1、 MIL-PRF-19500/704E 25 January 2013 SUPERSEDING MIL-PRF-19500/704D 13 December 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, 2N7487U3, AND 2N7555U3 JANTXVR AND
2、 JANSR This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requireme
3、nts for a N-channel, enhancement-mode, MOSFET, radiation hardened (total dose and single event effects (SEE), power transistor. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (I
4、AS). See 6.5 for JANHC and JANKC die versions. 1.2 Physical dimensions. See figure 1, (surface mount, TO-276AA, SMD-0.5). 1.3 Maximum ratings. TA= +25C, unless otherwise specified. Type PT(1) TC= +25C PTTA= +25C RJC(2) VDSVDGVGSID1(3) (4) TC=+25C ID2 TC= +100C ISIDM (5) TJand TSTGVISO 70,000 ft. alt
5、itude W W C/W V dc V dc V dc A dc A dc A dc A (pk) C V dc 2N7485U3 75 2.5 1.67 130 130 20 20 12.5 20 80 -55 N/A 2N7486U3 75 2.5 1.67 200 200 20 12 7.8 12 48 to N/A 2N7487U3 75 2.5 1.67 250 250 20 10 6.4 10 40 +150 250 2N7555U3 75 2.5 1.67 250 250 20 10 6.4 10 40 +150 250 (1) Derate linearly by 0.6 W
6、/C for TC +25C. (2) See figure 2, thermal impedance curves. (3) The following formula derives the maximum theoretical IDlimit. IDis limited by package and internal construction. (4) See figure 3, maximum drain current graph. (5) IDM= 4 X ID1as calculated in note (3). AMSC N/A FSC 5961 INCH-POUND Com
7、ments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIS
8、T Online database at https:/assist.dla.mil/. ( ) ( ) Tat )on (Rx RT- T= IJMDSJCCJMDThe documentation and process conversion measures necessary to comply with this revision shall be completed by 25 April 2013. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I
9、HS-,-,-MIL-PRF-19500/704E 2 1.4 Primary electrical characteristics at TC= +25C. Type Min V(BR)DSSVGS= 0 ID= 1.0mA dc VGS(TH)1VDS VGSID= 1.0 mA dc Max IDSS1VGS= 0 VDS= 80% Max rDS(on)(1) VGS= 12V, ID= ID2EAS of rated VDSTJ= +25C TJ= +150C 2N7485U3 2N7486U3 2N7487U3 2N7555U3 V dc 130 200 250 250 V dc
10、Min Max 2.5 4.5 2.5 4.5 2.5 4.5 2.5 4.5 A dc 10 10 10 10 0.080 0.220 0.400 0.400 0.184 0.486 0.780 0.780 mJ 65 60 58 58 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not
11、include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sectio
12、ns 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of
13、 these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available onli
14、ne at https:/assist.dla.mil/quicksearch/ or https:/assist.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of
15、 this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without licens
16、e from IHS-,-,-MIL-PRF-19500/704E 3 Symbol Dimensions Inches Millimeters Min Max Min Max BL .395 .405 10.03 10.29 BW .291 .301 7.39 7.65 CH .124 3.15 LH .010 .020 0.25 0.51 LW1 .281 .291 7.14 7.39 LW2 .090 .100 2.29 2.54 LL1 .220 .230 5.59 5.84 LL2 .115 .125 2.92 3.18 LS1 .150 BSC 3.81 BSC LS2 .075
17、BSC 1.91 BSC Q1 .030 0.762 Q2 .030 0.762 TERM 1 Drain TERM 2 Gate TERM 3 Source NOTES: 1. Dimension are in inches. 2. Millimeters are given for information only. 3. The lid shall be electrically isolated from the drain, gate and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to
18、x symbology. FIGURE 1. Dimensions and configuration (TO-276AA, SMD-0.5). Q1 (2X)BWBLCH LW1LL1LL2(2X)CLCLLS2LS1LW2(2X)Q2CLLH(3X)12 3-C-0.10 (0.004)-B-A-0.36 (0.014) CM A B MM3 SURFACESProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/704E
19、4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on
20、the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions
21、 shall be as specified in MIL-PRF-19500, and on figure 1 (TO-276AA, SMD-0.5) herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.
22、4.2 Multiple chip construction. Multiple chip construction is not permitted to meet the requirements of this specification. 3.5 Electrostatic discharge (ESD) protection. The devices covered by this specification require electrostatic discharge protection (see 3.5.1). 3.5.1 Handling. Metal oxide semi
23、conductor (MOS) devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. However, the following handling practices are recommended (see 3.5). a. Devices should be handled on benches with conductive handling devices. b. Ground test equipment, tools, a
24、nd personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care should be exercised during test and troubleshooting to app
25、ly not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R or 100 k, whenever bias voltage is applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1
26、.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I. 3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be fr
27、ee from other defects that will affect life, serviceability, or appearance. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/704E 5 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are class
28、ified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I and II). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.2.1 Group E qualification. Group E inspection shall be perform
29、ed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on the fir
30、st inspection lot of this revision to maintain qualification. 4.2.2 SEE. Design capability shall be tested on the initial qualification and thereafter whenever a major die design or process change is introduced. See the safe operation area graph herein. Provided by IHSNot for ResaleNo reproduction o
31、r networking permitted without license from IHS-,-,-MIL-PRF-19500/704E 6 4.3 Screening (JANS and JANTXV). Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the li
32、mits of table I herein shall not be acceptable. Screen (see table E-IV Measurement of MIL-PRF-19500) (1) (2) JANS JANTXV (3) Gate stress test (see 4.3.1) Gate stress test (see 4.3.1) (3) Method 3470 of MIL-STD-750, EAS(see 4.3.2) Method 3470 of MIL-STD-750, EAS(see 4.3.2) (3) 3c Method 3161 of MIL-S
33、TD-750, thermal impedance, (see 4.3.3) Method 3161 of MIL-STD-750, thermal impedance, (see 4.3.3) 9 Subgroup 2 of table I herein Not applicable IGSSF1, IGSSR1, IDSS1as a minimum 10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condition B 11 IGSSF1, IGSSR1, IDSS1, rDS
34、(ON)1, VGS(TH)1 Subgroup 2 of table I herein. IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. IGSSF1, IGSSR1, IDSS1, rDS(ON)1, VGS(
35、TH)1 Subgroup 2 of table I herein. 12 Method 1042 of MIL-STD-750, test condition A Method 1042 of MIL-STD-750, test condition A 13 Subgroups 2 and 3 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent of initial value, whichever
36、 is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. Subgroup 2 of table I herein IGSSF1 = 20 nA dc or 100 percent of initial value, whichever is greater. IGSSR1 = 20 nA dc or 100 percent o
37、f initial value, whichever is greater. IDSS1 = 10 A dc or 100 percent of initial value, whichever is greater. rDS(ON)1 = 20 percent of initial value. VGS(TH)1 = 20 percent of initial value. (1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1are measured. (2) An out-of-family program to cha
38、racterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1shall be invoked. (3) Shall be performed anytime after temperature cycling, screen 3a. JANTX and JANTXV levels do not need to be repeated in screening requirements. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from
39、IHS-,-,-MIL-PRF-19500/704E 7 4.3.1 Gate stress test. Apply VGS= 24 V minimum for t = 250 s minimum. * 4.3.2 Single pulse avalanche energy (EAS). a. Peak current IAS= ID1. b. Inductance: .( )212EIV VVASDBR DDBRmH minimum. c. Gate to source resistor (RGS) 25 RGS 200 . * d. Supply voltage (VDD) .VDD= 2
40、5 V dc, except VDD= 50 V dc for 2N7487U3 and 2N7555U3. e. Peak gate voltage (VGS) 12 V. f. Initial case temperature TC= +25C +10C, -5C. g. Number of pulses to be applied 1 pulse minimum. 4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method 3161 of
41、MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VHwhere appropriate). Measurement delay time (tMD) = 70 s max. See table III, group E, subgroup 4 herein. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A
42、inspection. Group A inspection shall be conducted in accordance with table E-V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VIA (JANS) and table E-VIB (JANTXV) of MIL-P
43、RF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 1051 Test condition G, 100 cycles. B3 2077 Scanning electron microscope (SEM). B4 1042
44、Intermittent operation life, condition D, 2,000 cycles; ton= 30 seconds minimum. B5 1042 Accelerated steady-state gate bias, condition B, VGS= rated; TA= +175C, t = 24 hours minimum; or TA= +150C, t = 48 hours minimum. B5 1042 Accelerated steady-state reverse bias, condition A, VDS= rated; TA= +175C
45、, t = 120 hours minimum; or TA= +150C, t = 240 hours minimum. B5 2037 Bond strength, test condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/704E 8 4.4.2.2 Group B inspection, table E-VIB (JANTXV) of MIL-PRF-19500. Subgroup Me
46、thod Condition B2 1051 Test condition G, 25 cycles. B3 1042 Intermittent operation life, condition D, 2,000 cycles; ton= 30 seconds minimum. B5 and B6 Not applicable. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in t
47、able E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Subgroup Method Condition C2 2036 Terminal strength is not applicable. C5 3161 See 4.3.3. C6 1042 Intermittent operation life, condition D, 6,000 cycles; ton= 30 s
48、econds minimum. 4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with table E-VIII of MIL-PRF-19500 and table II herein. 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500, and table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD
