1、 MIL-PRF-19500/725C 14 November 2011 SUPERSEDING MIL-PRF-19500/725B 28 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6930UTK1, 1N6931UTK1, 1N6932UTK1, 1N6930UTK1CS, 1N6931UTK1CS, 1N6932UTK1CS, 1N6930UTK1AS, 1N6931UTK1AS, AND 1N6932UTK
2、1AS, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the
3、 performance requirements for silicon, Schottky power surface mount rectifier diodes in a low profile package. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1. 1.3 Maximum ratings. Unless otherwise specified TC=
4、 +25C. Column 1 Column 2 Column 3 Column 4 Column 5 Column 6 Column 7 Types VRWMIO TC= +100C IFSM tp= 8.3 ms, TC= +25C RJC (junction to cathode side) RJC (junction to anode side) TSTG and TJV dc A dc A (pk) C/W C/W C 1N6930UTK1, CS, AS 15 100 1,500 .35 .50 -65 to +150 1N6931UTK1, CS, AS 30 100 1,500
5、 .35 .50 1N6932UTK1, CS, AS 45 100 1,500 .35 .50 AMSC N/A FSC 5961 INCH-POUND Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductordla.mil . Since contact information can chang
6、e, you may want to verify the currency of this address information using the ASSIST Online database at https:/assist.daps.dla.mil. The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 February 2012. Provided by IHSNot for ResaleNo reproduc
7、tion or networking permitted without license from IHS-,-,-MIL-PRF-19500/725C 2 1.4 Primary electrical characteristics. Unless otherwise specified, TC= +25C. Column 1 Column 2 Column 3 Column 4 Column 5 Types VFMaximum forward voltage at TC= +25C V dc at IFVFMaximum forward voltage TC= +125C V dc at
8、IFIRMaximum reverse current (see column 2) mA at VRWMCJMaximum junction capacitance f = 1MHz VR= 5 VDC 50A 100A 100A TJ= +25C TJ= +125C pF 1N6930UTK1, CS, AS .43 .50 .43 3.5 900 7,000 1N6931UTK1, CS, AS .42 .51 .48 3.5 1,000 5,000 1N6932UTK1, CS, AS .49 .58 .55 3.5 1,000 5,000 2. APPLICABLE DOCUMENT
9、S 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure t
10、he completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifica
11、tions, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification fo
12、r. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or https:/assist.daps.dla.mil. or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philade
13、lphia, PA 19111-5094.) 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws an
14、d regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/725C 3 Ltr Dimensions Inches Millimeters Min Max Min Max BL .368 .388 9.35 9.86 BLT .100 2.54 BT .090 2.29 C .421 .461 10.69 11
15、.71 E .030 NOM .76 NOM F .289 .299 7.34 7.59 LC .040 NOM 1.02 NOM LF .055 .075 1.40 1.91 LT .005 .015 .127 .381 LW .135 .165 3.43 4.19 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology
16、. 4. For anode, cathode, and strap connections, see 3.4.1 and 3.4.3. FIGURE 1. Dimensions and configuration. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/725C 4 3. REQUIREMENTS 3.1 General. The individual item requirements shall be a
17、s specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (s
18、ee 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 herein. 3.4.1
19、 Diode construction. These devices shall be constructed utilizing double plug construction with eutectic bonding between both sides of the silicon die and terminal pins (see MIL-PRF-19500). Metallurgical bond shall be in accordance with the requirements of category II in MIL-PRF-19500. The diode bod
20、y is ceramic. All seals are eutectic solder. Strap material is a copper alloy or copper sandwich. The 1N6930UTK1, 1N6931UTK, and 1N6932UTK have no strap. The strap connects to the cathode anode on 1N6930UTKCS, 1N6931UTKCS, and 1N6932UTKCS and to the anode on 1N6930UTKAS, 1N6931UTKAS, and 1N6932UTKAS
21、. 3.4.2 Lead formation and finish. Unless otherwise specified, lead finish (pads, bottom pad and strap foot) shall be solderable as in accordance with MIL-PRF-19500 and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 L
22、ead formation and finish. Unless otherwise specified, lead finish (pads, bottom pad and strap foot) shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition document (see 6.2). 3.4.3
23、Polarity. Polarity shall be marked with the appropriate diode symbol on the strap or with a dot on the cathode side of the seal ring on “no strap” devices (see figure 1). 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
24、specified in 1.3, 1.4 and table I. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that w
25、ill affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and tables I, II, and III). 4.2
26、 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Construction verification. Cross sectional photos from three devices shall be submitted in the qualification report. Provided by IHSNot for ResaleNo reproduction or networking
27、 permitted without license from IHS-,-,-MIL-PRF-19500/725C 5 4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table I
28、I tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first inspection lot of this revision to maintain qualification. * 4.3 Screening. Screening shall be in accordance with table E-IV of MIL-PRF-19500, and as specified herein. The fo
29、llowing measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table E-IV of MIL-PRF-19500) Measurement JANS level JANTX and JANTXV levels (1) 3b Condition A, one pulse, IO= 0, VRWM= 0, IFSM= see 1.3, column
30、 4 herein. Condition A, one pulse, IO= 0, VRWM= 0, IFSM= see 1.3, column 4 herein. 3c Thermal impedance (see 4.3.1) Thermal impedance (see 4.3.1) 4 Not applicable Not applicable 5 Not applicable Not applicable 7b Optional Optional 8 Serialization required. Not applicable 9 Not applicable Not applica
31、ble 10 Not applicable Not applicable 11 VF1and IR1VF1and IR112 Method 1038 of MIL-STD-750, test condition A; TC= +125C, t = 240 hours, VRM= 80 percent of rated VRWM= see 1.3, column 2 herein V (pk), IO= 0, f = 60 Hz; alternate test: VRM= 80 percent of rated VRWM(see 1.3, column 2 herein for VRWM), T
32、C= +125C Method 1038 of MIL-STD-750, test condition A; TC= +125C, t = 48 hours, VRM= 80 percent of rated VRWM= see 1.3, column 2 herein V (pk), IO= 0, f = 60 Hz; alternate test: VRM= 80 percent of rated VRWM(see 1.3, column 2 herein for VRWM), TC= +125C 13 Subgroup 2, of table I herein, and subgroup
33、 3 of table I herein, VF1and IR1; VF1= 50 mV (pk); IR1= .7 mA dc or 100 percent from the initial value, whichever is greater. Scope display evaluation (see table I, subgroup 7) Subgroup 2, of table I herein excluding thermal impedance; VF1and IR1; VF1= 50 mV (pk); IR1= .7 mA dc or 100 percent from t
34、he initial value, whichever is greater. Scope display evaluation (see table I, subgroup 7) 14b Required Required 15 Not applicable Not applicable (1) Surge shall precede thermal impedance. These tests shall be performed anytime after screen 3 and before screen 10. 4.3.1 Thermal impedance. The therma
35、l impedance measurements shall be performed in accordance with method 3101 of MIL-STD-750. See table E-IX, group E, subgroup 4 of MIL-PRF-19500. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conduct
36、ed in accordance with table E-V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in tables E-VIA (JANS) and E-VIB (JANTX and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and 4.4.2.2 herein. E
37、lectrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein. * Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/725C 6 4.4.2.1 Group B inspec
38、tion, table E-VIA (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 TJ= +85C minimum, IF= 2 A minimum for 2,000 cycles. B5 1038 Condition B, IF= 1 A dc minimum, adjust TAand IFto achieve TJ= +150C, +0C, -35C, t = 240 hours min; (heat sinking allowed). 4.4.2.2 Group B inspection, table E-VIB
39、 (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition B3 1037 TJ= +85C minimum, IF= 2 A minimum for 2,000 cycles. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-VII of MIL-PRF-19500. Electrical mea
40、surements (end-points) shall be in accordance with table I, subgroup 2 herein. Delta measurements shall be in accordance with table III herein. Subgroup Method Condition C5 3101 IH= 20 A to 50 A, IM= 10 mA to 250 mA, tH= thermal equilibrium; tMD= 200 s maximum. C6 1037 TJ= +85C minimum, IF= 2 A mini
41、mum for 6,000 cycles. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table E-IX of MIL-PRF-19500 and table II herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. Delt
42、a measurements shall be in accordance with table III herein. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Avalanche ener
43、gy test. The Schottky rectifier shall be capable of absorbing the reverse energy of 350 rectangular pulses, tp=1 sec, IR= 2 A at 1 kHz. This will be performed during wafer or die level prior to device assembly. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from
44、 IHS-,-,-MIL-PRF-19500/725C 7 TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 2/ 3101 IM= 10 mA to 250 mA, IH= 200 A, tH= 2 ms, tmd= 200 s maximum ZJX1N6930UTK1, CS, AS
45、.18 C/W 1N6931UTK1, CS, AS .18 C/W 1N6932UTK1, CS, AS .18 C/W Forward voltage 4011 Pulsed test (see 4.5.1) tp= 300 s VF11N6930UTK1, CS, AS IF= 50 A (pk) .43 V 1N6931UTK1, CS, AS IF= 50 A (pk) .42 V 1N6932UTK1, CS, AS IF= 50 A (pk) .50 V Forward voltage 4011 Pulsed test (see 4.5.1) tp= 300 s VF21N693
46、0UTK1, CS, AS IF= 100 A (pk) .50 V 1N6931UTK1, CS, AS IF= 100 A (pk) .56 V 1N6932UTK1, CS, AS IF= 100 A (pk) .58 V Reverse current leakage 4016 DC method IR11N6930UTK1, CS, AS VR= 15 V 3.5 mA 1N6931UTK1, CS, AS VR= 30 V 3.5 mA 1N6932UTK1, CS, AS VR= 45 V 3.5 mA Breakdown voltage 4021 Pulsed test (se
47、e 4.5.1) tp= 35 ms VBR11N6930UTK1, CS, AS IR= 30 mA (pk) 16.5 V 1N6931UTK1, CS, AS IR= 30 mA (pk) 33 V 1N6932UTK1, CS, AS IR= 30 mA (pk) 50 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-MIL-PRF-19500/725C 8 TABLE I.
48、 Group A inspection Continued. Inspection 1/ MIL-STD-750 Symbol Limits Unit Method Conditions Min Max Subgroup 3 High temperature operation: TC= +125C Forward voltage 4011 Pulsed test (see 4.5.1) tp= 300 s VF31N6930UTK1, CS, AS IF= 100 A (pk) .43 V 1N6931UTK1, CS, AS IF= 100 A (pk) .48 V 1N6932UTK1,
49、 CS, AS IF= 100 A (pk) .55 V Reverse current leakage 4016 DC method IR21N6930UTK1, CS, AS VR= 15 V 900 mA 1N6931UTK1, CS, AS VR= 30 V 1,000 mA 1N6932UTK1, CS, AS VR= 45 V 1,000 mA Low temperature operation: TC= -55C Breakdown voltage 4021 Pulsed test (see 4.5.1) tp= 35 ms VBR21N6930UTK1, CS, AS IR= 30 mA (pk) 15 V 1N
