1、 MIL-PRF-19500/528B 18 December 2008 SUPERSEDING MIL-PRF-19500/528A 23 July 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6032 AND 2N6033, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Depart
2、ment of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors. Three levels of product assurance are provided f
3、or each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-3). * 1.3 Maximum ratings. Types PT(1) TC= +25C RJCVCBOVCEOVEBOIBICTJand TSTG2N6032 2N6033 W 140 140 C/W 1.25 1.25 V dc 120 150 V dc 90 120 V dc 7.0 7.0 A dc 10 10 A dc 50 40 C -65 to +200 -65 to
4、+200 (1) Between TC= +25C and TC= +200C, linear derating factor (average) = 800 mW/C. 1.4 Primary electrical characteristics at TA= +25C. hFE1 Cobo |hfe| .1 MHz f 1 MHz IE= 0 A dc VCB= 10 V dc IC= 50 A dc VCE= 2.6 V dc IC= 40 A dc VCE= 2.0 V dc pF f = 5 MHz IC= 2.0 A dc VCE= 10 V dc Types Min Max Mi
5、n Max Min Max Min Max 2N6032 2N6033 10 50 10 50 1,000 1,000 10 10 40 40 AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.
6、dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.dla.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 March 2009.
7、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/528B 2 1.4 Primary electrical characteristics at TA= +25C - Continued. VBE(sat)VCE(sat)switching IC= 50 A dc IB= 5 A dc IC= 50 A dc IB= 5 A dc IC= 40 A dc IB= 4 A dc tontoffV dc V dc V dc
8、 (see table I and figure 4) s Type Min Max Min Max Min Max Min Max Min Max 2N6032 2N6033 2.0 1.3 1.0 0.5 0.5 2.0 2.0 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited i
9、n other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this spe
10、cification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are th
11、ose cited in the solicitation or contract. * DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. * DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/assis
12、t.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of
13、 this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/528B 3 Dimensions Ltr Inches M
14、illimeters Notes Min Max Min Max CD .875 22.22 3 CH .250 .450 6.35 11.43 HR .495 .525 12.57 13.34 HR1.131 .188 3.33 4.78 HT .050 .135 1.27 3.43 L1.050 1.27 5, 9 LD .059 .061 1.50 1.55 5, 9 LL .312 7.92 5 MHD .151 .161 3.84 4.09 7 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 4 PS1.205 .225 5.
15、21 5.72 4, 5 S1.655 .675 16.64 17.14 4 NOTES: 1. Dimensions are in inches. * 2. Millimeters are given for general information only. 3. Body contour is optional within zone defined by CD. 4. These dimensions shall be measured at points .050 (1.27 mm) to .055 (1.40 mm) below seating plane. When gauge
16、is not used, measurement shall be made at seating plane. 5. Both terminals. 6. At both ends. 7. Two holes. 8. Terminal 1 is the emitter, terminal 2 is base. The collector shall be electrically connected to the case. * 9. LD applies between L1and LL. Lead diameter shall not exceed twice LD within L1.
17、 10. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions (similar to TO-3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/528B 4 3. REQUIREMENTS * 3.1 General. The individual item r
18、equirements shall be as specified in MIL-PRF-19500 and as modified herein. * 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML)
19、before contract award (see 4.2 and 6.3). * 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as spe
20、cified in MIL-PRF-19500 and figure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance chara
21、cteristics are as specified in paragraph 1.3, 1.4, and table I. * 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other d
22、efects that will affect life, serviceability, or appearance. 4. VERIFICATION * 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). * c. Conformance inspection (see 4.4 and tables I a
23、nd II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet
24、that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by IHSNot for ResaleNo reproduction or networking permitted
25、 without license from IHS-,-,-MIL-PRF-19500/528B 5 * 4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (table E-IV), and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of
26、table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANTX and JANTXV levels (1) 3c Thermal impedance, see 4.3.2 9 Not applicable 10 24 hours minimum 11 ICEX1, hFE112 See 4.3.1; 168 hours minimum 13 Subgroup 2 of table I herein; ICEX1= 100% of initial value or
27、 20 A dc, whichever is greater; hFE1= +25% (1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ= +187.5C 12.5C, TA +35C. JANTX and JANTXV levels 2N6
28、032 -VCB= 60 V dc. 2N6033 -VCB= 100 V dc. * 4.3.2 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). See table II, group E, subgroup 4 h
29、erein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be con
30、ducted in accordance with the conditions specified for subgroup testing in table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. * 4.4.2.1 Group B inspection, table E-VIB (JAN, JANTX, and
31、 JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 For solder die attach: VCB 10 V dc, 2,000 cycles, TA +35C. For eutectic die attach: VCB 10 V dc, TA +35C, adjust PTto achieve TJ= +175C min. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-
32、MIL-PRF-19500/528B 6 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup
33、 Method Condition * C2 2036 Test condition A, weight = 10 pounds, t = 15 s. * C5 3131 See 4.3.2. C6 1037 For solder die attach: VCB 10 V dc, 6,000 cycles, TA +35C. For eutectic die attach: VCB 10 V dc, TA +35C, adjust PTto achieve TJ= +175C min. * 4.4.4 Group E inspection. Group E inspection shall b
34、e conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as sp
35、ecified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except the output capacitor shall be om
36、itted. 4.5.3 Coil selection for safe operating area tests. In selecting coils for use in clamped and unclamped inductive SOAR tests, prime consideration should be given to the recommended commercially available coil. However, due to the extreme critical nature of the coil in these circuits and wide
37、tolerance of some commercially available coils (+100, -50 percent), it shall be the semiconductor manufacturers responsibility, to prove upon request, compliance or equivalency of any coil used (commercial or inplant designed) to be within (+20, -10 percent) of the specified inductance at the rated
38、current and dc resistance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/528B 7 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Limit Unit Method Conditions Symbol Min Max Subgroup 1 Visual and mechanical examination 2071 Sub
39、group 2 Thermal impedance 3131 See 4.3.2 ZJXC/W Breakdown voltage, collector to emitter IC= 200 mA dc; f = 30 - 60 Hz; L = 15 mH (see figure 2) V(BR)CEO2N6032 90 V dc 2N6033 120 V dcBreakdown voltage, collector to emitter IC= 200 mA dc; f = 30 - 60 Hz; L = 15 mH (see figure 2) V(BR)CER2N6032 110 V d
40、c 2N6033 140 V dcBreakdown voltage, collector to emitter IC= 200 mA dc; f = 30 - 60 Hz; L = 2 mH (see figure 2) V(BR)CEX2N6032 120 V dc 2N6033 150 V dcEmitter to base cutoff current 3061 Bias condition D VEB= 7 V dc IEBO10 mA dcCollector to emitter cutoff Current 3041 Bias condition D VCE= 80 V dc I
41、CEO10 mA dc Collector to emitter cutoff Current 3041 Bias condition A; VBE= -1.5 V dc ICEX1250 A dc 2N6032 VCE= 110 V dc 2N6033 VCE= 135 V dc Collector to base cutoff Current 3036 Bias condition D; ICBO2N6032 VCB= 120 V dc 25 mA dc 2N6033 VCB= 150 V dc 25 mA dc Forward-current transfer ratio 3076 VC
42、E= 2.6 V dc; IC= 50 A dc (pulsed see 4.5.1) hFE12N6032 10 50 Forward-current transfer ratio 3076 VCE= 2.0 V dc; IC= 40 A dc (pulsed see 4.5.1) hFE12N6033 10 50 See footnote at end of table. * * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-
43、19500/528B 8 * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Limit Unit Method Conditions Symbol Min Max Subgroup 2 - Continued Collector-emitter saturation voltage 3071 IC= 50 A dc; IB= 5.0 A dc; pulsed (see 4.5.1) VCE(sat)1.3 V dc2N6032 Collector-emitter saturation voltage 307
44、1 IC= 40 A dc; IB= 4.0 A dc pulsed (see 4.5.1) VCE(sat)1.0 V dc2N6033 Base-emitter saturation voltage 3306 Test condition A; IB= 5.0 A dc; IC= 50 A dc; pulsed (see 4.5.1) VBE(sat)2.0 V dc2N6032 Base-emitter saturation voltage 3306 Test condition A; IB= 4.0 A dc; IC= 40 A dc; pulsed (see 4.5.1) VBE(s
45、at)2.0 V dc2N6033 Subgroup 3 High temperature operation TA= +150C Collector to emitter cutoff current 3041 Bias condition D;VBE= 1.5 V dc; VCE= 100 V dc ICEX22N6032 15 mA dc 2N6033 10 mA dc Low temperature operation TA= -55C Forward-current transfer ratio 3076 Pulsed (see 4.5.1) hFE22N6032 VCE= 2.6
46、V dc; IC= 50 A dc 5 2N6033 VCE= 2.0 V dc; IC= 40 A dc 5 Subgroup 4 Magnitude of small-signal short- circuit forward current transfer ratio 3306 VCE= 10 V dc; IC= 2.0 A dc; f = 5.0 MHz /hfe/ 10 40 Open circuit Output capacitance 3236 VCB= 10 V dc; IE= 0; 100 kHz 100 k; Cin 50 pF; rise time 20 nanosec
47、onds. FIGURE 3. Pulse response test circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/528B 14 FIGURE 4. Maximum safe operating area graph (continuous dc). Provided by IHSNot for ResaleNo reproduction or networking permitted witho
48、ut license from IHS-,-,-MIL-PRF-19500/528B 15 FIGURE 5. Safe operating area for switching between saturation and cutoff (unclamped inductive load). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/528B 16 NOTES: 1. Either a clamping circuit or clamping diode may be used. 2. The coil used shall provide a minimum inductance of 50 H with a maximum dc resistance of .1 ohm. 3. RS .1 , 12 W, 1percent tolera
