1、 MIL-PRF-19500/573C 11 June 2012 SUPERSEDING MIL-PRF-19500/573B 25 September 2011 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N4209, JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, JANSD,
2、JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHC, JANHCM, JANHCD, JANHCP, JANHCL, JANHCR, JANHCF, JANHCG, JANHCH, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirem
3、ents for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for PNP silicon high-speed logic switching transistors. Four levels of product assurance are provided for each dev
4、ice type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “G”, and “H” are appended to the device prefix to identify devices which have passed RHA requirements. * 1.2 Physical dimensio
5、ns. See figure 1 herein (similar to TO-18) and figure 2 (JANHC and JANKC die). 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. PT (1) TA= +25C PT(2) TC= +25C VCBOVCEOVEBOICTOPand TSTGRJC1/ 2/ mW 360 mW 700 V dc 15 V dc 15 V dc 4.5 mA dc 50 C -65 to +200 C/W 250 (1) Derate linearly 2.05 mW
6、/C above TA 25C. (2) Derate linearly 4.0 mW/C above TC 25C. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact informati
7、on can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil . The documentation and process conversion measures necessary to comply with this document shall be completed by 11 September 2012. Provided by IHSNot for Res
8、aleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/573C 2 1.4 Primary electrical characteristics. Unless otherwise specified, TA= +25C. Limits hFE2 2/VCE= 0.3 V dc IC= 10 mA dc hFE32/ VCE= 1.0 V dc IC= 10 mA dc |hfe| f = 100 MHz VCE= 10 V dc IC= 10 mA dc MIN MAX 50
9、 120 55 125 8.5 Limits VBE(SAT)2IC= 10 mA dc IB= 1.0 mA dc 2/ VCE(SAT)2IC= 10 mA dc IB= 1.0 mA dc 2/ CoboVCB= 5 V dc IE= 0 100 kHz f 1 MHz tonIC= 10 mA dc IB= 1.0 mA dc See figure 3 toffIC= 10 mA dc IB= 1.0 mA dc See figure 3 2 Min Max V dc 0.70 0.95 V dc 0.18 pF 3.0 ns 15 ns 20 1/ Pulsed (see 4.5.1
10、). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort
11、has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks
12、. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices,
13、 General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch or https:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Ave
14、nue, Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, su
15、persedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/573C 3 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3.
16、Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 in
17、ch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1and L2. Dimension LD applies between L2and minimum. Diameter is uncontrolled in L1and beyond LL minimum. 8. All three
18、leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ANSI Y14.5M, diameters are equivalent to Nx symbology. 12. Lead 1 is the emitter; lead 2 is the base; lead 3 is the collector. FIGURE 1. Physical
19、dimensions (similar to TO-18). Symbol Dimensions Notes Inches Millimeters Min Max Min Max CD .178 .195 4.52 4.95 CH .170 .210 4.32 5.33 HD .209 .230 5.31 5.84 LC .100 TP 2.54 TP 6 LD .016 .021 0.41 0.53 7,8 LL .500 .750 12.70 19.05 7,8,13 LU .016 .019 0.41 0.48 7,8 L1.050 1.27 7,8 L2.250 6.35 7,8 P
20、.100 2.54 Q .030 0.76 5 TL .028 .048 0.71 1.22 3,4 TW .036 .046 0.91 1.17 3 r .010 0.25 10 45 TP 45 TP 6 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/573C 4 NOTES: 1. Die Size: .016inch x .016 inch (0.410 mm x 410 mm) 2. Die Thicknes
21、s: .008 inch .0005 inch (0.203 mm 0.0127 mm) 3. Base bonding pad: .0021 inch x .0021 inch (0.0533 mm x 0.0533 mm) 4. Emitter bonding pad: .0021 inch x .0021 inch (0.0533 mm x 0.0533 mm) 5. Back metal: 6,500 1,500 6. Top metal: Aluminum, 17,500 2,500 7. Back side: Collector 8. Glassivation: SiO2, 7,5
22、00 1,500 * FIGURE 2. JANHC and JANKC (A-version) die dimensions. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/573C 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified
23、 herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and d
24、efinitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. * 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (TO-18) and figure 2 (A version) herein. 3.4.1 Lead finish. Le
25、ad finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). * 3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and te
26、st levels shall be as defined in MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristic are as specified in 1.3, 1.4 and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be as spe
27、cified in 4.4.2 and 4.4.3 herein. * 3.8 Marking. Devices shall be marked in accordance with MIL-PRF-19500. The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The “2N“ prefix can also be omitted. The radiation hardened designator M, D, P, L, R, F, G, or H
28、shall immediately precede (or replace) the device “2N” identifier (depending upon degree of abbreviation required). 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or ap
29、pearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III). 4.2 Qualification inspection. Qualificati
30、on inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the pe
31、rformance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.2.2 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in a
32、ccordance with MIL-PRF-19500. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/573C 6 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The fo
33、llowing measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) JANS level JANTX and JANTXV levels (1) 3c Thermal impedance, method 3131 of MIL-STD-750 (see 4.3.2) The
34、rmal impedance, method 3131 of MIL-STD-750 (see 4.3.2) 9 hFE3, ICES1Not applicable 11 ICES1; hFE3; ICES1= 100 percent of initial value or 5 nA dc, whichever is greater, hFE3= 15 percent change from initial value ICES1and hFE312 See 4.3.1 See 4.3.1 13 Subgroups 2 and 3 of table I herein; ICES1= 100 p
35、ercent of initial value or 5 nA dc, whichever is greater; hFE3= 15 percent change from initial value Subgroup 2 of table I herein; ICES1= 100 percent of initial value or 5 nA dc, whichever is greater; hFE3= 15 percent change from initial value (1) Shall be performed anytime after temperature cycling
36、, screen 3a; TX and TXV do not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA= room ambient as defined in 4.5 of MIL-STD-750; VCB= 12 V dc; PT= 360 mW. NOTE: No heat sink or forced air cooling on the devices shall be permitt
37、ed. * 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. * 4.3.3 Thermal impedance. The
38、thermal impedance measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(VCand VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. * 4.4 Conformance inspec
39、tion. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table E-VIb, g
40、roup B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection sha
41、ll be conducted in accordance with the conditions specified for subgroup testing in table E-VIa (JANS) and table E-VIb (JANTX and JANTXV) of MIL-PRF-19500. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. Provided by IH
42、SNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/573C 7 4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500. Subgroup Method Conditions B4 1037 VCB= 10 V dc; PT= 360 mW at TA= room ambient as defined in the general requirements of MIL-STD-
43、750. ton= toff= 1 minute minimum for 2,000 cycles. No heat sink or forced-air cooling on devices shall be permitted. B5 1027 VCB= 10 V dc; for 96 hours, TA= +125C for 96 hours, PT= 360 mW at TA= +100C or adjusted as required according to the chosen TAto give an average TJ= +275C. B6 3131 See 4.5.3.
44、* 4.4.2.2 Group B inspection, table E-VIb (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Conditions B3 1027 VCB= 12 V dc; PT= 360 mW at TA= room ambient as defined in the general requirements of MIL-STD-750. No heat sink or forced-air cooling on the devices shall be permitted. B5 3131 See 4.5.
45、3. * 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall b
46、e selected from each inspection lot. See MIL-PRF-19500. b. Shall be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2 conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (s
47、ubgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. * 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIII of MIL-PRF-19500. Elect
48、rical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. * 4.4.3.1 Group C inspection, table E-VIII of MIL-PRF-19500. Subgroup Method Conditions C2 2036 Test condition E. C6 1026 VCB= 12 V dc, PT= 360 mW at TA= room ambient as defin
49、ed in the general requirements of MIL-STD-750. No heat sink or forced-air cooling on device shall be permitted. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/573C 8 * 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Cond
