum; TJ= +187.5C 12.5C The selected ICand VCEvalues used for burn-in should fall within the safe operating area of 1.3 herein and on figures 2 and 3 herein. * 4.3.2
32、Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table II, group E, subgroup 4 herein. 4.
33、4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. Group A inspection shall be performed on each sublot. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical me
34、asurements (end-points) shall be in accordance with table I, subgroup 2 herein. * 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIa (JANS) and table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2
35、.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 2037 Test condition A, all internal leads for each device shall be pulled separately. B4
36、 1037 VCE= 20 V dc, 2,000 cycles. B5 1027 VCE= 20 V dc minimum; TJ= +275C minimum; t = 96 hours. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/509D 7 * 4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500.
37、Subgroup Method Condition B3 2037 Test condition A, all internal leads for each device shall be pulled separately. B3 1037 For solder die attach: VCE 20 V dc, 2,000 cycles. B3 1027 For eutectic die attach: VCE 20 V dc adjust PTto achieve TJ= +175C minimum. * 4.4.3 Group C inspection. Group C inspect
38、ion shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500. Subgroup Me
39、thod Condition C2 2036 Test condition A; weight = 10 pounds.; time = 15 s. * C5 3131 Thermal resistance, see 4.5.2. C6 1037 For solder die attach: VCE 20 V dc, 6,000 cycles. C6 1027 For eutectic die attach: VCE 20 V dc, adjust PTto achieve TJ= +175C minimum. * 4.4.4 Group E inspection. Group E inspe
40、ction shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection
41、shall be as specified in the appropriate tables and as follow: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. * 4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method 3131 of MIL-STD-7
42、50 using the guide lines in that method for determining IM, IH, tH, and tsw. The maximum limit for RJCshall be 0.875C/W. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/509D 8 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Sym
43、bol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3131 See 4.3.2 ZJXC/W Breakdown voltage, collector to emitter 2N6338 2N6341 3011 Bias condition D, IC= 50 mA dc Pulsed (see 4.5.1) V(BR)CEO100 150 V dc V dc Collector to emitter c
44、utoff current 2N6338 2N6341 3041 Bias condition D VCE= 50 V dc VCE= 75 V dc ICEO50 A dc Emitter to base cutoff current 3061 Bias condition D, VEB= 6 V dc IEBO100 A dc collector to emitter cutoff current 2N6338 2N6341 3041 Bias condition A, VBE= -1.5 V dc VCB= 100 V dc VCB= 150 V dc ICEX110 10 A dc A
45、 dc Collector to base cutoff current 2N6338 2N6341 3036 Bias condition D VCB= 120 V dc VCB= 180 V dc ICBO10 10 A dc A dc Base to emitter saturation voltage 3066 Test condition A; IB= 1.0 A dc; IC= 10 A dc; pulsed (see 4.5.1) VBE(SAT)1.8 V dc Collector to emitter saturation voltage 3071 IB= 1.0 A dc;
46、 IC= 10 A dc; pulsed (see 4.5.1) VCE(SAT)11.0 V dc Collector to emitter saturation voltage 3071 IB= 2.5 A dc; IC= 25 A dc; pulsed (see 4.5.1) VCE(SAT)21.8 V dc Forward-current transfer ratio 3076 VCE= 2 V dc; IC= 0.5 A dc; pulsed (see 4.5.1) hFE140 Forward-current transfer ratio 3076 VCE= 2 V dc; IC
47、= 10 A dc; pulsed (see 4.5.1) hFE230 120 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/509D 9 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min
48、 Max Subgroup 2 - Continued Forward-current transfer ratio 3076 VCE= 2 V dc; IC= 25 A dc; pulsed (see 4.5.1) hFE312 Subgroup 3 2/ High temperature operation: Collector to emitter cutoff current 2N6338 2N6341 3041 TA= +150C Bias condition A, VBE= -1.5 V dc VCE= 100 V dc VCE= 150 V dc ICEX21.0 1.0 mA
49、dc mA dc Low temperature operation: Forward-current transfer ratio 3076 TA= -55C VCE= 2.0 V dc; IC= 10 A dc; pulsed (see 4.5.1) hFE410 Subgroup 4 Pulse response 3251 Test condition A, except test circuit and pulse requirements in accordance with figure 2. Turn-on time VCC 80 V; IC= 10 A dc IB1= 1.0 A
