1、 MIL-PRF-19500/582B 30 January 2009 SUPERSEDING MIL-PRF-19500/582A 21 August 1999PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON AMPLIFIER, TYPES 2N5679 AND 2N5680, JAN, JANTX AND JANTXV This specification is approved for use by all Departments and Agencies of the Depa
2、rtment of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, amplifier transistor. Three levels of product assurance are provi
3、ded for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1, (TO-39). * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT(1) TA= +25C PTTC= +25C (2) RJCVCBOVCEOVEBOICIBTJand TSTG2N5679 2N5680 W 1.0 1.0 W 10 10 C 17.5 17.5 V dc 100 120 V dc 100 120 V
4、 dc 4.0 4.0 A dc 1.0 1.0 A dc 0.5 0.5 C -65 to +200 (1) Derate linearly 5.7 mW/C for TA +25C; (2) Derate linearly 57mW/C for TC +25C. 1.4 Primary electrical characteristics at TA= +25C. Limits hFEat VCE = 2.0 V dc (1) /hfe/ f = 10 MHz Cobof = 1.0 MHz VCE(sat)1 (1) IC = 250 mA dc VBE(sat)1 (1) IC = 2
5、50 mA dchFE1 IC= 250 mA dc hFE2 IC= 500 mA dc hFE3 IC= 1.0 A dc VCE = 10 V dc IC = 100 mA dc VCB = 20 V dcIE = 0 IB = 25 mA dc IB = 25 mA dc Min Max 40 150 20 5 3.0 pF 50 0.6 V dc 1.1 (1) Pulsed see 4.5.1. AMSC N/A FSC 5961 INCH-POUND * Comments, suggestions, or questions on this document should be
6、addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at http:/assist.daps.d
7、la.mil/. The documentation and process conversion measures necessary to comply with this revision shall be completed by 30 April 2009. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/582B 2 2. APPLICABLE DOCUMENTS * 2.1 General. The doc
8、uments listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of thi
9、s list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, an
10、d handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. * DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. * DEPARTMENT OF
11、 DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-
12、5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations
13、unless a specific exemption has been obtained. 3. REQUIREMENTS * 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. * 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer auth
14、orized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface requireme
15、nts and physical dimensions. The interface requirements and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (TO-39) herein. 3.4.1 Lead material and finish. Lead finish shall be solderable as specified in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead materi
16、al or finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4
17、, and table I herein. * 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. * 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceabi
18、lity, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/582B 3 * FIGURE 1. Physical dimensions for (TO-39). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/582
19、B 4 * FIGURE 1. Physical dimensions for (TO-39) - Continued. Symbol Dimensions Notes (see note 3) Inches Millimeters Min Max Min Max CD 0.305 .335 7.75 8.51 CH 0.240 .260 6.10 6.60 HD 0.335 .370 8.51 9.39 LC 0.200 BSC 5.08 BSC 9 LD 0.016 0.021 0.41 0.53 9, 10 LL 0.500 0.750 12.70 19.05 10, 11 LU 0.0
20、16 0.019 0.41 0.48 10, 11 L10.050 1.27 10, 11 L20.250 6.35 10, 11 P 0.100 2.54 8 Q 0.050 1.27 7 r 0.010 0.25 12 TL 0.029 0.045 0.74 1.14 6 TW 0.028 0.034 0.72 0.86 5 45 BSC 9 Term 1 Emitter Term 2 Base Term 3 Collector Provided by IHSNot for ResaleNo reproduction or networking permitted without lice
21、nse from IHS-,-,-MIL-PRF-19500/582B 5 NOTES: 1. Dimensions are in inches. * 2. Millimeters are given for general information only. 3. Refer to applicable symbol list. 4. Lead number 1 is the emitter, lead number 2 is the base, lead number 4 is omitted from this outline. The collector is number 3 and
22、 is electrically connected to the case. 5. Beyond r (radius) max, TW shall be held for a minimum length of .011 inch (0.28 mm). 6. TL measured from maximum HD. 7. Outline in this zone is not controlled. 8. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automat
23、ic handling. 9. Leads at gauge plane .054 + .001 - .000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 10. LU applies between L1and L2. LD applies between L2and LL minimum. D
24、iameter is uncontrolled in L1and beyond LL minimum. 11. All three leads. 12. r (radius) applies to both inside corners of tab. * 13. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. * FIGURE 1. Physical dimensions for (TO-39) - Continued. Provided by IHSNot for ResaleNo repro
25、duction or networking permitted without license from IHS-,-,-MIL-PRF-19500/582B 6 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4
26、.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and herein. * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision
27、 of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.3 Screening (JANTX, and JANTXV lev
28、els only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-1
29、9500) JANTX and JANTXV levels (1) 3c Method 3131 (see 4.3.2) 11 ICBO, and hFE212 See 4.3.1 13 Subgroup 2 of table I herein ICBO= 100 percent of initial value, or 10 nA dc whichever is greater; hFE2= 15 percent of initial value. (1) Shall be performed anytime after temperature cycling, screen 3a; and
30、 does not need to be repeated in screening requirements. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB 20 V dc; PT1.0 W at TA= 30C 5C. NOTE: No heat sink or forced air cooling on the devices shall be permitted. * 4.3.2 Thermal impedance. The thermal impedance measureme
31、nts shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW(and VHwhere appropriate). See table III, group E, subgroup 4 herein. Measurement delay time (tMD) = 60 s max. Provided by IHSNot for ResaleNo reproduction or netwo
32、rking permitted without license from IHS-,-,-MIL-PRF-19500/582B 7 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. Alternate flow is allowed for quality conformance inspection in accordance with MIL-PRF-19500. 4.4.1 Group A inspec
33、tion. Group A inspection shall be conducted in accordance with table I herein. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified. Separate samples may b
34、e used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double the sample size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped
35、. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. Step Method Condition 1 1027 Steady-state life: 340 hours, VCB 20 V dc, TJ= 150C minimum. External heating of the device under test to achiev
36、e TJ= 150C minimum is allowed provided that a minimum of 75 percent of rated power is dissipated. No heat sink or forced-air cooling on the devices shall be permitted. n = 45 devices, c = 0. * 2 1026 The steady-state life test of step 1 shall be extended to 1,000 hours for each die design. Samples s
37、hall be selected from a wafer lot every twelve months of wafer production, however, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-temperature life (non-operating), TA= +200C. n = 22, c = 0. 4.4.2.1 Group B sample selection. Samples selected for grou
38、p B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. b. Shall be chosen from an inspection lot that has been submitted to and passed group A, s
39、ubgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection. Group C inspection shal
40、l be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table II herein. * 4.4.3.1 Group C inspection,
41、table E-VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E. * C5 3131 See 4.3.2, RJC= 17.5C/W. C6 Not applicable. 4.4.3.2 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any lot containing the intended package t
42、ype and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. Provided
43、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/582B 8 * 4.4.4 Group E inspection. Group E inspection for qualification only shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and t
44、able III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse
45、measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/582B 9 * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method
46、Conditions Min Max Subgroup 1 2/ Visual and mechanical examination 3/ 2071 n = 45 devices, c = 0 Solderability 3/ 2026 n = 15 leads, c = 0 Resistance to 3/ 4/ solvent 1022 n = 15 devices, c = 0 Temp cycling 3/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Hermetic seal Fine leak Gross leak
47、 1071 n = 22 devices, c = 0 Electrical measurements Table I, subgroup 2 Bond strength 3/ 2037 Precondition TA= +250C at t = 24 hrs or TA= +300C at t = 2 hrs, n = 11 wires, c = 0 Subgroup 2 Thermal impedance 5/ 3131 See 4.3.2 ZJCC/W Breakdown voltage collector to emitter 2N5679 2N5680 3011 Bias condi
48、tion D, pulsed (see 4.5.1), IC= 10 mA dc V(BR)CEO 100 120 V dc Collector emitter cutoff current 2N5679 2N5680 3041 Bias condition D VCE = 70 V dc VCE = 80 V dcICEO 10 A dc Collector emitter cutoff current 2N5679 2N5680 3041 Bias condition A, VBE = 1.5 V dc VCE = 100 V dc VCE = 120 V dcICEX1 100 nA d
49、c Collector to base cutoff current 2N5679 2N5680 3036 Bias condition D VCE = 100 V dc VCE = 120 V dc ICBO 100 nA dc Emitter to base cutoff current 3061 Bias condition D, VBE = 4.0 V dc IEBO 1.0 A dc See footnotes at end of table. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro
