1、 MIL-PRF-19500/676E 13 December 2013 SUPERSEDING MIL-PRF-19500/676D 11 December 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES, JANTXVR AND JANSR This specification is approved
2、for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mo
3、de, MOSFET, radiation hardened, power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS). 1.2 Physical dimensions. See figure 1, TO-257AA and figure 2 (U3, TO-276A
4、A). * 1.3 Maximum ratings. Unless otherwise specified, TA= +25C. Type PT(1) TC= +25C PTTA= +25C (free air) RJC(2) VDSVDGVGSID1(3) (4) TC= +25C ID2(3) (4) TC= +100C ISIDM(5) TJand TSTGVISO70,000 foot altitude 2N7465T3, U3 2N7466T3, U3 W 75 75 W 2 2 C/W 1.67 1.67 V dc 400 500 V dc 400 500 V dc 20 20 A
5、 dc 5.0 4.4 A dc 3.2 2.8 A dc 5.0 4.4 A(pk) 20 17.6 C -55 to +150 V dc 400 500 (1) Derate linearly 0.6 W/C for TC +25C. * (2) See figure 3, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by package and internal wires and may be limited by pi
6、n diameter: (4) See figure 3, maximum drain current graphs. (5) IDM= 4 X ID1as calculated in note (3). AMSC N/A FSC 5961 INCH-POUND ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMD* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Col
7、umbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.dla.mil/. The documentation and process conversion measures necessary to comply with this
8、revision shall be completed by 13 March 2014. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/676E 2 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. All terminals are isolated from the case.
9、 4. This area is for the lead feed-thru eyelets (configuration is optional, but will not extend beyond this zone). 5. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. FIGURE 1. Physical dimensions for TO-257AA (2N7465T3 and 2N7466T3). Ltr Inches Millimeters Min Max Min Max BL
10、 .410 .430 10.41 10.92 BL1.033 0.84 CH .190 .200 4.83 5.08 LD .025 .035 0.64 0.89 LL .600 .650 15.24 16.51 LO .120 BSC 3.05 BSC LS .100 BSC 2.54 BSC MHD .140 .150 3.56 3.81 MHO .527 .537 13.39 13.64 TL .645 .665 16.38 16.89 TT .035 .045 0.89 1.14 TW .410 .420 10.41 10.67 Term 1 Drain Term 2 Source T
11、erm 3 Gate Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/676E 3 Symbol Dimensions Inches Millimeters Min Max Min Max BL .395 .405 10.04 10.28 BW .291 .301 7.40 7.64 CH .124 3.15 LH .010 .020 0.25 0.51 LW1 .281 .291 7.14 7.39 LW2 .090
12、.100 2.29 2.54 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.93 3.17 LS1 .150 BSC 3.81 BSC LS2 .075 BSC 1.91 BSC Q1 .030 0.76 Q2 .030 0.76 TERM 1 Drain TERM 2 Gate TERM 3 Source NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, di
13、ameters are equivalent to x symbology. FIGURE 2. Physical dimensions for TO-276AA (2N7465U3 and 2N7466U3). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/676E 4 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSS VGS=
14、 0 VGS(TH)1VDS VGSID = 1.0 Max IDSS1VGS= 0 VDS= 80 Max rDS(ON)(1) VGS= 12 V dc EAS at ID1IAS ID= 1.0 mA dc mA dc percent of rated VDSTJ= +25C at ID2TJ= +150C at ID2V dc V dc A dc ohm ohm mJ A Min Max 2N7465T3, U3 2N7466T3, U3 400 500 2.5 2.5 4.5 4.5 50 50 1.39 1.77 3.0 3.9 150 150 5.0 4.4 (1) Pulsed
15、 (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While ev
16、ery effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, an
17、d handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconduct
18、or Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at http:/quicksearch.dla.mil/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue,
19、Building 4D, Philadelphia, PA 19111-5094.) * 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, superse
20、des applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/676E 5 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-195
21、00 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbre
22、viations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows: IASRated avalanche current, non-repetitive. nC . nano Coulomb. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as speci
23、fied in MIL-PRF-19500 and on figures 1 (TO-257AA) and 2 (U3, surface mount, TO-276AA) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see
24、 6.2). 3.4.2 Internal construction. Multiple chip construction is not permitted. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic discharge protection. 3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to t
25、he accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in
26、 conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source
27、, R 100 k, whenever bias voltage is to be applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test require
28、ments shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. Pr
29、ovided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/676E 6 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3
30、). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case
31、 qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualifi
32、cation. * 4.2.1.1 Single event effects (SEE). SEE shall be performed at initial qualification and after process or design changes which may affect radiation hardness (see table III and table IV). Upon qualification, manufacturers shall provide the verification test conditions from section 5 of metho
33、d 1080 of MIL-STD-750 that were used to qualify the device for inclusion into section 6 of the performance specification sheet. End-point measurements shall be in accordance with table II. SEE characterization data shall be made available upon request of the qualifying or acquiring activity. Provide
34、d by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/676E 7 * 4.3 Screening (JANS and JANTXV levels only). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accor
35、dance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) (1) (2) Measurement JANS level JANTXV level (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, EAS(see 4.3.2) Metho
36、d 3470 of MIL-STD-750, EAS(see 4.3.2) (3) 3c Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance (see 4.3.3) 9 Subgroup 2 of table I herein; IGSSF1, IGSSR1, IDSS1 Not applicable 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD
37、-750, test condition B 11 Subgroup 2 of table I herein; IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)1IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever i
38、s greater. Subgroup 2 of table I herein; IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(TH)112 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1= 20 nA
39、 dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(TH)1= 20 percent of initial value. Subgroup 2 of table I herein; IGSSF1= 20 nA dc or 100 percent of initial value, whichever is
40、greater. IGSSR1= 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1= 10 A dc or 100 percent of initial value, whichever is greater. rDS(on)1= 20 percent of initial value. VGS(TH)1= 20 percent of initial value. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measur
41、ed. (2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. * (3) Shall be performed anytime after temperature cycling, screen 3a; JANTXV does not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permi
42、tted without license from IHS-,-,-MIL-PRF-19500/676E 8 4.3.1 Gate stress test. Apply VGS= 30 V minimum for t = 250 s minimum. 4.3.2 Single pulse avalanche energy (EAS). a. Peak current (IAS) IAS(max). b. Peak gate voltage (VGS) 12 V. c. Gate to source resistor (RGS) 25 RGS 200. d. Initial case tempe
43、rature (TC) +25C +10C, -5C. e. Inductance (L) . ( )212EIV VVASDBR DDBRmH minimum. f. Number of pulses to be applied . 1 pulse minimum. g. Supply voltage (VDD) 50 V. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750 using the
44、guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). (See figure 4 herein.) Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specif
45、ied herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the
46、conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-PRF-19500, and herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Conditi
47、on B3 1051 Test condition G, 100 cycles. B3 2075 See 3.4.2 herein. B3 2077 Scanning electron microscope (SEM) qualification may be performed anytime prior to lot formation. * B4 1042 Condition D. No heat sink nor forced-air cooling on the device shall be permitted during the on cycle. The heating cy
48、cle shall be 60 seconds minimum. B5 1042 Test condition B, VGS= rated TA= +175C, t = 24 hours. B5 1042 Condition A, VDS= rated; TA= +175C; t = 120 hours. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/676E 9 * 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Method Condition B2 1051 Test condition G, 25 cycles. (45 total, including 20 cycles performed in screening) * B3 1042 Test condition D. No heat sink nor forced-air cooling on the device shall be permitted during
