1、 MIL-PRF-19500/545J 6 February 2013 SUPERSEDING MIL-PRF-19500/545H 12 September 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER, TYPES 2N5151, 2N5153, 2N5151L, 2N5153L, 2N5151U3, AND 2N5153U3, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, JANSM, JANSD, JANSP,
2、 JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCC, JANKCB, JANKCC, JANKCCM, JANKCCD, JANKCCP, JANKCCL, JANKCCR, JANKCCF, JANKCCG, AND JANKCCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described her
3、ein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated devi
4、ce type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices, which have passed RHA requirements. 1.2 Physical dimensions
5、. See figure 1 (similar to TO-205), figures 2 and 3, (JANHC and JANKC), and figure 4 (U3). 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Types PTTA= +25C (1) PTTC= +25C (1) RJA(2) RJC(2) VCBOVCEOVEBOICIC(3) Reverse pulse energy (4) TSTGand TJW W C/W C/W V dc V dc V dc A dc A dc mj C 2N5
6、151, L 2N5153, L 1 1 10 10 175 175 10 10 100 100 80 80 5.5 5.5 2 2 10 10 15 15 -65 to + 200 2N5151U3 2N5153U3 1.16 1.16 100 100 150 150 1.75 1.75 100 100 80 80 5.5 5.5 2 2 10 10 15 15 -65 to + 200 (1) See figures 5, 6, 7, and 8 for temperature-power derating curves. (2) See figures 9, 10, and 11 for
7、 transient thermal impedance graph. (3) This value applies for Pw 8.3 ms, duty cycle 1 percent. (4) This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit figure 12. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or ques
8、tions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:
9、/assist.dla.mil. The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 May 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/545J 2 1.4 Primary electrical characteristics at
10、 TC= +25C. Limits hFE2(1) VCE= 5 V IC= 2.5 A dc |hfe| VCE= 5 V IC= 500 mA dc f = 10 MHz VBE(sat)2(1) IC= 5 A dc IB= 500 mA dc VCE(sat)2(1) IC= 5 A dc IB= 500 mA dc Cobo VCB= 10 V dc IE= 0 f = 1 MHz 2N5151 (2) 2N5153 (2) 2N5151 (2) 2N5153 (2) Min Max (TO-205) Max (U3) 30 90 90 70 200 200 6 7 V dc 2.2
11、 2.2 V dc 1.5 1.5 pF 250 250 (1) Pulsed, see 4.5.1. (2) The limits specified apply to all package outlines unless otherwise stated. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include docu
12、ments cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or
13、5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these docum
14、ents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http
15、s:/assist.dla.mil/quicksearch or https:/assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this docume
16、nt and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,
17、-,-MIL-PRF-19500/545J 3 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 4. TL measured from maximum HD. 5. Outline in this zone is not controlled. 6. CD shall not va
18、ry more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. 7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
19、MMC. 8. LU applied between L1and L2. LD applies between L2and LL minimum. Diameter is uncontrolled in L1and beyond LL minimum. 9. All three leads. 10. The collector shall be electrically and mechanically connected to the case. 11. r (radius) applies to both inside corners of tab. 12. In accordance w
20、ith ASME Y14.5M, diameters are equivalent to x symbology. 13. For transistor types 2N5151 and 2N5153, LL is .5 inch (13 mm) minimum, and .75 inch (19 mm) maximum. 14. For transistor types 2N5151L and 2N5153L, LL is 1.5 inch (38 mm) minimum and 1.75 inch (44.4 mm) maximum. 15. Lead designation, depen
21、ding on device type, shall be as follows: lead numbering; lead 1 = emitter, lead 2 = base, and lead 3 = collector. FIGURE 1. Physical dimensions (TO-205). Dimensions Symbol Inches Millimeters Notes Min Max Min Max CD .305 .335 7.75 8.51 6 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08
22、 TP 7 LD .016 .021 0.41 0.53 8, 9 LL See notes 8, 9, 12, 13 LU .016 .019 0.41 0.48 8, 9 L1.050 1.27 8, 9 L2.250 6.35 8, 9 Q .050 1.27 6 TL .029 .045 0.74 1.14 4, 5 TW .028 .034 0.71 0.86 3 r .010 0.25 11 45 TP 45 TP 7 P .100 2.54 TO-205 Provided by IHSNot for ResaleNo reproduction or networking perm
23、itted without license from IHS-,-,-MIL-PRF-19500/545J 4 Ltr Dimensions Inches Millimeters Min Max Min Max A .100 .105 2.54 2.67 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. Unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. The physical
24、characteristics of the die are; 5. Thickness: .0078 inch (0.198 mm) nominal, tolerance is .005 inch (0.13 mm). Top metal: Aluminum, 25,000 minimum, 33,000 nominal. Back metal: Gold 1,500 minimum, 2,500 nominal. Back side: Collector. Bonding pad: .012 inch (0.305 mm) min. x .030 inch (0.761 mm) minim
25、um. FIGURE 2. JANHCB and JANKCB die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/545J 5 Ltr. Dimensions Inches Millimeters Min Max Min Max A .126 .130 3.20 3.30 NOTES: 1. Dimensions are in inches. 2. Millimeters are given
26、 for general information only. 3. The physical characteristics of the die are: Thickness: .010 inch (0.25 mm) .0015 inch (0.038 mm) nominal. Top metal: Aluminum 30,000 minimum, 33,000 nominal. Back metal: A. Al/Ti/Ni/Ag15k/2k/7k/7k min. 18k/3k/10k/10k nom. B. Gold 2,500 minimum, 3,000 nominal. Back
27、side: Collector. Bonding pad: .012 inch (0.305 mm) min. x .030 inch (0.761 mm) minimum. FIGURE 3. JANHC and JANKC C-version die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/545J 6 Symbol Dimensions Inches Millimeters Min
28、Max Min Max BL .395 .405 10.04 10.28 BW .291 .301 7.40 7.64 CH .1085 .1205 2.76 3.06 LH .010 .020 0.25 0.51 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.93 3.17 LS1 .150 BSC 3.81 BSC LS2 .075 BSC 1.91 BSC LW1 .281 .291 7.14 7.39 LW2 .090 .100 2.29 2.54 Q1 .030 0.762 Q2 .030 0.762 NOTES: 1. Dimensions are
29、 in inches. 2. Millimeters are given for general information only. 3. Terminal 1 - collector, terminal 2 - base, terminal 3 - emitter. SCHEMATIC FIGURE 4. Physical dimensions and configuration for surface mount (U3). 3 1 2 U3 Provided by IHSNot for ResaleNo reproduction or networking permitted witho
30、ut license from IHS-,-,-MIL-PRF-19500/545J 7 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized
31、 by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical di
32、mensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and figure 1 (TO-205), figures 2 and 3 for JANHC and JANKC, and figure 4 for U3 herein. 3.4.1 Current density. Current density of internal conductors shall be as specified in MIL-PRF-19500. 3.4.2 Lead finish. Lead
33、 finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and test levels
34、 shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be as specified
35、in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classifica
36、tion of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I, II, III, and IV). 4.2 Qualification inspection. Qualification inspection shall be in accordance
37、with MIL-PRF-19500 and as specified herein. 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification wa
38、s awarded to a prior revision of the specification sheet that did not request the performance of table IV tests, the tests specified in table IV herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. Provided by
39、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/545J 8 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in acco
40、rdance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500 Measurement JANS levels JANTX and JANTXV levels 3b Not applicable Not applicable (1) 3c Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.3) Thermal impe
41、dance, method 3131 of MIL-STD-750 (see 4.3.3.) 9 ICES1and hFE2Not applicable 10 48 hours minimum. 48 hours minimum. 11 ICES1and hFE2; ICES1= 100 percent of initial value or 100 nA dc, whichever is greater. hFE2= 20 percent ICES1and hFE212 See 4.3.2 See 4.3.2 13 Subgroups 2 and 3 of table I herein; I
42、CES1= 100 percent of initial value or 100 nA dc, whichever is greater. hFE2= 20 percent Subgroup 2 of table I herein; ICES1= 100 percent of initial value or 100 nA dc, whichever is greater. hFE2= 20 percent (1) Shall be performed anytime after temperature cycling, screen 3a, and JANTX and JANTXV lev
43、els do not need to be repeated in screening requirements. 4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance“. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows
44、 JANTX requirements. 4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB= 10-30 V dc, TA= room ambient as defined in the general requirements of 4.5 of MIL-STD-750. Power shall be applied to the device to achieve a junction temperature, TJ= +175C minimum and a minimum PD= 75
45、 percent of PTmaximum rated as defined in 1.3 herein. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD(and VCwhere appropriate). The thermal impedance limit
46、 used in screen 3c of 4.3 herein and table I shall comply with the thermal impedance graph on figures 9, 10, and 11 (less than or equal to the curve value at the same tHtime) and shall be less than the process determined statistical maximum limit as outlined in method 3131. 4.4 Conformance inspectio
47、n. Conformance inspection shall be as specified herein. 4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein. Provided by IHSNo
48、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/545J 9 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA of MIL-PRF-19500 (JANS) and 4.4.2.1 herein. Electrical
49、 measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein. See 4.4.2.2 herein JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) requirements shall be after each step and shall be in acc
