1、 MILPRF19500/649B 19 JULY 2013 SUPERSEDING MILPRF19500/649A 16 August 1998 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, SCHOTTKY TYPE 1N6781, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Departmen
2、t of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MILPRF19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, Schottky power rectifier diodes. Four levels of product assurance are provided
3、for each device type as specified in MILPRF19500. 1.2 Physical dimensions. The device package style is modified TO257AA (two pin, isolated) in accordance with figure 1. 1.3 Maximum ratings. Unless otherwise specified, TC= +25C. Type VRRM = VRWMIO TJ= TC= 100C IFSM TC=+100C tp= 8.3 ms RJCRJATSTG and
4、TOP V (pk) dc A dc A (pk) C/W C/W C 1N6781 60 15 120 2.5 45 65 to +150 (1) Derate at 300mA/C above TC= +100C. 1.4 Primary electrical characteristics. Unless otherwise specified, TC=+25C. Type VF1 IF= 5 A dc VFS IF= 15 A dc IR1 VR=0.8 VRWM(see 1.3) IR1 VR=0.8 VRWM TC=+125C (see 1.3) CJ VR=5 V f = 1 M
5、Hz V dc V dc mA dc mA dc pF 1N6781 60 15 120 2.5 45 AMSC N/A FSC 5961INCHPOUND The documentation and process conversion measures necessary to comply with this document shall be completed by 15 January 2014. Comments, suggestions, or questions on this document should be addressed to DLA Land and Mari
6、time, ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil. Provided by IHSNot for ResaleNo reproduction or
7、 networking permitted without license from IHS-,-,-MILPRF19500/649B 2 FIGURE 1. Physical dimensions (modified TO257AA, 2 pin, isolated). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/649B 3 Symbol Dimensions Notes Inches Millimeters Min
8、 Max Min Max BL .410 .430 10.4 10.9 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.14 LL .500 .750 12.70 19.95 LO .150 typical 3.81 LS .200 bsc 5.08 MHD .140 .150 3.55 3.80 MHO .527 .537 13.4 13.6 TL .645 .665 16.4 16.9 TT .040 .050 1.02 1.27 TW .410 .420 10.4 10.7 NOTES: 1. Dimensions are in inches. Mi
9、llimeters are given for general information only. 2. Terminal 1 is the cathode and terminal 2 is the anode. 3. All terminals are isolated from case. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions (TO257AA, 2 pin, isolated) Continued. Provide
10、d by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/649B 4 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other s
11、ections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specificatio
12、n, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited i
13、n the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MILPRF19500 Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MILSTD750 Test Methods for Semiconductor Devices. (Copies of these documents are available online at http:/quicksearch.dla.mil or https:/
14、assist.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 191115094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the t
15、ext of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MILPRF19500 and as modified herein. 3.2 Qualifica
16、tion. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. The
17、abbreviations, symbols, and definitions used herein shall be as specified in MILPRF19500. 3.4 Interface and physical dimensions. The interface requirements and physical dimensions shall be as specified in MILPRF19500 and on figure 1 (a modified two pin version of TO257AA) herein. 3.4.1 Lead finish.
18、Unless otherwise specified, the lead finish shall be solderable in accordance with MILSTD750, MILPRF19500, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Lead formation. When lead formation is performed, as a minimum, the vend
19、or shall perform 100 percent hermetic seal in accordance with screen 14 of EIV of MILPRF19500 and 100 percent DC testing in accordance with table I, subgroup 2 herein. 3.4.3 Lead isolation. Methods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minim
20、um of 90 percent Al2O3(ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/649B 5 3.4.4 Polarity. The identification of terminals of
21、 the device package shall be as shown on figure 1. Terminal 1 shall be connected to the cathode and terminal 2 shall be connected to the anode. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and
22、table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in table I herein. 3.7 Marking. Marking shall be in accordance with MILPRF19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall b
23、e free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4
24、 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MILPRF19500, and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior
25、revision of the specification sheet that did not request the performance of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. 4.3 Screening (quality levels JA
26、NS, JANTX and JANTXV only). Screening shall be in accordance with table EIV of MILPRF19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table EIV of MIL-PRF-
27、19500) Measurement JANS level JANTX and JANTXV levels 3c (1) Thermal impedance (see 4.3.2) Thermal impedance (see 4.3.2) 9 and 10 Not applicable Not applicable 11 IR1and VF2IR1and VF212 See 4.3.1, t = 240 hours See 4.3.1, t = 48 hours 13 See subgroups 2 and 3 of table I herein; IR1and VF2; IR1 100 p
28、ercent of initial value or 75 A dc, whichever is greater; VF2 50 mV. See subgroups 2 of table I herein; IR1and VF2; IR1 100 percent of initial value or 75 A dc, whichever is greater; VF2 50 mV. (1) Thermal impedance shall be performed any time after temperature cycling (screen 3a). Quality levels JA
29、NTX and JANTXV do not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/649B 6 4.3.1 Power burn-in conditions. The power burn-in conditions shall be as follows: Test method 1038 of MILSTD750, t
30、est condition A; TC= +125C minimum; VR= 48 V dc. 4.3.2 Thermal impedance (ZJX) measurements for screening. The thermal impedance measurements shall be performed in accordance with test method 3101 of MILSTD750 using the guidelines in that test method for determining IH, IM, tH, tSW(VCand VHwhere app
31、ropriate). Measurement delay time (tMD) = 70 s maximum. The thermal impedance limit used in screen 3c and table I, subgroup 2 herein shall be set statistically by the supplier. See table II, subgroup 4 (group E) herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with M
32、ILPRF19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table EV of MILPRF19500 and table I herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table II herein. 4.4.2 G
33、roup B inspection. Group B inspection shall be conducted in accordance with the test methods and conditions specified for subgroup testing in table EVIA (JANS) and table EVIB (JANTX and JANTXV) of MILPRF19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in acc
34、ordance with the applicable steps and footnotes of 4.6 herein. 4.4.2.1 Quality level JANS (table EVIA of MILPRF19500). Subgroup Method Condition B4 1037 IF or IO = 2A (minimum); TJ = +85C, minimum. B5 1038 Test condition A, TJ= TC= +150C, VR= 48V dc. B6 3101 Limit for thermal resistance is RJC= 2.5C
35、/W. 4.2.2 Quality levels JANTX and JANTXV (table EVIB of MILPRF19500). Subgroup Method Condition B3 1037 IF or IO = 2A (minimum); TJ = +85C, minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table EV
36、II of MILPRF19500 and as follows herein. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable step and footnotes of 4.6 herein. Subgroup Method Condition C2 2036 Test condition A, weight = 5 pounds 10 ounce (2.25Kg 0.28Kg), t = 15 s 3 s. C2 2006 X1,
37、Y1, Z1, and Z2 axis. C5 3101 See 4.5.2. C6 1037 IFor IO= 2A (minimum); TJ= +85C, minimum. C6 1038 JANS only; test condition A, 1000 hours, TJ= TC= +150C, VR= 48V dc. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/649B 7 4.4.4 Group E ins
38、pection. Group E inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in appendix E, table EIX of MILPRF19500 and as specified in table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta re
39、quirements shall be in accordance with the applicable steps and footnotes of 4.6 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse response measurements. The conditions for the pulse response measurement shall be as sp
40、ecified in section 4 of MILSTD750. 4.5.2 Thermal resistance (RJC). Thermal resistance measurements shall be performed in accordance with test method 3101 of MILSTD750. The maximum limits for RJC(max)shall be 2.5C/W for devices in the 2 pin case style. The following parameter measurements shall apply
41、: a. IHforward heating current - 9.9 A b. IMmeasure current - 15 mA c. tHheating time - Steady state (see MILSTD750, method 3101) d. tMDmeasurement delay time - 35 ms e. VHheating voltage - 1 V 4.5.3 Thermal impedance (ZJX). 4.5.3.1 Measurements for initial qualification or requalification. The ther
42、mal impedance measurements shall be performed in accordance with test method 3101 of MILSTD750. Read and record data for thermal impedance derived conditions limits and thermal response curve shall be supplied to the qualifying activity on the qualification lot prior to qualification approval. 4.5.3
43、.2 Measurements for group A. The thermal impedance measurements shall be performed in accordance with test method 3101 of MILSTD750. The following test conditions shall be used for thermal impedance, group A inspection: a. IHforward heating current - 9.9 A b. IMmeasure current - 15 mA c. tHheating t
44、ime - 200 ms d. tMDmeasurement delay time - 35 ms e. VHheating voltage - 1 V The maximum limit for thermal impedance under these conditions are ZJX(max)= 2.4C/W. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MILPRF19500/649B 8 4.6 Electrical and de
45、lta measurements. The values for the electrical and delta measurements for groups A, B, C, and E shall be as specified below. (1) (2) (3) Step Inspection MILSTD750 Symbol Limits Unit Method Conditions Min Max 1 Forward voltage 4011 IF= 10 A dc pulsed VF20.81 V dc 2 Reverse leakage current 4016 VR= 4
46、8 V dc pulsed DC method IR10.30 mA dc 3 Forward voltage 4011 IF= 10 A dc pulsed VF250 mV dc from initial reading 4 Reverse leakage current 4016 VR= 48 V dc pulsed DC method IR1100 percent of initial value or 75 A dc whichever is greater 5 Thermal impedance 3101 See 4.5.3 ZJX2.40 C/W (1) The electric
47、al measurements for group B, quality level JANS shall be as follows: a. In addition to the measurements specified for subgroup 3 of table EVIA of MILPRF19500, the measurements of steps 1 and 2 shall also be taken. b. In addition to the measurements specified for subgroup 4 of table EVIA of MILPRF195
48、00, the measurements of steps 1, 2, 3, 4, and 5 also be taken. c. In addition to the measurements specified for subgroup 5 of table EVIA of MILPRF19500, the measurements of steps 1, 2, 3, and 4 also be taken. (2) The electrical measurements for group B, quality level JANTX and JANTXV shall be as follows: a. In addition to the measurement
